公开(公告)号：US5304319A

公开(公告)日：1994-04-19

申请号：US839700

申请日：1992-02-24

申请人： Yuji Yoshida ,  Koji Arita ,  Masami Funakura

发明人： Yuji Yoshida ,  Koji Arita ,  Masami Funakura

IPC分类号： C09K5/04

CPC分类号： C09K5/045 ,  C09K2205/22

摘要： A working fluid comprising tetrafluoroethane, difluoroethane and at least one fluorinated hydrocarbon having a boiling point of not higher than -40.degree. C. under atmospheric pressure selected from the group consisting of methane derivatives and ethane derivatives which consist of one or two carbon atoms, hydrogen atoms and fluorine atoms, which has very small influence on the ozone layer in the stratosphere and is suitable as a substitute working fluid for chlorodifluoromethane.

摘要翻译： 一种包含四氟乙烷，二氟乙烷和至少一种沸点不高于-40℃的氟化烃的工作流体，在大气压下选自甲烷衍生物和由一个或两个碳原子组成的乙烷衍生物，氢气 原子和氟原子，对平流层中的臭氧层影响很小，适合作为氯二氟甲烷的替代工作流体。

公开(公告)号：US5088302A

公开(公告)日：1992-02-18

申请号：US683728

申请日：1991-04-11

申请人： Takeshi Tomizawa ,  Koji Arita

发明人： Takeshi Tomizawa ,  Koji Arita

IPC分类号： F25D11/00 ,  F25B17/08

CPC分类号： F25B17/08

摘要： A portable cooler for cooling an article by utilizing the endothermic and exothermic phenomenon pertaining to a chemical reaction is disclosed, in which an adsorbent and a working medium are sealed in a reaction chamber defined between an inner wall and an outer wall, a working medium retaining member is disposed on the inner wall inside the reaction chamber for holding therein the working medium, the working medium retaining member being spaced from the adsorbent disposed on the outer wall, and a heater is held in contact with the adsorbent for regenerating the same, at least a part of said outer wall constituting a heat radiating portion.

摘要翻译： 公开了一种用于通过利用与化学反应有关的吸热和放热现象来冷却制品的便携式冷却器，其中吸附剂和工作介质被密封在限定在内壁和外壁之间的反应室中，工作介质保持 构件设置在反应室内部的内壁上，用于保持工作介质，工作介质保持构件与设置在外壁上的吸附剂间隔开，加热器与吸附剂保持接触以再生， 所述外壁的至少一部分构成散热部。

公开(公告)号：US4840042A

公开(公告)日：1989-06-20

申请号：US226084

申请日：1988-07-29

申请人： Mitsuhiro Ikoma ,  Kazuo Nakatani ,  Yuji Yoshida ,  Takeshi Tomizawa ,  Koji Arita

发明人： Mitsuhiro Ikoma ,  Kazuo Nakatani ,  Yuji Yoshida ,  Takeshi Tomizawa ,  Koji Arita

IPC分类号： F25B9/00 ,  F25B13/00

CPC分类号： F25B9/006 ,  F25B13/00 ,  F25B2341/0014

摘要： A heat pump system which comprises a main heat pump circuit filled with non-azeotropic mixed coolant and including a compressor, a utility-side heat exchanger, a throttling device, a source-side heat exchanger, etc.,; a fractionating separator having an upper end fluid-connected with an exit side of the utility-side heat exchanger; a reservoir disposed beneath the fractionating separator and having a bottom fluid-connected through a shut-off valve with a low pressure piping on an inlet side of either the source-side heat exchanger or the utility-side heat exchanger; and a coolant ejector disposed between the compressor and the utility-side heat exchanger, wherein a gaseous medium generated from the fractionating separator when the reservoir is heated is guided to a suction port of the coolant ejector to flow into the main heat pump circuit.

公开(公告)号：US08537605B2

公开(公告)日：2013-09-17

申请号：US12867437

申请日：2009-02-09

申请人： Takumi Mikawa ,  Yoshio Kawashima ,  Koji Arita ,  Takeki Ninomiya

发明人： Takumi Mikawa ,  Yoshio Kawashima ,  Koji Arita ,  Takeki Ninomiya

IPC分类号： G11C11/14

CPC分类号： H01L27/101 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1675

摘要： A nonvolatile semiconductor memory device (100) comprises a substrate (102) provided with a transistor (101); a first interlayer insulating layer (103) formed over the substrate to cover the transistor; a first contact plug (104) formed in the first interlayer insulating layer and electrically connected to either of a drain electrode (101a) or a source electrode (101b) of the transistor, and a second contact plug (105) formed in the first interlayer insulating layer and electrically connected to the other of the drain electrode or the source electrode of the transistor; a resistance variable layer (106) formed to cover a portion of the first contact plug; a first wire (107) formed on the resistance variable layer; and a second wire (108) formed to cover a portion of the second contact plug; an end surface of the resistance variable layer being coplanar with an end surface of the first wire.

摘要翻译： 非易失性半导体存储器件（100）包括设置有晶体管（101）的衬底（102）; 形成在所述衬底上以覆盖所述晶体管的第一层间绝缘层（103） 形成在所述第一层间绝缘层中并电连接到所述晶体管的漏电极（101a）或源电极（101b）中的任一个的第一接触插塞（104）和形成在所述第一中间层 绝缘层并与晶体管的漏电极或源电极中的另一个电连接; 形成为覆盖所述第一接触插塞的一部分的电阻变化层（106） 形成在电阻变化层上的第一线（107） 以及形成为覆盖所述第二接触插塞的一部分的第二线（108） 所述电阻变化层的端面与所述第一线的端面共面。

公开(公告)号：US20130171799A1

公开(公告)日：2013-07-04

申请号：US13823667

申请日：2011-09-16

申请人： Ryoko Miyanaga ,  Takumi Mikawa ,  Yukio Hayakawa ,  Takeki Ninomiya ,  Koji Arita

发明人： Ryoko Miyanaga ,  Takumi Mikawa ,  Yukio Hayakawa ,  Takeki Ninomiya ,  Koji Arita

IPC分类号： H01L45/00 ,  H01L21/768

CPC分类号： H01L45/16 ,  H01L21/768 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2418 ,  H01L45/00 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

摘要： A current steering element (100) formed such that the current steering element covers a lower opening (105) of a via hole (104) formed in an interlayer insulating layer (102), comprises: a corrosion-suppressing layer (106) formed on a lower side of a lower opening of the via hole such that the corrosion-suppressing layer covers an entire portion of the lower opening; a second electrode layer (108) formed under the corrosion-suppressing layer and comprising a material different from a material of the corrosion-suppressing layer; a current steering layer (110) formed under the second electrode layer such that the current steering layer is physically in contact with the second electrode layer; and a first electrode layer (112) formed under the current steering layer such that the first electrode layer is physically in contact with the current steering layer; and the first electrode layer, the current steering layer and the second electrode layer constitute one of a MSM diode and a MIM diode.

摘要翻译： 一种形成为当前的操舵元件覆盖形成在层间绝缘层（102）中的通孔（104）的下开口（105）的电流控制元件（100），包括：形成在 通孔的下开口的下侧，使得防蚀层覆盖下开口的整个部分; 形成在所述腐蚀抑制层下方并且包含不同于所述腐蚀抑制层的材料的材料的第二电极层（108） 形成在所述第二电极层下方的电流转向层（110），使得所述电流导向层物理地与所述第二电极层接触; 以及第一电极层（112），形成在所述电流导向层下方，使得所述第一电极层物理地与所述电流转向层接触; 并且第一电极层，电流导向层和第二电极层构成MSM二极管和MIM二极管之一。

公开(公告)号：US20110220862A1

公开(公告)日：2011-09-15

申请号：US13128575

申请日：2010-07-12

申请人： Koji Arita ,  Takumi Mikawa ,  Atsushi Himeno ,  Yoshio Kawashima ,  Kenji Tominaga

发明人： Koji Arita ,  Takumi Mikawa ,  Atsushi Himeno ,  Yoshio Kawashima ,  Kenji Tominaga

IPC分类号： H01L45/00 ,  H01L21/02

CPC分类号： H01L27/2409 ,  H01L27/2418 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1666 ,  H01L45/1675

摘要： A resistance variable element (100) used in a through-hole cross-point structure memory device, according to the present invention, and a resistance variable memory device including the resistance variable element, includes a substrate (7) and an interlayer insulating layer (3) formed on the substrate, and have a configuration in which a through-hole (4) is formed to penetrate the interlayer insulating layer, a first resistance variable layer (2) comprising transition metal oxide is formed outside the through-hole, a second resistance variable layer (5) comprising transition metal oxide is formed inside the through-hole, the first resistance variable layer is different in resistivity from the second resistance variable layer, and the first resistance variable layer and the second resistance variable layer are in contact with each other only in an opening (20) of the through-hole which is closer to the substrate.

摘要翻译： 在根据本发明的通孔交叉点结构存储装置中使用的电阻可变元件（100）和包括电阻可变元件的电阻变化存储装置包括基板（7）和层间绝缘层（ 3），并且具有形成贯通层间绝缘层的通孔（4）的构造，在通孔的外侧形成有包含过渡金属氧化物的第一电阻变化层（2）， 在通孔内形成有包含过渡金属氧化物的第二电阻变化层（5），第一电阻变化层的电阻率与第二电阻变化层不同，第一电阻变化层和第二电阻变化层接触 彼此仅在更靠近基板的通孔的开口（20）中。

公开(公告)号：US07800229B2

公开(公告)日：2010-09-21

申请号：US11704950

申请日：2007-02-12

申请人： Akira Furuya ,  Koji Arita ,  Tetsuya Kurokawa ,  Kaori Noda

发明人： Akira Furuya ,  Koji Arita ,  Tetsuya Kurokawa ,  Kaori Noda

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： C25D3/38 ,  C25D5/50 ,  C25D7/123 ,  C25D15/00 ,  H01L21/2885 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76883

摘要： An improved SIV resistance and an improved EM resistance are achieved in the coupling structure containing copper films. A semiconductor device includes: a semiconductor substrate; a second insulating layer formed on or over the semiconductor substrate; a second barrier metal film, formed on the second insulating film, and being capable of preventing copper from diffusing into the second insulating film; and an electrically conducting film formed on the second barrier metal film so as to be in contact with the second barrier metal film, and containing copper and carbon, wherein a distribution of carbon concentration along a depositing direction in the second electrically conducting film includes a first peak and a second peak.

摘要翻译： 在包含铜膜的耦合结构中实现了改进的SIV电阻和改进的EM电阻。 半导体器件包括：半导体衬底; 形成在所述半导体衬底上或之上的第二绝缘层; 第二阻挡金属膜，形成在所述第二绝缘膜上，并且能够防止铜扩散到所述第二绝缘膜中; 以及形成在所述第二阻挡金属膜上以与所述第二阻挡金属膜接触并且含有铜和碳的导电膜，其中所述第二导电膜中沿着沉积方向的碳浓度的分布包括第一 峰值和第二高峰。

公开(公告)号：US07563705B2

公开(公告)日：2009-07-21

申请号：US11359393

申请日：2006-02-23

申请人： Takashi Tonegawa ,  Koji Arita ,  Tatsuya Usami ,  Noboru Morita ,  Koichi Ohto ,  Yoichi Sasaki ,  Sadayuki Ohnishi ,  Ryohei Kitao

发明人： Takashi Tonegawa ,  Koji Arita ,  Tatsuya Usami ,  Noboru Morita ,  Koichi Ohto ,  Yoichi Sasaki ,  Sadayuki Ohnishi ,  Ryohei Kitao

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/32051 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76811 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A manufacturing method of a semiconductor device including a step of forming a via hole in an insulation layer including an organic low dielectric film, such as MSQ, SiC, and SiCN, and then embedding a wiring material in the via hole through a barrier metal. According to this method, a plasma treatment is performed after the via hole is formed and before the barrier metal is deposited, using a He/H2 gas capable of replacing groups (methyl groups) made of organic constituents and covering the surface of the exposed organic low dielectric film (MSQ) with hydrogen, or a He gas capable decomposing the groups (methyl groups) without removing organic low dielectric molecules. As a result, the surface of the low dielectric film (MSQ) is reformed to be hydrophilic and adhesion to the barrier metal is hence improved, thereby making it possible to prevent the occurrence of separation of the barrier metal and scratches.

摘要翻译： 一种半导体器件的制造方法，包括在包括诸如MSQ，SiC和SiCN的有机低电介质膜的绝缘层中形成通孔的步骤，然后通过阻挡金属将布线材料包埋在通孔中。 根据该方法，使用能够代替由有机成分构成的基团（甲基）并覆盖暴露的有机物的表面的He / H 2气体，在形成通孔并且在阻挡金属沉积之前进行等离子体处理 具有氢的低介电膜（MSQ）或能够分解基团（甲基）而不去除有机低介电分子的He气体。 结果，低电介质膜（MSQ）的表面被重新形成为亲水性，因此提高了与阻挡金属的粘合性，从而可以防止隔离金属的分离和划痕的发生。

公开(公告)号：US20080283404A1

公开(公告)日：2008-11-20

申请号：US12118979

申请日：2008-05-12

申请人： Akira FURUYA ,  Shinsuke Kozumi ,  Koji Arita

发明人： Akira FURUYA ,  Shinsuke Kozumi ,  Koji Arita

IPC分类号： C25D5/18

CPC分类号： C25D5/18 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76877

摘要： A method for manufacturing a semiconductor device is provided which includes performing an electroplating step to fill concavities formed on a substrate. The electroplating step further includes: performing a first electroplating step; performing a first reverse bias step; performing a second electroplating step; performing a second reverse bias step; and a third electroplating step. The polarity of the first and the second reverse bias steps is different from that of the first electroplating step. A difference between the third current density and the fourth current density is larger than a difference between the first current density and the second current density.

摘要翻译： 提供一种制造半导体器件的方法，其包括进行电镀步骤以填充形成在衬底上的凹面。 电镀步骤还包括：执行第一电镀步骤; 执行第一反向偏置步骤; 执行第二电镀步骤; 执行第二反向偏置步骤; 和第三电镀步骤。 第一和第二反向偏置步骤的极性与第一电镀步骤的极性不同。 第三电流密度和第四电流密度之间的差大于第一电流密度和第二电流密度之间的差。

公开(公告)号：US20080203572A1

公开(公告)日：2008-08-28

申请号：US12111352

申请日：2008-04-29

申请人： Tetsuya KUROKAWA ,  Koji Arita

发明人： Tetsuya KUROKAWA ,  Koji Arita

IPC分类号： H01L21/768 ,  H01L23/532

CPC分类号： H01L21/76877 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76879 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a semiconductor device having interconnects, reduced in leakage current between the interconnects and improved in the TDDB characteristic, which comprises an insulating interlayer 108, and interconnects 160 filled in grooves formed in the insulating interlayer, comprising a copper layer 124 mainly composed of copper, having the thickness smaller than the depth of the grooves, and a low-expansion metal layer 140, which is a metal layer having a heat expansion coefficient smaller than that of the copper layer, formed on the copper layer.

摘要翻译： 本发明提供一种具有互连的半导体器件，其互连之间的漏电流减小，TDDB特性得到改善，TDDB特性包括绝缘中间层108和填充在形成于绝缘中间层中的沟槽中的互连160，其包括主要组成的铜层124 的厚度小于沟槽深度的铜，以及形成在铜层上的具有小于铜层的热膨胀系数的金属层的低膨胀金属层140。