公开(公告)号：US08656325B2

公开(公告)日：2014-02-18

申请号：US13348850

申请日：2012-01-12

申请人： John E. Barwin ,  Amol A. Joshi ,  Baozhen Li ,  Michael R. Ouellette

发明人： John E. Barwin ,  Amol A. Joshi ,  Baozhen Li ,  Michael R. Ouellette

IPC分类号： G06F17/50

CPC分类号： G06F17/5068 ,  G06F2217/76 ,  G06F2217/78

摘要： Disclosed is an integrated circuit design method that determines maximum direct currents for metal components and uses them as design constraints in the design flow in order to avoid/minimize electromigration failures. Short and long metal components are treated differently for purposes of establishing the design constraints. For a short metal component, the maximum direct current as a function of a given temperature for a given expected lifetime of the integrated circuit is determined, another maximum direct current is determined based on the Blech length, and the higher of these two is selected and used as the design constraint for that short metal component. For a long metal component, only the maximum direct current as a function of the given temperature for the given expected lifetime is determined and used as the design constraint. Also disclosed herein are associated system and program storage device embodiments for designing an integrated circuit.

摘要翻译： 公开了集成电路设计方法，其确定金属部件的最大直流电流，并将其用作设计流程中的设计约束，以避免/最小化电迁移故障。 为了建立设计约束的目的，对短和长金属部件进行不同的处理。 对于短金属部件，确定针对集成电路的给定预期寿命的给定温度的函数的最大直流电，基于Blech长度确定另一最大直流电流，并且选择这两个中的较高者， 用作该短金属部件的设计约束。 对于长金属部件，仅确定作为给定预期寿命的给定温度的函数的最大直流电流作为设计约束。 本文还公开了用于设计集成电路的相关联的系统和程序存储设备实施例。

公开(公告)号：US07981771B2

公开(公告)日：2011-07-19

申请号：US12132806

申请日：2008-06-04

申请人： Baozhen Li

发明人： Baozhen Li

IPC分类号： H01L21/326

CPC分类号： H01L21/76834 ,  H01L21/76832 ,  H01L21/76849 ,  Y10S438/927

摘要： The invention generally relates to semiconductor devices, and more particularly to structures and methods for enhancing electromigration (EM) performance in interconnects. A method includes forming an interconnect, forming a cap on the interconnect, and forming a plurality of holes in the cap to improve electromigration performance of the interconnect.

摘要翻译： 本发明一般涉及半导体器件，更具体地涉及用于增强互连中的电迁移（EM）性能的结构和方法。 一种方法包括形成互连，在互连上形成帽，并且在帽中形成多个孔以改善互连的电迁移性能。

公开(公告)号：US07649262B2

公开(公告)日：2010-01-19

申请号：US12537328

申请日：2009-08-07

申请人： Jonathan D. Chapple-Sokol ,  Terence B. Hook ,  Baozhen Li ,  Thomas L. McDevitt ,  Christopher A. Ponsolle ,  Bette B. Reuter ,  Timothy D. Sullivan ,  Jeffrey S. Zimmerman

发明人： Jonathan D. Chapple-Sokol ,  Terence B. Hook ,  Baozhen Li ,  Thomas L. McDevitt ,  Christopher A. Ponsolle ,  Bette B. Reuter ,  Timothy D. Sullivan ,  Jeffrey S. Zimmerman

IPC分类号： H01L23/48

CPC分类号： H01L21/7684 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure for suppressing localized metal precipitate formation (LMPF) in semiconductor processing. For each metal wire that is exposed to the manufacturing environment and is electrically coupled to an N region, at least one P+ region is formed electrically coupled to the same metal wire. As a result, few excess electrons are available to combine with metal ions to form localized metal precipitate at the metal wire. A monitoring ramp terminal can be formed around and electrically disconnected from the metal wire. By applying a voltage difference to the metal wire and the monitoring ramp terminal and measuring the resulting current flowing through the metal wire and the monitoring ramp terminal, it can be determined whether localized metal precipitate is formed at the metal wire.

摘要翻译： 用于抑制半导体处理中的局部金属沉淀形成（LMPF）的结构。 对于暴露于制造环境并且电耦合到N区域的每个金属线，至少一个P +区形成为电耦合到相同的金属线。 结果，几乎没有多余的电子可用于与金属离子结合以在金属线上形成局部金属沉淀。 可以在金属线周围形成监测斜坡端子并与金属线电断开。 通过向金属线和监视斜坡端子施加电压差并测量流过金属线和监视斜坡端子的所得电流，可以确定在金属线处是否形成了局部金属沉淀物。

公开(公告)号：US20090294968A1

公开(公告)日：2009-12-03

申请号：US12537328

申请日：2009-08-07

申请人： Jonathan D. Chapple-Sokol ,  Terence B. Hook ,  Baozhen Li ,  Thomas L. McDevitt ,  Christopher A. Ponsolle ,  Bette B. Reuter ,  Timothy D. Sullivan ,  Jeffrey S. Zimmerman

发明人： Jonathan D. Chapple-Sokol ,  Terence B. Hook ,  Baozhen Li ,  Thomas L. McDevitt ,  Christopher A. Ponsolle ,  Bette B. Reuter ,  Timothy D. Sullivan ,  Jeffrey S. Zimmerman

IPC分类号： H01L23/532

CPC分类号： H01L21/7684 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure for suppressing localized metal precipitate formation (LMPF) in semiconductor processing. For each metal wire that is exposed to the manufacturing environment and is electrically coupled to an N region, at least one P+ region is formed electrically coupled to the same metal wire. As a result, few excess electrons are available to combine with metal ions to form localized metal precipitate at the metal wire. A monitoring ramp terminal can be formed around and electrically disconnected from the metal wire. By applying a voltage difference to the metal wire and the monitoring ramp terminal and measuring the resulting current flowing through the metal wire and the monitoring ramp terminal, it can be determined whether localized metal precipitate is formed at the metal wire.

摘要翻译： 用于抑制半导体处理中的局部金属沉淀形成（LMPF）的结构。 对于暴露于制造环境并且电耦合到N区域的每个金属线，至少一个P +区形成为电耦合到相同的金属线。 结果，几乎没有多余的电子可用于与金属离子结合以在金属线上形成局部金属沉淀。 可以在金属线周围形成监测斜坡端子并与金属线电断开。 通过向金属线和监视斜坡端子施加电压差并测量流过金属线和监视斜坡端子的所得电流，可以确定在金属线处是否形成了局部金属沉淀物。

公开(公告)号：US07384824B2

公开(公告)日：2008-06-10

申请号：US11362680

申请日：2006-02-27

申请人： Dinesh A. Badami ,  Tom C. Lee ,  Baozhen Li ,  Gerald Matusiewicz ,  William T. Motsiff ,  Christopher D. Muzzy ,  Kimball M. Watson ,  Jean E. Wynne

发明人： Dinesh A. Badami ,  Tom C. Lee ,  Baozhen Li ,  Gerald Matusiewicz ,  William T. Motsiff ,  Christopher D. Muzzy ,  Kimball M. Watson ,  Jean E. Wynne

IPC分类号： H01L21/82 ,  H01L29/00

CPC分类号： H01L23/5258 ,  H01L23/525 ,  H01L23/5254 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and structure for fabricating a laser fuse and a method for programming the laser fuse. The laser fuse includes a dielectric layer having two vias filled with a first self-passivated electrically conducting material. A fuse link is on top of the dielectric layer. The fuse link electrically connects the two vias and includes a second material having a characteristic of changing its electrical resistance after being exposed to a laser beam. Two mesas are over the fuse link and directly over the two vias. The two mesas each include a third self-passivated electrically conducting material. The laser fuse is programmed by directing a laser beam to the fuse link. The laser beam is controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off. Such electrical resistance change is sensed and converted to digital signal.

摘要翻译： 用于制造激光熔丝的方法和结构以及用于编程激光熔丝的方法。 激光熔丝包括具有填充有第一自钝化导电材料的两个通孔的电介质层。 熔丝连接在电介质层的顶部。 熔断体将两个通孔电连接并且包括具有在暴露于激光束之后改变其电阻的特性的第二材料。 两个台面位于熔丝链上方，直接穿过两个通孔。 两个台面各自包括第三自钝化导电材料。 激光熔丝通过将激光束引导到熔丝链来编程。 控制激光束，使得响应于激光束对熔丝链的影响，熔丝链的电阻改变，但熔丝链不会被吹掉。 这种电阻变化被检测并转换成数字信号。

公开(公告)号：US20070040277A1

公开(公告)日：2007-02-22

申请号：US11550853

申请日：2006-10-19

申请人： Jonathan Chapple-Sokol ,  Terence Hook ,  Baozhen Li ,  Thomas McDevitt ,  Christopher Ponsolle ,  Bette Reuter ,  Timothy Sullivan ,  Jeffrey Zimmerman

发明人： Jonathan Chapple-Sokol ,  Terence Hook ,  Baozhen Li ,  Thomas McDevitt ,  Christopher Ponsolle ,  Bette Reuter ,  Timothy Sullivan ,  Jeffrey Zimmerman

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L21/7684 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and structure for suppressing localized metal precipitate formation (LMPF) in semiconductor processing. For each metal wire that is exposed to the manufacturing environment and is electrically coupled to an N region, at least one P+ region is formed electrically coupled to the same metal wire. As a result, few excess electrons are available to combine with metal ions to form localized metal precipitate at the metal wire. A monitoring ramp terminal can be formed around and electrically disconnected from the metal wire. By applying a voltage difference to the metal wire and the monitoring ramp terminal and measuring the resulting current flowing through the metal wire and the monitoring ramp terminal, it can be determined whether localized metal precipitate is formed at the metal wire.

摘要翻译： 用于抑制半导体加工中的局部金属沉淀形成（LMPF）的方法和结构。 对于暴露于制造环境并且电耦合到N区域的每个金属线，至少一个P +区形成为电耦合到相同的金属线。 结果，几乎没有多余的电子可用于与金属离子结合以在金属线上形成局部金属沉淀。 可以在金属线周围形成监测斜坡端子并与金属线电断开。 通过向金属线和监视斜坡端子施加电压差并测量流过金属线和监视斜坡端子的所得电流，可以确定在金属线处是否形成了局部金属沉淀物。

公开(公告)号：US07037824B2

公开(公告)日：2006-05-02

申请号：US10844533

申请日：2004-05-13

申请人： Lloyd G. Burrell ,  Edward E. Cooney, III ,  Jeffrey P. Gambino ,  John E. Heidenreich, III ,  Hyun Koo Lee ,  Mark D. Levy ,  Baozhen Li ,  Stephen E. Luce ,  Thomas L. McDevitt ,  Anthony K. Stamper ,  Kwong Hon Wong ,  Sally J. Yankee

发明人： Lloyd G. Burrell ,  Edward E. Cooney, III ,  Jeffrey P. Gambino ,  John E. Heidenreich, III ,  Hyun Koo Lee ,  Mark D. Levy ,  Baozhen Li ,  Stephen E. Luce ,  Thomas L. McDevitt ,  Anthony K. Stamper ,  Kwong Hon Wong ,  Sally J. Yankee

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/76838 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

摘要： Tungsten studs of a size comparable to vias are provided to integrate and interface between copper and aluminum metallization layers in an integrated circuit and/or package therefor by lining a via opening, preferably with layers of tantalum nitride and PVD tungsten as a barrier against the corrosive effects of tungsten fluoride on copper. The reduced size of the tungsten studs relative to known interface structures allows wiring and connection pads to be formed in a single aluminum layer, improving performance and reducing process time and cost.

公开(公告)号：US20050194689A1

公开(公告)日：2005-09-08

申请号：US10708486

申请日：2004-03-06

申请人： Jonathan Chapple-Sokol ,  Terence Hook ,  Baozhen Li ,  Thomas McDevitt ,  Christopher Ponsolle ,  Bette Reuter ,  Timothy Sullivan ,  Jeffrey Zimmerman

发明人： Jonathan Chapple-Sokol ,  Terence Hook ,  Baozhen Li ,  Thomas McDevitt ,  Christopher Ponsolle ,  Bette Reuter ,  Timothy Sullivan ,  Jeffrey Zimmerman

IPC分类号： H01L23/48

CPC分类号： H01L21/7684 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and structure for suppressing localized metal precipitate formation (LMPF) in semiconductor processing. For each metal wire that is exposed to the manufacturing environment and is electrically coupled to an N region, at least one P+ region is formed electrically coupled to the same metal wire. As a result, few excess electrons are available to combine with metal ions to form localized metal precipitate at the metal wire. A monitoring ramp terminal can be formed around and electrically disconnected from the metal wire. By applying a voltage difference to the metal wire and the monitoring ramp terminal and measuring the resulting current flowing through the metal wire and the monitoring ramp terminal, it can be determined whether localized metal precipitate is formed at the metal wire.

摘要翻译： 用于抑制半导体加工中的局部金属沉淀形成（LMPF）的方法和结构。 对于暴露于制造环境并且电耦合到N区域的每个金属线，至少一个P +区形成为电耦合到相同的金属线。 结果，几乎没有多余的电子可用于与金属离子结合以在金属线上形成局部金属沉淀。 可以在金属线周围形成监测斜坡端子并与金属线电断开。 通过向金属线和监视斜坡端子施加电压差并测量流过金属线和监视斜坡端子的所得电流，可以确定在金属线处是否形成了局部金属沉淀物。

公开(公告)号：US06794706B2

公开(公告)日：2004-09-21

申请号：US10064493

申请日：2002-07-22

申请人： Fen Chen ,  Rajarao Jammy ,  Baozhen Li ,  Sebastian T. Ventrone

发明人： Fen Chen ,  Rajarao Jammy ,  Baozhen Li ,  Sebastian T. Ventrone

IPC分类号： H01L2976

CPC分类号： H01L21/28185 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02326 ,  H01L21/28194 ,  H01L21/3144 ,  H01L28/40 ,  H01L29/513 ,  H01L29/518 ,  H01L29/94

摘要： A capacitor structure having a re-oxide layer on a nitride layer, wherein an interface between the nitride layer and the re-oxide layer includes electron traps. Characteristics of the carrier traps control a voltage output of the device. The thickness of the nitride layer and the re-oxide layer also control the voltage output. The nitride layer and a re-oxide layer form a dielectric capacitor. The dielectric capacitor undergoes a trap filled limit voltage, wherein a consistent voltage is output for a plurality of currents.

摘要翻译： 一种在氮化物层上具有再氧化物层的电容器结构，其中氮化物层和再氧化物层之间的界面包括电子阱。 载波阱的特性控制器件的电压输出。 氮化物层和再氧化物层的厚度也控制电压输出。 氮化物层和再氧化物层形成介质电容器。 介质电容器经历陷阱填充极限电压，其中为多个电流输出一致的电压。

公开(公告)号：US5916700A

公开(公告)日：1999-06-29

申请号：US12778

申请日：1998-01-23

申请人： Roswell J. Ruka ,  Lewis Kuo ,  Baozhen Li

发明人： Roswell J. Ruka ,  Lewis Kuo ,  Baozhen Li

IPC分类号： H01M4/86 ,  H01M4/90 ,  H01M8/12 ,  H01M8/10

CPC分类号： H01M4/9033 ,  H01M4/9016 ,  H01M2004/8689 ,  H01M2008/1293 ,  H01M2300/0074

摘要： An air electrode material for a solid oxide fuel cell is disclosed. The electrode material is based on lanthanum manganite having a perovskite-like crystal structure ABO.sub.3. The A-site of the air electrode material preferably comprises La, Ca, Ce and at least one lanthanide selected from Sm, Gd, Dy, Er, Y and Nd. The B-site of the electrode material comprises Mn with substantially no dopants. The ratio of A:B is preferably slightly above 1. A preferred air electrode composition is of the formula La.sub.w Ca.sub.x Ln.sub.y Ce.sub.z MnO.sub.3, wherein Ln comprises at least one lanthanide selected from Sm, Gd, Dy, Er, Y and Nd, w is from about 0.55 to about 0.56, x is from about 0.255 to about 0.265, y is from about 0.175 to about 0.185, and z is from about 0.005 to about 0.02. The air electrode material possesses advantageous chemical and electrical properties as well as favorable thermal expansion and thermal cycle shrinkage characteristics.

摘要翻译： 公开了一种用于固体氧化物燃料电池的空气电极材料。 电极材料基于具有钙钛矿型晶体结构ABO 3的亚锰酸镧。 空气电极材料的A位优选包含La，Ca，Ce和至少一种选自Sm，Gd，Dy，Er，Y和Nd的镧系元素。 电极材料的B位置包括基本上没有掺杂剂的Mn。 A：B的比例优选略高于1.优选的空气电极组合物具有式LawCaxLnyCezMnO 3，其中Ln包含至少一种选自Sm，Gd，Dy，Er，Y和Nd的镧系元素，w为约0.55至 约0.56，x为约0.255至约0.265，y为约0.175至约0.185，z为约0.005至约0.02。 空气电极材料具有有利的化学和电学性能以及有利的热膨胀和热循环收缩特性。