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    Solid state laser for operation in librational modes
    62.
    发明授权
    Solid state laser for operation in librational modes 失效
    固态激光器用于演示模式

    公开(公告)号：US6134257A

    公开(公告)日：2000-10-17

    申请号：US63577

    申请日：1998-04-21

    申请人： Federico Capasso ,  Alfred Yi Cho ,  Jerome Faist ,  Claire F. Gmachl ,  Deborah Lee Sivco ,  Evgueni E. Narimanov ,  Alfred Douglas Stone ,  Jens Uwe Noeckel

    发明人： Federico Capasso ,  Alfred Yi Cho ,  Jerome Faist ,  Claire F. Gmachl ,  Deborah Lee Sivco ,  Evgueni E. Narimanov ,  Alfred Douglas Stone ,  Jens Uwe Noeckel

    IPC分类号： H01S5/00 ,  H01S3/08 ,  H01S3/083 ,  H01S5/065 ,  H01S5/10 ,  H01S5/323 ,  H01S5/343 ,  H01S3/18 ,  H01S3/19

    CPC分类号： H01S3/083

    摘要： A solid state laser comprises a cavity resonator in the form of a generally cylindrical body and, located within the resonator, an active region which generates lasing light when suitably pumped. The resonator has a relatively high effective refractive index (n>2 and typically n>3) is sufficiently deformed from circularity so as to support at least one librational mode (e.g., a V-shaped or a bow-tie mode, the latter being presently preferred for generating relatively high power, directional outputs). Specifically described is a Group III-V compound semiconductor, quantum cascade (QC), micro-cylinder laser in which the resonator has a flattened quadrupolar deformation from circularity. This laser exhibits both a highly directional output emission and a three-order of magnitude increase in optical output power compared to conventional semiconductor micro-cylinder QC lasers having circularly symmetric resonators.

    摘要翻译： 固体激光器包括呈大致圆柱形体形式的空腔谐振器，并且位于谐振器内部的有源区域，其在适当泵浦时产生激光。 谐振器具有相对较高的有效折射率（n> 2且通常n> 3）从圆形度充分变形，以便支持至少一种示范模式（例如，V形或蝴蝶结模式，后者为 目前优选用于产生相对高功率的方向输出）。 具体描述的是其中谐振器具有从圆形度的扁平四极变形的III-V族化合物半导体，量子级联（QC），微圆柱激光器。 与具有圆形对称谐振器的常规半导体微型气缸QC激光器相比，该激光器表现出高度方向性的输出发射和光输出功率三位数的增加。

    Quantum cascade light emitter with pre-biased internal electronic potential
    64.
    发明授权
    Quantum cascade light emitter with pre-biased internal electronic potential 有权
    量子级联发光器具有预偏置内部电子电位

    公开(公告)号：US6055254A

    公开(公告)日：2000-04-25

    申请号：US159127

    申请日：1998-09-23

    申请人： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    发明人： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

    IPC分类号： H01L29/06 ,  H01L29/15 ,  H01S5/34 ,  H01S5/343 ,  H01S3/18 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/3402

    摘要： Instead of trying to keep the SLs of a QC laser field free, we "pre-bias" the actual electronic potential by varying the SL period (and hence average composition) so as to achieve an essentially flat profile, on average, of upper and lower minibands, despite the presence of an applied field in the SLs. In one embodiment, in at least a first subset of the QW layers, the thicknesses of the QW layers are varied from QW layer to QW layer so as to increase in the direction of the applied field. In this embodiment, the upper and lower lasing levels are located, in the absence of an applied electric field, each at different energies from layer to layer within the first subset, so that despite the presence of an applied field, the desired flatband condition of the upper and lower minibands is realized. In a preferred embodiment, the thicknesses of the QW layers within the first subset are varied from QW layer to QW layer so as to increase in the direction of the applied field, and the thicknesses of a second subset of the barrier layers are also varied from barrier layer to barrier layer so as to decrease or increase in the direction of the applied field.

    摘要翻译： 不要试图保持QC激光场的SL不受限制，我们通过改变SL周期（因此平均组成）来“预先偏置”实际的电子电位，以便平均地获得上部和 尽管在SL中存在应用场，但是较低的迷你频段。 在一个实施例中，在QW层的至少第一子集中，QW层的厚度从QW层到QW层变化，以便在施加场的方向上增加。 在该实施例中，在没有所施加的电场的情况下，上和下激光电平各自处于第一子集内的层与层之间的不同能量，使得尽管存在施加的场，但是期望的平带条件 实现上下两个迷你吧。 在优选实施例中，第一子集内的QW层的厚度从QW层到QW层变化，以便在施加的场的方向上增加，并且阻挡层的第二子集的厚度也从 阻挡层到阻挡层，以便在施加的场的方向上减小或增加。

    Unipolar semiconductor laser
    67.
    发明授权
    Unipolar semiconductor laser 失效
    单极半导体激光器

    公开(公告)号：US5509025A

    公开(公告)日：1996-04-16

    申请号：US371000

    申请日：1995-01-09

    申请人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Albert L. Hutchinson ,  Carlo Sirtori ,  Deborah L. Sivco

    发明人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Albert L. Hutchinson ,  Carlo Sirtori ,  Deborah L. Sivco

    IPC分类号： H01S5/00 ,  H01S3/106 ,  H01S5/062 ,  H01S5/12 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/3402 ,  H01S3/1068 ,  H01S5/0614 ,  H01S5/06243 ,  H01S5/1228 ,  H01S5/1234 ,  H01S5/3419

    摘要： This application discloses, to the best of our knowledge, the first unipolar laser. An exemplary embodiment of the laser was implemented in the GaInAs/AlInAs system and emits radiation of about 4.2 .mu.m wavelength. Embodiments in other material systems are possible, and the lasers can be readily designed to emit at a predetermined wavelength in a wide spectral region. We have designated the laser the "quantum cascade" (QC) laser. The QC laser comprises a multilayer semiconductor structure that comprises a multiplicity of essentially identical undoped "active" regions, a given active region being separated from an adjoining one by a doped "energy relaxation" region. In a currently preferred embodiment each active region comprises three coupled quantum wells designed to facilitate attainment of population inversion. In the currently preferred embodiment the energy relaxation regions are digitally graded gap regions. However, other energy relaxation regions are possible. Disclosed are also embodiments that rely primarily on "vertical" transitions in a given quantum well. Such lasers preferably comprise superlattice Bragg reflectors. The unipolar plasma in a unipolar laser can be manipulated by means of an electric "control" field, facilitating, for instance, beam steering or external control of the modal gain of the laser. Means for accomplishing this are discussed.

    摘要翻译： 根据我们所知，本应用公开了第一单极激光器。 激光器的示例性实施例在GaInAs / AlInAs系统中实现并且发射约4.2μm波长的辐射。 其他材料系统中的实施例是可能的，并且激光器可以容易地设计成在宽光谱区域中以预定波长发射。 我们已经将激光器命名为“量子级联”（QC）激光器。 QC激光器包括多层半导体结构，其包括多个基本上相同的未掺杂的“有源”区域，给定的有源区域通过掺杂的“能量弛豫”区域与邻接的区域分离。 在当前优选实施例中，每个有源区域包括三个耦合的量子阱，被设计成有助于达到群体反转。 在当前优选的实施例中，能量松弛区域是数字渐变间隙区域。 然而，其他能量松弛区也是可能的。 公开的还是主要依赖于给定量子阱中的“垂直”跃迁的实施例。 这种激光器优选地包括超晶格布拉格反射器。 单极激光器中的单极性等离子体可以通过电气“控制”场进行操纵，从而有助于例如光束转向或激光的模态增益的外部控制。 讨论了实现这一点的手段。