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    Unipolar semiconductor laser
    1.
    发明授权
    Unipolar semiconductor laser 失效
    单极半导体激光器

    公开(公告)号：US5457709A

    公开(公告)日：1995-10-10

    申请号：US223341

    申请日：1994-04-04

    申请人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Albert L. Hutchinson ,  Serge Luryi ,  Carlo Sirtori ,  Deborah L. Sivco

    发明人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Albert L. Hutchinson ,  Serge Luryi ,  Carlo Sirtori ,  Deborah L. Sivco

    IPC分类号： H01S3/106 ,  H01S5/062 ,  H01S5/12 ,  H01S5/34 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/3402 ,  H01S3/1068 ,  H01S5/0614 ,  H01S5/06243 ,  H01S5/1228 ,  H01S5/3419

    摘要： This application discloses, to the best of our knowledge, the first unipolar laser. An exemplary embodiment of the laser was implemented in the GaInAs/AlInAs system and emits radiation of about 4.2 .mu.m wavelength. Embodiments in other material systems are possible, and the lasers can be readily designed to emit at a predetermined wavelength in a wide spectral region. We have designated the laser the "quantum cascade" (QC) laser. The QC laser comprises a multilayer semiconductor structure that comprises a multiplicity of essentially identical undoper "active" regions, a given active region being separated from an adjoining one by a doped "energy relaxation" region. In a currently preferred embodiment each active region comprises three coupled quantum wells designed to facilitate attainment of population inversion. In the currently preferred embodiment the energy relaxation regions are digitally graded gap regions. However, other energy relaxation regions are possible. The unipolar plasma in a unipolar laser can be manipulated by means of an electric "control" field, facilitating, for instance, beam steering or external control of the modal gain of the laser. Means for accomplishing this are discussed.

    摘要翻译： 根据我们所知，本应用公开了第一单极激光器。 激光器的示例性实施例在GaInAs / AlInAs系统中实现并且发射约4.2μm波长的辐射。 其他材料系统中的实施例是可能的，并且激光器可以容易地设计成在宽光谱区域中以预定波长发射。 我们已经将激光器命名为“量子级联”（QC）激光器。 QC激光器包括多层半导体结构，其包括多个基本上相同的未掺杂的“活性”区域，给定的有源区域通过掺杂的“能量弛豫”区域与邻接的区域分离。 在当前优选实施例中，每个有源区域包括三个耦合的量子阱，被设计成有助于达到群体反转。 在当前优选的实施例中，能量松弛区域是数字渐变间隙区域。 然而，其他能量松弛区也是可能的。 单极激光器中的单极性等离子体可以通过电气“控制”场进行操纵，从而有助于例如光束转向或激光的模态增益的外部控制。 讨论了实现这一点的手段。

    Quantum well device for producing localized electron states for detectors and modulators
    6.
    发明授权
    Quantum well device for producing localized electron states for detectors and modulators 失效
    用于产生检测器和调制器的局部电子状态的量子阱器件

    公开(公告)号：US5311009A

    公开(公告)日：1994-05-10

    申请号：US923197

    申请日：1992-07-31

    申请人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Carlo Sirtori ,  Deborah L. Sivco

    发明人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Carlo Sirtori ,  Deborah L. Sivco

    IPC分类号： H01L29/12 ,  H01L31/0352 ,  H01L27/12

    CPC分类号： B82Y10/00 ,  H01L29/122 ,  H01L31/0352 ,  Y10S977/759 ,  Y10S977/761

    摘要： In accordance with the invention, a quantum well device provides localized states for electrons having an energy E greater than the barrier height of the constituent quantum wells. The device comprises a confinement quantum well of width L.sub.w equal to an integer number n of deBroglie half wavelengths ##EQU1## and a plurality of adjacent quarter wavelength barriers and wells, each having a thickness equal to an odd number m of deBroglie quarter wavelengths. Constructive interference between the waves partially reflected by the interfaces between adjacent .lambda./4 barriers and .lambda./4 wells leads to the formation of a localized electron state at an energy E in the region of the confinement well. The device can be used in detectors and modulators employing transitions between a bound state within the well and the localized state above the well.

    摘要翻译： 根据本发明，量子阱器件为具有大于构成量子阱的势垒高度的能量E的电子提供局部状态。 该装置包括宽度为Lw的限制量子阱，其等于整数n个deBroglie半波长ve长度屏障和阱，每个具有等于deBroglie四分之一波长的奇数m的厚度。 由相邻λ/ 4屏障和λ/ 4阱之间的界面部分反射的波之间的建构性干扰导致在约束阱区域内以能量E形成局部电子态。 该装置可以用于探测器和调制器中，采用阱内的结合状态和井之上的局部化状态之间的转换。

    Resonant-tunneling device, and mode of device operation
    7.
    发明授权
    Resonant-tunneling device, and mode of device operation 失效
    谐振隧道装置和设备运行模式

    公开(公告)号：US4853753A

    公开(公告)日：1989-08-01

    申请号：US117583

    申请日：1987-11-05

    申请人： Federico Capasso ,  Alfred Y. Cho ,  Susanta Sen

    发明人： Federico Capasso ,  Alfred Y. Cho ,  Susanta Sen

    IPC分类号： G11C11/38 ,  G11C11/56 ,  H01L27/10 ,  H01L29/76 ,  H01L29/80 ,  H01L29/88 ,  H03B19/16

    CPC分类号： B82Y10/00 ,  G11C11/38 ,  G11C11/56 ,  H01L29/7606 ,  H01L29/882 ,  H03B19/16 ,  G11C2211/5614 ,  Y10S257/926

    摘要： A semiconductor integrated resonant-tunneling device having multiple negative-resistance regions, and having essentially equal current peaks in such regions, is useful as a highly compact element, e.g., in apparatus designed for ternary logic operations, frequency multiplication, waveform scrambling, memory operation, parity-bit generation, and coaxial-line driving. The device can be made by layer deposition on a substrate and includes a resonant-tunneling structure between contacts such that side-by-side first and third contacts are on one side, and a second contact is on the opposite side of the resonant-tunneling structure. Disclosed further are (two-terminal) resonant-tunneling diodes as incorporated in memory devices, e.g., in lieu of 2-transistsor flip-flops; room-temperature device operation; and devices comprising an essentially undoped accelerator region between an emitter contact and a resonant-tunneling structure.

    摘要翻译： 具有多个负电阻区域并且在这些区域中具有基本相等的电流峰值的半导体集成谐振隧道装置可用作高度紧凑的元件，例如在设计用于三元逻辑运算，倍频，波形加扰，存储器操作 奇偶校验位产生和同轴线驱动。 该器件可以通过在衬底上的层沉积制成，并且包括在触点之间的谐振隧穿结构，使得并排的第一和第三触点在一侧，并且第二触点位于谐振隧道的相反侧 结构体。 还公开了（二端）谐振隧道二极管，如并入存储器件中，例如代替2-转移触发器; 室温装置操作; 以及包括在发射极接触和谐振隧道结构之间的基本上未掺杂的加速器区域的器件。

    Unipolar semiconductor laser
    9.
    发明授权
    Unipolar semiconductor laser 失效
    单极半导体激光器

    公开(公告)号：US5509025A

    公开(公告)日：1996-04-16

    申请号：US371000

    申请日：1995-01-09

    申请人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Albert L. Hutchinson ,  Carlo Sirtori ,  Deborah L. Sivco

    发明人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Albert L. Hutchinson ,  Carlo Sirtori ,  Deborah L. Sivco

    IPC分类号： H01S5/00 ,  H01S3/106 ,  H01S5/062 ,  H01S5/12 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/3402 ,  H01S3/1068 ,  H01S5/0614 ,  H01S5/06243 ,  H01S5/1228 ,  H01S5/1234 ,  H01S5/3419

    摘要： This application discloses, to the best of our knowledge, the first unipolar laser. An exemplary embodiment of the laser was implemented in the GaInAs/AlInAs system and emits radiation of about 4.2 .mu.m wavelength. Embodiments in other material systems are possible, and the lasers can be readily designed to emit at a predetermined wavelength in a wide spectral region. We have designated the laser the "quantum cascade" (QC) laser. The QC laser comprises a multilayer semiconductor structure that comprises a multiplicity of essentially identical undoped "active" regions, a given active region being separated from an adjoining one by a doped "energy relaxation" region. In a currently preferred embodiment each active region comprises three coupled quantum wells designed to facilitate attainment of population inversion. In the currently preferred embodiment the energy relaxation regions are digitally graded gap regions. However, other energy relaxation regions are possible. Disclosed are also embodiments that rely primarily on "vertical" transitions in a given quantum well. Such lasers preferably comprise superlattice Bragg reflectors. The unipolar plasma in a unipolar laser can be manipulated by means of an electric "control" field, facilitating, for instance, beam steering or external control of the modal gain of the laser. Means for accomplishing this are discussed.

    摘要翻译： 根据我们所知，本应用公开了第一单极激光器。 激光器的示例性实施例在GaInAs / AlInAs系统中实现并且发射约4.2μm波长的辐射。 其他材料系统中的实施例是可能的，并且激光器可以容易地设计成在宽光谱区域中以预定波长发射。 我们已经将激光器命名为“量子级联”（QC）激光器。 QC激光器包括多层半导体结构，其包括多个基本上相同的未掺杂的“有源”区域，给定的有源区域通过掺杂的“能量弛豫”区域与邻接的区域分离。 在当前优选实施例中，每个有源区域包括三个耦合的量子阱，被设计成有助于达到群体反转。 在当前优选的实施例中，能量松弛区域是数字渐变间隙区域。 然而，其他能量松弛区也是可能的。 公开的还是主要依赖于给定量子阱中的“垂直”跃迁的实施例。 这种激光器优选地包括超晶格布拉格反射器。 单极激光器中的单极性等离子体可以通过电气“控制”场进行操纵，从而有助于例如光束转向或激光的模态增益的外部控制。 讨论了实现这一点的手段。