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    Error detection and correction method and apparatus in a magnetoresistive random access memory
    62.
    发明授权
    Error detection and correction method and apparatus in a magnetoresistive random access memory 有权
    磁阻随机存取存储器中的误差检测和校正方法及装置

    公开(公告)号：US06704230B1

    公开(公告)日：2004-03-09

    申请号：US10250201

    申请日：2003-06-12

    申请人： John K. DeBrosse ,  Heinz Hoenigschmid ,  Rainer Leuschner ,  Gerhard Mueller

    发明人： John K. DeBrosse ,  Heinz Hoenigschmid ,  Rainer Leuschner ,  Gerhard Mueller

    IPC分类号： G11C2900

    CPC分类号： G11C7/24 ,  G06F11/106 ,  G11C11/406

    摘要： The present invention relates to a method and apparatus for reducing data errors in a magneto-resistive random access memory (MRAM). According to the disclosed method, data bits and associated error correction code (ECC) check bits are stored into a storage area. Thereafter, the data bits and ECC check bits are read out and any errors are detected and corrected. A data refresh is then initiated based on a count and data bits and associated ECC check bits stored in the storage area are then refreshed by accessing the stored data bits and the associated ECC check bits, and ultimately by checking, correcting and restoring the data bits and the ECC check bits to the storage area.

    摘要翻译： 本发明涉及一种用于减少磁阻随机存取存储器（MRAM）中的数据错误的方法和装置。 根据所公开的方法，将数据位和相关联的纠错码（ECC）校验位存储到存储区域中。 此后，读出数据位和ECC校验位，并检测和校正任何错误。 然后基于计数开始数据刷新，然后通过访问存储的数据位和相关联的ECC校验位来刷新存储在存储区域中的相关ECC校验位，并且最终通过检查，校正和恢复数据位 并将ECC校验位存储到存储区域。

    Chemically amplified resist
    63.
    发明授权
    Chemically amplified resist 失效
    化学放大抗蚀剂

    公开(公告)号：US06251558B1

    公开(公告)日：2001-06-26

    申请号：US09065010

    申请日：1998-04-23

    申请人： Klaus Elian ,  Rainer Leuschner ,  Ewald Guenther

    发明人： Klaus Elian ,  Rainer Leuschner ,  Ewald Guenther

    IPC分类号： G06F7004

    CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/111 ,  Y10S430/116 ,  Y10S430/127

    摘要： A chemically amplified resist contains the following components: a polymer with carboxylic acid anhydride groups and tert-butylester, tert-butoxycarbonyloxy, tetrahydrofuranyl, or tetrahydropyranyl groups; a photoreactive compound which, when exposed or electron-irradiated, releases a sulfonic acid having a pKa value>0.5 (acid former); a compound that can enter into a reversible chemical reaction with the sulfonic acid (buffer compound); and a solvent.

    摘要翻译： 化学增幅抗蚀剂包含以下组分：具有羧酸酐基团的聚合物和叔丁基酯，叔丁氧羰基氧基，四氢呋喃基或四氢吡喃基;光反应性化合物，当暴露或电子辐照时，释放具有pKa 值> 0.5（酸成分）;可与磺酸（缓冲剂化合物）进行可逆化学反应的化合物; 和溶剂。

    Chemically amplified resist
    64.
    发明授权
    Chemically amplified resist 有权
    化学放大抗蚀剂

    公开(公告)号：US06171755B2

    公开(公告)日：2001-01-09

    申请号：US09201728

    申请日：1998-11-30

    申请人： Klaus Elian ,  Ewald G{umlaut over (u)}nther ,  Rainer Leuschner

    发明人： Klaus Elian ,  Ewald G{umlaut over (u)}nther ,  Rainer Leuschner

    IPC分类号： G03F7004

    CPC分类号： G03F7/0045 ,  G03F7/0758 ,  G03F7/405 ,  Y10S430/127

    摘要： A chemically amplified resist for electron beam lithography contains the following components: a polymer with dissolution-inhibiting groups that can be cleaved with acid catalysis, a photo-reactive compound, which upon electron irradiation releases a sulfonic acid with a pKa value ≦2.5 (photo acid generator), an electron-beam-sensitive sensitizer enhancing the exposure sensitivity of the resist, such as a fluorene derivative, and a solvent.

    摘要翻译： 用于电子束光刻的化学放大抗蚀剂包含以下组分：具有可用酸催化裂解的溶解抑制基团的聚合物，光电反应性化合物，其在电子照射下释放pKa值<= 2.5的磺酸（ 光产酸剂），增强抗蚀剂如芴衍生物和溶剂的曝光灵敏度的电子束敏感敏化剂。

    Photolithographic pattern generation
    67.
    发明授权
    Photolithographic pattern generation 失效
    光刻图案生成

    公开(公告)号：US5863705A

    公开(公告)日：1999-01-26

    申请号：US793546

    申请日：1997-02-21

    申请人： Recai Sezi ,  Rainer Leuschner ,  Erwin Schmidt

    发明人： Recai Sezi ,  Rainer Leuschner ,  Erwin Schmidt

    IPC分类号： G03F7/004 ,  G03F7/022 ,  G03F7/023 ,  G03F7/033 ,  G03F7/039 ,  G03F7/26 ,  G03F7/38 ,  H01L21/027 ,  G03C5/00

    CPC分类号： G03F7/022 ,  G03F7/0233 ,  Y10S430/12

    摘要： The invention concerns a photolithographic method of producing sub-micron structural features by applying to a substrate a photosensitive resist layer consisting of a polymer containing tert-butyl ester or tert-butoxycarbonyloxy groups, a photosensitive component (in the form of an ester of naphthoquinonediazide-4-sulfonic acid and an aromatic hydroxy compound) and a suitable solvent. The photoresist is then dried, exposed in an imaging manner, subjected to a temperature treatment in the range between 120.degree. and 150.degree. C. for a period of 100 to 600 seconds, and wet-developed (single-layer resist system). The invention also concerns a method in which a corresponding two-layer resist system is used.

    摘要翻译： PCT No.PCT / DE95 / 01187 Sec。 371日期1997年2月21日 102（e）日期1997年2月21日PCT 1995年9月1日PCT PCT。 公开号WO96 / 08751 日期1996年3月21日本发明涉及通过将由含有叔丁基酯或叔丁氧羰基氧基的聚合物组成的光敏抗蚀剂层，光敏组分（以 萘醌二叠氮-4-磺酸和芳族羟基化合物的酯）和合适的溶剂。 然后将光致抗蚀剂干燥，以成像方式曝光，在120〜150℃的温度下进行100〜600秒的湿度处理和湿式显影（单层抗蚀剂体系）。 本发明还涉及使用相应的双层抗蚀剂体系的方法。

    Connection and build-up technique for multichip modules
    68.
    发明授权
    Connection and build-up technique for multichip modules 失效
    多芯片模块的连接和建立技术

    公开(公告)号：US5556812A

    公开(公告)日：1996-09-17

    申请号：US495246

    申请日：1995-06-27

    申请人： Rainer Leuschner ,  Hellmut Ahne ,  Siegfried Birkle ,  Albert Hammerschmidt ,  Recai Sezi ,  Tobias Noll ,  Ann Dumoulin

    发明人： Rainer Leuschner ,  Hellmut Ahne ,  Siegfried Birkle ,  Albert Hammerschmidt ,  Recai Sezi ,  Tobias Noll ,  Ann Dumoulin

    IPC分类号： G03F7/075 ,  C23C14/20 ,  G03F7/26 ,  H01L21/48 ,  H05K3/00 ,  H05K3/02 ,  H05K3/04 ,  H05K3/10 ,  H05K3/18 ,  H05K3/38 ,  H05K3/46 ,  H01L21/60

    CPC分类号： H01L21/4846 ,  H01L21/4857 ,  H05K3/465 ,  H01L2924/0002 ,  H05K2203/072 ,  H05K3/0023 ,  H05K3/0041 ,  H05K3/048 ,  H05K3/184 ,  H05K3/388 ,  H05K3/4661

    摘要： A method for manufacturing multichip modules having layer sequences made of dielectric material with conducting tracks embedded therein is characterized by the following features: (1) a temperature-resistant, base-resistant polymer having a dielectric constant .ltoreq.3 is used as a dielectric material, which is applied to a non-conductive substrate and serves as an edge boundary for currentless, autocatalytic build-up of the conducting tracks; (2) the dielectric material is provided with a layer made of material which is soluble in organic solvents (lift-off layer); (3) the dielectric material and the lift-off layer are structured in a single lithographic step, either a direct or an indirect structuring taking place and grooves having an aspect ratio .gtoreq.1 being formed in the dielectric material; (4) a metallic seed layer is applied to the dielectric material or rather to the lift-off layer through vapor deposition in a directed manner; (5) the lift-off layer is removed using an organic solvent; and (6) conducting tracks are created in the grooves through currentless metal deposition.

    摘要翻译： 制造具有由介电材料制成的具有导电轨迹的层序列的多芯片模块的方法的特征在于具有以下特征：（1）具有介电常数<3的耐温耐碱聚合物用作电介质 材料，其被施加到非导电衬底并且用作导电轨道的无电流，自动催化积聚的边界; （2）介电材料设有可溶于有机溶剂（剥离层）的材料制成的层; （3）电介质材料和剥离层在单个光刻步骤中构成，直接或间接构造发生，并且在电介质材料中形成具有纵横比大于等于1的沟槽; （4）通过气相沉积以有向的方式将金属种子层施加到电介质材料上或者相对于剥离层; （5）使用有机溶剂除去剥离层; 并且通过无电流金属沉积在凹槽中产生（6）导电轨迹。