摘要:
An apparatus and method for supporting a substrate is provided. In one embodiment, an apparatus for supporting a substrate includes a body having a band extending therefrom. The band is adapted to retain a fluid on the body thereby forming a shallow processing bath for processing the substrate. The band is adapted to deflect under centrifugal force to release the fluid from the substrate as the body is rotated above a predetermined rate.
摘要:
An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.
摘要:
Embodiments of the invention may generally provide a small volume electrochemical plating cell. The plating cell generally includes a fluid basin configured to contain a plating solution therein, the fluid basin having a substantially horizontal weir. The cell further includes an anode positioned in a lower portion of the fluid basin, the anode having a plurality of parallel channels formed therethrough, and a base member configured to receive the anode, the base member having a plurality of groves formed into an anode receiving surface, each of the plurality of grooves terminating into an annular drain channel. A membrane support assembly configured to position a membrane immediately above the anode in a substantially planar orientation with respect to the anode surface is provided, the membrane support assembly having a plurality of channels and bores formed therein.
摘要:
An electroless deposition system is provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate transfer shuttle positioned to transfer substrates between the first and second processing stations. The system also includes a substrate transfer robot positioned on the mainframe and configured to access an interior of the processing enclosure. The system also includes a substrate a fluid delivery system that is configured to deliver a processing fluid by use of a spraying process to a substrate mounted in the processing enclosure.
摘要:
A method and apparatus for removing waste material from a plating solution is disclosed. The invention generally provides a plating cell having an electrolyte inlet and an electrolyte drain, an electrolyte storage unit in fluid communication with the electrolyte inlet, and a diffusion dialysis chamber in fluid communication with the electrolyte drain and the electrolyte storage unit. The diffusion dialysis chamber is generally configured to receive at least a portion of used electrolyte solution and remove waste material therefrom in order to provide a refreshed electrolyte solution to the electrolyte storage unit. A method generally includes supplying an electrolyte solution to a copper plating cell, plating copper onto a substrate in the plating cell with the electrolyte solution, removing used electrolyte solution from the plating cell, and refreshing a portion of the used electrolyte solution with a diffusion dialysis device.
摘要:
In one embodiment, the present invention generally provides an apparatus and method for dispersing a chemical reagent into a plating solution. The apparatus generally includes a tank for containing the plating solution and a horizontal vessel in fluid communication with the tank, wherein the horizontal vessel has an input and an output. The apparatus further includes at least one shelf contained inside the horizontal vessel, wherein the at least one shelf extends between the input and the output and the chemical reagent rests on the at least one shelf. In another embodiment, the present invention generally provides an apparatus for dispersing a chemical reagent to a plating solution comprising a tank for containing the plating solution and a vertical vessel in fluid communication with the tank. A lower portion of the vertical vessel includes an inlet and an injector port and an upper portion of the vertical vessel includes an outlet and a manifold. The chemical reagent is positioned between the inlet and the outlet.
摘要:
An air amplifier device has a body with two pieces which fit together and have an inner wall defining a generally cylindrical cavity with a center axis and with an entrance opening at its upper end and an exit opening at its other end. The two pieces have respective shoulders which abut to index the pieces in precise relationship radially, axially, and longitudinally. A pair of circular lips in the inner wall near the entrance opening form a venturi jet air opening through the inner wall to direct a controlled flow of air from a supply of air down into the cylindrical cavity. The lips are uniformly parallel with each other and concentric with the center axis, are closely and uniformly spaced apart for 360 degrees around their lengths and are two circular edges of the respective pieces, and are indexed to the respective shoulders of the pieces such that when the pieces are assembled the jet air opening is uniform within a fraction of a thousandth of an inch.
摘要:
Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.
摘要:
Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.
摘要:
Methods of patterning low-k dielectric films are described. For example, a method includes forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. Exposed portions of the low-k dielectric layer are modified with a plasma process. The modified portions of the low-k dielectric layer are removed selective to the mask layer and unmodified portions of the low-k dielectric layer.