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165 条记录 (耗时 0.039 秒)

    Non-volatile memory device including dummy electrodes and method of fabricating the same
    63.
    发明授权
    Non-volatile memory device including dummy electrodes and method of fabricating the same 有权
    包括虚拟电极的非易失性存储器件及其制造方法

    公开(公告)号：US08748969B2

    公开(公告)日：2014-06-10

    申请号：US12654470

    申请日：2009-12-22

    申请人： Xianyu Wenxu ,  Jung-hyun Lee ,  Dong-joon Ma ,  Yeon-hee Kim ,  Yong-young Park ,  Chang-soo Lee

    发明人： Xianyu Wenxu ,  Jung-hyun Lee ,  Dong-joon Ma ,  Yeon-hee Kim ,  Yong-young Park ,  Chang-soo Lee

    IPC分类号： H01L29/792

    CPC分类号： H01L27/11556 ,  H01L27/11551 ,  H01L27/11578

    摘要： Provided are a non-volatile memory device and a method of fabricating the same. The non-volatile memory device may include a substrate and a plurality of semiconductor pillars on the substrate. A plurality of control gate electrodes may be stacked on the substrate and intersecting the plurality of semiconductor pillars. A plurality of dummy electrodes may be stacked adjacent to the plurality of control gate electrodes on the substrate, the plurality of dummy electrodes being spaced apart from the plurality of control gate electrodes. A plurality of via plugs may be connected to the plurality of control gate electrodes. A plurality of wordlines may be on the plurality of via plugs. Each of the plurality of via plugs may penetrate a corresponding one of the plurality of control gate electrodes and at least one of the plurality of dummy electrodes.

    摘要翻译： 提供了一种非易失性存储器件及其制造方法。 非易失性存储器件可以包括衬底和衬底上的多个半导体柱。 多个控制栅电极可以堆叠在基板上并与多个半导体柱相交。 多个虚设电极可以与基板上的多个控制栅电极相邻，多个虚设电极与多个控制栅电极间隔开。 多个通孔塞可以连接到多个控制栅电极。 多个字线可以在多个通孔插头上。 多个通孔塞中的每一个可以穿透多个控制栅电极中的相应一个和多个虚拟电极中的至少一个。

    Data recording medium for data storage and method of recording or erasing data using the same
    64.
    发明授权
    Data recording medium for data storage and method of recording or erasing data using the same 有权
    用于数据存储的数据记录介质以及使用其记录或擦除数据的方法

    公开(公告)号：US08507112B2

    公开(公告)日：2013-08-13

    申请号：US11984594

    申请日：2007-11-20

    申请人： Jung-hyun Lee ,  Sang-jun Choi ,  Hyung-jin Bae ,  Young-ju Kim

    发明人： Jung-hyun Lee ,  Sang-jun Choi ,  Hyung-jin Bae ,  Young-ju Kim

    IPC分类号： G11B5/02 ,  B32B7/02 ,  B32B15/04

    CPC分类号： B82Y10/00 ,  G11B9/04 ,  G11B9/149 ,  Y10T428/12438 ,  Y10T428/12535

    摘要： Provided is a data recording medium having improved data recording/storage characteristics and with an improved structure to have a higher data storage capacity, and a method of recording and/or easing data using the same. The data recording medium may include a Cu electrode layer on a substrate, and a data recording layer formed of a compound including a metal and at least one non-metal selected from the group consisting of S, Se, and Te, on the Cu electrode layer. Data is recordable to or erasable from the data recording layer by changing the resistance of the data recording layer by diffusing Cu ions from the Cu electrode layer to the data recording layer or by erasing Cu ions from the data recording layer by diffusing Cu ions from the data recording layer back to the Cu electrode layer, according to a voltage pulse applied to the data recording layer.

    摘要翻译： 提供了具有改进的数据记录/存储特性并且具有改进的结构以具有更高数据存储容量的数据记录介质，以及使用其记录和/或简化数据的方法。 数据记录介质可以包括在基板上的Cu电极层，以及在Cu电极上由包含金属和选自S，Se和Te中的至少一种非金属的化合物形成的数据记录层 层。 通过将Cu离子从Cu电极层扩散到数据记录层，或者通过从Cu-Cu层中扩散Cu离子从数据记录层中去除Cu离子来改变数据记录层的电阻，数据可从数据记录层记录或擦除 数据记录层根据施加到数据记录层的电压脉冲返回到Cu电极层。

    Semiconductor device including poly-Si and method of manufacturing the same
    66.
    发明授权
    Semiconductor device including poly-Si and method of manufacturing the same 有权
    包括多晶硅的半导体器件及其制造方法

    公开(公告)号：US07999266B2

    公开(公告)日：2011-08-16

    申请号：US12000242

    申请日：2007-12-11

    申请人： Wenxu Xianyu ,  Jung-hyun Lee ,  Hyung-jin Bae ,  Young-soo Park

    发明人： Wenxu Xianyu ,  Jung-hyun Lee ,  Hyung-jin Bae ,  Young-soo Park

    IPC分类号： H01L29/43 ,  H01L21/283

    CPC分类号： H01L21/28537 ,  H01L27/1021 ,  H01L29/861

    摘要： A semiconductor device including polysilicon (poly-Si) and method of manufacturing the same are provided. The semiconductor device includes a TaNx material layer and a poly-Si layer formed on the TaNx material layer. The semiconductor device including poly-Si may be manufactured by forming a TaNx material layer and forming a poly-Si layer by depositing silicon formed on the TaNx material layer and annealing silicon.

    摘要翻译： 提供了包括多晶硅（poly-Si）的半导体器件及其制造方法。 半导体器件包括形成在TaNx材料层上的TaNx材料层和多晶硅层。 可以通过形成TaNx材料层并通过沉积形成在TaNx材料层上的硅并退火硅来形成多晶硅层来制造包括多晶硅的半导体器件。

    Multi-bit memory device having resistive material layers as storage node and methods of manufacturing and operating the same
    67.
    发明授权
    Multi-bit memory device having resistive material layers as storage node and methods of manufacturing and operating the same 有权
    具有作为存储节点的电阻材料层的多位存储器件及其制造和操作方法

    公开(公告)号：US07939816B2

    公开(公告)日：2011-05-10

    申请号：US12662102

    申请日：2010-03-31

    申请人： Jung-hyun Lee

    发明人： Jung-hyun Lee

    IPC分类号： H01L45/00 ,  G11C11/56

    CPC分类号： H01L45/144 ,  G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1675

    摘要： Provided are a multi-bit memory device having resistive material layers as a storage node, and methods of manufacturing and operating the same. The memory device includes a substrate, a transistor formed on the substrate, and a storage node coupled to the transistor, wherein the storage node includes: a lower electrode connected to the substrate; a first phase change layer formed on the lower electrode; a first barrier layer overlying the first phase change layer; a second phase change layer overlying the first barrier layer; and an upper electrode formed on the second phase change layer.

    摘要翻译： 提供了具有作为存储节点的电阻材料层的多位存储器件及其制造和操作方法。 存储器件包括衬底，形成在衬底上的晶体管和耦合到晶体管的存储节点，其中存储节点包括：连接到衬底的下电极; 形成在下电极上的第一相变层; 覆盖所述第一相变层的第一阻挡层; 覆盖第一阻挡层的第二相变层; 和形成在第二相变层上的上电极。

    Non-volatile memory device and method of fabricating the same
    68.
    发明申请
    Non-volatile memory device and method of fabricating the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US20100155826A1

    公开(公告)日：2010-06-24

    申请号：US12654470

    申请日：2009-12-22

    申请人： Xianyu Wenxu ,  Jung-hyun Lee ,  Dong-joon Ma ,  Yeon-hee Kim ,  Yong-young Park ,  Chang-soo Lee

    发明人： Xianyu Wenxu ,  Jung-hyun Lee ,  Dong-joon Ma ,  Yeon-hee Kim ,  Yong-young Park ,  Chang-soo Lee

    IPC分类号： H01L27/115 ,  H01L21/8246 ,  H01L21/20

    CPC分类号： H01L27/11556 ,  H01L27/11551 ,  H01L27/11578

    摘要： Provided are a non-volatile memory device and a method of fabricating the same. The non-volatile memory device may include a substrate and a plurality of semiconductor pillars on the substrate. A plurality of control gate electrodes may be stacked on the substrate and intersecting the plurality of semiconductor pillars. A plurality of dummy electrodes may be stacked adjacent to the plurality of control gate electrodes on the substrate, the plurality of dummy electrodes being spaced apart from the plurality of control gate electrodes. A plurality of via plugs may be connected to the plurality of control gate electrodes. A plurality of wordlines may be on the plurality of via plugs. Each of the plurality of via plugs may penetrate a corresponding one of the plurality of control gate electrodes and at least one of the plurality of dummy electrodes.

    摘要翻译： 提供了一种非易失性存储器件及其制造方法。 非易失性存储器件可以包括衬底和衬底上的多个半导体柱。 多个控制栅电极可以堆叠在基板上并与多个半导体柱相交。 多个虚设电极可以与基板上的多个控制栅电极相邻，多个虚设电极与多个控制栅电极间隔开。 多个通孔塞可以连接到多个控制栅电极。 多个字线可以在多个通孔插头上。 多个通孔插塞中的每一个可以穿透多个控制栅电极中的相应一个和多个虚拟电极中的至少一个。

    Method of growing silicon and method of manufacturing solar cell using the same
    69.
    发明申请
    Method of growing silicon and method of manufacturing solar cell using the same 有权
    生长硅的方法及使用其制造太阳能电池的方法

    公开(公告)号：US20100151617A1

    公开(公告)日：2010-06-17

    申请号：US12461502

    申请日：2009-08-13

    申请人： Jung-hyun Lee ,  Chang-soo Lee ,  Dong-joon Ma

    发明人： Jung-hyun Lee ,  Chang-soo Lee ,  Dong-joon Ma

    IPC分类号： H01L31/18 ,  C01B33/02

    CPC分类号： C01B33/027 ,  C01B33/029 ,  C01B33/03 ,  C01B33/035 ,  H01L31/182 ,  Y02E10/546 ,  Y02P20/544 ,  Y02P70/521

    摘要： In a method of growing silicon (Si) using a reactor, a supercritical fluid including a silicon Si source and hydrogen flows in the reactor, and the Si source reacts with hydrogen. A base substrate of a solar cell may be formed with Si made using the method of growing silicon (Si). The supercritical fluid may be a fluid in which Si is not oxidized and may be, for example, a CO2 supercritical fluid with a pressure of about 60 to about 200 atm. The Si source may be TriChloroSilane (TCS) (SiCl3H) or SiH4.

    摘要翻译： 在使用反应器生长硅（Si）的方法中，包括硅Si源和氢的超临界流体在反应器中流动，并且Si源与氢反应。 太阳能电池的基底可以由使用生长硅（Si）的方法制成的Si形成。 超临界流体可以是其中Si不被氧化的流体，并且可以是例如具有约60至约200atm压力的CO 2超临界流体。 Si源可以是三氯硅烷（TCS）（SiCl 3 H）或SiH 4。