摘要:
A device manufacturing method includes a transfer of a pattern from a patterning device onto a substrate. The device manufacturing method further includes transferring a pattern of a main mark to a base layer for forming an alignment mark; depositing a pattern receiving layer on the base layer; in a first lithographic process, aligning, by using the main mark, a first mask that includes a first pattern and a local mark pattern, and transferring the first pattern and the local mark pattern to the pattern receiving layer; aligning, by using the local mark pattern, a second mask including a second pattern relative to the pattern receiving layer; andin a second lithographic process, transferring the second pattern to the pattern receiving layer; the first and second patterns being configured to form an assembled pattern.
摘要:
A method according to one embodiment of the invention relates to determining at least one parameter of a model that provides information about a position of an object. The object may include a plurality of alignment marks of which desired positions are known. The method includes measuring a plurality of positional parameters for each alignment mark. Based on the measured plurality of positional parameters, which are weighted with weighing coefficients, at least one parameter of the model of the object is determined. The numerical value of each weighing coefficient is determined together with the at least one parameter of the model.
摘要:
One or more focus settings for use in a device manufacturing method is determined by printing a plurality of target markers at different focus settings and using a scatterometer, e.g. off-line, to measure a property of the target markers that is indicative of focus.
摘要:
An overlay target on a substrate is disclosed, the overlay target including a periodic array of structures wherein every nth structure is different from the rest of the structures. The periodic array is desirably made of two interlaced gratings, one of the gratings having a different pitch from the other grating in order to create an asymmetry in the array. This asymmetry can then be measured by measuring the diffraction spectra of radiation reflected from the overlay target. Variation in the asymmetry indicates the presence of an overlay error in layers on the substrate, where overlay targets are printed on subsequent layers.
摘要:
A lithographic projection apparatus is provided with an optical system built into the wafer table for producing an image of a wafer mark that is provided on the back side of the wafer. The image is located at the plane of the front side of the wafer and can be viewed by an alignment system from the front side of the wafer. Simultaneous alignment between marks on the back and front of the wafer and a mask can be performed using a pre-existing alignment system
摘要:
A method of determining an overlay error. Measuring an overlay target having process-induced asymmetry. Constructing a model of the target. Modifying the model, e.g., by moving one of the structures to compensate for the asymmetry. Calculating an asymmetry-induced overlay error using the modified model. Determining an overlay error in a production target by subtracting the asymmetry-induced overlay error from a measured overlay error. In one example, the model is modified by varying asymmetry p(n′), p(n″) and the calculating an asymmetry-induced overlay error is repeated for a plurality of scatterometer measurement recipes and the step of determining an overlay error in a production target uses the calculated asymmetry-induced overlay errors to select an optimum scatterometer measurement recipe used to measure the production target.
摘要:
An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.
摘要:
A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets and small targets which are for measuring overlay. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.
摘要:
Disclosed are methods, apparatuses, and lithographic systems for calibrating an inspection apparatus. Radiation is projected onto a pattern in a target position of a substrate. By making a plurality of measurements of the pattern and comparing the measured first or higher diffraction orders of radiation reflected from the pattern of different measurements, a residual error indicative of the error in a scatterometer may be calculated. This error is an error in measurements of substrate parameters caused by irregularities of the scatterometer. The residual error may manifest itself as an asymmetry in the diffraction spectra.
摘要:
An apparatus measures properties, such as overlay error, of a substrate divided into a plurality of fields. The apparatus includes a radiation source configured to direct radiation onto a first target of each field of the substrate. Each first target (T4G) has at least a first grating and a second grating having respective predetermined offsets, the predetermined offset (+d) of the first grating being in a direction opposite the predetermined offset (−d) of the second grating. A detector is configured to detect the radiation reflected from each first target and to obtain an asymmetry value for each first target from the detected radiation. Further, a module is configured to determine an overlay value for each first target based on at least the obtained asymmetry value and the predetermined offsets and determine a polynomial fit across a plurality of first targets of a corresponding plurality of fields of the substrate for a relationship between the obtained asymmetry value and determined overlay value of each first target.