Lithographic apparatus and device manufacturing method with double exposure overlay control
    61.
    发明授权
    Lithographic apparatus and device manufacturing method with double exposure overlay control 有权
    平版印刷设备和双重曝光覆盖控制的设备制造方法

    公开(公告)号:US07687209B2

    公开(公告)日:2010-03-30

    申请号:US11384835

    申请日:2006-03-21

    IPC分类号: G03F9/00 G03C5/00

    摘要: A device manufacturing method includes a transfer of a pattern from a patterning device onto a substrate. The device manufacturing method further includes transferring a pattern of a main mark to a base layer for forming an alignment mark; depositing a pattern receiving layer on the base layer; in a first lithographic process, aligning, by using the main mark, a first mask that includes a first pattern and a local mark pattern, and transferring the first pattern and the local mark pattern to the pattern receiving layer; aligning, by using the local mark pattern, a second mask including a second pattern relative to the pattern receiving layer; andin a second lithographic process, transferring the second pattern to the pattern receiving layer; the first and second patterns being configured to form an assembled pattern.

    摘要翻译: 一种器件制造方法包括将图案从图案形成装置转移到衬底上。 所述器件制造方法还包括将主标记的图案转印到用于形成对准标记的基底层; 在基层上沉积图案接收层; 在第一光刻工艺中,通过使用主标记对准包括第一图案和局部标记图案的第一掩模,并将第一图案和局部标记图案转印到图案接收层; 通过使用本地标记图案,相对于图案接收层对准包括第二图案的第二掩模; 并在第二光刻工艺中将第二图案转印到图案接收层; 第一和第二图案被配置成形成组装图案。

    Lithographic apparatus, method of determining a model parameter, device manufacturing method, and device manufactured thereby
    62.
    发明授权
    Lithographic apparatus, method of determining a model parameter, device manufacturing method, and device manufactured thereby 失效
    光刻设备,确定模型参数的方法,器件制造方法以及由此制造的器件

    公开(公告)号:US07558643B2

    公开(公告)日:2009-07-07

    申请号:US11007578

    申请日:2004-12-09

    IPC分类号: G06F19/00

    CPC分类号: G03F9/7092

    摘要: A method according to one embodiment of the invention relates to determining at least one parameter of a model that provides information about a position of an object. The object may include a plurality of alignment marks of which desired positions are known. The method includes measuring a plurality of positional parameters for each alignment mark. Based on the measured plurality of positional parameters, which are weighted with weighing coefficients, at least one parameter of the model of the object is determined. The numerical value of each weighing coefficient is determined together with the at least one parameter of the model.

    摘要翻译: 根据本发明的一个实施例的方法涉及确定提供关于对象的位置的信息的模型的至少一个参数。 物体可以包括多个对准标记,其中期望的位置是已知的。 该方法包括测量每个对准标记的多个位置参数。 基于所测量的多个位置参数,其被称重系数加权,确定对象的模型的至少一个参数。 每个称重系数的数值与模型的至少一个参数一起确定。

    Lithographic apparatus
    65.
    发明授权
    Lithographic apparatus 有权
    平版印刷设备

    公开(公告)号:US06768539B2

    公开(公告)日:2004-07-27

    申请号:US10043271

    申请日:2002-01-14

    IPC分类号: G03B2742

    摘要: A lithographic projection apparatus is provided with an optical system built into the wafer table for producing an image of a wafer mark that is provided on the back side of the wafer. The image is located at the plane of the front side of the wafer and can be viewed by an alignment system from the front side of the wafer. Simultaneous alignment between marks on the back and front of the wafer and a mask can be performed using a pre-existing alignment system

    摘要翻译: 光刻投影装置设置有内置在晶片台中的光学系统,用于产生设置在晶片背面的晶片标记的图像。 图像位于晶片正面的平面上,并且可以通过对准系统从晶片的正面观察。 可以使用预先存在的对准系统来执行晶片背面和前面的标记与掩模之间的同时对准

    Calibration Method, Inspection Method and Apparatus, Lithographic Apparatus, and Lithographic Processing Cell
    69.
    发明申请
    Calibration Method, Inspection Method and Apparatus, Lithographic Apparatus, and Lithographic Processing Cell 有权
    校准方法,检验方法和装置,平版印刷设备和平版印刷加工单元

    公开(公告)号:US20110292365A1

    公开(公告)日:2011-12-01

    申请号:US13132011

    申请日:2009-12-01

    IPC分类号: G03B27/54 G01N21/00

    摘要: Disclosed are methods, apparatuses, and lithographic systems for calibrating an inspection apparatus. Radiation is projected onto a pattern in a target position of a substrate. By making a plurality of measurements of the pattern and comparing the measured first or higher diffraction orders of radiation reflected from the pattern of different measurements, a residual error indicative of the error in a scatterometer may be calculated. This error is an error in measurements of substrate parameters caused by irregularities of the scatterometer. The residual error may manifest itself as an asymmetry in the diffraction spectra.

    摘要翻译: 公开了用于校准检查装置的方法,装置和光刻系统。 辐射被投影到基板的目标位置的图案上。 通过对图案进行多次测量并比较从不同测量图案反射的辐射的测量的第一或更高的衍射级数,可以计算指示散射仪中的误差的残差。 该误差是由散射仪的不规则引起的衬底参数的测量误差。 残余误差可能表现为衍射光谱中的不对称性。

    Apparatus and Method for Inspecting a Substrate
    70.
    发明申请
    Apparatus and Method for Inspecting a Substrate 有权
    用于检查基板的装置和方法

    公开(公告)号:US20110255066A1

    公开(公告)日:2011-10-20

    申请号:US12996211

    申请日:2009-06-04

    IPC分类号: G03B27/74 G03B27/32 G01B11/14

    CPC分类号: G03F7/70633

    摘要: An apparatus measures properties, such as overlay error, of a substrate divided into a plurality of fields. The apparatus includes a radiation source configured to direct radiation onto a first target of each field of the substrate. Each first target (T4G) has at least a first grating and a second grating having respective predetermined offsets, the predetermined offset (+d) of the first grating being in a direction opposite the predetermined offset (−d) of the second grating. A detector is configured to detect the radiation reflected from each first target and to obtain an asymmetry value for each first target from the detected radiation. Further, a module is configured to determine an overlay value for each first target based on at least the obtained asymmetry value and the predetermined offsets and determine a polynomial fit across a plurality of first targets of a corresponding plurality of fields of the substrate for a relationship between the obtained asymmetry value and determined overlay value of each first target.

    摘要翻译: 一种装置测量分成多个场的衬底的性质,例如覆盖误差。 该装置包括被配置为将辐射引导到衬底的每个场的第一靶上的辐射源。 每个第一目标(T4G)具有至少第一光栅和具有相应预定偏移的第二光栅,第一光栅的预定偏移(+ d)在与第二光栅的预定偏移(-d)相反的方向上。 检测器被配置为检测从每个第一目标反射的辐射,并且从检测到的辐射获得每个第一目标的不对称值。 此外,模块被配置为基于至少所获得的不对称值和预定偏移来确定每个第一目标的覆盖值,并且确定跨越衬底的相应多个场的多个第一目标的多项式拟合,以获得关系 在获得的不对称值和确定的每个第一目标的覆盖值之间。