公开(公告)号：US08288747B2

公开(公告)日：2012-10-16

申请号：US12842158

申请日：2010-07-23

申请人： Fen Chen ,  Richard Steven Kontra ,  Tom C. Lee ,  Theodore M. Levin ,  Christopher David Muzzy ,  Timothy Dooling Sullivan

发明人： Fen Chen ,  Richard Steven Kontra ,  Tom C. Lee ,  Theodore M. Levin ,  Christopher David Muzzy ,  Timothy Dooling Sullivan

IPC分类号： H01L29/00 ,  H01L47/00

CPC分类号： G11C13/0009 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/04 ,  G11C13/047 ,  G11C2013/0054 ,  H01L45/1213 ,  H01L45/145

摘要： A structure. The structure includes a substrate, a resistive/reflective region on the substrate, and a light source/light detecting and/or a sens-amp circuit configured to ascertain a reflectance and/or resistance change in the resistive/reflective region. The resistive/reflective region includes a material having a characteristic of the material's reflectance and/or resistance being changed due to a phase change in the material. The resistive/reflective region is configured to respond, to an electric current through the resistive/reflective region and/or a laser beam projected on the resistive/reflective region, by the phase change in the material which causes a reflectance and/resistance change in the resistive/reflective region from a first reflectance and/or resistance value to a second reflectance and/or resistance value different from the first reflectance and/or resistance value.

摘要翻译： 一个结构。 该结构包括衬底，衬底上的电阻/反射区域以及被配置为确定电阻/反射区域中的反射率和/或电阻变化的光源/光检测和/或感测放大器电路。 电阻/反射区域包括具有材料的反射率和/或电阻的特性的材料由于材料的相变而改变。 电阻/反射区域被配置为通过材料的相变来响应通过电阻/反射区域的电流和/或投射在电阻/反射区域上的激光束，这导致反射和/ 电阻/反射区域从第一反射率和/或电阻值到不同于第一反射率和/或电阻值的第二反射率和/或电阻值。

公开(公告)号：US07859025B2

公开(公告)日：2010-12-28

申请号：US11951579

申请日：2007-12-06

申请人： Fen Chen ,  Armin Fischer

发明人： Fen Chen ,  Armin Fischer

IPC分类号： H01L45/00

CPC分类号： H01L45/00

摘要： A metal ion transistor and related methods are disclosed. In one embodiment, the metal ion transistor includes a cell positioned in at least one isolation layer, the cell including a metal ion doped low dielectric constant (low-k) dielectric material sealed from each adjacent isolation layer; a first electrode contacting the cell on a first side; a second electrode contacting the cell on a second side; and a third electrode contacting the cell on a third side, wherein each electrode is isolated from each other electrode.

摘要翻译： 公开了一种金属离子晶体管及相关方法。 在一个实施例中，金属离子晶体管包括位于至少一个隔离层中的电池，该电池包括从每个相邻隔离层密封的金属离子掺杂低介电常数（低k）电介质材料; 在第一侧上与第一电极接触的第一电极; 在第二侧接触所述电池的第二电极; 以及在第三侧与第一电极接触的第三电极，其中每个电极彼此隔离。

公开(公告)号：US20100258900A1

公开(公告)日：2010-10-14

申请号：US12420157

申请日：2009-04-08

申请人： Fen Chen ,  Jeffrey P. Gambino ,  Alvin W. Strong

发明人： Fen Chen ,  Jeffrey P. Gambino ,  Alvin W. Strong

IPC分类号： H01L23/34 ,  H01L23/52 ,  H01L21/768

CPC分类号： H01L23/585 ,  H01L23/3677 ,  H01L25/0657 ,  H01L25/50 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/00

摘要： An apparatus comprises a first layer within a semiconductor chip having active structures electrically connected to other active structures and having electrically isolated first inactive structures. A second layer within the semiconductor chip is physically connected to the first layer. The second layer comprises an insulator and has second inactive structures. The first inactive structures are physically aligned with the second inactive structures.

摘要翻译： 一种装置包括半导体芯片内的第一层，其具有与其它有源结构电连接并且具有电隔离的第一无效结构的有源结构。 半导体芯片内的第二层物理连接到第一层。 第二层包括绝缘体并具有第二非活性结构。 第一非活性结构与第二非活性结构物理对准。

公开(公告)号：US07780333B2

公开(公告)日：2010-08-24

申请号：US12106337

申请日：2008-04-21

申请人： Tung-Ming Hsu ,  Shao-Han Chang ,  Fen Chen

发明人： Tung-Ming Hsu ,  Shao-Han Chang ,  Fen Chen

IPC分类号： F21V7/04 ,  G02F1/13357

CPC分类号： G02F1/133606 ,  G02F2001/133322 ,  G02F2201/46

摘要： A backlight module includes a frame, a plurality of lamps in the frame, and an optical plate including a main body having a light input surface, and a light output surface opposite to the light input surface. The light input surface is adjacent to the lamps, and at least one bracket extension is integral with one end of the main body for fixing the optical plate to the frame. The at least one bracket extension includes a top surface for supporting a liquid crystal display panel, a side surface connecting with the top surface and being farthest from the main body, and a protecting protrusion located on the side surface for protecting a drive circuit connected to the liquid crystal display panel.

摘要翻译： 背光模块包括框架，框架中的多个灯以及包括具有光输入表面的主体和与光输入表面相对的光输出表面的光学板。 光输入表面与灯相邻，并且至少一个支架延伸部与主体的一端成一体，用于将光学板固定到框架。 所述至少一个支架延伸部包括用于支撑液晶显示面板的顶表面，与所述顶表面连接并且与所述主体最远的侧表面，以及位于所述侧表面上的用于保护与 液晶显示面板。

公开(公告)号：US07768815B2

公开(公告)日：2010-08-03

申请号：US11161941

申请日：2005-08-23

申请人： Fen Chen ,  Richard S. Kontra ,  Tom C. Lee ,  Theodore M. Levin ,  Christopher D. Muzzy ,  Timothy D. Sullivan

发明人： Fen Chen ,  Richard S. Kontra ,  Tom C. Lee ,  Theodore M. Levin ,  Christopher D. Muzzy ,  Timothy D. Sullivan

IPC分类号： G11C13/00

CPC分类号： G11C13/0009 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/04 ,  G11C13/047 ,  G11C2013/0054 ,  H01L45/1213 ,  H01L45/145

摘要： A structure and a method for operating the same. The method comprises providing a resistive/reflective region on a substrate, wherein the resistive/reflective region comprises a material having a characteristic of changing the material's reflectance due to the material absorbing heat; sending an electric current through the resistive/reflective region so as to cause a reflectance change in the resistive/reflective region from a first reflectance value to a second reflectance value different from the first reflectance value; and optically reading the reflectance change in the resistive/reflective region.

摘要翻译： 一种结构及其操作方法。 该方法包括在衬底上提供电阻/反射区域，其中电阻/反射区域包括具有由于材料吸收热而改变材料的反射率的特性的材料; 发送电流通过电阻/反射区域，以使电阻/反射区域的反射率变化从第一反射率值到不同于第一反射率值的第二反射率值; 并且光学地读取电阻/反射区域中的反射率变化。

公开(公告)号：US20100019330A1

公开(公告)日：2010-01-28

申请号：US12178766

申请日：2008-07-24

申请人： Ethan H. Cannon ,  Fen Chen

发明人： Ethan H. Cannon ,  Fen Chen

IPC分类号： H01L21/336 ,  H01L29/78

CPC分类号： H01L29/0653 ,  H01L21/26506 ,  H01L29/6659 ,  H01L29/66659 ,  H01L29/7842 ,  H01L29/7848

摘要： Device structures with a self-aligned damage layer and methods of forming such device structures. The device structure first and second doped regions of a first conductivity type defined in the semiconductor material of a substrate. A third doped region of opposite conductivity type laterally separates the first doped region from the second doped region. A gate structure is disposed on a top surface of the substrate and has a vertically stacked relationship with the third doped region. A first crystalline damage layer is defined within the semiconductor material of the substrate. The first crystalline damage layer has a first plurality of voids surrounded by the semiconductor material of the substrate. The first doped region is disposed vertically between the first crystalline damage layer and the top surface of the substrate. The first crystalline damage layer does not extend laterally into the third doped region.

摘要翻译： 具有自对准损伤层的装置结构和形成这种装置结构的方法。 该器件结构是限定在衬底的半导体材料中的第一导电类型的第一和第二掺杂区域。 相反导电类型的第三掺杂区域将第一掺杂区域与第二掺杂区域横向分离。 栅极结构设置在衬底的顶表面上，并且与第三掺杂区域具有垂直堆叠的关系。 第一晶体损伤层被限定在衬底的半导体材料内。 第一晶体损伤层具有由衬底的半导体材料包围的第一多个空隙。 第一掺杂区域垂直地设置在第一晶体损伤层和衬底的顶表面之间。 第一晶体损伤层不横向延伸到第三掺杂区域。

公开(公告)号：US20090212431A1

公开(公告)日：2009-08-27

申请号：US12035448

申请日：2008-02-22

申请人： Fen Chen ,  Cathryn Jeanne Christiansen ,  Michael Anthony Shinosky ,  Timothy Dooling Sullivan

发明人： Fen Chen ,  Cathryn Jeanne Christiansen ,  Michael Anthony Shinosky ,  Timothy Dooling Sullivan

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L21/76895 ,  H01L23/34 ,  H01L23/522 ,  H01L23/576 ,  H01L2924/0002 ,  Y10S438/917 ,  H01L2924/00

摘要： An interconnect and method of making the interconnect. The method includes forming a dielectric layer on a substrate, the dielectric layer having a top surface and a bottom surface; forming a first wire and a second wire in the dielectric layer, the first wire separated from the second wire by a region of the dielectric layer; and forming metallic nanoparticles in or on the top surface of the dielectric layer between the first and second wires, the metallic nanoparticles capable of electrically connecting the first wire and the second wire only while the nanoparticles are heated to a temperature greater than room temperature and a voltage is applied between the first and second wires.

摘要翻译： 互连和互连方法。 该方法包括在基底上形成电介质层，介电层具有顶表面和底表面; 在所述电介质层中形成第一线和第二线，所述第一线与所述第二线分离，通过所述介电层的区域; 并且在第一和第二布线之间的电介质层的顶表面中或上方形成金属纳米颗粒，仅在将纳米颗粒加热到大于室温的温度时能够电连接第一布线和第二布线的金属纳米颗粒， 在第一和第二导线之间施加电压。

公开(公告)号：US20080061902A1

公开(公告)日：2008-03-13

申请号：US11942396

申请日：2007-11-19

申请人： Fen Chen ,  Kai Feng ,  Robert Gautheir ,  Tom Lee

发明人： Fen Chen ,  Kai Feng ,  Robert Gautheir ,  Tom Lee

IPC分类号： H03H7/38

CPC分类号： H03K19/018571

摘要： A method for trimming impedance matching devices in high-speed circuits includes determining an electrical parameter associated with a first tantalum nitride (TaN) resistor used as an impedance matching device in the circuit under test, and comparing the determined electrical parameter associated with the first TaN resistor to a desired design value of the electrical parameter. The resistance value of the first TaN resistor is altered by application of a trimming voltage thereto, wherein the trimming voltage is based on a voltage-resistance characteristic curve of the first TaN resistor. It is then determined whether the altered resistance value of the first TaN resistor causes the electrical parameter to equal the desired design value thereof, and the altering of the resistance value of the first TaN resistor by application of a trimming voltage is repeated until the electrical parameter equals the desired design value thereof.

公开(公告)号：US20070189015A1

公开(公告)日：2007-08-16

申请号：US11508369

申请日：2006-08-23

申请人： Shao-Han Chang ,  Fen Chen

发明人： Shao-Han Chang ,  Fen Chen

IPC分类号： F21V7/00

CPC分类号： F21V29/74 ,  F21V29/004 ,  F21V29/76 ,  F21Y2115/10 ,  G02F1/133603 ,  G02F1/133611

摘要： A light source module includes at least a light source and a housing. The housing includes a base having a slanted reflective surface, a plurality of sidewalls extending out of a peripheral of the base cooperatively defining an opening with the base, the sidewall aligned with a trough of the slanted reflective surface having an inner surface and an outer surface opposite to the inner surface, and a plurality of fin structures formed on the outer surface of the sidewall. The light source is fixed on the inner surface of the sidewall. Light rays emitted from the light source being reflected at the slanted reflective surface toward the opening. A backlight system using the light source module is also provided. The present backlight system has a good heat dissipation capability due to an employment of the present light source module, and can be configured to be a thin body.

摘要翻译： 光源模块至少包括光源和壳体。 壳体包括具有倾斜反射表面的底座，从基座的周边延伸出的多个侧壁协同地限定具有基部的开口，与倾斜反射表面的槽对准的侧壁具有内表面和外表面 与内表面相对，以及形成在侧壁的外表面上的多个翅片结构。 光源固定在侧壁的内表面上。 从光源发射的光线在倾斜的反射面朝向开口反射。 还提供了使用光源模块的背光系统。 由于使用本发明的光源模块，本背光系统具有良好的散热能力，并且可以被配置为薄体。

公开(公告)号：US20070103228A1

公开(公告)日：2007-05-10

申请号：US11161932

申请日：2005-08-23

申请人： Fen Chen ,  Douglas Coolbaugh ,  Baozhen Li

发明人： Fen Chen ,  Douglas Coolbaugh ,  Baozhen Li

IPC分类号： H01L25/00

CPC分类号： H01L27/101 ,  H01L23/5252 ,  H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： A programmable passive device comprising a first node and a second node. A plurality of passive device elements electrically coupled to the first node. A plurality of switches are electrically coupled to at least the second node and selectively coupled to a number of the plurality of passive device elements to provide the programmable passive device with a pre-determined value.

摘要翻译： 一种包括第一节点和第二节点的可编程无源设备。 电耦合到第一节点的多个无源器件元件。 多个开关电耦合到至少第二节点并且选择性地耦合到多个无源器件元件，以向可编程无源器件提供预定值。