公开(公告)号：US06784464B2

公开(公告)日：2004-08-31

申请号：US10396402

申请日：2003-03-26

申请人： Hideki Ichikawa ,  Mamoru Okanishi ,  Terumitsu Santo ,  Toshihiko Yoshida

发明人： Hideki Ichikawa ,  Mamoru Okanishi ,  Terumitsu Santo ,  Toshihiko Yoshida

IPC分类号： H01L3300

CPC分类号： H01L24/85 ,  H01L24/28 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L2224/05599 ,  H01L2224/29144 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/4823 ,  H01L2224/49109 ,  H01L2224/78 ,  H01L2224/78301 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10336 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/181 ,  H01S5/02212 ,  H01S5/02248 ,  H01S5/02276 ,  H01S5/0683 ,  H01S5/4025 ,  H01L2924/00 ,  H01L2924/20752 ,  H01L2924/207

摘要： There is provided is a semiconductor laser device capable of simplifying fabricating processes with a simple construction and easily mounting two semiconductor laser elements and a monitoring PD on a compact package and a wire bonding method for the semiconductor laser device. There are provided a stem 100 provided with a plurality of lead pins 121 through 124, a sub-mount 160 that is die-bonded onto the stem 100 and has its surface formed integrally with a monitoring PD 140 and two semiconductor laser elements 131 and 132 that are die-bonded onto the sub-mount 160 and have emission light monitored by the monitoring PD 140. A first bonding surface i.e. anode electrode 183 of the monitoring PD 140 and a second bonding surface i.e. end surface 123a of a lead pin 123 that is approximately perpendicular to the first bonding surface are wire-bonded to each other.

摘要翻译： 提供了一种半导体激光装置，其能够以简单的结构简化制造工艺，并且容易地将紧凑型封装上的两个半导体激光元件和监视PD以及用于半导体激光器件的引线接合方法。 设置有设置有多个引线引脚121至124的杆100，芯片粘合到杆100上并且其表面与监视PD 140和两个半导体激光元件131和132一体形成的子安装件160 其被裸片接合到子安装件160上并且具有由监控PD 140监控的发射光。监视PD 140的第一接合表面，即阳极电极183和第二接合表面，即导引销123的端面123a，其中 大致垂直于第一接合表面彼此线接合。

公开(公告)号：US06562693B2

公开(公告)日：2003-05-13

申请号：US09803658

申请日：2001-03-12

申请人： Hideki Ichikawa ,  Mamoru Okanishi ,  Terumitsu Santo ,  Toshihiko Yoshida

发明人： Hideki Ichikawa ,  Mamoru Okanishi ,  Terumitsu Santo ,  Toshihiko Yoshida

IPC分类号： H01L2176

CPC分类号： H01L24/85 ,  H01L24/28 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L2224/05599 ,  H01L2224/29144 ,  H01L2224/45015 ,  H01L2224/451 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/4823 ,  H01L2224/49109 ,  H01L2224/78 ,  H01L2224/78301 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10336 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/181 ,  H01S5/02212 ,  H01S5/02248 ,  H01S5/02276 ,  H01S5/0683 ,  H01S5/4025 ,  H01L2924/00 ,  H01L2924/20752 ,  H01L2924/207

摘要： There is provided is a semiconductor laser device capable of simplifying fabricating processes with a simple construction and easily mounting two semiconductor laser elements and a monitoring PD on a compact package and a wire bonding method for the semiconductor laser device. There are provided a stem 100 provided with a plurality of lead pins 121 through 124, a sub-mount 160 that is die-bonded onto the stem 100 and has its surface formed integrally with a monitoring PD 140 and two semiconductor laser elements 131 and 132 that are die-bonded onto the sub-mount 160 and have emission light monitored by the monitoring PD 140. A first bonding surface i.e. anode electrode 183 of the monitoring PD 140 and a second bonding surface i.e. end surface 123a of a lead pin 123 that is approximately perpendicular to the first bonding surface are wire-bonded to each other.

公开(公告)号：US5450237A

公开(公告)日：1995-09-12

申请号：US300070

申请日：1994-09-02

申请人： Toshihiko Yoshida ,  Osamu Yamamoto ,  Saburo Yamamoto ,  Shohichi Kato ,  Masumi Nakamichi ,  Toshimasa Hamada ,  Sadayoshi Matsui

发明人： Toshihiko Yoshida ,  Osamu Yamamoto ,  Saburo Yamamoto ,  Shohichi Kato ,  Masumi Nakamichi ,  Toshimasa Hamada ,  Sadayoshi Matsui

IPC分类号： G02B27/09 ,  G02B27/58 ,  G11B7/12 ,  G11B7/135 ,  G02B27/46

CPC分类号： G11B7/1374 ,  G02B27/58 ,  G11B7/123 ,  G11B7/1381

摘要： A hyper-resolution optical device which can focus a beam of light to a diameter less than the diffraction limit. The optical device has an optical system disposed on a transmissive substrate. One component in the optical system is a hyper-resolution optical component which passes or reflects light and which has a central portion which does not pass or reflect light, respectively. The hyper-resolution optical component can be integrated with the transmissive substrate. Such optical devices are particularly suitable for optical pick-up devices, laser printers, sensors.

摘要翻译： 可以将光束聚焦到小于衍射极限的直径的超分辨率光学装置。 光学装置具有设置在透射基板上的光学系统。 光学系统中的一个部件是通过或反射光的超分辨率光学部件，并且具有不分别通过或反射光的中心部分。 超分辨率光学部件可以与透射基板一体化。 这种光学装置特别适用于光学拾取装置，激光打印机，传感器。

公开(公告)号：US5224195A

公开(公告)日：1993-06-29

申请号：US723500

申请日：1991-06-28

申请人： Toshihiko Yoshida ,  Masanori Watanabe ,  Osamu Yamamoto

发明人： Toshihiko Yoshida ,  Masanori Watanabe ,  Osamu Yamamoto

IPC分类号： G02F1/37 ,  G02F1/377

CPC分类号： G02F1/377 ,  G02F2001/374 ,  G02F2201/302

摘要： A light wavelength converter which includes a laser beam source for radiating fundamental waves, a first optical waveguide formed on a substrate so as to convert the fundamental waves into harmonics which are radiated through the substrate, a grating coupler provided on the substrate so as to receive the harmonics propagated through the substrate, and a second optical waveguide formed on the substrate, the second optical guide being connected to the grating coupler so as to radiate the harmonics outside.

公开(公告)号：US5130210A

公开(公告)日：1992-07-14

申请号：US571861

申请日：1990-08-24

申请人： Hiroyuki Iwasaki ,  Fumiya Ishizaki ,  Toshihiko Yoshida ,  Nobuaki Tagaya ,  Isao Mukaizawa ,  Hiroshi Seto

发明人： Hiroyuki Iwasaki ,  Fumiya Ishizaki ,  Toshihiko Yoshida ,  Nobuaki Tagaya ,  Isao Mukaizawa ,  Hiroshi Seto

IPC分类号： C01G25/02 ,  C04B35/486 ,  H01M8/12

CPC分类号： C01G25/02 ,  C04B35/486 ,  H01M8/1253 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/40 ,  C01P2006/90 ,  Y02E60/525 ,  Y02P70/56

摘要： The mechanical strength of stabilized zirconia is improved without lowering the ion conductivity by providing a solid electrolyte comprising stabilized zirconia and a metal oxide dispersed within grains or grain boundaries of stabilized zirconia, the metal oxide having an average submicron particle size and stabilized zirconia having an average particle size larger than 1 micron, typically larger than 10 .mu.m or even 100 .mu.m.

公开(公告)号：US5025449A

公开(公告)日：1991-06-18

申请号：US500039

申请日：1990-03-27

申请人： Osamu Yamamoto ,  Toshihiko Yoshida

发明人： Osamu Yamamoto ,  Toshihiko Yoshida

IPC分类号： H01S3/094 ,  H01S3/0941 ,  H01S3/131 ,  H01S5/024 ,  H01S5/06 ,  H01S5/0683

CPC分类号： H01S5/0683 ,  H01S3/09415 ,  H01S3/09408 ,  H01S3/1312 ,  H01S5/02415 ,  H01S5/06837 ,  H01S5/0687

摘要： Disclosed is an optical pumping-type solid-state laser apparatus in which a semiconductor laser device is used as a light source for optical pumping. The solid-state laser apparatus includes first and second photodetectors. The former detects the amount of light emitted from the semiconductor laser device, and the latter detects the amount of laser light transmitted through a filter plate which has the same light-absorbance characteristics as that of the solid-state laser. In accordance with the detected results, a driving circuit drives the semiconductor laser device to obtain a laser beam with an appropriate output level and a temperature regulator regulates the temperature of the semiconductor laser device so that the wavelength of the laser light to be emitted therefrom is accurately adjusted to be the same as that of the light to be efficiently absorbed by the solid-state laser. The laser beam with the accurately adjusted wavelength is used for optically pumping the solid-state laser.

公开(公告)号：US5007694A

公开(公告)日：1991-04-16

申请号：US457320

申请日：1989-12-28

申请人： Osamu Yamamoto ,  Toshihiko Yoshida

发明人： Osamu Yamamoto ,  Toshihiko Yoshida

IPC分类号： G02F1/313 ,  G02F1/37 ,  G02F1/377

CPC分类号： G02F1/377

摘要： A light wavelength converter comprising a substrate that is made of a material attaining a non-linear effect; an optical waveguide that is formed within said substrate; a light source that irradiates said optical waveguide with a pair of lights having a fundamental waveguide, said pair of lights being propagated within said optical waveguide and intersecting each other within said optical waveguide to thereby generate a second harmonic light; and a light deflection means that changes the intersection angle between the pair of waveguiding lights based on an electric signal that is input into said light deflection means, whereby, the phase matching condition of a pair of incident laser beams can be readily satisfied and, even when the ambient temperature changes, the second harmonic light can be stably generated.

公开(公告)号：US4738729A

公开(公告)日：1988-04-19

申请号：US6869

申请日：1987-01-27

申请人： Toshihiko Yoshida ,  Mitsuo Matsumura ,  Hideo Yamamoto ,  Kunio Asai ,  Osamu Nakamura ,  Yoshinobu Okayasu

发明人： Toshihiko Yoshida ,  Mitsuo Matsumura ,  Hideo Yamamoto ,  Kunio Asai ,  Osamu Nakamura ,  Yoshinobu Okayasu

IPC分类号： H01L31/0376 ,  H01L31/075 ,  H01L31/20 ,  H01L31/06

CPC分类号： H01L31/202 ,  H01L31/03762 ,  H01L31/075 ,  Y02E10/548 ,  Y02P70/521

摘要： This invention disclose an amorphous silicon semiconductor film containing at least hydrogen, carbon and oxygen as impurities and the method to produce it. The film is characterized in that the total quantity of carbon and oxygen in said film is at least 0.1 atom %. Since the film has small light absorption coefficient and its optical refractive index is controllable, an excellent window material for solar cell can be provided. Since adherence of the film with a metal electrode as well as with a transparent electrode is sufficient, good reproducibility in making solar cells using the film of this invention as a window material was realized.

摘要翻译： 本发明公开了至少含有氢，碳和氧作为杂质的非晶硅半导体膜及其制造方法。 该膜的特征在于，所述膜中的碳和氧的总量为至少0.1原子％。 由于膜具有小的光吸收系数并且其光学折射率可控，因此可以提供用于太阳能电池的优良窗材料。 由于具有金属电极以及透明电极的膜的附着是足够的，所以实现了使用本发明的膜作为窗口材料制造太阳能电池的重现性良好。

公开(公告)号：US4598304A

公开(公告)日：1986-07-01

申请号：US790781

申请日：1985-10-23

申请人： Kazunobu Tanaka ,  Akihisa Matsuda ,  Toshihiko Yoshida

发明人： Kazunobu Tanaka ,  Akihisa Matsuda ,  Toshihiko Yoshida

IPC分类号： H01L21/205 ,  H01L21/30 ,  H01L29/04 ,  H01L29/167 ,  H01L49/02 ,  H01L31/06

CPC分类号： H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/3003 ,  H01L29/04 ,  H01L29/167

摘要： a-type or n-type thin film of silicon has the concentration of an impurity dopant element decreased adjacent to a boundary of film. The impurity dopant element in the portion of the silicon film from the surface to a predetermined depth is replaced by an element selected from the group consisting of fluorine, chlorine, bromine, iodine, and hydrogen.

公开(公告)号：US4490208A

公开(公告)日：1984-12-25

申请号：US394074

申请日：1982-07-01

申请人： Kazunobu Tanaka ,  Akihisa Matsuda ,  Toshihiko Yoshida

发明人： Kazunobu Tanaka ,  Akihisa Matsuda ,  Toshihiko Yoshida

IPC分类号： H01L21/205 ,  H01L21/30 ,  H01L29/04 ,  H01L29/167 ,  C30B25/02

CPC分类号： H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/3003 ,  H01L29/04 ,  H01L29/167

摘要： A method of producing thin films of silicon is characterized in that a p-type or n-type thin film of doped silicon having a dopant or impurity element is placed in a plasma atmosphere of elements selected from the group consisting of fluorine, chlorine, bromine, iodine, and hydrogen, whereby the concentration of an impurity element in the thin film is decreased adjacent to the surface of thin film and accordingly the impurity element is replaced by the plasma element adjacent to the surface of the thin film.

摘要翻译： 一种制造硅薄膜的方法的特征在于，将具有掺杂剂或杂质元素的掺杂硅的p型或n型薄膜置于等离子体气氛中，所述元素选自氟，氯，溴 ，碘和氢，由此薄膜中的杂质元素的浓度相邻于薄膜的表面而降低，因此杂质元素被与薄膜表面相邻的等离子体元素代替。