公开(公告)号：US4885748A

公开(公告)日：1989-12-05

申请号：US168668

申请日：1988-03-16

申请人： Kurt Hoffmann ,  Hans-Dieter Oberle ,  Rainer Kraus ,  Oskar Kowarik ,  Manfred Paul

发明人： Kurt Hoffmann ,  Hans-Dieter Oberle ,  Rainer Kraus ,  Oskar Kowarik ,  Manfred Paul

IPC分类号： G11C29/00 ,  G11C11/401 ,  G11C29/34

CPC分类号： G11C29/34

摘要： A method and circuit configuration for the parallel input of data items in the form of a test pattern into a block of a semiconductor memory having a plurality of storage cells. For test purposes, data items are simultaneously input in parallel into the storage cells.

摘要翻译： 一种用于将测试图形形式的数据项并行输入到具有多个存储单元的半导体存储器的块中的方法和电路配置。 为了测试目的，数据项同时并入输入到存储单元中。

公开(公告)号：US4742490A

公开(公告)日：1988-05-03

申请号：US811932

申请日：1985-12-20

申请人： Kurt Hoffmann

发明人： Kurt Hoffmann

IPC分类号： G06F11/22 ,  G11C29/00 ,  G11C29/12 ,  G11C29/26 ,  G11C29/34 ,  G11C7/00

CPC分类号： G11C29/26 ,  G11C29/12

摘要： Integrated semiconductor memory includes n identical memory cell fields, each having a data width equal to m, n . m data lines for writing-in and reading-out memory data into and out of the memory cell fields, m first data separators each having an assigned data input terminal for applying the memory data as a function of addressing data when written-in, m second data separators for selecting one of the n data lines in response to the addressing data when reading out the memory data and for applying the memory data to the outputs of the second data separators, data output terminals for receiving the memory data, evaluation circuits connected to data lines for feeding data to the data output terminals in response to a control signal for activating an error signal to the data output terminals upon the occurrence of faulty memory data, third data separators for transferring the memory data in parallel to all of the n data lines in response to the control signal, and fourth data separators for selectively feeding either the memory data selected by the second data separators or the output signal generated by the evaluation circuit to the data output terminals in response to the control signal.

摘要翻译： 集成半导体存储器包括n个相同的存储单元场，每个具有数据宽度等于m，n。 m个用于将存储器数据写入和读出存储单元字段的数据线，m个第一数据分离器，每个第一数据分离器具有分配的数据输入端，用于在写入时作为寻址数据的函数应用存储器数据，m 第二数据分离器，用于在读出存储器数据时响应于寻址数据选择n条数据线之一，并将存储器数据应用于第二数据分离器的输出，用于接收存储器数据的数据输出端，连接的评估电路 用于响应于用于在发生故障存储器数据时向数据输出端激活错误信号的控制信号将数据馈送到数据输出端的数据线，用于将存储器数据并行传送到所有n个的第三数据分离器 响应于控制信号的数据线，以及用于选择性地馈送由第二数据分离器选择的存储器数据或输出信号类型的第四数​​据分离器 由评估电路响应于控制信号输出到数据输出端。

公开(公告)号：US4318188A

公开(公告)日：1982-03-02

申请号：US40527

申请日：1979-05-21

申请人： Kurt Hoffmann

发明人： Kurt Hoffmann

IPC分类号： G11C7/16 ,  G11C19/18 ,  G11C19/28 ,  G11C27/00 ,  G11C27/04 ,  G11C13/00

CPC分类号： G11C7/16 ,  G11C19/186 ,  G11C19/287 ,  G11C27/005 ,  G11C27/04

摘要： A microphone, for receiving an acoustic signal, is connected to a transducer which changes the analog signal delivered by the microphone into a sufficiently dense series of storable pulses in such a manner that the series contains the information necessary for the reproduction of the analog signal. The pulses delivered by the transducer can be pulse amplitude modulated (PAM) signals. The transducer must be connected to an analog memory. In the case where the signals are digital, such as pulse code modulated (PCM) signals, a digital memory is used. For reproduction, the pulses recalled from memory, in the first case, are fed via a low pass filter to an amplifier and a loud speaker. In the second case, the pulses are first converted into an analog form in a digital/analog converter. Stacked-gate injection metal-oxide-semiconductor (SIMOS) memories may be considered as the analog memories and, as digital memories, electrically alterable read-only memories (EAROM) may be utilized.

摘要翻译： 用于接收声信号的麦克风连接到换能器，该换能器将由麦克风传递的模拟信号改变成足够密集的可存储脉冲序列，使得该系列包含再现模拟信号所需的信息。 由传感器传送的脉冲可以是脉冲幅度调制（PAM）信号。 传感器必须连接到模拟存储器。 在诸如脉冲编码调制（PCM）信号的数字信号的情况下，使用数字存储器。 对于再现，从存储器回忆的脉冲在第一种情况下通过低通滤波器馈送到放大器和扬声器。 在第二种情况下，脉冲首先在数字/模拟转换器中转换为模拟形式。 堆叠栅极注入金属氧化物半导体（SIMOS）存储器可以被认为是模拟存储器，并且作为数字存储器，可以使用电可更改的只读存储器（EAROM）。

公开(公告)号：US4266151A

公开(公告)日：1981-05-05

申请号：US20857

申请日：1979-03-15

申请人： Kurt Hoffmann ,  Roland Ernst

发明人： Kurt Hoffmann ,  Roland Ernst

IPC分类号： G05F3/20 ,  G11C11/407 ,  H01L21/822 ,  H01L27/04 ,  H01L27/06 ,  H01L27/10 ,  H01L29/78 ,  H03K3/011 ,  H03K19/094 ,  H03K3/01

CPC分类号： H01L27/10 ,  G05F3/205 ,  H01L27/04 ,  H01L29/78 ,  H03K3/011

摘要： A monolithically integrated MOS-circuit with a substrate bias voltage generator is disclosed. A generator, a control loop, a threshold voltage detector, and a pump circuit are provided. An acceleration of the regulation of the substrate bias voltage is achieved wherein the output signal of an oscillator is connected to the Reset or Set input of a RS flip-flop. The two outputs of the flip-flop are applied in common to the substrate of the MOS-circuit via a respective pump circuit. A control loop with the threshold voltage detector serving for the regulation of the substrate bias voltage controls the flip onset via an additional input of the flip-flop and, thus, the substrate bias voltage.

摘要翻译： 公开了一种具有衬底偏置电压发生器的单片集成MOS电路。 提供发电机，控制回路，阈值电压检测器和泵电路。 实现了衬底偏置电压调节的加速度，其中振荡器的输出信号连接到RS触发器的复位或置位输入。 触发器的两个输出通过相应的泵电路共同施加到MOS电路的基板。 具有用于调节衬底偏置电压的阈值电压检测器的控制回路通过触发器的附加输入并因此控制衬底偏置电压的翻转开始。

公开(公告)号：US4208670A

公开(公告)日：1980-06-17

申请号：US943066

申请日：1978-09-18

申请人： Kurt Hoffmann ,  Reiner Sigusch

发明人： Kurt Hoffmann ,  Reiner Sigusch

IPC分类号： H01L27/10 ,  G11C11/404 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/78

CPC分类号： H01L27/10805 ,  G11C11/404

摘要： A one-transistor storage element system and a method for producing the same is disclosed wherein each storage element has a sselector field effect transistor and a storage capacitor. A doped semiconductor layer is provided having an oppositely doped bit line provided at a surface thereof, an oppositely doped source zone connecting to the bit line by an oppositely doped connecting zone, and an oppositely doped drain zone also provided at a surface of the semiconductor layer. An insulating layer is provided over the surface of the semiconductor layer and an electrically conductive coating is provided thereon. A first separate part of the conductive coating forms a word line which is positioned over a gap between the source and drain zones. Portions of the word line form a gate beneath which a channel of the transistor is formed. A second separate part of the electrically conductive coating is formed over a portion of the semiconductor layer adjacent the drain zone and forms one of the electrodes of the storage capacitor. The other electrode of the storage capacitor is either provided as a diffusion zone in the semiconductor layer or may be an induced zone. A reference potential line formed by a connecting third part of the electrical conductive layer is also provided.

摘要翻译： 公开了一种单晶体管存储元件系统及其制造方法，其中每个存储元件具有选择器场效应晶体管和存储电容器。 提供掺杂半导体层，其具有设置在其表面的相对掺杂的位线，通过相反掺杂的连接区连接到位线的相反掺杂的源极区，以及还设置在半导体层的表面处的相对掺杂的漏极区 。 在半导体层的表面上设置绝缘层，并且在其上提供导电涂层。 导电涂层的第一分离部分形成位于源极和漏极区之间的间隙上的字线。 字线的一部分形成栅极，在该栅极下方形成晶体管的沟道。 导电涂层的第二分离部分形成在与漏极区相邻的半导体层的一部分上，并形成存储电容器的一个电极。 存储电容器的另一个电极被提供为半导体层中的扩散区，或者可以是诱导区。 还提供了由导电层的连接第三部分形成的参考电位线。

公开(公告)号：US4091378A

公开(公告)日：1978-05-23

申请号：US612570

申请日：1975-09-11

申请人： Kurt Hoffmann

发明人： Kurt Hoffmann

IPC分类号： H03M1/36 ,  H03M1/00 ,  H03K13/02

CPC分类号： H03M1/802

摘要： An arrangement, particularly an analog-digital/digital-analog converter having a resistance line or chain, and a plurality of voltage comparators, each preferably comprising an insulator-layer, field-transistor and a load element in the form of a resistance, capacitor or diode, in which the control electrode terminal of each transistor forms a first comparator input, which is connected to a respective point on the resistance and with each cooperable load element being connected to one of the two remaining transistor terminals, one of which also simultaneously forms the output of such voltage comparator, and with the second comparator input for such voltage comparator being formed by the other transistor terminal. Preferably, the transistors are formed on a semiconductor substrate which has doped areas forming respective source and drain electrodes with the associated gate electrodes being disposed in insulated relation to the semiconductor substrate and formed of an electrical resistance material which serially interconnects the adjacent gate electrodes of the transistors, with one of the doped electrodes of each transistor comprising a respective part of a continuously doped area of the semiconductor substrate which thus forms a common terminal for all transistors, while the other doped electrode of each transistor extends outwardly away from such common terminal to form respective individual terminals. The invention also includes the method of operating such structures.

摘要翻译： 一种布置，特别是具有电阻线或链的模拟数字/数模转换器和多个电压比较器，每个电压比较器优选地包括绝缘体层，场晶体管和负载元件，其形式为电阻，电容器 或二极管，其中每个晶体管的控制电极端子形成第一比较器输入，其连接到电阻上的相应点，并且每个可配合的负载元件连接到两个剩余的晶体管端子中的一个，其中之一也同时 形成这种电压比较器的输出，并且用于这种电压比较器的第二比较器输入由另一个晶体管端子形成。 优选地，晶体管形成在具有形成相应的源极和漏极的掺杂区域的半导体衬底上，其中相关联的栅极电极以与半导体衬底绝缘的关系设置，并且由电阻材料形成，该电阻材料将 晶体管，其中每个晶体管的掺杂电极之一包括半导体衬底的连续掺杂区域的相应部分，由此形成用于所有晶体管的公共端子，而每个晶体管的另一个掺杂电极从该公共端子向外延伸到 形成各自的终端。 本发明还包括操作这种结构的方法。

公开(公告)号：US4067001A

公开(公告)日：1978-01-03

申请号：US689809

申请日：1976-05-25

申请人： Kurt Hoffmann

发明人： Kurt Hoffmann

IPC分类号： G11C8/00 ,  G11C11/404 ,  G11C19/28 ,  H01L27/108 ,  H01L29/43 ,  H01L29/768 ,  G11C11/40 ,  G11C13/00

CPC分类号： H01L29/76866 ,  G11C11/404 ,  G11C19/285 ,  G11C8/005 ,  H01L27/108 ,  H01L29/435

摘要： A line as disclosed for transporting charges from one point to another. The substrate of semiconductive material has an electrical insulating layer arranged thereon. Upon this layer, a resistive layer is applied having electrodes at end points thereof for producing a drift field. Diffusion areas are arranged at the end points which are oppositely doped with respect to the semiconductor material situated under the conductive layer. Storage elements in a storage field are connected to the line and write/read circuits are positioned at ends of the line. Taps may be connected at intermediate points along the line to permit application of differing voltages to enhance charge shifting along the line.

摘要翻译： 披露的一条线路，用于将费用从一点运送到另一个点。 半导体材料的衬底具有布置在其上的电绝缘层。 在该层上，施加电阻层，其端部具有电极以产生漂移场。 扩散区域布置在相对于位于导电层下方的半导体材料相对掺杂的端点处。 存储区域中的存储元件连接到线路，并且写入/读取电路位于线路的端部。 水龙头可以沿着线路的中间点连接，以允许施加不同的电压以增强沿线的电荷移动。

公开(公告)号：US4048519A

公开(公告)日：1977-09-13

申请号：US717705

申请日：1976-08-25

申请人： Kurt Hoffmann ,  Guenther Meusburger ,  Gottfried Wotruba

发明人： Kurt Hoffmann ,  Guenther Meusburger ,  Gottfried Wotruba

IPC分类号： G11C27/04 ,  G11C11/24 ,  G11C11/34 ,  G11C19/28 ,  H01L29/768 ,  H03H7/30 ,  H03H11/26 ,  H03K5/02 ,  H01L29/78 ,  H03K5/18

CPC分类号： H03K5/023 ,  G11C11/24 ,  G11C11/34 ,  G11C19/28 ,  G11C19/285 ,  H01L29/76825 ,  H03H7/30

摘要： Regenerator circuit for CCD elements in which charge representing information is transferred from a first CCD element to a second CCD element. The circuit includes a first MOS capacitance and a second capacitance connected in series with the first capacitance, the point at which the two capacitances are connected with one another being connected to the input of said second CCD. The output of the first CCD includes an output stage having an output diffusion zone. A transistor is connected between a terminal to which a potential .phi..sub.v can be connected and the point between said first and second capacitances. This transistor has a gate electrode which is connected by a line to the output diffusion zone of the first CCD.

摘要翻译： 用于CCD元件的再生电路，其中表示信息的电荷从第一CCD元件传送到第二CCD元件。 电路包括与第一电容串联连接的第一MOS电容和第二电容，两个电容彼此连接的点被连接到所述第二CCD的输入端。 第一CCD的输出包括具有输出扩散区的输出级。 晶体管连接在可以连接电位ph的端子与所述第一和第二电容之间的点之间。 该晶体管具有通过线连接到第一CCD的输出扩散区的栅电极。

公开(公告)号：US07423088B2

公开(公告)日：2008-09-09

申请号：US10515900

申请日：2003-05-22

申请人： Dietmar Mäder ,  Kurt Hoffmann ,  Hans-Werner Schmidt

发明人： Dietmar Mäder ,  Kurt Hoffmann ,  Hans-Werner Schmidt

IPC分类号： C08F8/00

CPC分类号： C08K5/20 ,  C08L23/10

摘要： A composition containing (1) a crystalline polypropylene resin and (2) one or more β-nucleating agents of the formula (I), wherein R1, R2 and R3, independently of one another, are C1-C20alkyl, C2-Calkyl substituted by C1-C10alkylamino, di(C1-C10alkyl)amino, C1-C10alkyloxy or hydroxy; C3-C20alkenyl, C5-C12cycloalkyl, C5-C12Cycloalkyl substituted by 1, 2 or 3 C1-C10alkyl; cyclohexylmethyl; cyclohexylmethyl substituted by 1, 2 or 3 C1-C10alkyl; C5-C9cycloalkenyl, C5-C9cycloalkenyl substituted by 1, 2 or 3 C1-C10alkyl; phenyl substituted by 1, 2 or 3 radicals selected from the group consisting of C1-C10-oalkyl, C1-C10alkyloxy, hydroxy, halogen, trihalogenmethyl, trihalogenmethoxy, benzoyl, phenylamino, acylamino and phenylazo; C7-C9phenylalkyl, C7-C9phenylalkyl which is substituted on the phenyl by 1, 2 or 3 radicals selected from the group consisting of C1-C10alkyl, C1-C10alkoxy and hydroxy; naphthyl, naphthyl substituted by C1C10alkyl, adamantyl, or a 5 to 6 membered heterocyclic group; characterized in that the polypropylene resin has a content of β-form crystals of at least 10% calculated by means of the following equation β-form crystal content (%)=100×Pβ1,/(Pa1+Pa2+Pa3+Pβ1) where Pa1 to Pa3 are respective peak heights (maxima) of the a-form and Pβ1 is a peak height (maximum) of the β-form determined by wide angle X-ray scattering.

公开(公告)号：US20080194743A1

公开(公告)日：2008-08-14

申请号：US12082563

申请日：2008-04-11

申请人： Bruno Rotzinger ,  Kurt Hoffmann ,  Dietmar Mader ,  Neil Dunski

发明人： Bruno Rotzinger ,  Kurt Hoffmann ,  Dietmar Mader ,  Neil Dunski

IPC分类号： C08K5/16 ,  C08K5/5393 ,  C08K5/524 ,  C08K5/1535

CPC分类号： C08K5/005 ,  C08K5/0075 ,  C08K5/1545 ,  C08K5/17 ,  C08K5/20 ,  C08K5/32

摘要： The invention describes novel mixtures comprising i) a processing stabilizer selected from the group consisting of hydroxylamine stabilizers, nitrone stabilizers, benzofuran-2-one stabilizers and/or a compound of the formula I R2 is C7-C30alkyl, R3 is C1-C30alkyl, and ii) an antistatic agent selected from the group consisting of an ethoxylated amine and/or an ethoxylated amide, as stabilizers for protecting organic materials, in particular synthetic polymers, against oxidative, thermal or light-induced degradation.

摘要翻译： 本发明描述了新的混合物，其包括i）选自羟胺稳定剂，硝酮稳定剂，苯并呋喃-2-酮稳定剂和/或式IR 2的化合物的加工稳定剂是C < 其中R 3是C 1 -C 30烷基，且R 3是C 1 -C 30烷基，和 ii）选自乙氧基化胺和/或乙氧基化酰胺的抗静电剂作为用于保护有机材料，特别是合成聚合物的稳定剂，防止氧化，热或光诱导的降解。