Target tiles in a staggered array
    61.
    发明申请
    Target tiles in a staggered array 审中-公开
    目标瓦片在交错阵列中

    公开(公告)号:US20060006064A1

    公开(公告)日:2006-01-12

    申请号:US11158270

    申请日:2005-06-21

    申请人: Avi Tepman

    发明人: Avi Tepman

    IPC分类号: C23C14/00

    CPC分类号: H01J37/3423 C23C14/3407

    摘要: A sputtering target, particularly for sputter depositing a target material onto large rectangular panels, in which a plurality of target tiles are bonded to a backing plate in a two-dimensional non-rectangular array such that the tiles meet at interstices of no more than three tile, thus locking the tiles against excessive misalignment during bonding and repeated thermal cycling. The rectangular tiles may be arranged in staggered rows or in a herringbone or zig-zag pattern. Hexagonal and triangular tiles also provide many of the advantages of the invention. Sector-shaped tiles may be arranged in a circular target with a staggered offset at the center.

    摘要翻译: 一种溅射靶,特别是用于将目标材料溅射沉积到大矩形板上,其中多个目标瓦片以二维非矩形阵列结合到背板上,使得瓦片在不超过三个的间隙处相遇 从而在接合和重复热循环过程中将瓷砖锁定在过大的未对准位置。 矩形瓦片可以以交错的行或人字形或锯齿形图案布置。 六角形和三角形瓦片也提供了本发明的许多优点。 扇形瓦片可以布置在圆形目标中,在中心具有错开的偏移。

    Two dimensional magnetron scanning for flat panel sputtering
    63.
    发明申请
    Two dimensional magnetron scanning for flat panel sputtering 有权
    二维磁控管扫描用于平板溅射

    公开(公告)号:US20050145478A1

    公开(公告)日:2005-07-07

    申请号:US10863152

    申请日:2004-06-07

    申请人: Avi Tepman

    发明人: Avi Tepman

    IPC分类号: C23C14/35 H01J37/34

    CPC分类号: C23C14/35 H01J37/3408

    摘要: A generally rectangular magnetron placed at the back of a rectangular target to intensify the plasma in a sputter reactor configured for sputtering target material onto a rectangular panel. The magnetron has a size only somewhat less than that of the target and is scanned in the two perpendicular directions of the target with a scan length of, for example, about 100 mm for a 2 m target. The scan may follow a double-Z pattern along two links parallel to a target side and the two connecting diagonals. The magnetron includes a closed plasma loop formed in a convolute shape, for example, serpentine or rectangularized helix with an inner pole of nearly constant width extending along a single path and having one magnetic polarity completely surrounded by an outer pole having the opposed polarity.

    摘要翻译: 放置在矩形靶的背面的大致矩形的磁控管,以在用于将靶材溅射到矩形面板上的溅射反应器中加强等离子体。 磁控管的尺寸仅略低于目标的尺寸,并且在靶的两个垂直方向上扫描,扫描长度例如对于2m靶的扫描长度为约100mm。 扫描可以沿着平行于目标侧的两个链接和两个连接对角线沿着双Z图案。 磁控管包括形成为卷积形状的闭合等离子体环,例如蛇形或矩形螺旋,具有几乎恒定宽度的内极,沿着单个路径延伸,并具有完全被具有相反极性的外极包围的一个磁极。

    Clamshell and small volume chamber with fixed substrate support
    64.
    发明授权
    Clamshell and small volume chamber with fixed substrate support 有权
    蛤壳式和小容积室具有固定衬底支撑

    公开(公告)号:US06866746B2

    公开(公告)日:2005-03-15

    申请号:US10302774

    申请日:2002-11-21

    摘要: Embodiments of the present invention generally relate to a clamshell and small volume chamber with a fixed substrate support. One embodiment of a processing chamber includes a fixed substrate support having a substrate receiving surface, a pumping ring disposed around a perimeter of the substrate receiving surface, and a gas distribution assembly disposed over the fixed substrate support. The pumping ring forms at least a portion of a pumping channel and has one or more apertures formed therethrough. The chamber may further include a gas-flow diffuser disposed radially inward of the apertures of the pumping ring. Another embodiment of a processing chamber includes a first assembly comprising a fixed substrate support and a second assembly comprising a gas distribution assembly. The first assembly includes a first assembly body that is shaped and sized so that at least a portion of the first assembly body is below the substrate receiving surface of the substrate support. A hinge assembly couples the first assembly and the second assembly. The first assembly and the second assembly can be selectively positioned between an open position and a closed position.

    摘要翻译: 本发明的实施例一般涉及具有固定衬底支撑件的蛤壳式和小容积室。 处理室的一个实施例包括具有基板接收表面的固定基板支撑件,围绕基板接收表面的周边设置的泵送环和设置在固定基板支撑件上方的气体分配组件。 泵送环形成泵送通道的至少一部分并且具有通过其形成的一个或多个孔。 腔室还可以包括设置在泵送环的孔的径向内侧的气流扩散器。 处理室的另一实施例包括包括固定衬底支撑件的第一组件和包括气体分配组件的第二组件。 第一组件包括第一组件主体,其形状和尺寸使得第一组件主体的至少一部分在衬底支撑件的衬底接收表面下方。 铰链组件联接第一组件和第二组件。 第一组件和第二组件可以选择性地定位在打开位置和关闭位置之间。

    Apparatus for wafer rinse and clean and edge etching
    65.
    发明授权
    Apparatus for wafer rinse and clean and edge etching 失效
    晶圆清洗和边缘蚀刻装置

    公开(公告)号:US06689418B2

    公开(公告)日:2004-02-10

    申请号:US09922130

    申请日:2001-08-03

    IPC分类号: B05D312

    摘要: An apparatus for and method of rinsing one side of a two-sided substrate and removing unwanted material from the substrate's edge and/or backside. One embodiment of the method is directed toward rinsing and cleaning a substrate having a front side upon which integrated circuits are to be formed and a backside. This embodiment includes dropping the substrate front side down onto a pool of rinsing liquid in a manner such that the front side of the substrate is in contact with the solution while the substrate is held in suspension by the surface tension of the solution liquid thereby preventing the backside of the substrate from sinking under an upper surface of the pool. Next, while the substrate is in suspension in said rinsing liquid, the substrate is secured by its edge with a first set of fingers and in some embodiments the substrate is subsequently spun. In another embodiment, a method of forming a copper layer on a front side of a substrate is disclosed. The method includes plating the copper layer over the front side of the substrate in a plating device and then transferring the substrate from the plating device to rinsing and cleaning station. At the rinsing and cleaning station, the substrate is dropped front side down onto a pool of rinsing liquid so that the surface tension of the liquid holds the substrate in suspension thereby preventing the backside of said substrate from sinking under an upper surface of the pool and then, while the substrate is suspended in the pool, it is secured with a first set of fingers.

    摘要翻译: 一种用于冲洗双面基板的一侧并从基板的边缘和/或背面去除不想要的材料的装置和方法。 该方法的一个实施例涉及冲洗和清洁具有正面的衬底,集成电路将在其上形成背面。 该实施例包括将衬底正面朝下放置到冲洗液池上,使得衬底的前侧与溶液接触,同时衬底被溶液的表面张力保持悬浮,从而防止了 衬底的背面从池的上表面下沉。 接下来,当衬底在所述漂洗液体中悬浮时,衬底通过其边缘用第一组手指固定,并且在一些实施例中,衬底随后被旋转。 在另一实施例中,公开了一种在衬底前侧形成铜层的方法。 该方法包括在电镀装置中在基板的正面上电镀铜层,然后将基板从电镀装置转移到冲洗和清洗台。 在冲洗和清洁站处,基板被正面向下落到冲洗液池上,使得液体的表面张力将基板保持在悬浮状态,从而防止所述基板的背面沉入池的上表面,并且 然后,当衬底悬挂在池中时,其用第一组手指固定。

    Method and apparatus for accurate placement of semiconductor wafers onto respective platforms within a single reaction chamber
    66.
    发明授权
    Method and apparatus for accurate placement of semiconductor wafers onto respective platforms within a single reaction chamber 失效
    将半导体晶片精确放置在单个反应室内的相应平台上的方法和装置

    公开(公告)号:US06430468B1

    公开(公告)日:2002-08-06

    申请号:US09716039

    申请日:2000-11-17

    IPC分类号: G06F700

    摘要: Method and apparatus are provided for accurately placing first and second semiconductor wafers onto a first and a second platforms, respectively, in a single processing chamber despite changes in the exact positions of the platforms caused by variations in temperature within the chamber. A computer controls a mechanism having a pair of wafer-supporting blades to insert the wafers into the chamber. The computer determines from position sensors when the first wafer is centered over the first platform, then actuates lift pins associated with the first platform to lift the first wafer off of its respective blade. Then the computer in the same way in response to other position sensors moves the second wafer into alignment with the second platform, and raises by lift pins the second wafer off of its respective blade. Thereafter the computer removes the blades from the chamber, and lowers the wafers in precise positions onto their respective platforms.

    摘要翻译: 提供了方法和装置,用于在第一和第二平台分别在单个处理室中精确地放置第一和第二半导体晶片,尽管由室内的温度变化导致的平台的精确位置的变化。 计算机控制具有一对晶片支撑刀片以将晶片插入腔室的机构。 当第一晶片在第一平台上居中时,计算机从位置传感器确定,然后致动与第一平台相关联的提升销,以将第一晶片从其相应的叶片提升。 然后以相同方式响应于其它位置传感器的计算机将第二晶片移动到与第二平台对准,并且通过提升销使第二晶片从其相应的刀片升高。 此后,计算机从腔室中移除刀片,并将晶片在精确位置下降到各自的平台上。

    Temperature controlled gas distribution plate
    67.
    发明授权
    Temperature controlled gas distribution plate 失效
    温控气体分布板

    公开(公告)号:US06379466B1

    公开(公告)日:2002-04-30

    申请号:US08238598

    申请日:1994-05-05

    IPC分类号: C23C1600

    摘要: The temperature controlled gas distribution plate of the present invention includes a liquid cooling passage, with inlet and outlet ports, that is formed within the gas distribution plate. In the preferred embodiment, the plate is formed with an upper passage cover and a lower base having a liquid passage channel formed within the side walls thereof. The cover and base are welded together to form a sealed liquid passage within the plate through which the liquid coolant flows.

    摘要翻译: 本发明的温度控制气体分配板包括形成在气体分配板内的具有入口和出口的液体冷却通道。 在优选实施例中,板形成有上通道盖和下基部,其具有形成在其侧壁内的液体通道通道。 盖和基座焊接在一起,以在液体冷却剂流过的板内形成密封的液体通道。

    Front end vacuum processing environment
    68.
    发明授权
    Front end vacuum processing environment 失效
    前端真空加工环境

    公开(公告)号:US6071055A

    公开(公告)日:2000-06-06

    申请号:US940850

    申请日:1997-09-30

    申请人: Avi Tepman

    发明人: Avi Tepman

    摘要: The present invention provides a wafer process system that incorporates a multiple wafer processing system, such as a tandem wafer processing system, and a front end staging apparatus. The front end staging apparatus includes a first transfer chamber in communication with a pair of loadlocks for introducing wafers into the system. A robot within the first transfer chamber moves individual wafers between the loadlocks, optional single wafer process chambers radially disposed about and in communication with the first transfer chamber, and a pair of intermediate staging chambers. The intermediate staging chambers communicate with both the first transfer chamber and a second transfer chamber of the tandem process system. A robot within the second transfer chamber moves the wafers, in tandem, between the intermediate staging chambers and tandem process chambers disposed about the periphery and communicating with the second transfer chamber.

    摘要翻译: 本发明提供一种结合了多晶片处理系统的晶片工艺系统,例如串联晶片处理系统和前端分段装置。 前端分段装置包括与用于将晶片引入系统的一对负载锁连通的第一传送室。 第一传送室内的机器人移动负载锁之间的单个晶片,径向设置在第一传送室周围并与第一传送室连通的可选单晶片处理室以及一对中间分级室。 中间分级室与串联过程系统的第一传送室和第二传送室两者连通。 第二传送室内的机器人一起移动晶片在中间分级室和围绕周边设置并与第二传送室连通的串联处理室之间。

    Apparatus for full wafer deposition

    公开(公告)号:US5951775A

    公开(公告)日:1999-09-14

    申请号:US461575

    申请日:1995-06-02

    申请人: Avi Tepman

    发明人: Avi Tepman

    摘要: A readily removable deposition shield for processing chambers such as chemical vapor deposition (CVD), ion implantation, or physical vapor deposition (PVD) or sputtering chambers, is disclosed. The deposition shield includes a shield of cylindrical configuration (or other configuration conformed to the internal shape of the substrate and the chamber) which is mounted to the chamber for easy removal, such as by screws, and defines a space along the periphery of the substrate support. A shield ring is inserted into the peripheral space and is thus mounted in removable fashion and is automatically centered about the substrate. The shield ring overlaps the cylindrical shield and the substrate support. Collectively, these components prevent deposition on the chamber and hardware outside the processing region. Also, the cylindrical shield and the shield ring may be removed as a unit. Locating means such as pins may be mounted or formed in the support about the periphery of the substrate for centering the substrate. Also, a peripheral groove may be formed in the substrate support peripheral to the substrate, for preventing material deposited on the support peripheral to the substrate from sticking to the substrate. The substrate is supported on spacers mounted on the substrate support; the resulting gap between the substrate and the support also prevents the material deposited on the support from bonding to the substrate. The result of the various features is an effective shield which allows long intervals before the shield must be removed for cleaning or replacement and which is easy to remove when necessary. In addition, the entire upper surface of the substrate is available for processing.

    Multiple edge deposition exclusion rings
    70.
    发明授权
    Multiple edge deposition exclusion rings 失效
    多边缘沉积排除环

    公开(公告)号:US5922133A

    公开(公告)日:1999-07-13

    申请号:US928995

    申请日:1997-09-12

    摘要: An exclusion ring system for depositing a film with multiple exclusion zones on a substrate in a deposition apparatus having a pedestal for supporting the substrate at different positions. A first exclusion ring is positioned above the substrate and pedestal and extends over a first zone overlying the perimeter of the substrate up to a first inner periphery. A second ring is positioned between the first ring and the substrate and extends over a second zone overlying the perimeter of the substrate outwardly of the first zone to a second inner periphery lying outwardly of the first inner periphery. When the pedestal is in a raised position, it supports the rings. When the pedestal is in a lowered position, the rings are supported by legs resting on a stationary wall, the legs of the first ring being effectively longer than the legs of the second ring so that the rings are sequentially moved away from the substrate as the pedestal is lowered. Initially, the first ring is in a position proximate the substrate to prevent deposition of the first film over the first zone. Then the pedestal is lowered to a position where the first ring is moved away from the substrate by its leg being supported. This leaves the second ring as an effective exclusion ring at the second position so that the second film is deposited over the first and over the second zone and also extends outwardly to cover and protect the edge of the first film.

    摘要翻译: 一种用于在具有用于在不同位置支撑衬底的基座的沉积设备中的衬底上沉积具有多个排除区域的膜的排除环系统。 第一排除环位于衬底和基座上方并且在覆盖衬底的周边的第一区域上延伸到第一内周边。 第二环定位在第一环和衬底之间并且在覆盖第一区域外部的衬底的周边上的第二区域上延伸到位于第一内周边外侧的第二内周边。 当基座处于升高位置时,它支撑环。 当基座处于降低位置时,环由搁置在固定壁上的腿支撑,第一环的腿比第二环的腿部有效地长,使得环从基底依次移动离开基底 底座下降。 最初,第一环位于靠近衬底的位置,以防止第一膜在第一区上沉积。 然后将基座下降到第一环被支撑的腿部从衬底移开的位置。 这使得第二环在第二位置处作为有效的排除环,使得第二膜沉积在第一和第二区上方并且还向外延伸以覆盖并保护第一膜的边缘。