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    Apparatus for wafer rinse and clean and edge etching
    1.
    发明授权
    Apparatus for wafer rinse and clean and edge etching 失效
    晶圆清洗和边缘蚀刻装置

    公开(公告)号：US06689418B2

    公开(公告)日：2004-02-10

    申请号：US09922130

    申请日：2001-08-03

    申请人： Donald J. K. Olgado ,  Avi Tepman ,  Yeuk-Fai Edwin Mok ,  Arnold V. Kholodenko

    发明人： Donald J. K. Olgado ,  Avi Tepman ,  Yeuk-Fai Edwin Mok ,  Arnold V. Kholodenko

    IPC分类号： B05D312

    CPC分类号： H01L21/68728 ,  B08B3/048 ,  C11D7/08 ,  C11D7/265 ,  C11D11/0047 ,  H01L21/67057

    摘要： An apparatus for and method of rinsing one side of a two-sided substrate and removing unwanted material from the substrate's edge and/or backside. One embodiment of the method is directed toward rinsing and cleaning a substrate having a front side upon which integrated circuits are to be formed and a backside. This embodiment includes dropping the substrate front side down onto a pool of rinsing liquid in a manner such that the front side of the substrate is in contact with the solution while the substrate is held in suspension by the surface tension of the solution liquid thereby preventing the backside of the substrate from sinking under an upper surface of the pool. Next, while the substrate is in suspension in said rinsing liquid, the substrate is secured by its edge with a first set of fingers and in some embodiments the substrate is subsequently spun. In another embodiment, a method of forming a copper layer on a front side of a substrate is disclosed. The method includes plating the copper layer over the front side of the substrate in a plating device and then transferring the substrate from the plating device to rinsing and cleaning station. At the rinsing and cleaning station, the substrate is dropped front side down onto a pool of rinsing liquid so that the surface tension of the liquid holds the substrate in suspension thereby preventing the backside of said substrate from sinking under an upper surface of the pool and then, while the substrate is suspended in the pool, it is secured with a first set of fingers.

    摘要翻译： 一种用于冲洗双面基板的一侧并从基板的边缘和/或背面去除不想要的材料的装置和方法。 该方法的一个实施例涉及冲洗和清洁具有正面的衬底，集成电路将在其上形成背面。 该实施例包括将衬底正面朝下放置到冲洗液池上，使得衬底的前侧与溶液接触，同时衬底被溶液的表面张力保持悬浮，从而防止了 衬底的背面从池的上表面下沉。 接下来，当衬底在所述漂洗液体中悬浮时，衬底通过其边缘用第一组手指固定，并且在一些实施例中，衬底随后被旋转。 在另一实施例中，公开了一种在衬底前侧形成铜层的方法。 该方法包括在电镀装置中在基板的正面上电镀铜层，然后将基板从电镀装置转移到冲洗和清洗台。 在冲洗和清洁站处，基板被正面向下落到冲洗液池上，使得液体的表面张力将基板保持在悬浮状态，从而防止所述基板的背面沉入池的上表面，并且 然后，当衬底悬挂在池中时，其用第一组手指固定。

    Electroless deposition apparatus
    2.
    发明授权
    Electroless deposition apparatus 有权

    公开(公告)号：US07138014B2

    公开(公告)日：2006-11-21

    申请号：US10059572

    申请日：2002-01-28

    申请人： Joseph J. Stevens ,  Dmitry Lubomirsky ,  Ian Pancham ,  Donald J. K. Olgado ,  Howard E. Grunes ,  Yeuk-Fai Edwin Mok

    发明人： Joseph J. Stevens ,  Dmitry Lubomirsky ,  Ian Pancham ,  Donald J. K. Olgado ,  Howard E. Grunes ,  Yeuk-Fai Edwin Mok

    IPC分类号： C23C14/00 ,  B05C11/00 ,  B05C3/00

    CPC分类号： H01L21/67126 ,  C23C18/1607 ,  C23C18/1619 ,  C23C18/1628 ,  C23C18/165 ,  C23C18/1653 ,  C23C18/1678 ,  C25D7/123 ,  C25D17/001

    摘要： An apparatus and a method of depositing a catalytic layer comprising at least one metal selected from the group consisting of noble metals, semi-noble metals, alloys thereof, and combinations thereof in sub-micron features formed on a substrate. Examples of noble metals include palladium and platinum. Examples of semi-noble metals include cobalt, nickel, and tungsten. The catalytic layer may be deposited by electroless deposition, electroplating, or chemical vapor deposition. In one embodiment, the catalytic layer may be deposited in the feature to act as a barrier layer to a subsequently deposited conductive material. In another embodiment, the catalytic layer may be deposited over a barrier layer. In yet another embodiment, the catalytic layer may be deposited over a seed layer deposited over the barrier layer to act as a “patch” of any discontinuities in the seed layer. Once the catalytic layer has been deposited, a conductive material, such as copper, may be deposited over the catalytic layer. In one embodiment, the conductive material is deposited over the catalytic layer by electroless deposition. In another embodiment, the conductive material is deposited over the catalytic layer by electroless deposition followed by electroplating or followed by chemical vapor deposition. In still another embodiment, the conductive material is deposited over the catalytic layer by electroplating or by chemical vapor deposition.

    Stable cell platform
    3.
    发明授权
    Stable cell platform 失效
    稳定的细胞平台

    公开(公告)号：US07114693B1

    公开(公告)日：2006-10-03

    申请号：US09676362

    申请日：2000-09-29

    申请人： Donald J. K. Olgado ,  Timothy J. Franklin ,  Avi Tepman

    发明人： Donald J. K. Olgado ,  Timothy J. Franklin ,  Avi Tepman

    IPC分类号： F16M13/00

    CPC分类号： H01L21/67126 ,  C25D7/12 ,  G05B2219/40351 ,  G05B2219/41457 ,  H01L21/2885 ,  H01L21/67051 ,  H01L21/67742 ,  H01L21/68707 ,  H05K3/241

    摘要： A stable platform supports a cell, the stable platform comprises a lower mainframe, an upper mainframe, and a dampener system. The upper mainframe includes a plurality of recesses. Each recess is configured to receive a cell. The dampener system connects the lower mainframe to the upper mainframe. In one embodiment, the dampener system comprises a dampener element, such as sand, to dampen vibrations between the lower mainframe and the lower mainframe.

    摘要翻译： 稳定的平台支持电池，稳定的平台包括下主机，上主机和减振器系统。 上主机包括多个凹槽。 每个凹槽被配置成接收单元。 阻尼器系统将下主机连接到上主机。 在一个实施例中，阻尼器系统包括阻尼器元件，例如沙子，以阻尼下主机和下主机之间的振动。

    System for planarizing metal conductive layers
    4.
    发明授权
    System for planarizing metal conductive layers 失效
    用于平坦化金属导电层的系统

    公开(公告)号：US06770565B2

    公开(公告)日：2004-08-03

    申请号：US10043561

    申请日：2002-01-08

    申请人： Donald J. K. Olgado ,  Avi Tepman ,  Dmitry Lubomirsky ,  Timothy R. Webb

    发明人： Donald J. K. Olgado ,  Avi Tepman ,  Dmitry Lubomirsky ,  Timothy R. Webb

    IPC分类号： H01L2302

    CPC分类号： H01L21/6708 ,  C23F1/18 ,  H01L21/32115 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/7684

    摘要： A method of planarizing a metal conductive layer on a substrate is provided. In one embodiment, a substrate having a metal conductive layer disposed on a top surface of the substrate is provided on a substrate support. The substrate support is rotated and the top surface of the substrate is contacted with a liquid etching composition. The metal conductive layer is then exposed to an etchant gas in order to planarize the top surface of the metal conductive layer. Also provided is an apparatus for etching a metal conductive layer on a substrate. The apparatus comprises a container, a substrate support disposed in the container, a rotation actuator attached to the substrate support, and a fluid delivery assembly disposed in the container.

    摘要翻译： 提供了在基板上平面化金属导电层的方法。 在一个实施例中，在衬底支架上设置具有设置在衬底顶表面上的金属导电层的衬底。 衬底支撑件旋转并且衬底的顶表面与液体蚀刻组合物接触。 然后将金属导电层暴露于蚀刻剂气体，以平坦化金属导电层的顶表面。 还提供了一种用于在基板上蚀刻金属导电层的装置。 该装置包括容器，设置在容器中的基板支撑件，附接到基板支撑件的旋转致动器以及设置在容器中的流体输送组件。

    Dual buffer chamber cluster tool for semiconductor wafer processing
    5.
    发明授权
    Dual buffer chamber cluster tool for semiconductor wafer processing 有权
    用于半导体晶圆处理的双缓冲室集群工具

    公开(公告)号：US06440261B1

    公开(公告)日：2002-08-27

    申请号：US09318233

    申请日：1999-05-25

    申请人： Avi Tepman ,  Donald J. K. Olgado ,  Allen L. D'Ambra

    发明人： Avi Tepman ,  Donald J. K. Olgado ,  Allen L. D'Ambra

    IPC分类号： H01L2100

    CPC分类号： H01L21/67161 ,  H01L21/67167 ,  H01L21/67184 ,  Y10S414/135 ,  Y10S414/137 ,  Y10S414/139

    摘要： Apparatus for multi-chambered semiconductor wafer processing comprising a polygonal structure having at least two semiconductor process chambers disposed on one side. An area between the process chambers provides a maintenance access to the semiconductor processing equipment. Additionally, the apparatus may be clustered or daisy-chained together to enable a wafer to access additional processing chambers without leaving the controlled environment of the semiconductor wafer processing equipment.

    摘要翻译： 用于多室半导体晶片处理的装置，包括具有设置在一侧上的至少两个半导体处理室的多边形结构。 处理室之间的区域提供对半导体处理设备的维护访问。 另外，该装置可以被集群或菊花链连接在一起，以使得晶片能够访问附加的处理室而不会离开半导体晶片处理设备的受控环境。

    Linear motion apparatus and associated method
    7.
    发明授权
    Linear motion apparatus and associated method 失效
    线性运动装置及相关方法

    公开(公告)号：US06662673B1

    公开(公告)日：2003-12-16

    申请号：US09684500

    申请日：2000-10-06

    申请人： Donald J. K. Olgado

    发明人： Donald J. K. Olgado

    IPC分类号： B25J1800

    CPC分类号： C25D7/123 ,  C25D17/001 ,  C25D21/00 ,  H01L21/2885 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/67126 ,  H01L21/6723 ,  H05K3/241 ,  Y10T29/49826 ,  Y10T74/20305

    摘要： A guide apparatus comprising a plurality of guide linkages. Each one of the plurality of guide linkages comprises a pair of linkage members, each pair of the linkage members are rotatably connected about a guide pivot axis. The guide pivot axis of each guide linkage is arranged in a direction opposed to the direction of the guide pivot axis of the remainder of the guide linkages. In one aspect, each guide linkage is arranged between a robot platform or a cassette and a base such that extending each of the plurality of guide linkages acts to linearly displace the robot platform relative to the base while limiting tilting of the robot platform or the cassette. In another aspect a robot can extend its end effectors while limiting tilting of the end effectors.

    摘要翻译： 一种引导装置，包括多个引导连杆。 多个引导连杆中的每一个包括一对连杆构件，每对连杆构件围绕导向枢转轴线可旋转地连接。 每个引导连杆的引导枢转轴线布置在与引导连杆的其余部分的引导枢转轴线的方向相反的方向上。 在一个方面，每个引导联动装置被布置在机器人平台或盒和基座之间，使得延伸多个引导连接件中的每个引导连杆起作用以使机器人平台相对于基座线性移位，同时限制机器人平台或盒的倾斜 。 在另一方面，机器人可以延伸其末端执行器，同时限制末端执行器的倾斜。

    Removable modular cell for electro-chemical plating and method
    8.
    发明授权
    Removable modular cell for electro-chemical plating and method 失效
    用于电化学电镀的可拆卸模块和方法

    公开(公告)号：US06557237B1

    公开(公告)日：2003-05-06

    申请号：US09663814

    申请日：2000-09-15

    申请人： Donald J. K. Olgado

    发明人： Donald J. K. Olgado

    IPC分类号： H01S400

    CPC分类号： H01L21/67167 ,  C25D7/123 ,  C25D17/001 ,  C25D17/004 ,  H01L21/2885 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/67126 ,  H01L21/6719 ,  H01L21/6723 ,  H05K3/241 ,  Y10T29/49002

    摘要： The present invention relates to a method and apparatus for depositing metal on a substrate. More particularly, one embodiment of the metal deposition cell comprising a cell base, an anode, and a cell top. The cell base at least partially defines an interior recess. The anode mounted within the interior recess to the cell base. The cell top is removably mounted to the cell base. In one embodiment, a method of removing a modular metal deposition cell from a deposition cell mount is provided. The modular metal deposition cell comprises a cell top and a cell bottom. The method comprises: unfastening a fastener that secures the cell top to the cell bottom, and also fastens the cell top and the cell bottom to the deposition cell mount. The cell top or the cell bottom are then removed from the deposition cell mount.

    摘要翻译： 本发明涉及一种在衬底上沉积金属的方法和装置。 更具体地，包括电池基底，阳极和电池顶部的金属沉积电池的一个实施例。 细胞基底至少部分地限定内部凹部。 阳极安装在内部凹槽内到达电池基座。 细胞顶部可拆卸地安装到细胞基底。 在一个实施例中，提供了从沉积电池座移除模块化金属沉积池的方法。 模块化金属沉积池包括电池顶部和电池底部。 该方法包括：松开将细胞顶部固定到细胞底部的紧固件，并且还将细胞顶部和细胞底部紧固到沉积细胞座。 然后将细胞顶部或细胞底部从沉积单元底座移除。