公开(公告)号：US20060070444A1

公开(公告)日：2006-04-06

申请号：US11244041

申请日：2005-10-06

申请人： Akio Nakamura

发明人： Akio Nakamura

IPC分类号： G01P15/12 ,  H01L21/60

CPC分类号： G01P15/123 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/16 ,  G01P2015/084 ,  H01L2224/05554 ,  H01L2224/45124 ,  H01L2224/48095 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/16152 ,  H01L2924/00

摘要： A semiconductor acceleration sensor in which a reduction in size can be achieved when electrodes are formed in a chip main body and acceleration can be measured with good sensitivity. The semiconductor acceleration sensor comprises a weight section, flexible sections which support the weight section and have measurement elements P, and a chip main body which has a front surface having chip electrodes electrically connected with the measurement elements, and support the flexible sections, wherein an additional weight, which has an inclined face which surrounds a bonding section and decreases its size toward the bonding section, is bonded on the front surface of the weight section.

摘要翻译： 一种半导体加速度传感器，其中当电极形成在芯片主体中时可以实现尺寸减小，并且可以以良好的灵敏度测量加速度。 半导体加速度传感器包括：重物部分，支撑重量部分的柔性部分并具有测量元件P;以及芯片主体，其具有与测量元件电连接的芯片电极的前表面，并且支撑柔性部分，其中 附加重量，其具有围绕结合部分并且朝向接合部分减小其尺寸的倾斜面接合在配重部分的前表面上。

公开(公告)号：US06982478B2

公开(公告)日：2006-01-03

申请号：US10615824

申请日：2003-07-10

申请人： Akio Nakamura

发明人： Akio Nakamura

IPC分类号： H01L23/495 ,  H01L23/02 ,  H01L23/48 ,  H01L23/29 ,  H01L23/04

CPC分类号： H01L25/50 ,  H01L21/6835 ,  H01L25/0657 ,  H01L2224/32145 ,  H01L2224/32188 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2225/0651 ,  H01L2225/06524 ,  H01L2225/06589 ,  H01L2924/14 ,  H01L2924/18165 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device comprises a semiconductor IC chip provided with bond pads on its first surface, a wiring substrate provided with a through hole extending between the opposite surfaces thereof, conductive members electrically connecting the bond pads of the semiconductor IC chip to the conductive lines formed on the wiring substrate respectively, and a sealing resin coating coating the first surface of the semiconductor IC chip and the conductive members, and bonding the side surface of the semiconductor IC chip to the side surface of the through hole of the wiring substrate.

摘要翻译： 半导体器件包括：半导体IC芯片，其在其第一表面上设置有接合焊盘;布线基板，设置有在其相对表面之间延伸的通孔;将半导体IC芯片的接合焊盘电连接到形成在 布线基板和涂覆半导体IC芯片的第一表面和导电部件的密封树脂涂层，并且将半导体IC芯片的侧表面接合到布线基板的通孔的侧表面。

公开(公告)号：US06960972B2

公开(公告)日：2005-11-01

申请号：US10151969

申请日：2002-05-22

申请人： Akio Nakamura ,  Yoshinori Kurata ,  Hirofumi Saso

发明人： Akio Nakamura ,  Yoshinori Kurata ,  Hirofumi Saso

IPC分类号： H01H9/12 ,  H01H45/04 ,  H01H45/10 ,  H01H50/02 ,  H01H50/04 ,  H01H50/10 ,  H01H50/18 ,  H01H51/22

CPC分类号： H01H50/10 ,  H01H9/12

摘要： A high-frequency relay comprises a body containing a contact unit having at least one contact terminal protruding from a bottom surface of the body, contact states switched according to energization of a coil and a base covering at least a bottom surface of the body. The contact unit is connected with at least one contact terminal. The base has a grounding function and includes a conductive layer.

摘要翻译： 高频继电器包括主体，其包含接触单元，该接触单元具有从主体的底面突出的至少一个接触端子，根据线圈的通电切换接触状态，至少覆盖至少底部的底面。 接触单元与至少一个接触端子连接。 基座具有接地功能，并包括导电层。

公开(公告)号：US20050038944A1

公开(公告)日：2005-02-17

申请号：US10912063

申请日：2004-08-06

申请人： Keita Harada ,  Shigemi Kurashima ,  Nobuyoshi Shimizu ,  Akio Nakamura ,  Yuriko Nishiyama ,  Shinichiro Akieda ,  Takashi Arita

发明人： Keita Harada ,  Shigemi Kurashima ,  Nobuyoshi Shimizu ,  Akio Nakamura ,  Yuriko Nishiyama ,  Shinichiro Akieda ,  Takashi Arita

IPC分类号： G06F3/041 ,  G06F3/01 ,  G06F3/033 ,  G06F13/00

CPC分类号： G06F3/016

摘要： A coordinates input device includes an operation unit that receives an operation input, a vibration generator that applies a vibration to the operation unit, and a vibration control unit that controls the vibration generator to apply the vibration to the operation unit when the operation input is received by the operation unit. The vibration generator includes a power feed unit provided to the operation unit, and a magnetic-field applying unit having sub-units. Each of the sub-units has first and second magnets spaced apart from each other with a given gap. The magnetic flux produced by the first and second magnets crosses a current flowing in the power feed unit.

摘要翻译： 坐标输入装置包括：接收操作输入的操作单元，向操作单元施加振动的振动发生器;以及振动控制单元，其在接收到操作输入时控制振动发生器将振动施加到操作单元 由操作单位。 振动发生器包括提供给操作单元的供电单元和具有子单元的磁场施加单元。 每个子单元具有彼此间隔开的给定间隙的第一和第二磁体。 由第一和第二磁体产生的磁通量与在馈电单元中流动的电流交叉。

公开(公告)号：US06797881B2

公开(公告)日：2004-09-28

申请号：US10725443

申请日：2003-12-03

申请人： Akio Nakamura

发明人： Akio Nakamura

IPC分类号： H05K506

CPC分类号： H01L23/49822 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01079 ,  H01L2924/181 ,  H01L2924/3025 ,  H05K1/0289 ,  H05K3/10 ,  H05K2201/0281 ,  H05K2201/029 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： A cross substrate and a method of mounting a semiconductor element are provided in which semiconductor elements can be mounted at a high density. Element side electrodes of a circuit forming surface of a semiconductor element and conductive filaments of a cross substrate are connected in a one-to-one correspondence by solder bumps. Thereafter, sealing is carried out by using a molten epoxy-based resin. In this way, a circuit forming surface side of the semiconductor element is sealed with sealing resin of the cross substrate, with the element side electrodes of the mounted semiconductor element electrically connected to conductive filaments which are wires of a cross substrate.

公开(公告)号：US06770543B2

公开(公告)日：2004-08-03

申请号：US09897090

申请日：2001-07-03

申请人： Akio Nakamura

发明人： Akio Nakamura

IPC分类号： H01L2146

CPC分类号： H01L23/3185 ,  H01L23/3178 ,  H01L29/0657 ,  H01L2224/05548 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2924/00013 ,  H01L2924/01078 ,  H01L2924/10157 ,  H01L2924/014 ,  H01L2224/13099

摘要： The sealing resin of a semiconductor device is prevented from being peeled off from the substrate of the semiconductor device. A semiconductor device according to the present invention has a semiconductor substrate containing a central portion having a first thickness and a peripheral portion having a second thickness that is smaller than the first thickness, an electrode pad formed on the semiconductor substrate, a sealing resin for sealing the semiconductor substrate, a protruded electrode formed on the sealing resin, and a wire which electrically connects the electrode pad to the protruded electrode.

公开(公告)号：US06590296B2

公开(公告)日：2003-07-08

申请号：US09956123

申请日：2001-09-20

申请人： Akio Nakamura

发明人： Akio Nakamura

IPC分类号： H01L2348

CPC分类号： H01L24/05 ,  H01L23/528 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/02166 ,  H01L2224/05093 ,  H01L2224/05552 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2224/06153 ,  H01L2224/45099 ,  H01L2224/4943 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device having electrodes formed along a peripheral part thereof in a staggered arrangement of lines including inside-line electrodes, central-line electrodes and outside-line electrodes. The inside-line electrodes are hexagonal shaped with hypotenuses on the central-line electrodes sides thereof. The central-line electrodes are hexagonal shaped with hypotenuses on the inside-line electrode sides thereof. The maximum width of the outside-line electrode wires immediately between the hypotenuses of adjacent inside-line and central-line electrodes depends on the distance between the centers of the inside-line and central-line electrodes, the minimum lengths of the inside-line and central-line electrodes and the electrode protective film, and the minimum length of the corresponding wire. The position and form of the central line electrodes are thus determinable based on the given relationship and the necessary value of current.

摘要翻译： 一种半导体器件，具有沿着其周边部分以包括线内电极，中心线电极和外线电极的交错布置的线形成的电极。 内线电极是六边形的，在其中心线电极侧具有斜边。 中心线电极是六边形的，在其内线电极侧具有斜边。 紧邻在相邻内线和中心线电极的斜边之间的外线电极线的最大宽度取决于内线和中心线电极的中心之间的距离，内线的最小长度 和中心线电极和电极保护膜，以及相应导线的最小长度。 因此，可以基于给定的关系和电流的必要值来确定中心线电极的位置和形式。

公开(公告)号：US5986333A

公开(公告)日：1999-11-16

申请号：US916445

申请日：1997-08-22

申请人： Akio Nakamura

发明人： Akio Nakamura

IPC分类号： H01L23/50 ,  H01L23/495

CPC分类号： H01L23/49503 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/181

摘要： A semiconductor apparatus includes a semiconductor chip and a die pad on which the semiconductor chip is mounted. The die pad is provided thereon with an opening. The semiconductor chip and the die pad may be shaped to be similar figures of rectangle, and the opening may include a plurality of first slits which are arranged around the corners of the die pad, respectively.

摘要翻译： 半导体装置包括半导体芯片和其上安装有半导体芯片的管芯焊盘。 芯片垫在其上设置有开口。 半导体芯片和裸片焊盘可以被成形为类似的矩形图案，并且开口可以分别包括围绕芯片焊盘的角部布置的多个第一狭缝。

公开(公告)号：US5851850A

公开(公告)日：1998-12-22

申请号：US516096

申请日：1995-08-17

申请人： Munehisa Yanagisawa ,  Susumu Higuchi ,  Yuuki Tamura ,  Akio Nakamura ,  Toshio Otaki

发明人： Munehisa Yanagisawa ,  Susumu Higuchi ,  Yuuki Tamura ,  Akio Nakamura ,  Toshio Otaki

IPC分类号： H01L33/00 ,  H01L33/02 ,  H01L21/00

CPC分类号： H01L33/025 ,  H01L33/0062

摘要： A semiconductor substrate for GaP type light emitting devices which includes an n-type single crystal substrate, an n-type GaP layer, and a p-type GaP layer formed on the n-type GaP single crystal substrate. The carbon concentration in the n-type GaP single crystal substrate is more than 1.0.times.10.sup.16 atoms/cc but less than 1.0.times.10.sup.17 atoms/cc. The n-type GaP single crystal substrate is obtained from an n-type GaP single crystal grown by the Liquid Encapsulation Czochralski method wherein B.sub.2 O.sub.3 containing water corresponding to 200 ppm or more is used as an encapsulation liquid.

摘要翻译： 一种用于GaP型发光器件的半导体衬底，其包括在n型GaP单晶衬底上形成的n型单晶衬底，n型GaP层和p型GaP层。 n型GaP单晶衬底中的碳浓度大于1.0×1016原子/ cc但小于1.0×10 17原子/ cc。 n型GaP单晶基板是通过使用液态封装法，其使用含有对应于200ppm以上的水的B 2 O 3作为封装液体的液体封装法，由n型GaP单晶获得。

公开(公告)号：US5643827A

公开(公告)日：1997-07-01

申请号：US358977

申请日：1994-12-19

申请人： Toshio Ootaki ,  Akio Nakamura ,  Yuuki Tamura ,  Munehisa Yanagisawa ,  Susumu Higuchi

发明人： Toshio Ootaki ,  Akio Nakamura ,  Yuuki Tamura ,  Munehisa Yanagisawa ,  Susumu Higuchi

IPC分类号： H01L33/02 ,  H01L33/12 ,  H01L33/30 ,  H01L21/20

CPC分类号： H01L33/305 ,  H01L33/025 ,  Y10S438/955

摘要： A GaP light emitting element substrate comprising an n-type GaP layer, a nitrogen-doped n-type GaP layer and a p-type GaP layer layered one after another on a multi-layer GaP substrate built by forming an n-type GaP buffer layer(s) on an n-type GaP single crystal substrate, wherein the sulfur (S) concentration in said n-type GaP buffer layer is made to be 5.times.10.sup.16 [atoms/cc] or less. The method of manufacturing it is as follows: an n-type GaP buffer layer(s) is formed on an n-type GaP single crystal substrate to prepare a multi-layer GaP substrate, then an n-type GaP layer, a nitrogen doped n-type GaP layer and a p-type GaP layer are layered on said multi-layer GaP substrate by means of the melt-back method to obtain a GaP light emitting element substrate, wherein the sulfur (S) concentration in said n-type GaP buffer layer is made to be 5.times.10.sup.16 [atoms/cc] or less when the multi-layer GaP substrate is prepared.

摘要翻译： 一种GaP发光元件基板，其包括在通过形成n型GaP缓冲器构成的多层GaP基板上依次层叠的n型GaP层，氮掺杂n型GaP层和p型GaP层 其中n型GaP缓冲层中的硫（S）浓度为5×10 16 [原子/ cc]以下。 其制造方法如下：在n型GaP单晶衬底上形成n型GaP缓冲层，以制备多层GaP衬底，然后将n型GaP层，氮掺杂 n型GaP层和p型GaP层通过熔融回归法层叠在所述多层GaP衬底上，以获得GaP发光元件衬底，其中所述n型GaP层中的硫（S）浓度 当制备多层GaP衬底时，GaP缓冲层为5×10 16 [原子/ cc]以下。