公开(公告)号：US20130138380A1

公开(公告)日：2013-05-30

申请号：US13731715

申请日：2012-12-31

Applicant: INTERMOLECULAR, INC.

Inventor： Guarav Verma ,  Tony P. Chiang ,  Imran Hashim ,  Sandra G. Malhotra ,  Prashant B. Phatak ,  Kurt H. Weiner

IPC: G01R31/28

CPC classification number: G01R31/2831 ,  G01R31/2834 ,  H01L22/34

Abstract: In embodiments of the current invention, methods of combinatorial processing and a test chip for use in these methods are described. These methods and test chips enable the efficient development of materials, processes, and process sequence integration schemes for semiconductor manufacturing processes. In general, the methods simplify the processing sequence of forming devices or partially formed devices on a test chip such that the devices can be tested immediately after formation. The immediate testing allows for the high throughput testing of varied materials, processes, or process sequences on the test chip. The test chip has multiple site isolated regions where each of the regions is varied from one another and the test chip is designed to enable high throughput testing of the different regions.

Abstract translation: 在本发明的实施例中，描述了用于这些方法的组合处理方法和测试芯片。 这些方法和测试芯片能够有效地开发用于半导体制造工艺的材料，工艺和工艺顺序集成方案。 通常，这些方法简化了在测试芯片上形成器件或部分形成的器件的处理顺序，使得器件可以在形成后立即进行测试。 即时测试允许测试芯片上各种材料，工艺或工艺顺序的高通量测试。 测试芯片具有多个位置隔离区域，其中每个区域彼此变化，并且测试芯片被设计为能够实现不同区域的高通量测试。

公开(公告)号：US20130071982A1

公开(公告)日：2013-03-21

申请号：US13675695

申请日：2012-11-13

Applicant: Intermolecular, Inc.

Inventor： Nitin Kumar ,  Tony P. Chiang ,  Chi-I Lang ,  Prashant B. Phatak ,  Jinhong Tong

IPC: H01L45/00

CPC classification number: G11C13/0007 ,  G11C2213/32 ,  G11C2213/52 ,  G11C2213/72 ,  G11C2213/73 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1608

Abstract: Nonvolatile memory elements are provided that have resistive switching metal oxides. The nonvolatile memory elements may be formed by depositing a metal-containing material on a silicon-containing material. The metal-containing material may be oxidized to form a resistive-switching metal oxide. The silicon in the silicon-containing material reacts with the metal in the metal-containing material when heat is applied. This forms a metal silicide lower electrode for the nonvolatile memory element. An upper electrode may be deposited on top of the metal oxide. Because the silicon in the silicon-containing layer reacts with some of the metal in the metal-containing layer, the resistive-switching metal oxide that is formed is metal deficient when compared to a stoichiometric metal oxide formed from the same metal.

Abstract translation: 提供具有电阻开关金属氧化物的非易失性存储元件。 非易失性存储元件可以通过将含金属的材料沉积在含硅材料上而形成。 含金属材料可以被氧化以形成电阻式开关金属氧化物。 当施加热量时，含硅材料中的硅与含金属材料中的金属反应。 这形成用于非易失性存储元件的金属硅化物下电极。 上部电极可以沉积在金属氧化物的顶部。 由于含硅层中的硅与含金属层中的一些金属反应，与由相同金属形成的化学计量的金属氧化物相比，形成的电阻 - 开关金属氧化物是金属缺陷的。

公开(公告)号：US20160149129A1

公开(公告)日：2016-05-26

申请号：US14553632

申请日：2014-11-25

Applicant: Intermolecular, Inc.

Inventor： Ashish Bodke ,  Mark Clark ,  Kevin Kashefi ,  Prashant B. Phatak ,  Dipankar Pramanik

IPC: H01L45/00

CPC classification number: H01L45/145 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The metal layer of the selector element can include conductive materials such as metal silicides, and metal silicon nitrides. Conductive materials of the MSM may include tantalum silicide, tantalum silicon nitride, titanium silicide, titanium silicon nitride, or combinations thereof.

Abstract translation: 公开了适用于非易失性存储器件应用的选择元件。 选择器元件在低电压下可以具有低泄漏电流，以减少非选定器件的潜行电流路径，以及在较高电压下更高的漏电流，以最大限度地减少器件切换期间的电压降。 选择器元件可以基于多层膜堆叠（例如金属 - 半导体 - 金属（MSM）堆叠）。 选择元件的金属层可以包括诸如金属硅化物的导电材料和金属硅氮化物。 MSM的导电材料可以包括硅化钽，氮化钽，硅化钛，氮化钛或其组合。

公开(公告)号：US20160149128A1

公开(公告)日：2016-05-26

申请号：US14553443

申请日：2014-11-25

Applicant: Intermolecular, Inc.

Inventor： Ashish Bodke ,  Mark Clark ,  Kevin Kashefi ,  Prashant B. Phatak

IPC: H01L45/00

CPC classification number: H01L45/1286 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/14 ,  H01L45/145 ,  H01L45/146 ,  H01L45/149

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). A structure including diamond-like carbon (DLC) can be used to surround the semiconductor layer of the MSM stack. The high thermal conductivity of the DLC structure may serve to remove heat from the selector device while higher currents are flowing through the selector element. This may lead to improved reliability and improved endurance.

Abstract translation: 公开了适用于非易失性存储器件应用的选择元件。 选择器元件在低电压下可以具有低泄漏电流，以减少非选定器件的潜行电流路径，以及在较高电压下更高的漏电流，以最大限度地减少器件切换期间的电压降。 选择器元件可以基于多层膜堆叠（例如金属 - 半导体 - 金属（MSM）堆叠）。 可以使用包括类金刚石碳（DLC）的结构来围绕MSM堆叠的半导体层。 DLC结构的高热导率可用于在较高的电流流过选择器元件时从选择器装置移除热量。 这可能导致改进的可靠性和耐久性。

公开(公告)号：US20160148976A1

公开(公告)日：2016-05-26

申请号：US14554388

申请日：2014-11-26

Applicant: Intermolecular, Inc.

Inventor： Ashish Bodke ,  Mark Clark ,  Kevin Kashefi ,  Prashant B. Phatak ,  Dipankar Pramanik

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2409 ,  H01L45/08 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/14 ,  H01L45/145 ,  H01L45/149

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on a silicon semiconductor layer doped with both carbon and nitrogen. The metal layer of the selector element can include conductive materials such as carbon, tungsten, titanium nitride, or combinations thereof.

Abstract translation: 公开了适用于非易失性存储器件应用的选择元件。 选择器元件在低电压下可以具有低泄漏电流，以减少非选定器件的潜行电流路径，以及在较高电压下更高的漏电流，以最大限度地减少器件切换期间的电压降。 选择器元件可以基于掺杂有碳和氮的硅半导体层。 选择元件的金属层可以包括诸如碳，钨，氮化钛或其组合的导电材料。

公开(公告)号：US20160141335A1

公开(公告)日：2016-05-19

申请号：US14546678

申请日：2014-11-18

Applicant: Intermolecular, Inc.

Inventor： Ashish Bodke ,  Mark Clark ,  Kevin Kashefi ,  Prashant B. Phatak

IPC: H01L27/24 ,  H01L29/165 ,  H01L29/06 ,  H01L29/45 ,  H01L29/417 ,  H01L29/16 ,  H01L29/861

CPC classification number: H01L27/2409 ,  G11C11/1659 ,  G11C13/003 ,  G11C2213/76 ,  H01L27/222 ,  H01L45/04 ,  H01L45/06 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can be based on multilayer film stacks (e.g. metal-semiconductor-metal (MSM) stacks). The semiconductor layer of the selector element can include a trilayer stack of diamond like carbon/silicon/diamond like carbon. Conductive materials of the MSM may include tungsten, titanium nitride, carbon, or a combination thereof.

Abstract translation: 公开了适用于非易失性存储器件应用的选择元件。 选择器元件在低电压下可以具有低泄漏电流，以减少非选定器件的潜行电流路径，以及在较高电压下更高的漏电流，以最大限度地减少器件切换期间的电压降。 选择器元件可以基于多层膜堆叠（例如金属 - 半导体 - 金属（MSM）堆叠）。 选择器元件的半导体层可以包括诸如碳/硅/金刚石的类似碳的类金刚石叠层。 MSM的导电材料可以包括钨，氮化钛，碳或它们的组合。

公开(公告)号：US09246092B1

公开(公告)日：2016-01-26

申请号：US14554458

申请日：2014-11-26

Applicant: Intermolecular, Inc.

Inventor： Ashish Bodke ,  Mark Clark ,  Kevin Kashefi ,  Prashant B. Phatak ,  Dipankar Pramanik

IPC: H01L27/148 ,  H01L29/768 ,  H01L45/00

CPC classification number: H01L45/00 ,  H01L27/2409 ,  H01L27/2418 ,  H01L45/08 ,  H01L45/1233

Abstract: Selector elements that can be suitable for nonvolatile memory device applications are disclosed. The selector element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and higher leakage currents at higher voltages to minimize voltage drops during device switching. The selector element can include insulator layers between the semiconductor layer and the metal layers to lower the leakage current of the device. The metal layers of the selector element can include conductive materials such as tungsten, titanium nitride, or combinations thereof.

Abstract translation: 公开了适用于非易失性存储器件应用的选择元件。 选择器元件在低电压下可以具有低泄漏电流，以减少非选定器件的潜行电流路径，以及在较高电压下更高的漏电流，以最大限度地减少器件切换期间的电压降。 选择器元件可以包括半导体层和金属层之间的绝缘体层，以降低器件的漏电流。 选择元件的金属层可以包括诸如钨，氮化钛或其组合的导电材料。

公开(公告)号：US09177998B2

公开(公告)日：2015-11-03

申请号：US14491080

申请日：2014-09-19

Applicant: Intermolecular, Inc.

Inventor： Venkat Ananthan ,  Imran Hashim ,  Prashant B. Phatak

IPC: H01L27/24 ,  H01L49/02 ,  H01L45/00

CPC classification number: H01L27/2418 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L28/40 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1633

Abstract: MIMCAP devices are provided that can be suitable for memory device applications, such as current selector devices for cross point memory array. The MIMCAP devices can have lower thermal budget as compared to Schottky diodes and controllable lower barrier height and lower series resistance as compared to MIMCAP tunneling diodes. The MIMCAP diode can include a low defect dielectric layer, a high defect dielectric layer, sandwiched between two electrodes having different work function values.

Abstract translation: 提供了可适用于存储器件应用的MIMCAP器件，例如用于交叉点存储器阵列的电流选择器装置。 与MIMCAP隧道二极管相比，MIMCAP器件与肖特基二极管相比可以具有更低的热量预算，并且可控制的较低势垒高度和较低的串联电阻。 MIMCAP二极管可以包括夹在具有不同功函数值的两个电极之间的低缺陷电介质层，高缺陷电介质层。

公开(公告)号：US09013913B2

公开(公告)日：2015-04-21

申请号：US14276229

申请日：2014-05-13

Applicant: Intermolecular, Inc.

Inventor： Yun Wang ,  Tony P. Chiang ,  Prashant B. Phatak

IPC: G11C13/00 ,  G11C11/00 ,  G11C7/00 ,  G11C17/06 ,  G11C5/02 ,  G11C5/06 ,  G11C13/02 ,  G11C11/36 ,  G11C13/04

CPC classification number: G11C13/02 ,  G11C7/00 ,  G11C11/36 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0021 ,  G11C13/0069 ,  G11C13/04 ,  G11C2013/0073 ,  G11C2013/0092 ,  G11C2213/72

Abstract: According to various embodiments, a resistive-switching memory element and memory element array that uses a bipolar switching includes a select element comprising only a single diode that is not a Zener diode. The resistive-switching memory elements described herein can switch even when a switching voltage less than the breakdown voltage of the diode is applied in the reverse-bias direction of the diode. The memory elements are able to switch during the very brief period when a transient pulse voltage is visible to the memory element, and therefore can use a single diode per memory cell.

Abstract translation: 根据各种实施例，使用双极开关的电阻式开关存储器元件和存储元件阵列包括仅包括不是齐纳二极管的单个二极管的选择元件。 即使当在二极管的反向偏置方向上施加小于二极管的击穿电压的开关电压时，本文所述的电阻式开关存储元件也可以切换。 存储器元件能够在瞬态脉冲电压对存储元件可见时的非常短的时间内进行切换，因此每个存储单元可以使用单个二极管。

公开(公告)号：US08975610B1

公开(公告)日：2015-03-10

申请号：US14138823

申请日：2013-12-23

Applicant: Intermolecular, Inc.

Inventor： Monica Sawkar Mathur ,  Prashant B. Phatak

IPC: H01L29/02 ,  H01L45/00

CPC classification number: H01L27/2409 ,  H01L27/2418 ,  H01L27/2463 ,  H01L45/00 ,  H01L45/08

Abstract: Control elements that can be suitable for nonvolatile memory device applications are disclosed. The control element can have low leakage currents at low voltages to reduce sneak current paths for non-selected devices, and high leakage currents at high voltages to minimize voltage drops during device switching. The control element can be based on multilayer dielectric stacks. The control element can include a titanium oxide-silicon-titanium oxide multilayer stack. Electrode materials may include one of ruthenium, titanium nitride, or carbon. The control element can include a silicon nitride-silicon-silicon nitride multilayer stack. Electrode materials may include titanium nitride.

Abstract translation: 公开了可适用于非易失性存储器件应用的控制元件。 控制元件在低电压下可以具有低泄漏电流，以减少非选定器件的潜行电流路径，以及高电压下的高泄漏电流，以最大限度地减少器件切换期间的电压降。 控制元件可以基于多层介质堆叠。 控制元件可以包括氧化钛 - 硅 - 氧化钛多层叠层。 电极材料可以包括钌，氮化钛或碳中的一种。 控制元件可以包括氮化硅 - 硅 - 氮化硅多层叠层。 电极材料可以包括氮化钛。