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公开(公告)号：US12106969B2
公开(公告)日：2024-10-01
申请号：US17205037
申请日：2021-03-18
Applicant: International Business Machines Corporation
Inventor： Ruilong Xie , Balasubramanian Pranatharthiharan , Mukta Ghate Farooq , Julien Frougier , Takeshi Nogami , Roy R. Yu , Kangguo Cheng
IPC: H01L21/306 , H01L21/762 , H01L21/768 , H01L23/528
CPC classification number: H01L21/30625 , H01L21/76224 , H01L21/76816 , H01L23/5286
Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a first recess partially through a substrate from a first side of the substrate, forming a dielectric layer in the first recess, forming a second recess partially through the dielectric layer from the first side of the substrate, and forming a buried power rail (BPR) in the second recess of the dielectric layer. The method also includes thinning the substrate from a second side of the substrate to a level of the dielectric layer, the second side of the substrate being opposite to the first side of the substrate.
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公开(公告)号：US20240222313A1
公开(公告)日：2024-07-04
申请号：US18089732
申请日：2022-12-28
Applicant: International Business Machines Corporation
Inventor： Roy R. Yu , Katsuyuki Sakuma
IPC: H01L23/00 , H01L21/683 , H01L21/78
CPC classification number: H01L24/80 , H01L21/6838 , H01L21/78 , H01L2224/80011 , H01L2224/80013 , H01L2224/80019 , H01L2224/80201 , H01L2224/80895 , H01L2224/80896 , H01L2224/80948
Abstract: An apparatus for bonding a first substrate to a second substrate includes a heatable mounting stage configured to accommodate a first semiconductor substrate on an upward-facing surface and a first stack of semiconductor materials on the first semiconductor substrate; a heatable bond head configured to accommodate a second semiconductor substrate on a downward-facing surface and a second stack of semiconductor materials on the second semiconductor substrate; and a collet disposed on the downward-facing surface of the heatable bond head and configured to receive the second semiconductor substrate and the second stack of semiconductor materials. The heatable bond head is configured to have a vacuum applied thereto to deformably accommodate the second semiconductor substrate and the second stack of semiconductor materials against the collet. The heatable bond head is configured to be pressed against the heatable mounting stage to bond the semiconductor materials.
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63.发明授权公开(公告)号：US11562907B2
公开(公告)日：2023-01-24
申请号：US16204438
申请日：2018-11-29
Applicant: International Business Machines Corporation
Inventor： Cristina Camagong , Hariklia Deligianni , Damon B. Farmer , Andrei Fustochenko , Ying He , Emily R. Kinser , Yu Luo , Roy R. Yu
Abstract: A method for forming a nanostructure includes coating an exposed surface of a base layer with a patterning layer. The method further includes forming a pattern in the patterning layer including nano-patterned non-random openings, such that a bottom portion of the non-random openings provides direct access to the exposed surface of the base layer. The method also includes depositing a material in the non-random openings in the patterning layer, such that the material contacts the exposed surface to produce repeating individually articulated nano-scale features. The method includes removing remaining portions of the patterning layer. The method further includes forming an encapsulation layer on exposed surfaces of the repeating individually articulated nanoscale features and the exposed surface of the base layer.
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公开(公告)号：US20220399224A1
公开(公告)日：2022-12-15
申请号：US17342650
申请日：2021-06-09
Applicant: International Business Machines Corporation
Inventor： Ruilong Xie , Takeshi Nogami , Roy R. Yu , Balasubramanian Pranatharthiharan , Albert M. Young , Kisik Choi , Brent Anderson
IPC: H01L21/74 , H01L21/768 , H01L23/535 , H01L23/528
Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a first trench partially through a first substrate from a first side of the first substrate. The method also includes widening a bottom portion of the first trench to form a lateral footing area of the first trench. The method includes forming a first metallization in the first trench; forming a second trench through a second substrate from a second side of the second substrate to expose at least a portion of first metallization in an area corresponding to the lateral footing area of the first trench, the second side being opposite to the first side. The method also includes forming a second metallization in the second trench in contact with the first metallization.
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公开(公告)号：US11370004B2
公开(公告)日：2022-06-28
申请号：US16695321
申请日：2019-11-26
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Steven J. Holmes , Emily R. Kinser , Qinghuang Lin , Nathan P. Marchack , Roy R. Yu
Abstract: A biosensor includes an array of metal nanorods formed on a substrate. An electropolymerized conductor is formed over tops of a portion of the nanorods to form a reservoir between the electropolymerized conductor and the substrate. The electropolymerized conductor includes pores that open and close responsively to electrical signals applied to the nanorods. A dispensing material is loaded in the reservoir to be dispersed in accordance with open pores.
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Patent Agency Ranking
公开(公告)号：US11311234B2
公开(公告)日：2022-04-26
申请号：US15808137
申请日：2017-11-09
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Hariklia Deligianni , Bruce B. Doris , Steven J. Holmes , Emily R. Kinser , Qinghuang Lin , Roy R. Yu
Abstract: A sensing and treatment device includes an array of metal nanorod electrodes formed on a substrate, the array including first electrodes for sensing, and second electrodes for electrical pulsation. A data processing system is configured to monitor a parameter using the first electrodes and to activate the electrical pulsation in the second electrodes in accordance with a reading of the parameter.
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公开(公告)号：US10918852B2
公开(公告)日：2021-02-16
申请号：US16573644
申请日：2019-09-17
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Steven J. Holmes , Qinghuang Lin , Emily R. Kinser , Nathan P. Marchack , Roy R. Yu
Abstract: A nanodevice includes an array of metal nanorods formed on a substrate. An electropolymerized electrical conductor is formed over tops of a portion of the nanorods to form a reservoir between the electropolymerized conductor and the substrate. The electropolymerized conductor includes pores that open or close responsively to electrical signals applied to the nanorods. A cell loading region is disposed in proximity of the reservoir, and the cell loading region is configured to receive stem cells. A neurotrophic dispensing material is loaded in the reservoir to be dispersed in accordance with open pores to affect growth of the stem cells when in vivo.
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公开(公告)号：US10814046B2
公开(公告)日：2020-10-27
申请号：US15927443
申请日：2018-03-21
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Stacey M. Gifford , Huan Hu , Emily R. Kinser , Roy R. Yu , Sufi Zafar
IPC: A61L31/16 , B81C1/00 , A61L27/06 , A61L27/30 , A61L27/50 , A61L27/34 , A61L31/06 , A61L31/08 , A61L31/10 , B82B3/00
Abstract: Aspects include methods of fabricating antibacterial surfaces for medical implant devices including patterning a photoresist layer on a silicon substrate and etching the silicon to generate a plurality of nanopillars. Aspects also include removing the photoresist layer from the structure and coating the plurality of nanopillars with a biocompatible film. Aspects also include a system for preventing bacterial infection associated with medical implants including a thin silicon film including a plurality of nanopillars.
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公开(公告)号：US10767084B2
公开(公告)日：2020-09-08
申请号：US16004028
申请日：2018-06-08
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , James L. Hedrick , Robert Dennis Miller , Deborah Ann Neumayer , Sampath Purushothaman , Mary E. Rothwell , Willi Volksen , Roy R. Yu
Inventor： James L. Hedrick , Robert Dennis Miller , Deborah Ann Neumayer , Sampath Purushothaman , Mary E. Rothwell , Willi Volksen , Roy R. Yu
IPC: C09J9/00 , B32B17/00 , C09J179/08 , C09J11/04 , H01L23/16 , B32B33/00 , C09J11/06 , C09J179/04 , C09J183/04 , H01L23/00 , H01L25/065 , H01L25/00 , H01L21/768 , H01L21/683 , H01L23/60 , H01L23/48 , B82Y30/00 , B82Y40/00 , C08K5/544 , C08K5/548 , C08K5/5425 , C08K5/5465 , C08K7/24 , C08K3/04
Abstract: The present invention related to CNT filled polymer composite system possessing a high thermal conductivity and high temperature stability so that it is a highly thermally conductive for use in 3D and 4D integration for joining device sub-laminate layers. The CNT/polymer composite also has a CTE close to that of Si, enabling a reduced wafer structural warping during high temperature processing cycling. The composition is tailored to be suitable for coating, curing and patterning by means conventionally known in the art.
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70.发明申请公开(公告)号：US20200170523A1
公开(公告)日：2020-06-04
申请号：US16204607
申请日：2018-11-29
Inventor： Hariklia Deligianni , Jason Gerrard , Emily R. Kinser , Themis R. Kyriakides , Dennis D. Spencer , Roy R. Yu , Hitten Zaveri
Abstract: A structure for monitoring and stimulation includes an external power supply unit. The structure also includes an internal hub communicatively coupled to the external power supply unit. The structure further includes a plurality of sensor modules communicatively coupled to the internal hub by a plurality of flexible interconnects. The plurality of sensor modules include three-dimensional (3D) comb sensor devices.
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