摘要:
A projection objective has at least five lens groups (G1 to G5) and has several lens surfaces. At least two aspheric lens surfaces are arranged so as to be mutually adjacent. These mutually adjacently arranged lens surfaces are characterized as a double asphere. This at least one double asphere (21) is mounted at a minimum distance from an image plane (0′) which is greater than the maximum lens diameter (D2) of the objective.
摘要:
An illumination system for scannertype microlithography along a scanning direction with a light source emitting a wavelength especially ≦193 nm. The illumination system includes a plurality of raster elements. The plurality of raster elements is imaged into an image plane of the illumination system to produce a plurality of images being partially superimposed on a field in the image plane. The field defines a non-rectangular intensity profile in the scanning direction.
摘要:
In a facet mirror with a number of mirror facets, wherein the mirror facets are provided with reflecting surfaces, the mirror facets are mounted jointly in a basic body via bearing devices. The mirror facets comprise mirror bodies contacting at the periphery with the bearing devices via a surface, line or point contact. The preferred field of use of the facet mirrors is a projection objective of a projection exposure machine in microlithography for fabricating semiconductor elements.
摘要:
An illumination system of a microlithographic projection exposure apparatus contains a light mixer for the homogenization of radiation distributions. The latter may, in one embodiment, comprise at least one plane beam-splitter layer which is arranged between two transparent sub-elements, parallel to an optical axis of the illumination system. An alternative embodiment of a light mixer contains at least one row of beam splitters, wherein the beam splitters in at least one row are arranged mutually parallel, at an inclination angle with respect to an entry-side optical axis of the illumination system, and offset behind one another in a direction perpendicular to the entry-side optical axis.
摘要:
There is provided an attenuator for attenuating electromagnetic radiation of wavelengths unequal to a used wavelength, including a grating element, having i) grating grooves that produce a grating period (p), and ii) a grating plane. The grating period (p) is at least about 150 times higher than the used wavelength.
摘要:
There is provided an illumination system. The illumination system includes a source for light having a wavelength ≦193 nm, a field plane, and a collector having a mirror shell for receiving a part of the light. The mirror shell is arranged so that a real image of the source is formed and comes to lie in a plane that is defocused relative to the field plane by more than 30 mm, so that the field plane is illuminated in a predetermined region, substantially homogeneously.
摘要:
There is provided a multi-mirror system for an illumination system with wavelengths ≦193 nm. The multi-mirror system includes (a) an imaging system having a first mirror and a second mirror, (b) an object plane, (c) an image plane in which the imaging system forms an image of an object, and (d) an arc-shaped field in the image plane, where a radial direction in a middle of the arc-shaped field defines a scanning direction. The first and second mirrors are arranged such that an edge sharpness of the arc-shaped field is smaller than 5 mm in the scanning direction. Rays traveling from the object plane to the image plane impinge a used area of the first and second mirrors with incidence angles relative to a surface normal of the mirrors ≦30° or ≧60°.
摘要:
There is provided an illumination system. The illumination system includes a source of light having a wavelength of less than or equal to about 193 nm, a first facet, a second facet, and a reflective element. The light is incident on the first facet via a first path, propagates from the first facet to the second facet via a second path, and propagates from the second facet to the reflective element via a third path. The second path and the third path are in substantially opposite directions from one another and substantially parallel to each other.
摘要:
An illumination system comprises (a) a first optical element upon which a light beam impinges, where the first optical element has first raster elements that partition said light beam into light channels; (b) a second optical element that receives said light channels, where the second optical element has a second raster elements; (c) an object plane that receives said light channels via said second optical element; and (d) an exit pupil that is provided with an illumination via said object plane. The system is characterized by an assignment of a member of said first raster elements and a member of said second raster elements to each of said light channels to provide a continuous beam path from said first optical element to said object plane for each of said plurality of light channels. The assignment is changeable to provide an adjustment of said illumination in said exit pupil.
摘要:
An EUV lithography device including an illumination device for illuminating a mask at an illumination position in the EUV lithography device and a projection device for imaging a structure provided on the mask onto a light-sensitive substrate. The EUV lithography device has a processing device (15) for processing an optical element (6a), in particular the mask, preferably in a locally resolved manner, at a processing position in the EUV lithography device. For activating at least one gas component of the gas stream (27), the processing device (15) includes a particle generator (30) for generating a particle beam, in particular an electron beam (30a), and/or a high-frequency generator.