公开(公告)号：US08093601B2

公开(公告)日：2012-01-10

申请号：US12442870

申请日：2007-09-25

申请人： Tadayoshi Miyamoto ,  Mitsuhiro Tanaka

发明人： Tadayoshi Miyamoto ,  Mitsuhiro Tanaka

IPC分类号： H01L31/00 ,  H01L29/04

CPC分类号： H01L27/124 ,  G02F1/136204

摘要： In an active matrix substrate (100) of the present invention, a gate bus line (105) and a gate electrode (166) extend in the first direction (the x direction). At a contact portion (168) for electrically connecting the gate bus line (105) with the drain regions of a first-conductivity-type transistor section (162) and a second-conductivity-type transistor section (164), the direction of the straight line (L1) of the shortest distance (d1) between one of a plurality of first-conductivity-type drain connecting portions (168c) that is closest to the gate bus line (105) and the gate bus line (105) is inclined with respect to the second direction (the y direction).

摘要翻译： 在本发明的有源矩阵基板（100）中，栅极总线（105）和栅电极（166）沿第一方向（x方向）延伸。 在用于将栅极总线（105）与第一导电型晶体管部分（162）和第二导电型晶体管部分（164）的漏极区域电连接的接触部分（168）处， 与栅极总线（105）最接近的多个第一导电型漏极连接部（168c）中的一个与栅极总线（105）之间的最短距离（d1）的直线（L1）倾斜 相对于第二方向（y方向）。

公开(公告)号：US20110049571A1

公开(公告)日：2011-03-03

申请号：US12855744

申请日：2010-08-13

申请人： Makoto MIYOSHI ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

发明人： Makoto MIYOSHI ,  Yoshitaka Kuraoka ,  Shigeaki Sumiya ,  Mikiya Ichimura ,  Tomohiko Sugiyama ,  Mitsuhiro Tanaka

IPC分类号： H01L29/78 ,  H01L29/205 ,  H01L21/20

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/66462

摘要： Provided is an epitaxial substrate capable of achieving a semiconductor device that has excellent schottky contact characteristics as well as satisfactory device characteristics. On a base substrate, a channel layer formed of a first group III nitride that contains at least Al and Ga and has a composition of Inx1Aly1Gaz1N (x1+y1+z1=1) is formed. On the channel layer, a barrier layer formed of a second group III nitride that contains at least In and Al and has a composition of Inx2Aly2Gaz2N (x2+y2+z2=1) is formed such that an In composition ratio of a near-surface portion is smaller than an In composition ratio of a portion other than the near-surface portion.

摘要翻译： 提供了能够实现具有优异的肖特基接触特性以及令人满意的器件特性的半导体器件的外延衬底。 在基底基板上，形成由至少含有Al和Ga的第一III族氮化物形成的沟道层，并且具有Inx1Aly1Gaz1N（x1 + y1 + z1 = 1）的组成。 在沟道层上，形成由至少包含In和Al并且具有In x2 Al y2 Ga z2 N（x2 + y2 + z2 = 1）的组成的第二III族氮化物形成的阻挡层，使得近表面的In组成比 部分比除了近表面部分之外的部分的In组成比小。

公开(公告)号：US20090058411A1

公开(公告)日：2009-03-05

申请号：US12193851

申请日：2008-08-19

申请人： Makoto Miyoshi ,  Mitsuhiro Tanaka

发明人： Makoto Miyoshi ,  Mitsuhiro Tanaka

IPC分类号： G01R33/07

CPC分类号： G01R33/07

摘要： An aspect of the present invention provides a magnetic sensor which is operated better at a high temperature range not lower than 300° C. compared with a conventional magnetic sensor. A operating layer having a heterojunction interface is formed by laminating a first layer made of GaN whose electron concentration is not more than 1×1016/cm3 at room temperature and a second layer made of AlxGa1-xN (0

摘要翻译： 本发明的一个方面提供一种磁传感器，其与传统的磁传感器相比在不低于300℃的高温范围内更好地运行。 具有异质结界面的工作层通过在室温下层叠电子浓度不大于1×1016 / cm 3的GaN的第一层和由Al x Ga 1-x N（0

公开(公告)号：US07479658B2

公开(公告)日：2009-01-20

申请号：US10909477

申请日：2004-08-02

申请人： Masahiro Sakai ,  Mitsuhiro Tanaka ,  Takashi Egawa

发明人： Masahiro Sakai ,  Mitsuhiro Tanaka ,  Takashi Egawa

IPC分类号： H01L27/15 ,  H01L21/00

CPC分类号： C30B29/403 ,  C30B25/20 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  Y10T428/24942

摘要： A technique for suppressing the bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and another group III-nitride layer on a substrate with a buffer layer. The interlayer is mainly composed of a mixed crystal of GaN and InN expressed in a general formula (GaxIny)N (0≦x≦1, 0≦y≦1, x+y=1) (or a crystal of GaN), and does not contain Al. The interlayer is epitaxially formed at a lower growth temperature than those of the group III-nitride layers, more specifically at a temperature in a range of at least 350° C. to not more than 1000° C.

摘要翻译： 提供了抑制外延晶片弯曲的技术。 通过在具有缓冲层的衬底上连续外延生长目标III族氮化物层，中间层和另一III族氮化物层来制备外延晶片。 中间层主要由通式（GaxIny）N（0 <= x <= 1,0 <= y <= 1，x + y = 1）表示的GaN和InN的混合晶体（或 GaN），不含Al。 中间层在比III族氮化物层低的生长温度下外延形成，更具体地在至少350℃至不超过1000℃的温度下外延形成。

公开(公告)号：USRE40485E1

公开(公告)日：2008-09-09

申请号：US11140524

申请日：2005-05-27

申请人： Yuji Hori ,  Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda

发明人： Yuji Hori ,  Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda

IPC分类号： H01L27/15 ,  H01L21/00

CPC分类号： H01L33/325 ,  H01L33/08

摘要： In a semiconductor light-emitting element, an underlayer is made of AlN layer, and a first cladding layer is made of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer. Then, at least one rare earth metal element is incorporated into the base layer and/or the island-shaped single crystal portions.

摘要翻译： 在半导体发光元件中，底层由AlN层构成，第一包层由n-AlGaN层构成。 发光层由由i-GaN制成的基底层和在基底层中分离的由i-AlGaInN构成的多个岛状单晶部分构成。 然后，在基底层和/或岛状单晶部分中并入至少一种稀土金属元素。

公开(公告)号：US20060150895A1

公开(公告)日：2006-07-13

申请号：US11324940

申请日：2006-01-04

申请人： Tomohiko Shibata ,  Keiichiro Asai ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Keiichiro Asai ,  Mitsuhiro Tanaka

IPC分类号： C30B11/00

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/10 ,  Y10T117/1008

摘要： A hydrogen chloride gas and an ammonia gas are introduced with a carrier gas into a reactor in which a substrate and at least an aluminum metallic material through conduits. Then, the hydrogen gas and the ammonia gas are heated by heaters, and thus, a III-V nitride film including at least Al element is epitaxially grown on the substrate by using a Hydride Vapor Phase Epitaxy method. The whole of the reactor is made of an aluminum nitride material which does not suffer from the corrosion of an aluminum chloride gas generated by the reaction of an aluminum metallic material with a hydrogen chloride gas.

公开(公告)号：US07033439B2

公开(公告)日：2006-04-25

申请号：US09928523

申请日：2001-08-13

申请人： Tomohiko Shibata ,  Keiichiro Asai ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Keiichiro Asai ,  Mitsuhiro Tanaka

IPC分类号： C30B25/08

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/10 ,  Y10T117/1008

摘要： A hydrogen chloride gas and an ammonia gas are introduced with a carrier gas into a reactor in which a substrate and at least an aluminum metallic material through conduits. Then, the hydrogen gas and the ammonia gas are heated by heaters, and thus, a III–V nitride film including at least Al element is epitaxially grown on the substrate by using a Hydride Vapor Phase Epitaxy method.The whole of the reactor is made of an aluminum nitride material which does not suffer from the corrosion of an aluminum chloride gas generated by the reaction of an aluminum metallic material with a hydrogen chloride gas.

公开(公告)号：US06869702B2

公开(公告)日：2005-03-22

申请号：US10738187

申请日：2003-12-17

申请人： Tomohiko Shibata ,  Shigeaki Sumiya ,  Keiichiro Asai ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Shigeaki Sumiya ,  Keiichiro Asai ,  Mitsuhiro Tanaka

IPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/38 ,  H01L21/20 ,  H01L21/205 ,  B32B9/04

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  Y10T428/12528 ,  Y10T428/265

摘要： A substrate for epitaxial growth allowing formation of an Al-containing group III nitride film having high crystal quality is provided. A nitride film containing at least Al is formed on a 6H—SiC base by CVD at a temperature of at least 1100° C., for example. The substrate for epitaxial growth allowing formation of an Al-containing group III nitride film having high crystal quality is obtained by setting the dislocation density of the nitride film to not more than 1×1011/cm2, the full width at half maximum of an X-ray rocking curve for (002) plane to not more than 200 seconds and the full width at the half maximum of the X-ray rocking curve for (102) plane to not more than 1500 seconds.

摘要翻译： 提供了用于外延生长的衬底，其能够形成具有高晶体质量的含Al的III族氮化物膜。 至少含有Al的氮化物膜例如在至少1100℃的温度下通过CVD在6H-SiC基底上形成。 通过将氮化物膜的位错密度设定为1×10 11 / cm 2以下，可以得到具有高结晶质量的含Al III族氮化物膜的外延生长用基板，全宽为半 （002）平面的X射线摇摆曲线的最大值不大于200秒，（102）平面的X射线摇摆曲线半峰全宽不大于1500秒。

公开(公告)号：US20050028888A1

公开(公告)日：2005-02-10

申请号：US10909477

申请日：2004-08-02

申请人： Masahiro Sakai ,  Mitsuhiro Tanaka ,  Takashi Egawa

发明人： Masahiro Sakai ,  Mitsuhiro Tanaka ,  Takashi Egawa

IPC分类号： C30B25/20 ,  C30B29/40 ,  H01L21/205 ,  H01L33/12 ,  H01L33/32 ,  H01L29/00 ,  C30B1/00 ,  H01L21/00

CPC分类号： C30B29/403 ,  C30B25/20 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  Y10T428/24942

摘要： A technique for suppressing bowing of an epitaxial wafer is provided. The epitaxial wafer is prepared by successively epitaxially growing a target group III-nitride layer, an interlayer and another group III-nitride layer on a substrate with a buffer layer. The interlayer, mainly composed of a mixed crystal of GaN and InN expressed in a general formula (GaxIny)N (0≦x≦1, 0≦y≦1, x+y=1) (or a crystal of GaN), does not contains Al. The interlayer is epitaxially formed at a growth temperature lower than those of the group III-nitride layers, more specifically at a temperature of at least 350° C. and not more than 1000° C.

摘要翻译： 提供了一种用于抑制外延晶片弯曲的技术。 通过在具有缓冲层的衬底上连续外延生长目标III族氮化物层，中间层和另一III族氮化物层来制备外延晶片。 主要由通式（GaxIny）N（0≤x≤1,0<= y <= 1，x + y = 1）表示的GaN和InN的混合晶体（或者由 GaN），不含有Al。 中间层在比III族氮化物层低的生长温度下外延形成，更具体地在至少350℃和不高于1000℃的温度下外延形成。

公开(公告)号：US06707076B2

公开(公告)日：2004-03-16

申请号：US10370350

申请日：2003-02-18

申请人： Yuji Hori ,  Tomohiko Shibata ,  Osamu Oda ,  Mitsuhiro Tanaka

发明人： Yuji Hori ,  Tomohiko Shibata ,  Osamu Oda ,  Mitsuhiro Tanaka

IPC分类号： H01L29739

CPC分类号： H01L29/66318 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/66856

摘要： An AlN film as an underlayer is epitaxially grown on a substrate having a dislocation density of 1011/cm2 or below and a crystallinity of 90 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection. Then, on the AlN film an n-GaN film is epitaxially grown as a conductive layer having a dislocation density of 1010/cm2 or below and a crystallinity of 150 seconds or below in full width at half maximum (FWHM) of an X-ray rocking curve at (002) reflection, to fabricate a semiconductor element.