公开(公告)号：US08832611B2

公开(公告)日：2014-09-09

申请号：US13919577

申请日：2013-06-17

Applicant: KLA-Tencor Corporation

Inventor： Xuefeng Liu ,  Yung-Ho Alex Chuang ,  John Fielden ,  Bin-Ming Benjamin Tsai ,  Jingjing Zhang

IPC: G06F17/50 ,  G06F19/00 ,  G06F17/10

CPC classification number: G06F17/5018 ,  G03F7/70625 ,  G06F17/10 ,  G06F17/5081 ,  G06F19/00 ,  G06F2217/12 ,  G06F2217/14 ,  G06F2217/16 ,  H01L22/12 ,  H01L22/20

Abstract: Systems and methods for process aware metrology are provided. One method includes selecting nominal values and one or more different values of process parameters for one or more process steps used to form the structure on the wafer, simulating one or more characteristics of the structure that would be formed on the wafer using the nominal values, and determining parameterization of the optical model based on how the one or more characteristics of the structure vary between at least two of the nominal values and the one or more different values.

Abstract translation: 提供了流程感知度量的系统和方法。 一种方法包括为用于在晶片上形成结构的一个或多个工艺步骤选择工艺参数的标称值和一个或多个不同值，模拟使用标称值在晶片上形成的结构的一个或多个特性， 以及基于所述结构的一个或多个特性如何在所述标称值和所述一个或多个不同值中的至少两个之间变化来确定所述光学模型的参数化。

公开(公告)号：US11227770B2

公开(公告)日：2022-01-18

申请号：US16287237

申请日：2019-02-27

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Vladimir Dribinski

IPC: G01N21/59 ,  H01L21/30 ,  C30B29/10 ,  C30B33/00 ,  C30B33/02 ,  G01N21/95 ,  G02F1/35 ,  G01N21/3563 ,  G01N21/88 ,  H01L21/322 ,  H01S3/02 ,  H01S3/094 ,  H01S3/109 ,  H01S3/16 ,  G01N21/35 ,  G01N21/84

Abstract: A laser system includes a nonlinear optical (NLO) crystal, wherein the NLO crystal is annealed within a selected temperature range. The NLO crystal is passivated with at least one of hydrogen, deuterium, a hydrogen-containing compound or a deuterium-containing compound to a selected passivation level. The system further includes at least one light source, wherein at least one light source is configured to generate light of a selected wavelength and at least one light source is configured to transmit light through the NLO crystal. The system further includes a crystal housing unit configured to house the NLO crystal.

公开(公告)号：US11067389B2

公开(公告)日：2021-07-20

申请号：US15952081

申请日：2018-04-12

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Yinying Xiao-Li ,  John Fielden ,  Xuefeng Liu ,  Peilin Jiang

IPC: G01B11/27

Abstract: A system for measuring an overlay error of a sample is disclosed. The system may include a broadband illumination source configured to emit broadband illumination. The system may also include one or more optical elements configured to direct the broadband illumination to a target disposed on the sample, wherein the one or more optical elements are configured to collect illumination from the target and direct it to a spectrometer, wherein the spectrometer is configured to disperse multiple wavelengths of the illumination collected from the sample to multiple elements of a sensor to generate a plurality of signals. The system may also include a controller configured to calculate an overlay error between a first structure and a second structure of the target by comparing the plurality of signals with a plurality of calculated signals.

公开(公告)号：US10462391B2

公开(公告)日：2019-10-29

申请号：US15210056

申请日：2016-07-14

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  David L. Brown ,  Devis Contarato ,  John Fielden ,  Daniel I. Kavaldjiev ,  Guoheng Zhao ,  Jehn-Huar Chern ,  Guowu Zheng ,  Donald W. Pettibone ,  Stephen Biellak

IPC: H04N5/335 ,  G01N21/95 ,  G06T7/00 ,  H04N5/225 ,  H04N5/347 ,  H04N5/378 ,  H04N5/3745 ,  H04N5/376 ,  G01N21/956

Abstract: An inspection system and methods in which analog image data values (charges) captured by an image sensor are binned (combined) before or while being transmitted as output signals on the image sensor's output sensing nodes (floating diffusions), and in which an ADC is controlled to sequentially generate multiple corresponding digital image data values between each reset of the output sensing nodes. According to an output binning method, the image sensor is driven to sequentially transfer multiple charges onto the output sensing nodes between each reset, and the ADC is controlled to convert the incrementally increasing output signal after each charge is transferred onto the output sensing node. According to a multi-sampling method, multiple charges are vertically or horizontally binned (summed/combined) before being transferred onto the output sensing node, and the ADC samples each corresponding output signal multiple times. The output binning and multi-sampling methods may be combined.

公开(公告)号：US20190131465A1

公开(公告)日：2019-05-02

申请号：US16151225

申请日：2018-10-03

Applicant: KLA-Tencor Corporation

Inventor： Jehn-Huar Chern ,  Ali R. Ehsani ,  Gildardo Delgado ,  David L. Brown ,  Yung-Ho Alex Chuang ,  John Fielden

IPC: H01L31/0216 ,  G01N21/956 ,  H01L27/146 ,  G01N21/95 ,  H01L27/148 ,  G01N21/88

CPC classification number: H01L31/0216 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/95676 ,  H01L27/1462 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14689 ,  H01L27/14806

Abstract: An inspection system including an optical system (optics) to direct light from an illumination source to a sample, and to direct light reflected/scattered from the sample to one or more image sensors. At least one image sensor of the system is formed on a semiconductor membrane including an epitaxial layer having opposing surfaces, with circuit elements formed on one surface of the epitaxial layer, and a pure boron layer and a doped layer on the other surface of the epitaxial layer. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.

公开(公告)号：US20190066962A1

公开(公告)日：2019-02-28

申请号：US16177144

申请日：2018-10-31

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  John Fielden

IPC: H01J29/38 ,  H01L27/148 ,  H01J31/50 ,  G02B21/12 ,  G01N21/95 ,  H01J31/26 ,  H01J1/34 ,  H01L27/146

Abstract: A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel electron-bombarded charge-coupled device (EBCCD) sensors and inspection systems.

公开(公告)号：US20190056637A1

公开(公告)日：2019-02-21

申请号：US16036724

申请日：2018-07-16

Applicant: KLA-Tencor Corporation

Inventor： Mandar Paranjape ,  Vladimir Dribinski ,  Yung-Ho Alex Chuang

IPC: G02F1/35 ,  G02F1/355 ,  H01S3/109 ,  H01S3/094 ,  C30B33/00 ,  G01N21/84

Abstract: In-situ passivation of a nonlinear optical (NLO) crystal during operation of a characterization tool includes converting a laser beam of a selected wavelength to a converted laser beam of a harmonic wavelength via a nonlinear optical (NLO) crystal and passivating the NLO crystal during conversion to the converted laser beam of the harmonic wavelength.

公开(公告)号：US20190049851A1

公开(公告)日：2019-02-14

申请号：US16161010

申请日：2018-10-15

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Yinying Xiao-Li ,  Xuefeng Liu ,  John Fielden

IPC: G03F7/20 ,  H01J37/073 ,  H01J1/34 ,  H01J1/304 ,  H01J35/06

CPC classification number: G03F7/70008 ,  H01J1/304 ,  H01J1/34 ,  H01J35/065 ,  H01J37/073 ,  H01J2201/30411 ,  H01J2201/3048 ,  H01J2237/0635

Abstract: An electron source is formed on a silicon substrate having opposing first and second surfaces. At least one field emitter is prepared on the second surface of the silicon substrate to enhance the emission of electrons. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitter using a process that minimizes oxidation and defects. The field emitter can take various shapes such as pyramids and rounded whiskers. One or several optional gate layers may be placed at or slightly lower than the height of the field emitter tip in order to achieve fast and accurate control of the emission current and high emission currents. The field emitter can be p-type doped and configured to operate in a reverse bias mode or the field emitter can be n-type doped.

公开(公告)号：US10044164B2

公开(公告)日：2018-08-07

申请号：US15239268

申请日：2016-08-17

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Xiaoxu Lu ,  Justin Dianhuan Liou ,  J. Joseph Armstrong ,  Yujun Deng ,  John Fielden

IPC: H01S3/10 ,  H01S3/00 ,  H01S3/08 ,  H01S3/083

Abstract: A repetition rate (pulse) multiplier includes one or more beam splitters and prisms forming one or more ring cavities with different optical path lengths that delay parts of the energy of each pulse. A series of input laser pulses circulate in the ring cavities and part of the energy of each pulse leaves the system after traversing the shorter cavity path, while another part of the energy leaves the system after traversing the longer cavity path, and/or a combination of both cavity paths. By proper choice of the ring cavity optical path length, the repetition rate of an output series of laser pulses can be made to be a multiple of the input repetition rate. The relative energies of the output pulses can be controlled by choosing the transmission and reflection coefficients of the beam splitters. Some embodiments generate a time-averaged output beam profile that is substantially flat in one dimension.

公开(公告)号：US10032619B2

公开(公告)日：2018-07-24

申请号：US15842540

申请日：2017-12-14

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  Xiaoxu Lu ,  Justin Liou ,  John Fielden

IPC: H01L21/00 ,  H01J61/16 ,  G02B5/32 ,  H01J61/02 ,  H05H1/24 ,  H01J61/20

CPC classification number: H01J61/025 ,  H01J61/125 ,  H01J61/16 ,  H01J61/20 ,  H01J61/54 ,  H01J65/04 ,  H05H1/24

Abstract: A high brightness laser-sustained broadband light source includes a gas containment structure and a pump laser configured to generate a pump beam including illumination of a wavelength at least proximate to a weak absorption line of a neutral gas contained in the gas containment structure. The broadband light source includes one or more anamorphic illumination optics configured to focus the pump beam into an approximately elliptical beam waist positioned in or proximate to the center of the gas containment structure. The broadband light source includes one or more first collection optics configured to collect broadband radiation emitted by the plasma in a direction substantially aligned with a longer axis of the elliptical beam waist.