公开(公告)号：US09082919B2

公开(公告)日：2015-07-14

申请号：US13451439

申请日：2012-04-19

申请人： Hui Nie ,  Brendan M. Kayes ,  Isik C. Kizilyalli

发明人： Hui Nie ,  Brendan M. Kayes ,  Isik C. Kizilyalli

IPC分类号： H01L31/0304 ,  H01L31/0735 ,  H01L31/0224 ,  H01L31/18

摘要： Embodiments generally relate to optoelectronic semiconductor devices such as photovoltaic cells. In one aspect, a method for forming a device includes forming an absorber layer made of gallium arsenide (GaAs) and having one type of doping, and forming an emitter layer made of a different material and having a higher bandgap than the absorber layer. An intermediate layer can be formed between emitter and absorber layers. A heterojunction and p-n junction are formed between the emitter layer and the absorber layer, where the p-n junction is formed at least partially within the different material at a location offset from the heterojunction. A majority of the absorber layer can be outside of a depletion region formed by the p-n junction. The p-n junction causes a voltage to be generated in the cell in response to the cell being exposed to light at a front side.

公开(公告)号：US09048366B2

公开(公告)日：2015-06-02

申请号：US13451439

申请日：2012-04-19

申请人： Hui Nie ,  Brendan M. Kayes ,  Isik C. Kizilyalli

发明人： Hui Nie ,  Brendan M. Kayes ,  Isik C. Kizilyalli

IPC分类号： H01L31/0304 ,  H01L31/0735 ,  H01L31/0224 ,  H01L31/18

摘要： Embodiments generally relate to optoelectronic semiconductor devices such as photovoltaic cells. In one aspect, a method for forming a device includes forming an absorber layer made of gallium arsenide (GaAs) and having one type of doping, and forming an emitter layer made of a different material and having a higher bandgap than the absorber layer. An intermediate layer can be formed between emitter and absorber layers. A heterojunction and p-n junction are formed between the emitter layer and the absorber layer, where the p-n junction is formed at least partially within the different material at a location offset from the heterojunction. A majority of the absorber layer can be outside of a depletion region formed by the p-n junction. The p-n junction causes a voltage to be generated in the cell in response to the cell being exposed to light at a front side.

公开(公告)号：US08981432B2

公开(公告)日：2015-03-17

申请号：US13572408

申请日：2012-08-10

申请人： Hui Nie ,  Donald R. Disney ,  Isik C. Kizilyalli

发明人： Hui Nie ,  Donald R. Disney ,  Isik C. Kizilyalli

IPC分类号： H01L29/80

CPC分类号： H01L21/0254 ,  H01L21/02645 ,  H01L21/6835 ,  H01L24/83 ,  H01L29/2003 ,  H01L29/66204 ,  H01L29/66212 ,  H01L29/66356 ,  H01L29/66446 ,  H01L29/739 ,  H01L29/8083 ,  H01L29/861 ,  H01L29/872 ,  H01L2221/68327 ,  H01L2224/04026 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/32245 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/12032 ,  H01L2924/13062 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for fabricating an electronic device includes providing an engineered substrate structure comprising a III-nitride seed layer, forming GaN-based functional layers coupled to the III-nitride seed layer, and forming a first electrode structure electrically coupled to at least a portion of the GaN-based functional layers. The method also includes joining a carrier substrate opposing the GaN-based functional layers and removing at least a portion of the engineered substrate structure. The method further includes forming a second electrode structure electrically coupled to at least another portion of the GaN-based functional layers and removing the carrier substrate.

摘要翻译： 一种制造电子器件的方法包括提供包括III族氮化物种子层的工程化衬底结构，形成与III族氮化物种子层耦合的GaN基功能层，以及形成电耦合到至少一部分 GaN基功能层。 该方法还包括将与GaN基功能层相对的载体衬底接合并去除工程衬底结构的至少一部分。 该方法还包括形成电耦合到GaN基功能层的至少另一部分并去除载体衬底的第二电极结构。

公开(公告)号：US20140042447A1

公开(公告)日：2014-02-13

申请号：US13572408

申请日：2012-08-10

申请人： Hui Nie ,  Donald R. Disney ,  Isik C. Kizilyalli

发明人： Hui Nie ,  Donald R. Disney ,  Isik C. Kizilyalli

IPC分类号： H01L29/80 ,  H01L29/20 ,  H01L21/20

CPC分类号： H01L21/0254 ,  H01L21/02645 ,  H01L21/6835 ,  H01L24/83 ,  H01L29/2003 ,  H01L29/66204 ,  H01L29/66212 ,  H01L29/66356 ,  H01L29/66446 ,  H01L29/739 ,  H01L29/8083 ,  H01L29/861 ,  H01L29/872 ,  H01L2221/68327 ,  H01L2224/04026 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/32245 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/12032 ,  H01L2924/13062 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for fabricating an electronic device includes providing an engineered substrate structure comprising a III-nitride seed layer, forming GaN-based functional layers coupled to the III-nitride seed layer, and forming a first electrode structure electrically coupled to at least a portion of the GaN-based functional layers. The method also includes joining a carrier substrate opposing the GaN-based functional layers and removing at least a portion of the engineered substrate structure. The method further includes forming a second electrode structure electrically coupled to at least another portion of the GaN-based functional layers and removing the carrier substrate.

摘要翻译： 一种制造电子器件的方法包括提供包括III族氮化物种子层的工程化衬底结构，形成与III族氮化物种子层耦合的GaN基功能层，以及形成电耦合到至少一部分 GaN基功能层。 该方法还包括将与GaN基功能层相对的载体衬底接合并去除工程衬底结构的至少一部分。 该方法还包括形成电耦合到GaN基功能层的至少另一部分并去除载体衬底的第二电极结构。

公开(公告)号：US09136418B2

公开(公告)日：2015-09-15

申请号：US13451455

申请日：2012-04-19

申请人： Hui Nie ,  Brendan M. Kayes ,  Isik C. Kizilyalli

发明人： Hui Nie ,  Brendan M. Kayes ,  Isik C. Kizilyalli

IPC分类号： H01L21/04 ,  H01L31/0735 ,  H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/0735 ,  H01L31/022441 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/544

摘要： Embodiments generally relate to optoelectronic semiconductor devices such as solar cells. In one aspect, a device includes an absorber layer made of gallium arsenide (GaAs) and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device and is made of a different material and having a higher bandgap than the absorber layer. A heterojunction is formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer and at least partially within the different material at a location offset from the heterojunction. An intermediate layer is located between the absorber layer and the emitter layer and provides the offset of the p-n junction from the heterojunction, and includes a graded layer and an ungraded back window layer.

摘要翻译： 实施例通常涉及诸如太阳能电池的光电半导体器件。 在一个方面，器件包括由砷化镓（GaAs）制成并且仅具有一种掺杂类型的吸收层。 发射极层位于比器件的背面靠近吸收体层，并且由不同的材料制成并具有比吸收层更高的带隙。 在发射极层和吸收层之间形成异质结，并且在偏离异质结的位置处，在发射极层和吸收层之间形成p-n结，并且至少部分地在不同的材料内形成p-n结。 中间层位于吸收层和发射极层之间，并且提供p-n结与异质结的偏移，并且包括渐变层和未分级的后窗层。

公开(公告)号：US09136417B2

公开(公告)日：2015-09-15

申请号：US13451439

申请日：2012-04-19

申请人： Hui Nie ,  Brendan M. Kayes ,  Isik C. Kizilyalli

发明人： Hui Nie ,  Brendan M. Kayes ,  Isik C. Kizilyalli

IPC分类号： H01L31/0304 ,  H01L31/0735 ,  H01L31/0224 ,  H01L31/18

摘要： Embodiments generally relate to optoelectronic semiconductor devices such as photovoltaic cells. In one aspect, a method for forming a device includes forming an absorber layer made of gallium arsenide (GaAs) and having one type of doping, and forming an emitter layer made of a different material and having a higher bandgap than the absorber layer. An intermediate layer can be formed between emitter and absorber layers. A heterojunction and p-n junction are formed between the emitter layer and the absorber layer, where the p-n junction is formed at least partially within the different material at a location offset from the heterojunction. A majority of the absorber layer can be outside of a depletion region formed by the p-n junction. The p-n junction causes a voltage to be generated in the cell in response to the cell being exposed to light at a front side.

公开(公告)号：US08741707B2

公开(公告)日：2014-06-03

申请号：US13335383

申请日：2011-12-22

申请人： Donald R. Disney ,  Isik C. Kizilyalli ,  Linda Romano ,  Andrew Edwards ,  Hui Nie

发明人： Donald R. Disney ,  Isik C. Kizilyalli ,  Linda Romano ,  Andrew Edwards ,  Hui Nie

IPC分类号： H01L21/338 ,  H01L29/18 ,  H01L29/872 ,  H01L29/06 ,  H01L29/20 ,  H01L21/04

CPC分类号： H01L29/872 ,  H01L21/0495 ,  H01L21/2654 ,  H01L21/76224 ,  H01L29/0611 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/402

摘要： A method for fabricating an edge termination, which can be used in conjunction with GaN-based materials, includes providing a substrate of a first conductivity type. The substrate has a first surface and a second surface. The method also includes forming a first GaN epitaxial layer of the first conductivity type coupled to the first surface of the substrate and forming a second GaN epitaxial layer of a second conductivity type opposite to the first conductivity type. The second GaN epitaxial layer is coupled to the first GaN epitaxial layer. The substrate, the first GaN epitaxial layer and the second GaN epitaxial layer can be referred to as an epitaxial structure.

摘要翻译： 可以与GaN基材料一起使用的用于制造边缘终端的方法包括提供第一导电类型的衬底。 基板具有第一表面和第二表面。 该方法还包括形成耦合到衬底的第一表面的第一导电类型的第一GaN外延层，并形成与第一导电类型相反的第二导电类型的第二GaN外延层。 第二GaN外延层耦合到第一GaN外延层。 衬底，第一GaN外延层和第二GaN外延层可以被称为外延结构。

公开(公告)号：US20130299882A1

公开(公告)日：2013-11-14

申请号：US13468332

申请日：2012-05-10

申请人： Donald R. Disney ,  Richard J. Brown ,  Hui Nie

发明人： Donald R. Disney ,  Richard J. Brown ,  Hui Nie

IPC分类号： H01L29/80 ,  H01L21/20

CPC分类号： H01L29/41741 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66446 ,  H01L29/8083

摘要： A semiconductor device includes a III-nitride substrate and a channel structure coupled to the III-nitride substrate. The channel structure comprises a first III-nitride epitaxial material and is characterized by one or more channel sidewalls. The semiconductor device also includes a source region coupled to the channel structure. The source region comprises a second III-nitride epitaxial material. The semiconductor device further includes a III-nitride gate structure coupled to the one or more channel sidewalls, a gate metal structure in electrical contact with the III-nitride gate structure, and a dielectric layer overlying at least a portion of the gate metal structure. A top surface of the dielectric layer is substantially co-planar with a top surface of the source region.

摘要翻译： 半导体器件包括III族氮化物衬底和耦合到III族氮化物衬底的沟道结构。 沟道结构包括第一III族氮化物外延材料，其特征在于一个或多个沟道侧壁。 半导体器件还包括耦合到沟道结构的源极区域。 源区包括第二III族氮化物外延材料。 所述半导体器件还包括耦合到所述一个或多个沟道侧壁的III族氮化物栅极结构，与所述III族氮化物栅极结构电接触的栅极金属结构以及覆盖所述栅极金属结构的至少一部分的介电层。 电介质层的顶表面与源区的顶表面基本上共面。

公开(公告)号：US20130299873A1

公开(公告)日：2013-11-14

申请号：US13468325

申请日：2012-05-10

申请人： Donald R. Disney ,  Richard J. Brown ,  Hui Nie

发明人： Donald R. Disney ,  Richard J. Brown ,  Hui Nie

IPC分类号： H01L29/80 ,  H01L21/335

CPC分类号： H01L29/8083 ,  H01L29/2003 ,  H01L29/66909

摘要： A semiconductor device includes a III-nitride substrate and a first III-nitride epitaxial layer coupled to the III-nitride substrate and comprising a drift region, a channel region, and an extension region. The channel region is separated from the III-nitride substrate by the drift region. The channel region is characterized by a first width. The extension region is separated from the drift region by the channel region. The extension region is characterized by a second width less than the first width. The semiconductor device also includes a second III-nitride epitaxial layer coupled to a top surface of the extension region, a III-nitride gate structure coupled to a sidewall of the channel region and laterally self-aligned with respect to the extension region, and a gate metal structure in electrical contact with the III-nitride gate structure and laterally self-aligned with respect to the extension region.

摘要翻译： 半导体器件包括III族氮化物衬底和耦合到III族氮化物衬底并且包括漂移区，沟道区和延伸区的第一III族氮化物外延层。 沟道区域通过漂移区域与III族氮化物衬底分离。 通道区域的特征在于第一宽度。 延伸区域通过沟道区域与漂移区域分离。 延伸区域的特征在于小于第一宽度的第二宽度。 半导体器件还包括耦合到延伸区域的顶表面的第二III族氮化物外延层，耦合到沟道区域的侧壁并相对于延伸区域横向自对准的III族氮化物栅极结构，以及 栅极金属结构与III族氮化物栅极结构电接触并且相对于延伸区域横向自对准。

公开(公告)号：US08716078B2

公开(公告)日：2014-05-06

申请号：US13468325

申请日：2012-05-10

申请人： Donald R. Disney ,  Richard J. Brown ,  Hui Nie

发明人： Donald R. Disney ,  Richard J. Brown ,  Hui Nie

IPC分类号： H01L21/337

CPC分类号： H01L29/8083 ,  H01L29/2003 ,  H01L29/66909

摘要： A semiconductor device includes a III-nitride substrate and a first III-nitride epitaxial layer coupled to the III-nitride substrate and comprising a drift region, a channel region, and an extension region. The channel region is separated from the III-nitride substrate by the drift region. The channel region is characterized by a first width. The extension region is separated from the drift region by the channel region. The extension region is characterized by a second width less than the first width. The semiconductor device also includes a second III-nitride epitaxial layer coupled to a top surface of the extension region, a III-nitride gate structure coupled to a sidewall of the channel region and laterally self-aligned with respect to the extension region, and a gate metal structure in electrical contact with the III-nitride gate structure and laterally self-aligned with respect to the extension region.

摘要翻译： 半导体器件包括III族氮化物衬底和耦合到III族氮化物衬底并且包括漂移区，沟道区和延伸区的第一III族氮化物外延层。 沟道区域通过漂移区域与III族氮化物衬底分离。 通道区域的特征在于第一宽度。 延伸区域通过沟道区域与漂移区域分离。 延伸区域的特征在于小于第一宽度的第二宽度。 半导体器件还包括耦合到延伸区域的顶表面的第二III族氮化物外延层，耦合到沟道区域的侧壁并相对于延伸区域横向自对准的III族氮化物栅极结构，以及 栅极金属结构与III族氮化物栅极结构电接触并且相对于延伸区域横向自对准。