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235 条记录 (耗时 0.028 秒)

    Blow filter device
    61.
    发明授权
    Blow filter device 有权
    吹风过滤装置

    公开(公告)号：US08118025B2

    公开(公告)日：2012-02-21

    申请号：US10592424

    申请日：2005-01-27

    申请人： Frank Becker ,  Detlef Kielow ,  Martin Weber ,  Michael Schulz

    发明人： Frank Becker ,  Detlef Kielow ,  Martin Weber ,  Michael Schulz

    IPC分类号： A62B7/10

    CPC分类号： A62B18/006 ,  A62B17/04

    摘要： A blow filter device for breathing masks and hoods, comprising a blower which is driven by a motor and at least one filter which is arranged upstream from the blower, in addition to an electronic control system for adjusting a predefined airflow volume. The invention is characterized in that the motor is an electronically commutated direct current motor (6) which is controlled with the aid of a pulse width modulation ratio as a control variable, wherein a calibrating curve is created and stored in the memory (14) of the electronic control system and is based on a plurality of different filter resistances and a respectively corresponding pulse-width modulation ratio (PWM) and the respective motor speed (n) for a specific volume of air. The direct current motor can be controlled in the hood mode according to the speed (n) measured in relation to the respective filter resistance after activation with the aid of the associated pulse-width modulation ratio read from the calibrating curve and can be controlled in the mask mode independently of the respective filter resistance with a respective specific constant pulse-width modulation ratio (PWM) for the associated mask type, wherein the electronic control system (5) is associated with an identifying means (19,20) which is used to recognize the associated head part and to adjust the operational mode concerned.

    摘要翻译： 一种用于呼吸面罩和罩的吹风过滤器装置，包括由电动机驱动的鼓风机和布置在鼓风机上游的至少一个过滤器，以及用于调节预定气流量的电子控制系统。 本发明的特征在于，电动机是电子换向直流电动机（6），其以脉宽调制比作为控制变量进行控制，其中校准曲线被创建并存储在存储器（14）的 电子控制系统并且基于针对特定体积的空气的多个不同的滤波电阻和分别对应的脉宽调制比（PWM）和相应的电动机速度（n）。 根据从校准曲线读取的相关脉冲宽度调制比，根据相对于激活后的相应滤波器电阻测量的速度（n），可以在发动机罩模式下控制直流电动机，并且可以在 掩模模式独立于相应的滤波器电阻和相应掩模类型的相应的特定恒定脉冲宽度调制比（PWM），其中电子控制系统（5）与识别装置（19,20）相关联，识别装置 识别相关的头部并调整相关的操作模式。

    Semiconductor Wafers Of Silicon and Method For Their Production
    62.
    发明申请
    Semiconductor Wafers Of Silicon and Method For Their Production 有权
    硅半导体晶片及其制造方法

    公开(公告)号：US20110316128A1

    公开(公告)日：2011-12-29

    申请号：US13225822

    申请日：2011-09-06

    申请人： Andreas Sattler ,  Wilfried von Ammon ,  Martin Weber ,  Walter Haeckl ,  Herbert Schmidt

    发明人： Andreas Sattler ,  Wilfried von Ammon ,  Martin Weber ,  Walter Haeckl ,  Herbert Schmidt

    IPC分类号： H01L29/02

    CPC分类号： C30B29/06 ,  C30B15/203

    摘要： Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method.

    摘要翻译： 硅的半导体晶片是通过从包含在坩埚中的熔融物中拉出在相边界上生长的单晶并从其中切割半导体晶片而制造的，其中在单晶拉制期间，热被传递到相边界的中心，并且 控制从相位边界的中心到边缘的比率V / G的径向轮廓，G是垂直于相边界的温度梯度，V是牵引速率。 控制比率V / G的径向轮廓，使得邻接相位边界的单晶中的热机械应力的影响被补偿以产生固有点缺陷。 本发明还涉及硅的无缺陷半导体晶片，其可以通过该方法经济地制造。

    REINFORCED THERMOPLASTIC MOLDING COMPOSITIONS BASED ON POLYARYLENE ETHERS
    63.
    发明申请
    REINFORCED THERMOPLASTIC MOLDING COMPOSITIONS BASED ON POLYARYLENE ETHERS 有权
    基于聚氨酯的增强热塑性成型组合物

    公开(公告)号：US20110294912A1

    公开(公告)日：2011-12-01

    申请号：US13115513

    申请日：2011-05-25

    申请人： Martin Weber ,  Christian Maletzko ,  Mark Völkel

    发明人： Martin Weber ,  Christian Maletzko ,  Mark Völkel

    IPC分类号： C08L81/06 ,  C08J9/35 ,  C08K7/14 ,  C08L71/10

    CPC分类号： C08L71/00 ,  C08L81/06

    摘要： The present invention relates to thermoplastic molding compositions composed of the following components: (A) at least one polyarylene ether (A1) having an average of at most 0.1 phenolic end groups per polymer chain, and at least one polyarylene ether (A2) having an average of at least 1.5 phenolic end groups per polymer chain, (B) at least one fibrous or particulate filler, and (C) optionally further additives and/or processing aids. The present invention further relates to a process for producing the thermoplastic molding compositions of the invention, the use of these for producing moldings, fibers, foams, or films, and to the resultant moldings, fibers, foams, and films.

    摘要翻译： 本发明涉及由以下组分组成的热塑性模塑组合物：（A）每个聚合物链平均具有至多0.1个酚类末端基团的至少一种聚亚芳基醚（A1）和至少一种聚亚芳基醚（A2），其具有 每个聚合物链平均至少1.5个酚类端基，（B）至少一种纤维或颗粒填料，和（C）任选的其它添加剂和/或加工助剂。 本发明还涉及本发明的热塑性模塑组合物的制备方法，其用于生产模制品，纤维，泡沫或薄膜以及所得模制品，纤维，泡沫和薄膜的用途。

    BLENDS OF POLYARYLENE ETHERS AND POLYARYLENE SULFIDES
    65.
    发明申请
    BLENDS OF POLYARYLENE ETHERS AND POLYARYLENE SULFIDES 审中-公开
    聚乙烯醚和聚亚烷基硫化物的混合物

    公开(公告)号：US20110218294A1

    公开(公告)日：2011-09-08

    申请号：US13040593

    申请日：2011-03-04

    申请人： Martin Weber ,  Christian Maletzko ,  Susanne Zeiher ,  Mark Völkel ,  Norbert Güntherberg ,  Rüdiger Bluhm

    发明人： Martin Weber ,  Christian Maletzko ,  Susanne Zeiher ,  Mark Völkel ,  Norbert Güntherberg ,  Rüdiger Bluhm

    IPC分类号： C08L81/04

    CPC分类号： C08L81/04

    摘要： The present invention relates to thermoplastic molding compositions comprising the following components: (A) at least one polyarylene ether (A1) having an average of at most 0.1 phenolic end group per polymer chain and at least one polyarylene ether (A2) having an average of at least 1.5 phenolic end groups per polymer chain, (B) at least one polyarylene sulfide, (C) at least one functionalized polyarylene ether comprising carboxy groups, (D) at least one fibrous or particulate filler, and (E) optionally further additives and/or processing aids. The present invention further relates to a process for producing the thermoplastic molding compositions of the invention, to the use of these for producing moldings, fibers, foams, or films, and to the resultant moldings, fibers, foams, and films.

    摘要翻译： 本发明涉及包含以下组分的热塑性模塑组合物：（A）每个聚合物链平均具有至多0.1个酚端基的至少一个聚亚芳基醚（A1）和至少一个具有平均值的聚亚芳基醚（A2） 每个聚合物链具有至少1.5个酚类端基，（B）至少一种聚芳硫醚，（C）至少一种包含羧基的官能化聚亚芳基醚，（D）至少一种纤维或颗粒填料，和（E）任选的其它添加剂 和/或加工助剂。 本发明还涉及本发明的热塑性模塑组合物的制造方法，其用于制造模制品，纤维，泡沫或薄膜以及所得模制品，纤维，泡沫和薄膜。

    Method For Pulling A Single Crystal Composed Of Silicon From A Melt Contained In A Crucible, and Single Crystal Produced Thereby
    66.
    发明申请
    Method For Pulling A Single Crystal Composed Of Silicon From A Melt Contained In A Crucible, and Single Crystal Produced Thereby 有权
    从坩埚中包含的熔体和由此产生的单晶中拉取由硅组成的单晶的方法

    公开(公告)号：US20110195251A1

    公开(公告)日：2011-08-11

    申请号：US13014804

    申请日：2011-01-27

    申请人： Erich Gmeilbauer ,  Robert Vorbuchner ,  Martin Weber

    发明人： Erich Gmeilbauer ,  Robert Vorbuchner ,  Martin Weber

    IPC分类号： C30B29/06 ,  C30B15/00 ,  C30B29/66

    CPC分类号： C30B29/06 ,  C30B15/14 ,  Y10T428/298

    摘要： Silicon single crystals are pulled from a melt in a crucible, the single crystal surrounded by a heat shield, the lower end of which is a distance h from the melt surface, wherein gas flows downward between the single crystal and the heat shield, outward between the lower end of the heat shield and the melt, and then upward in the region outside the heat shield. The internal diameter of the heat shield at its lower end is 55 mm or more than the diameter of the single crystal, and the radial width of the heat shield at its lower end is not more than 20% of the diameter of the single crystal. Highly doped single crystals pulled accordingly have a void concentration ≦50 m−3.

    摘要翻译： 硅单晶从坩埚中的熔体中拉出，单晶由隔热罩包围，其下端距离熔体表面有一个距离h，其中气体在单晶和隔热罩之间向下流动， 隔热罩的下端和熔体，然后在隔热罩外面的区域向上。 隔热罩下端的内径为单晶直径的55mm以上，其下端的隔热罩的径向宽度不大于单晶直径的20％。 相应地，高度掺杂的单晶具有空隙浓度nlE; 50m-3。

    Electrochemical Sensor with Diffusion Labyrinth
    68.
    发明申请
    Electrochemical Sensor with Diffusion Labyrinth 有权
    带扩散迷宫的电化学传感器

    公开(公告)号：US20110100811A1

    公开(公告)日：2011-05-05

    申请号：US12992148

    申请日：2009-05-07

    申请人： Rolf Eckhardt ,  Martin Weber

    发明人： Rolf Eckhardt ,  Martin Weber

    IPC分类号： G01N27/49

    CPC分类号： G01N27/404

    摘要： The invention relates to an electrochemical sensor including a housing with a chamber containing an electrolyte, at least one measuring electrode for oxygen detection, at least one counter electrode and at least one reference electrode, wherein the sensor has a two-part diffusion barrier, wherein a first part of the barrier forms a labyrinth with a second part of the barrier disposed between the measuring and the counter electrode.

    摘要翻译： 本发明涉及一种电化学传感器，其包括具有包含电解质的室的壳体，用于氧气检测的至少一个测量电极，至少一个对电极和至少一个参考电极，其中所述传感器具有两部分扩散阻挡层，其中 屏障的第一部分形成迷宫，其中第二部分屏障设置在测量电极和对电极之间。

    Method and device for the production of a silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributions
    69.
    发明授权
    Method and device for the production of a silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributions 有权
    用于制造具有确定的缺陷分布的硅单晶，硅单晶和硅半导体晶片的方法和装置

    公开(公告)号：US07708830B2

    公开(公告)日：2010-05-04

    申请号：US11513701

    申请日：2006-08-31

    申请人： Wilfried Von Ammon ,  Janis Virbulis ,  Martin Weber ,  Thomas Wetzel ,  Herbert Schmidt

    发明人： Wilfried Von Ammon ,  Janis Virbulis ,  Martin Weber ,  Thomas Wetzel ,  Herbert Schmidt

    IPC分类号： C30B15/10

    CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206 ,  Y10T117/1068

    摘要： A method for the production of a silicon single crystal by pulling the single crystal, according to the Czochralski method, from a melt which is held in a rotating crucible, the single crystal growing at a growth front, heat being deliberately supplied to the center of the growth front by a heat flux directed at the growth front. The method produces a silicon single crystal with an oxygen content of from 4*1017 cm−3 to 7.2*1017 cm−3 and a radial concentration change for boron or phosphorus of less than 5%, which has no agglomerated self-point defects. Semiconductor wafers are separated from the single crystal. These semiconductor wafers have may have agglomerated vacancy defects (COPs) as the only self-point defect type or may have certain other defect distributions.

    摘要翻译： 通过使用Czochralski法从保持在旋转坩埚中的熔体中拉出单晶而生长单晶的方法，在生长前沿生长的单晶，故意将热量供给到 通过针对生长前沿的热通量的增长前沿。 该方法产生氧含量为4×10 17 cm -3至7.2×10 17 cm -3的硅单晶，并且硼或磷的径向浓度变化小于5％，其没有凝聚的自点缺陷。 半导体晶片与单晶分离。 这些半导体晶片可以具有作为唯一自点缺陷类型的聚集空位缺陷（COP），或者可以具有某些其他缺陷分布。