公开(公告)号：US20190304793A1

公开(公告)日：2019-10-03

申请号：US16444146

申请日：2019-06-18

Applicant: Mattson Technology, Inc.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/30 ,  H01L21/3213 ,  B01D67/00 ,  H01L21/302 ,  C23C16/452 ,  H01L21/311 ,  C23F1/12 ,  H01L21/02 ,  H01J37/32 ,  H01L21/768 ,  H01L21/027

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include performing an organic radical based surface treatment process on a workpiece. The organic radical based surface treatment process can include generating one or more species in a first chamber. The surface treatment process can include mixing one or more hydrocarbon molecules with the species to create a mixture. The mixture can include one or more organic radicals. The surface treatment process can include exposing a semiconductor material on the workpiece to the mixture in a second chamber.

公开(公告)号：US20190295869A1

公开(公告)日：2019-09-26

申请号：US16356074

申请日：2019-03-18

Applicant: Mattson Technology, Inc.

Inventor： Rolf Bremensdorfer ,  Johannes Keppler ,  Michael X. Yang ,  Thorsten Hülsmann

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/324

Abstract: Support plates for localized heating in thermal processing systems to uniformly heat workpieces are provided. In one example implementation, localized heating is achieved by modifying a heat transmittance of a support plate such that one or more portions of the support plate proximate the areas that cause cold spots transmit more heat than the rest of the support plate. For example, the one or more portions (e.g., arears proximate to one or more support pins) of the support plate have a higher heat transmittance (e.g., a higher optical transmission) than the rest of the support plate. In another example implementation, localized heating is achieved by heating a workpiece via a coherent light source through a transmissive support structure (e.g., one or more support pins, or a ring support) in addition to heating the workpiece globally by light from heat sources.

公开(公告)号：US20190214262A1

公开(公告)日：2019-07-11

申请号：US16357800

申请日：2019-03-19

Applicant: Mattson Technology, Inc.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/30 ,  H01L21/3213 ,  H01L21/311 ,  B01D67/00 ,  C23C16/452 ,  C23F1/12 ,  H01L21/302

Abstract: Surface treatment processes for treating a workpiece with organic radicals are provided. In one example implementation, a method for processing a workpiece having a semiconductor material and a carbon containing layer (e.g., photoresist) can include a surface treatment process on the workpiece. The surface treatment process can include generating one or more species in a first chamber (e.g., a plasma chamber). The surface treatment process can include mixing one or more hydrocarbon radicals with the species to create a mixture. The surface treatment process can include exposing the carbon containing layer to the mixture in a second chamber (e.g., a processing chamber).

公开(公告)号：US20190189479A1

公开(公告)日：2019-06-20

申请号：US16208003

申请日：2018-12-03

Applicant: Mattson Technology, Inc.

Inventor： Shuang Meng ,  Shawming Ma ,  Michael X. Yang

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67213 ,  H01J37/32357 ,  H01J37/32449 ,  H01L21/67023

Abstract: Processes and apparatuses for the treatment of semiconductor workpieces are provided. In some embodiments, a method can include placing the workpiece into a process chamber; vaporizing a solvent to create a vaporized solvent; introducing the vaporized solvent into the process chamber; and exposing the workpiece to the vaporized solvent.

公开(公告)号：US10269574B1

公开(公告)日：2019-04-23

申请号：US15958601

申请日：2018-04-20

Applicant: Mattson Technology, Inc.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/30 ,  B01D67/00 ,  C23F1/12 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/302 ,  C23C16/452

Abstract: Surface treatment processes for treating a workpiece with organic radicals are provided. In one example implementation, a method for processing a workpiece having a semiconductor material and a carbon containing layer (e.g., photoresist) can include a surface treatment process on the workpiece. The surface treatment process can include generating one or more species in a first chamber (e.g., a plasma chamber). The surface treatment process can include mixing one or more hydrocarbon radicals with the species to create a mixture. The surface treatment process can include exposing the carbon containing layer to the mixture in a second chamber (e.g., a processing chamber).

公开(公告)号：US20190103280A1

公开(公告)日：2019-04-04

申请号：US15958601

申请日：2018-04-20

Applicant: Mattson Technology, Inc.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/30 ,  C23C16/452 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/302

Abstract: Surface treatment processes for treating a workpiece with organic radicals are provided. In one example implementation, a method for processing a workpiece having a semiconductor material and a carbon containing layer (e.g., photoresist) can include a surface treatment process on the workpiece. The surface treatment process can include generating one or more species in a first chamber (e.g., a plasma chamber). The surface treatment process can include mixing one or more hydrocarbon radicals with the species to create a mixture. The surface treatment process can include exposing the carbon containing layer to the mixture in a second chamber (e.g., a processing chamber).

公开(公告)号：US20190103279A1

公开(公告)日：2019-04-04

申请号：US15958560

申请日：2018-04-20

Applicant: Mattson Technology, Inc.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/30 ,  H01L21/02 ,  H01L21/311 ,  H01L21/302 ,  C23C16/452

CPC classification number: H01L21/3003 ,  B01D67/009 ,  C23C16/452 ,  C23F1/12 ,  H01J37/321 ,  H01J37/32743 ,  H01J37/32899 ,  H01J2237/006 ,  H01J2237/332 ,  H01L21/02118 ,  H01L21/02252 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/0271 ,  H01L21/302 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/76826

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include performing an organic radical based surface treatment process on a workpiece. The organic radical based surface treatment process can include generating one or more species in a first chamber. The surface treatment process can include mixing one or more hydrocarbon molecules with the species to create a mixture. The mixture can include one or more organic radicals. The surface treatment process can include exposing a semiconductor material on the workpiece to the mixture in a second chamber.

公开(公告)号：US20240387205A1

公开(公告)日：2024-11-21

申请号：US18787295

申请日：2024-07-29

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Rolf Bremensdorfer ,  Johannes Keppler ,  Michael X. Yang ,  Thorsten Hülsmann

IPC: H01L21/67 ,  H01L21/324 ,  H01L21/687

Abstract: Support plates for localized heating in thermal processing systems to uniformly heat workpieces are provided. In one example implementation, localized heating is achieved by modifying a heat transmittance of a support plate such that one or more portions of the support plate proximate the areas that cause cold spots transmit more heat than the rest of the support plate. For example, the one or more portions (e.g., areas proximate to one or more support pins) of the support plate have a higher heat transmittance (e.g., a higher optical transmission) than the rest of the support plate. In another example implementation, localized heating is achieved by heating a workpiece via a coherent light source through a transmissive support structure (e.g., one or more support pins, or a ring support) in addition to heating the workpiece globally by light from heat sources.

公开(公告)号：US12080568B2

公开(公告)日：2024-09-03

申请号：US18074713

申请日：2022-12-05

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Rolf Bremensdorfer ,  Johannes Keppler ,  Michael X. Yang ,  Thorsten Hülsmann

IPC: H01L21/67 ,  H01L21/324 ,  H01L21/687

CPC classification number: H01L21/67115 ,  H01L21/324 ,  H01L21/68742 ,  H01L21/6875 ,  H01L21/68757

Abstract: Support plates for localized heating in thermal processing systems to uniformly heat workpieces are provided. In one example implementation, localized heating is achieved by modifying a heat transmittance of a support plate such that one or more portions of the support plate proximate the areas that cause cold spots transmit more heat than the rest of the support plate. For example, the one or more portions (e.g., areas proximate to one or more support pins) of the support plate have a higher heat transmittance (e.g., a higher optical transmission) than the rest of the support plate. In another example implementation, localized heating is achieved by heating a workpiece via a coherent light source through a transmissive support structure (e.g., one or more support pins, or a ring support) in addition to heating the workpiece globally by light from heat sources.

公开(公告)号：US11387115B2

公开(公告)日：2022-07-12

申请号：US16716585

申请日：2019-12-17

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Chun Yan ,  Tsai Wen Sung ,  Sio On Lo ,  Hua Chung ,  Michael X. Yang

IPC: H01L21/3065 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/033 ,  H01L29/66 ,  H01L21/67 ,  H01J37/32 ,  H01L21/28

Abstract: Apparatus, systems, and methods for conducting a silicon containing material removal process on a workpiece are provided. In one example implementation, the method can include generating species from a process gas in a first chamber using an inductive coupling element. The method can include introducing a fluorine containing gas with the species to create a mixture. The mixture can include exposing a silicon structure of the workpiece to the mixture to remove at least a portion of the silicon structure.