公开(公告)号：US07736833B2

公开(公告)日：2010-06-15

申请号：US11906391

申请日：2007-10-02

申请人： Marie Angelopoulos ,  Katherina E. Babich ,  Douglas Charles LaTulipe ,  Qinghuang Lin ,  David R. Medeiros ,  Wayne Martin Moreau ,  Karen E. Petrillo ,  John P. Simons

发明人： Marie Angelopoulos ,  Katherina E. Babich ,  Douglas Charles LaTulipe ,  Qinghuang Lin ,  David R. Medeiros ,  Wayne Martin Moreau ,  Karen E. Petrillo ,  John P. Simons

IPC分类号： G03F7/004 ,  G03F7/30

CPC分类号： G03F7/091 ,  G03F7/0757 ,  G03F7/094 ,  G03F7/405 ,  Y10S430/145

摘要： Multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibiting high resolution, residue free lithography and methods of preparing these materials.

摘要翻译： 包括双层和顶面成像的多层抗蚀剂结构，其利用调节的作为ARC，平坦化层和耐蚀刻硬质掩模的底层，其特性如光学，化学和物理性质被定制以提供表现出高分辨率，无残留光刻的多层抗蚀剂结构 以及制备这些材料的方法。

公开(公告)号：US20090291389A1

公开(公告)日：2009-11-26

申请号：US12126287

申请日：2008-05-23

申请人： Robert D. Allen ,  Phillip Joe Brock ,  Blake W. Davis ,  Geraud Jean-Michel Dubois ,  Qinghuang Lin ,  Robert D. Miller ,  Alshakim Nelson ,  Sampath Purushothaman ,  Ratnam Sooriyakumaran

发明人： Robert D. Allen ,  Phillip Joe Brock ,  Blake W. Davis ,  Geraud Jean-Michel Dubois ,  Qinghuang Lin ,  Robert D. Miller ,  Alshakim Nelson ,  Sampath Purushothaman ,  Ratnam Sooriyakumaran

IPC分类号： G03F7/075 ,  C08G77/12 ,  G03F7/20

CPC分类号： G03F7/0757 ,  C08L83/14 ,  G03F7/0758 ,  G03F7/38 ,  G03F7/40 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/12 ,  Y10S430/122 ,  Y10S430/126 ,  C08L83/00

摘要： A method and a composition. The composition includes at least one carbosilane-substituted silsesquioxane polymer which crosslinks in the presence of an acid. The at least one carbosilane-substituted silsesquioxane polymer is soluble in aqueous base. The method includes forming a coating on a substrate. The coating includes one or more carbosilane-substituted silsesquioxane polymers. The carbosilane-substituted silsesquioxane polymer is soluble in aqueous base. The coating is exposed to radiation, resulting in generating a latent pattern in the coating. The exposed coating is baked at a first temperature less than about 150° C. The baked coating is developed, resulting in forming a latent image from the latent pattern in the baked coating. The latent image is cured at a second temperature less than about 500° C.

摘要翻译： 方法和组成。 该组合物包括在酸存在下交联的至少一种碳硅烷取代的倍半硅氧烷聚合物。 所述至少一种碳硅烷取代的倍半硅氧烷聚合物可溶于碱水溶液。 该方法包括在基底上形成涂层。 涂层包括一种或多种碳硅烷取代的倍半硅氧烷聚合物。 碳硅烷取代的倍半硅氧烷聚合物可溶于碱水溶液。 涂层暴露于辐射，导致在涂层中产生潜在图案。 暴露的涂层在小于约150℃的第一温度下烘烤。烘烤的涂层被显影，从而在烘烤涂层中从潜在图案形成潜像。 潜像在低于约500℃的第二温度下固化

公开(公告)号：US20090079076A1

公开(公告)日：2009-03-26

申请号：US11858636

申请日：2007-09-20

申请人： Qinghuang Lin ,  Deborah A. Neumayer

发明人： Qinghuang Lin ,  Deborah A. Neumayer

IPC分类号： H01L23/52 ,  H01L21/4763

CPC分类号： H01L21/76808 ,  H01L21/02118 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/0276 ,  H01L21/31 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3148 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76843 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： The present invention provides a method of fabricating an interconnect structure in which a patternable low-k material replaces the need for utilizing a separate photoresist and a dielectric material. Specifically, this invention relates to a simplified method of fabricating single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric and at least one inorganic antireflective coating. In general terms, a method is provided that includes providing at least one patternable low-k material on a surface of an inorganic antireflective coating that is located atop a substrate, said inorganic antireflective coating is vapor deposited and comprises atoms of M, C and H wherein M is at least one of Si, Ge, B, Sn, Fe, Ta, Ti, Ni, Hf and La; forming at least one interconnect pattern within the at least one patternable low-k material; and curing the at least one patternable low-k material. The inventive method can be used to form dual-damascene interconnect structures as well as single-damascene interconnect structures.

摘要翻译： 本发明提供一种制造互连结构的方法，其中可图案化的低k材料替代了使用单独的光致抗蚀剂和电介质材料的需要。 具体地说，本发明涉及一种制备具有至少一个可图案化的低k电介质和至少一种无机抗反射涂层的单镶嵌和双镶嵌低k互连结构的简化方法。 一般来说，提供了一种方法，其包括在位于基底顶部的无机抗反射涂层的表面上提供至少一种可图案化的低k材料，所述无机抗反射涂层被气相沉积并包含M，C和H原子 其中M是Si，Ge，B，Sn，Fe，Ta，Ti，Ni，Hf和La中的至少一种; 在所述至少一个可编码的低k材料内形成至少一个互连图案; 以及固化所述至少一种可图案化的低k材料。 本发明的方法可用于形成双镶嵌互连结构以及单镶嵌互连结构。

公开(公告)号：US20090023284A1

公开(公告)日：2009-01-22

申请号：US11778876

申请日：2007-07-17

申请人： Qinghuang Lin ,  Sampath Purushothaman ,  Robert Wisnieff

发明人： Qinghuang Lin ,  Sampath Purushothaman ,  Robert Wisnieff

IPC分类号： H01L21/4763 ,  C21D1/00

CPC分类号： H01L21/76802 ,  F27B17/0025 ,  H01L21/67115 ,  H01L21/67173 ,  H01L21/67225 ,  H01L21/76814 ,  H01L21/76825

摘要： The present disclosure relates to an integrated wafer processing apparatus for fabricating semiconductor chips. This integrated wafer processing system combines the lithography patterning steps and irradiation curing steps of the patternable dielectric into one system. The patternable low-k material of the present disclosure also functions as a photoresist, i.e. is a photo-patternable low-k dielectric material.

摘要翻译： 本公开涉及一种用于制造半导体芯片的集成晶片处理装置。 该集成晶片处理系统将可图案化电介质的光刻图案化步骤和照射固化步骤组合成一个系统。 本公开的可图案化的低k材料还起到光致抗蚀剂的作用，即光可图案化的低k电介质材料。

公开(公告)号：US07446058B2

公开(公告)日：2008-11-04

申请号：US11440984

申请日：2006-05-25

申请人： Chih-Chao Yang ,  Griselda Bonilla ,  Qinghuang Lin ,  Terry A. Spooner

发明人： Chih-Chao Yang ,  Griselda Bonilla ,  Qinghuang Lin ,  Terry A. Spooner

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L23/53295 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure and method of fabricating the same in which the adhesion between a chemically etched dielectric material and a noble metal liner is improved are provided. In accordance with the present invention, a chemically etching dielectric material is subjected to a treatment step which modified the chemical nature of the dielectric material such that the treated surfaces become hydrophobic. The treatment step is performed prior to deposition of the noble metal liner and aides in improving the adhesion between the chemically etched dielectric material and the noble metal liner.

摘要翻译： 提供了一种互连结构及其制造方法，其中改善了化学蚀刻的电介质材料和贵金属衬垫之间的粘合性。 根据本发明，对化学蚀刻电介质材料进行改性电介质材料的化学性质使处理后的表面变得疏水的处理步骤。 在沉积贵金属衬垫和助剂以改善化学蚀刻的电介质材料和贵金属衬垫之间的粘附性之前进行处理步骤。

公开(公告)号：US20080124650A1

公开(公告)日：2008-05-29

申请号：US11906391

申请日：2007-10-02

申请人： Marie Angelopoulos ,  Katherina E. Babich ,  Douglas Charles Latulipe ,  Qinghuang Lin ,  David R. Medeiros ,  Wayne Martin Moreau ,  Karen E. Petrillo ,  John P. Simons

发明人： Marie Angelopoulos ,  Katherina E. Babich ,  Douglas Charles Latulipe ,  Qinghuang Lin ,  David R. Medeiros ,  Wayne Martin Moreau ,  Karen E. Petrillo ,  John P. Simons

IPC分类号： G03F7/004

CPC分类号： G03F7/091 ,  G03F7/0757 ,  G03F7/094 ,  G03F7/405 ,  Y10S430/145

摘要： Multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibiting high resolution, residue free lithography and methods of preparing these materials.

摘要翻译： 包括双层和顶面成像的多层抗蚀剂结构，其利用调节的作为ARC，平坦化层和耐蚀刻硬质掩模的底层，其特性如光学，化学和物理性质被定制以提供表现出高分辨率，无残留光刻的多层抗蚀剂结构 以及制备这些材料的方法。

公开(公告)号：US20060183314A1

公开(公告)日：2006-08-17

申请号：US10908931

申请日：2005-06-01

申请人： Ronald Dellaguardia ,  Elbert Huang ,  Qinghuang Lin ,  Robert Miller

发明人： Ronald Dellaguardia ,  Elbert Huang ,  Qinghuang Lin ,  Robert Miller

IPC分类号： H01L21/4763

CPC分类号： H01L21/76835 ,  H01L21/76808 ,  H01L21/76829

摘要： Methods to form interconnect structures utilizing sacrificial filling material layers are described herein. Utilizing the sacrificial filling material makes it possible to reduce damage to interlayer dielectric layers that result in enhanced device performance and/or increased reliability.

摘要翻译： 本文描述了利用牺牲填充材料层形成互连结构的方法。 利用牺牲填充材料使得可以减少导致增强的器件性能和/或增加的可靠性的层间电介质层的损伤。

公开(公告)号：US06258732B1

公开(公告)日：2001-07-10

申请号：US09244936

申请日：1999-02-04

申请人： Qinghuang Lin ,  Rebecca D. Mih ,  Kevin S. Petrarca

发明人： Qinghuang Lin ,  Rebecca D. Mih ,  Kevin S. Petrarca

IPC分类号： H01L21469

CPC分类号： H01L21/0335 ,  H01L21/31138 ,  H01L21/31144

摘要： An organic dielectric material is patterned on a substrate in a process utilizing a patterned resist which contains a metalloid or metallic element at the time of pattern transfer to the organic dielectric layer. The organic dielectric layer is preferably patterned using an oxygen etching process, most preferably oxygen reactive ion etching. The process advantageously avoids the need for a hard mask.

摘要翻译： 有机电介质材料在图案转移到有机电介质层时利用包含准金属或金属元素的图案化抗蚀剂的工艺在衬底上图案化。 有机介电层优选使用氧蚀刻工艺，最优选氧反应离子蚀刻来图案化。 该方法有利地避免了对硬掩模的需要。

公开(公告)号：US09472450B2

公开(公告)日：2016-10-18

申请号：US13468693

申请日：2012-05-10

申请人： Griselda Bonilla ,  Christos D. Dimitrakopoulos ,  Alfred Grill ,  James B. Hannon ,  Qinghuang Lin ,  Deborah A. Neumayer ,  Satoshi Oida ,  John A. Ott ,  Dirk Pfeiffer

发明人： Griselda Bonilla ,  Christos D. Dimitrakopoulos ,  Alfred Grill ,  James B. Hannon ,  Qinghuang Lin ,  Deborah A. Neumayer ,  Satoshi Oida ,  John A. Ott ,  Dirk Pfeiffer

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L21/76877 ,  H01L21/76835 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76852 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material.

摘要翻译： 提供了包括位于铜结构的暴露表面上的石墨烯盖的互连结构。 在一些实施例中，石墨烯盖仅位于铜结构的最上表面的顶部，而在其它实施例中，石墨烯盖位于垂直侧壁和铜结构的最上表面的顶部。 铜结构位于电介质材料内。

公开(公告)号：US08470516B2

公开(公告)日：2013-06-25

申请号：US12542821

申请日：2009-08-18

申请人： Robert D. Allen ,  Luisa Bozano ,  Phillip Brock ,  Qinghuang Lin ,  Alshakim Nelson ,  Ratnam Sooriyakumaran

发明人： Robert D. Allen ,  Luisa Bozano ,  Phillip Brock ,  Qinghuang Lin ,  Alshakim Nelson ,  Ratnam Sooriyakumaran

IPC分类号： G03F7/00 ,  G03F7/26

CPC分类号： G03F7/038 ,  G03F7/0757 ,  G03F7/2059 ,  G03F7/40

摘要： A method of generating a relief pattern comprises disposing a resist composition on a substrate to form a film, the resist composition comprising a first silsesquioxane polymer of the formula (1): a second silsesquioxane polymer of the formula (2): and a photosensitive acid generator; patternwise exposing the film by e-beam lithography; heating the exposed film to effect crosslinking of the first polymer and second polymer in the exposed area; and developing the exposed film to form a negative relief pattern.

摘要翻译： 产生浮雕图案的方法包括将抗蚀剂组合物设置在基底上以形成膜，抗蚀剂组合物包含式（1）的第一倍半硅氧烷聚合物：式（2）的第二倍半硅氧烷聚合物：和光敏酸 发电机; 通过电子束光刻对图案进行图案曝光; 加热暴露的膜以在暴露的区域中实现第一聚合物和第二聚合物的交联; 并将曝光的胶片显影形成负浮雕图案。