公开(公告)号：US20090294922A1

公开(公告)日：2009-12-03

申请号：US12472645

申请日：2009-05-27

申请人： Yoshitaka Hamada ,  Fujio Yagihashi ,  Takeshi Asano ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Yoshitaka Hamada ,  Fujio Yagihashi ,  Takeshi Asano ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： H01L23/58 ,  H01L21/47 ,  C07F7/08 ,  B32B9/00

CPC分类号： H01L21/31695 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  Y10T428/2995

摘要： Provided is an organic silicon oxide fine particle capable of satisfying an expected dielectric constant and mechanical strength and having excellent chemical stability for obtaining a high-performance porous insulating film. More specifically, provided is an organic silicon oxide fine particle comprising a core comprising an inorganic silicon oxide or a first organic silicon oxide containing an organic group having a carbon atom directly attached to a silicon atom and, and a shell on or above an outer circumference of the core, the shell comprising a second organic silicon oxide different from the first organic silicon oxide which the second organic silicon has been formed by hydrolysis and condensation, in the presence of a basic catalyst, of a shell-forming component comprising an organic-group-containing hydrolyzable silane containing an organic group having a carbon atom directly attached to a silicon atom or a mixture of the organic-group-containing hydrolyzable silane and an organic-group-free hydrolyzable silane not having the organic group, wherein a ratio [C]/[Si] is 0 or greater but less than 1 in the core and 1 or greater 1 in the shell wherein [C] represents the number of all the carbon atoms and [Si] represents the number of all the silicon atoms.

摘要翻译： 提供一种能够满足预期介电常数和机械强度并且具有优异的化学稳定性以获得高性能多孔绝缘膜的有机氧化硅细颗粒。 更具体地说，提供了一种有机氧化硅微粒，其包括含有无机氧化硅或含有直接连接到硅原子的碳原子的有机基团的第一有机氧化硅的芯，以及在外周上或上方的壳 所述壳包含不同于所述第一有机氧化硅的第二有机氧化硅，所述第二有机氧化硅通过在碱性催化剂的存在下通过水解和缩合形成第二有机硅，所述成壳组分包含有机 - 含有具有与硅原子直接连接的碳原子的有机基团的含有基团的可水解硅烷或含有机基的可水解硅烷和不具有有机基团的可水解硅烷的混合物，其中[ C] / [Si]在核中为0以上且小于1，在壳中为1以上1，[C]表示全部碳原子数a nd [Si]表示所有硅原子的数目。

公开(公告)号：US07550247B2

公开(公告)日：2009-06-23

申请号：US11205980

申请日：2005-08-18

申请人： Mutsuo Nakashima ,  Yoshitaka Hamada ,  Katsuya Takemura ,  Kazumi Noda ,  Toshihiko Fujii

发明人： Mutsuo Nakashima ,  Yoshitaka Hamada ,  Katsuya Takemura ,  Kazumi Noda ,  Toshihiko Fujii

IPC分类号： G03C1/73 ,  G03F7/039 ,  G03F7/20 ,  G03F7/36

CPC分类号： G03F7/0757 ,  G03F7/0045 ,  Y10S430/108

摘要： A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing an organic group having a hydroxyl group and having at least 3 fluorine atoms, in total, on a proximate carbon atom, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.

摘要翻译： 提供了包含有机硅树脂，光酸产生剂，含氮有机化合物和溶剂的抗蚀剂组合物。 有机硅树脂通过在近邻碳原子上含有具有羟基并且具有至少3个氟原子的有机基团的三种硅烷单体的混合物的共水解缩合获得，所述有机基团具有羧基被保护的有机基团 酸不稳定基团和含内酯环的有机基团。 抗蚀剂组合物具有令人满意的分辨率，并且克服了在氧反应蚀刻期间抗蚀剂膜和有机膜之间的选择性蚀刻比低的问题。

公开(公告)号：US07541134B2

公开(公告)日：2009-06-02

申请号：US11150565

申请日：2005-06-10

申请人： Motoaki Iwabuchi ,  Yoshitaka Hamada ,  Tsutomu Ogihara ,  Takeshi Asano ,  Takafumi Ueda ,  Dirk Pfeiffer

发明人： Motoaki Iwabuchi ,  Yoshitaka Hamada ,  Tsutomu Ogihara ,  Takeshi Asano ,  Takafumi Ueda ,  Dirk Pfeiffer

IPC分类号： G03F7/11 ,  G03F7/039 ,  G03F7/095

CPC分类号： G03F7/091 ,  Y10S438/952

摘要： The present invention provides a material for an antireflective film characterized by high etching selectivity with respect to a resist, that is, which has a fast etching speed when compared to the resist, and in addition, can be removed without damage to a film which is to be processed. The present invention also provides a pattern formation method for forming an antireflective film layer on a substrate using this antireflective film-forming composition, and a pattern formation method that uses this antireflective film as a hard mask, and a pattern formation method that uses this antireflective film as a hard mask for processing the substrate. The present invention also provides an antireflective film-forming composition comprising an organic solvent, a cross linking agent, and a polymer comprising a light absorbing group obtained by hydrolyzing and condensing more than one type of silicon compound, a crosslinking group and a non-crosslinking group.

摘要翻译： 本发明提供了一种抗反射膜的材料，其特征在于相对于抗蚀剂具有高蚀刻选择性，即与抗蚀剂相比具有快的蚀刻速度，并且还可以除去不损坏膜的膜 待处理。 本发明还提供了使用该防反射膜形成组合物在基板上形成抗反射膜层的图案形成方法，以及使用该抗反射膜作为硬掩模的图案形成方法以及使用该抗反射膜的图案形成方法 膜作为加工基材的硬掩模。 本发明还提供一种抗反射膜形成组合物，其包含有机溶剂，交联剂和包含通过水解和缩合多于一种硅化合物，交联基团和非交联的光吸收基团的聚合物 组。

公开(公告)号：US20090053906A1

公开(公告)日：2009-02-26

申请号：US12087779

申请日：2007-07-19

申请人： Hironobu Miya ,  Kazuhiro Hirahara ,  Yoshitaka Hamada ,  Atsuhiko Suda

发明人： Hironobu Miya ,  Kazuhiro Hirahara ,  Yoshitaka Hamada ,  Atsuhiko Suda

IPC分类号： H01L21/316 ,  B05C11/00

CPC分类号： H01L21/3141 ,  C23C16/40 ,  C23C16/45527 ,  C23C16/45546 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31612 ,  H01L21/31645

摘要： Disclosed is a producing method of a semiconductor device including: loading at least one substrate into a processing chamber; forming a metal oxide film or a silicon oxide film on a surface of the substrate by repeatedly supplying a metal compound or a silicon compound, each of which is a first material, an oxide material which is a second material including an oxygen atom, and a hydride material which is a third material, into the processing chamber predetermined times; and unloading the substrate from the processing chamber.

摘要翻译： 公开了一种半导体器件的制造方法，包括：将至少一个衬底装载到处理室中; 通过重复地供给作为第一材料的金属化合物或硅化合物，作为包含氧原子的第二材料的氧化物材料，在基板的表面上形成金属氧化物膜或氧化硅膜， 作为第三材料的氢化物材料预定时间进入处理室; 并从处理室卸载基板。

公开(公告)号：US20090035424A1

公开(公告)日：2009-02-05

申请号：US11887825

申请日：2006-04-04

申请人： Kozo Mita ,  Yoshitaka Hamada ,  Atsuko Takahagi ,  Shin Yamada

发明人： Kozo Mita ,  Yoshitaka Hamada ,  Atsuko Takahagi ,  Shin Yamada

IPC分类号： B65D81/34 ,  B65D30/16 ,  B65D33/01

CPC分类号： B65D75/26 ,  B32B27/08 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B65D77/225 ,  B65D81/3461

摘要： A packaging bag for microwave oven heating, is manufactured by using a complex film at least one side of which comprises a sealant layer, folding the complex film or placing the complex films one upon another so as to encounter the sealant layers to each other, sealing the peripheral of the overlapped complex films by a main seal part to form a sealed bag, and providing in the bag a region which is isolated from a space for storing contents by a steam port seal part. The steam port seal part surrounds a steam easy permeable element. The lamination strength between the layers of the complex film in hot condition is not less than 1.5 N/15 mm in width, and the seal strength at least at the steam port seal part in hot condition is not more than 28 N/15 mm in width.

摘要翻译： 用于微波炉加热的包装袋通过使用复合膜制造，复合膜的至少一面包括密封剂层，折叠复合膜或将复合膜彼此叠置以便彼此相遇密封剂层，密封 通过主密封部分重叠复合膜的周边以形成密封袋，并且在袋中提供与通过蒸汽口密封部分存储内容物的空间隔离的区域。 蒸汽口密封件围绕蒸汽易渗透元件。 复合膜在热状态下的层压强度不小于1.5N / 15mm，热状态下至少在蒸汽口密封部分的密封强度不超过28N / 15mm 宽度。

公开(公告)号：US20080292863A1

公开(公告)日：2008-11-27

申请号：US12029566

申请日：2008-02-12

申请人： Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： B32B3/26 ,  C08G77/26 ,  C08G77/08

CPC分类号： C08G77/08 ,  C08G77/045 ,  C09D183/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31695 ,  H01L21/7682 ,  Y10T428/249953

摘要： Provided is a method for preparing a siloxane polymer by hydrolysis and condensation reactions of a hydrolyzable silane compound, which has a step of preparing a salt of a silsesquioxane cage compound represented by the following formula (1): (SiO1.5—O)nn−X+n   (1) wherein, X represents NR4, Rs may be the same or different and each represents a linear or branched C1-4 alkyl group and n is an integer from 6 to 24 and a step of hydrolyzing and condensing the hydrolyzable silane compound with the salt of a silsesquioxane cage compound.

摘要翻译： 本发明提供一种通过水解性缩合反应制备硅氧烷聚合物的方法，该水解性硅烷化合物具有制备由下式（1）表示的倍半硅氧烷笼形化合物的盐的步骤： （“In-line Formula”）end =“lead”？>（SiO1.5-O）nn-X + n（1）<？in-line-formula description =“In-line Formulas”end =“tail”？ >其中，X表示NR4，Rs可以相同或不同，表示直链或支链C 1-4烷基，n表示6〜24的整数，将可水解硅烷化合物与 倍半硅氧烷笼形化合物。

公开(公告)号：US07385021B2

公开(公告)日：2008-06-10

申请号：US11148161

申请日：2005-06-09

申请人： Yoshitaka Hamada ,  Tsutomu Ogihara ,  Motoaki Iwabuchi ,  Takeshi Asano ,  Takafumi Ueda

发明人： Yoshitaka Hamada ,  Tsutomu Ogihara ,  Motoaki Iwabuchi ,  Takeshi Asano ,  Takafumi Ueda

IPC分类号： C08G77/08

CPC分类号： G03F7/0752 ,  C08K5/0025 ,  C08L83/06 ,  G03F7/091 ,  G03F7/11 ,  C08L2666/28

摘要： A sacrificial film-forming composition is provided comprising (A) an organofunctional silicone resin which is a co-hydrolytic condensate of hydrolyzable silanes having formula (1) and formula (2) and/or (3): X—Y—SiZ3   (1) RnSiZ4-n   (2) P—SiZ3   (3) wherein Z is a hydrolyzable group, X is a crosslinkable organofunctional group, Y is a single bond or a divalent hydrocarbon group, R is hydrogen or a monovalent hydrocarbon group, n is an integer of 0-3, and P is a substituent group which readily decomposes and volatilizes upon thermal decomposition, (B) a crosslinking agent, (C) an acid generator, (D) an extender or porogen, and (E) an organic solvent. The composition has improved storage stability, filling properties, adhesion and coating uniformity sufficient to form a sacrificial film which is effectively dissolvable in a stripping solution.

摘要翻译： 提供了牺牲成膜组合物，其包含（A）有机官能有机硅树脂，其为具有式（1）和式（2）和/或（3）的可水解硅烷的共水解缩合物：<β直列式 描述=“在线公式”end =“lead”？> XY-SiZ 3（1）<？in-line-formula description =“In-line Formulas”end =“tail”？ > <？in-line-formula description =“In-line Formulas”end =“lead”？> R SiZ 4-n（2） line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> P-SiZ <3 >（3）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中Z是可水解基团，X是可交联的有机官能团，Y是单键或二价烃基 ，R为氢或一价烃基，n为0-3的整数，P为在热分解时容易分解挥发的取代基，（B）交联剂，（C）aci （D）增量剂或致孔剂，和（E）有机溶剂。 该组合物具有提高的储存稳定性，填充性能，粘附性和涂层均匀性，足以形成有效地溶解在剥离溶液中的牺牲膜。

公开(公告)号：US07265234B2

公开(公告)日：2007-09-04

申请号：US11393911

申请日：2006-03-31

申请人： Yoshitaka Hamada ,  Mutsuo Nakashima

发明人： Yoshitaka Hamada ,  Mutsuo Nakashima

IPC分类号： C07F7/00 ,  G03C1/76

CPC分类号： G03F7/0757 ,  C08G77/045 ,  G03F7/0045 ,  H01L21/3122

摘要： A silsesquioxane compound mixture having a high proportion of silsesquioxane compounds bearing bulky substituent groups on side chain and having a degree of condensation of substantially 100% is prepared by a first stage wherein a silane feed comprising a trifunctional silane bearing a bulky substituent group on side chain represented by formula (1): wherein Y is an aliphatic or aromatic organic group optionally having a functional group, X1, X2 and X3 are H, halogen, alkoxy or aryloxy is hydrolyzed in the presence of an acid or base catalyst, and a second stage wherein dehydrating condensation is carried out in the presence of a strong base catalyst while removing the water resulting from condensation out of the reaction system.

摘要翻译： 通过第一阶段制备具有高比例的在侧链上具有大体积取代基且具有基本上100％的缩合度的倍半硅氧烷化合物的倍半硅氧烷化合物混合物，其中包含在侧链上具有大体积取代基的三官能硅烷的硅烷进料 由式（1）表示：其中Y是任选具有官能团的脂族或芳族有机基团，X 1，X 2和X 3 O 在酸或碱催化剂的存在下，H，卤素，烷氧基或芳氧基被水解，第二步是在强碱催化剂的存在下进行脱水缩合，同时除去由反应物凝结出来的水 系统。

公开(公告)号：US07239018B2

公开(公告)日：2007-07-03

申请号：US10796656

申请日：2004-03-09

申请人： Yoshitaka Hamada ,  Fujio Yagihashi ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Yoshitaka Hamada ,  Fujio Yagihashi ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： H01L23/52 ,  H01L21/473

CPC分类号： H01L23/52 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/7682

摘要： Provided is a composition formed by hydrolysis and condensation composition of the alkoxysilane, the composition comprising a reduced amount of metallic and halogen impurities and being applicable as electronic material. Also provided is an insulating film having low dielectric constant produced by applying the composition and sintering it. More specifically, a method for manufacturing a composition for forming a film, comprising a step of hydrolysis and condensation of alkoxysilane or a partial hydrolysis product of the alkoxysilane in an organic solvent in the presence of trialkylmethylammonium hydroxide as catalyst, wherein the alkoxysilane is selected from the groups consisting of compounds represented by formulae (1) to (4) below, and the trialkylmethylammonium hydroxide is represented by formula (5) below. Provided are a composition for forming a film obtained by the method, and a low dielectric constant film having low metallic and halogen impurities, the film produced by applying the composition for forming a film on a substrate and sintering it.

摘要翻译： 提供通过烷氧基硅烷的水解和缩合组合物形成的组合物，该组合物包含减少量的金属和卤素杂质并可用作电子材料。 还提供了通过施加组合物并烧结而制备的具有低介电常数的绝缘膜。 更具体地说，涉及一种用于形成膜的组合物的制造方法，其特征在于，在三烷基甲基氢氧化铵作为催化剂的存在下，包括在有机溶剂中烷氧基硅烷或部分水解产物的烷氧基硅烷的水解和缩合的步骤，其中烷氧基硅烷选自 由下式（1）〜（4）表示的化合物和氢氧化三烷基甲基铵组成的基团由下式（5）表示。 提供了一种用于形成通过该方法获得的膜的组合物和具有低金属和卤素杂质的低介电常数膜，该膜通过将在膜上形成膜的组合物施加并烧结而制备。

公开(公告)号：US20070135565A1

公开(公告)日：2007-06-14

申请号：US11549731

申请日：2006-10-16

申请人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： C08L83/04

CPC分类号： C09D183/14 ,  C08G77/08 ,  C08K5/19 ,  C09D183/04 ,  C23C18/1212 ,  C23C18/122 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31695 ,  Y10T428/31663

摘要： Provided are a composition for forming film which can form porous film excelling in dielectric constant, adhesiveness, uniformity of the film, mechanical strength and having low hygroscopicity; porous film and a method for forming the film; and a high-performing and highly reliable semiconductor device comprising the porous film inside. More specifically, provided is a composition for forming porous film, the composition comprising siloxane polymer and one or more quaternary ammonium salts represented by following formula (1) or (2): [(R1)4N]+[R2X]−  (1) Hk[(R1)4N]m+Yn−  (2) wherein X represents CO2, OSO3 or SO3; Y represents SO4, SO3, CO3, O2C—CO2, NO3 or NO2; and k is 0 or 1, m is 1 or 2 and n is 1 or 2 in proviso that n=1 requires k=0 and m=1, and n=2 requires k=0 and m=2, or k=1 and m=1.

摘要翻译： 提供一种形成膜的组合物，其可以形成介电常数，粘合性，膜均匀性，机械强度和吸湿性低的多孔膜; 多孔膜和形成膜的方法; 以及内部具有多孔膜的高性能，高可靠性的半导体装置。 更具体地说，提供了一种用于形成多孔膜的组合物，该组合物包含硅氧烷聚合物和一种或多种由下式（1）或（2）表示的季铵盐：<？在线公式描述=“在线式 “end =”lead“？> [（R＆lt; 1＆lt; 1＆gt;）＆lt; 4＆lt; N＆gt;＆lt; （1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end = “铅”？> k k k>>>>>> / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / （2）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中X表示CO 2 2， OSO 3或SO 3 3; Y表示SO 4，SO 3，CO 3，O 2，CO 2， 3，NO 3或NO 2; 并且k为0或1，m为1或2，n为1或2，条件是n = 1需要k = 0且m = 1，n = 2需要k = 0且m = 2，或k = 1 m = 1。