利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

109 条记录 (耗时 0.029 秒)

    Optoelectric component
    63.
    发明授权
    Optoelectric component 失效
    光电元件

    公开(公告)号：US08785951B2

    公开(公告)日：2014-07-22

    申请号：US12737980

    申请日：2009-08-04

    申请人： Ralph Wirth

    发明人： Ralph Wirth

    IPC分类号： H01L33/50

    CPC分类号： H01L33/483 ,  H01L33/505 ,  H01L33/507 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An optoelectronic component (1) is specified, comprising a connection carrier (2) on which a radiation-emitting semiconductor chip (3) is arranged, and a conversion element (4) fixed to the connection carrier (2). The conversion element (4) spans the semiconductor chip (3) in such a way that the semiconductor chip (3) is surrounded by the conversion element (4) and the connection carrier (2), and the conversion element (4) consists of one of the following materials: ceramic, glass ceramic.

    摘要翻译： 规定了光电子部件（1），其包括布置有发射辐射半导体芯片（3）的连接载体（2）和固定到连接载体（2）的转换元件（4）。 转换元件（4）以半导体芯片（3）被转换元件（4）和连接载体（2）包围的方式跨越半导体芯片（3），转换元件（4）由 以下材料之一：陶瓷，玻璃陶瓷。

    OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND SCATTERING BODY
    64.
    发明申请
    OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND SCATTERING BODY 有权
    光电子半导体元件和散射体

    公开(公告)号：US20140175478A1

    公开(公告)日：2014-06-26

    申请号：US13817273

    申请日：2011-08-04

    申请人： Ralph Wirth

    发明人： Ralph Wirth

    IPC分类号： H01L33/58

    CPC分类号： H01L33/58 ,  G02B5/0278 ,  H01L33/44 ,  H01L33/56 ,  H01L2933/0091

    摘要： An optoelectronic semiconductor component includes one or a plurality of optoelectonic semiconductor chips, and at least one scattering body including a radiation-transmissive matrix material and embedded therein scattering particles composed of a particle material and which is disposed downstream of at least one of the semiconductor chips, wherein, in the event of a temperature change, a difference in refractive index between the matrix material and the particle material changes, and the difference in refractive index between the matrix material and the particle material at a temperature of 300 K is at most 0.15.

    摘要翻译： 光电子半导体部件包括一个或多个光电半导体芯片，以及至少一个散射体，其包括辐射透射基体材料，并且在其中嵌入由粒子材料构成的散射粒子，并且设置在至少一个半导体芯片的下游 其中，在温度变化的情况下，基体材料与粒子材料的折射率差发生变化，在300K的温度下，基体材料与粒子材料的折射率差在0.15以下 。

    OPTOELECTRONIC DEVICE
    67.
    发明申请
    OPTOELECTRONIC DEVICE 有权
    光电器件

    公开(公告)号：US20130088166A1

    公开(公告)日：2013-04-11

    申请号：US13637438

    申请日：2011-03-30

    申请人： Horst Varga ,  Ralph Wirth

    发明人： Horst Varga ,  Ralph Wirth

    IPC分类号： H05B37/02

    CPC分类号： H05B37/02 ,  H05B33/0872

    摘要： An optoelectronic device that radiates mixed light including a first semiconductor light source which radiates light in a first wavelength range at a first intensity, a second semiconductor light source which radiates light in a second wavelength range at a second intensity, a third semiconductor light source which radiates light in a third wavelength range at a third intensity, a resistance element having a temperature-dependent electrical resistance, and a semiconductor light source control element that controls the intensity of the third semiconductor light source.

    摘要翻译： 一种光电子器件，其辐射包括以第一强度辐射第一波长范围的光的第一半导体光源的混合光，以第二强度辐射第二波长范围的光的第二半导体光源，第三半导体光源， 在第三强度的第三波长范围内照射光，具有温度依赖性电阻的电阻元件以及控制第三半导体光源的强度的半导体光源控制元件。

    Optoelectronic Component and Method for Producing an Optoelectronic Component
    68.
    发明申请
    Optoelectronic Component and Method for Producing an Optoelectronic Component 有权
    光电子元件的制造方法

    公开(公告)号：US20130032820A1

    公开(公告)日：2013-02-07

    申请号：US13641650

    申请日：2011-03-18

    申请人： Ralph Wirth

    发明人： Ralph Wirth

    IPC分类号： H01L33/32 ,  H01L33/08

    CPC分类号： H01L25/0753 ,  H01L33/44 ,  H01L33/50 ,  H01L33/58 ,  H01L33/60 ,  H01L2224/48463 ,  H01L2933/0091

    摘要： The invention concerns an optoelectronic component (1) for mixing electromagnetic radiation having different wavelengths, more particularly in the far field. At least one first semiconductor chip (3) for emitting electromagnetic radiation in a first spectral range is provided on a carrier (2). Furthermore, at least one second semiconductor chip (4, 4a, 4b) for emitting electromagnetic radiation in a second spectral range is provided on the carrier (2). The first and the second spectral ranges differ from one another. The at least one first semiconductor chip (3) and the at least one second semiconductor chip (4, 4a, 4b) are arranged in a single package. The at least one first semiconductor chip (3) is optically isolated from the at least one second semiconductor chip (4, 4a, 4b) by a barrier (5). The at least one first semiconductor chip (3) and the at least one second semiconductor chip (4, 4a, 4b) are in each case arranged centosymmetrically about a common center o(Z) of symmetry.

    摘要翻译： 本发明涉及用于混合具有不同波长的电磁辐射的光电子部件（1），特别是在远场中。 用于在第一光谱范围内发射电磁辐射的至少一个第一半导体芯片（3）设置在载体（2）上。 此外，在载体（2）上设置用于在第二光谱范围内发射电磁辐射的至少一个第二半导体芯片（4,4a，4b）。 第一和第二光谱范围彼此不同。 至少一个第一半导体芯片（3）和至少一个第二半导体芯片（4,4a，4b）被布置在单个封装中。 所述至少一个第一半导体芯片（3）通过屏障（5）与所述至少一个第二半导体芯片（4,4a，4b）光学隔离。 在每种情况下，至少一个第一半导体芯片（3）和至少一个第二半导体芯片（4,4a，4b）围绕公共对称中心o（Z）中心对称地布置。

    Optoelectronic Semiconductor Chip
    69.
    发明申请
    Optoelectronic Semiconductor Chip 有权
    光电半导体芯片

    公开(公告)号：US20100264434A1

    公开(公告)日：2010-10-21

    申请号：US11992815

    申请日：2006-09-14

    申请人： Andreas Ploessl ,  Ralph Wirth

    发明人： Andreas Ploessl ,  Ralph Wirth

    IPC分类号： H01L33/46

    CPC分类号： H01L33/0079 ,  H01L33/10 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An optoelectronic semiconductor chip is disclosed which emits electromagnetic radiation from its front side (7) during operation, comprising a semiconductor layer sequence (1) having an active region (4) suitable for generating the electromagnetic radiation, and a separately produced TCO supporting substrate (10), which is arranged at the semiconductor layer sequence and has a material from the group of transparent conductive oxides (TCO) and mechanically supports the semiconductor layer sequence (1).

    摘要翻译： 公开了一种光电半导体芯片，其在操作期间从其前侧（7）发射电磁辐射，包括具有适于产生电磁辐射的有源区（4）的半导体层序列（1）和分开产生的TCO支撑衬底 10），其布置在半导体层序列处并且具有来自透明导电氧化物（TCO）的材料并且机械地支撑半导体层序列（1）。

    Radiation-emitting semiconductor chip and method for producing such a semiconductor chip
    70.
    发明授权
    Radiation-emitting semiconductor chip and method for producing such a semiconductor chip 有权
    辐射发射半导体芯片及其制造方法

    公开(公告)号：US07667240B2

    公开(公告)日：2010-02-23

    申请号：US10883270

    申请日：2004-06-30

    申请人： Michael Zoelfl ,  Wilhelm Stein ,  Ralph Wirth

    发明人： Michael Zoelfl ,  Wilhelm Stein ,  Ralph Wirth

    IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L33/00 ,  H01L21/00 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/44

    CPC分类号： H01L33/38 ,  H01L33/145 ,  H01L33/387

    摘要： A radiation-emitting semiconductor chip having an absorbent brightness setting layer between a connection region and a current injection region and/or, as seen from the connection region, outside the current injection region on a front-side radiation coupling-out area of the semiconductor layer sequence. The brightness setting layer absorbs in a targeted manner part of the radiation generated in the semiconductor layer sequence. In another embodiment, a partly insulating brightness setting layer is arranged between the connection region and the active layer. Here, the brightness setting layer includes at least one electrically insulating current blocking region and at least one electrically conductive current passage region via which the connection region is electrically conductively connected to the semiconductor layer sequence such that, during operation of the semiconductor chip, part of the electromagnetic radiation generated in the chip is generated below the connection region and is absorbed by the connection region.

    摘要翻译： 一种辐射发射半导体芯片，其具有在连接区域和电流注入区域之间的吸收性亮度设定层和/或从连接区域观察到半导体的前侧辐射耦合输出区域上的电流注入区域外部 层序列。 亮度设定层以目标方式吸收在半导体层序列中产生的辐射的一部分。 在另一实施例中，在连接区域和有源层之间布置部分绝缘的亮度设定层。 这里，亮度设定层包括至少一个电绝缘电流阻挡区域和至少一个导电电流通道区域，连接区域通过该至少一个导电电流通道区域导电连接到半导体层序列，使得在半导体芯片的操作期间， 芯片产生的电磁辐射在连接区域的下方产生，并被连接区域吸收。