公开(公告)号：US20210154918A1

公开(公告)日：2021-05-27

申请号：US17164456

申请日：2021-02-01

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Nikolaus Gmeinwieser ,  Norwin von Malm

IPC: B29C64/129 ,  H01L27/15 ,  H01L33/46 ,  B33Y30/00 ,  B29C64/295 ,  B29C64/264 ,  H01L33/32

Abstract: An optoelectronic semiconductor component and a 3D printer are disclosed. In an embodiment the component includes a carrier and a plurality of individually controllable pixels, wherein the pixels are mounted on the carrier and are formed from at least one semiconductor material, and wherein the pixels are configured to emit radiation having a wavelength of maximum intensity of 470 nm or less.

公开(公告)号：US11011683B2

公开(公告)日：2021-05-18

申请号：US16484767

申请日：2018-02-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： David O'Brien ,  Norwin von Malm ,  Jörg Frischeisen ,  Angela Eberhardt ,  Florian Peskoller

IPC: H01L33/50 ,  H01L33/00 ,  H01L33/32 ,  H01L33/44

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment, an optoelectronic component includes a semiconductor layer sequence having an active region configured to emit radiation at least via a main radiation exit surface and a conversion element arranged directly downstream of the main radiation exit surface, wherein the conversion element is substrate-free and includes a first layer, wherein the first layer includes at least one conversion material embedded in a matrix material, wherein the matrix material includes at least one condensed inorganic sol-gel material selected from the following group consisting of water glass, metal phosphate, aluminum phosphate, modified monoaluminum phosphate, monoaluminum phosphate, alkoxytetramethoxysilane, tetraethylorthosilicate, methyltrimethoxysilane, methyltriethoxysilane, titanium alkoxide, silica sol, metal alkoxide, metal oxane, metal alkoxane, metal oxide, metal silicates, metal sulfates, and tungstates, and wherein the condensed sol-gel material has a proportion between 10 and 70 vol % in the first layer.

公开(公告)号：US10906235B2

公开(公告)日：2021-02-02

申请号：US15757289

申请日：2016-09-08

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Nikolaus Gmeinwieser ,  Norwin von Malm

IPC: B29C64/129 ,  H01L27/15 ,  H01L33/46 ,  B33Y30/00 ,  B29C64/295 ,  B29C64/264 ,  H01L33/32 ,  H01L33/38

Abstract: An optoelectronic semiconductor component and a 3D printer are disclosed. In an embodiment the component includes a carrier, a plurality of individually controllable pixels configured to emit radiation during operation, wherein the plurality of individual pixels is mounted on the carrier and is formed from at least one semiconductor material and a plurality of transport channels configured to transport a gas or a liquid through the semiconductor component in a direction transverse to and towards a radiation exit side of the semiconductor component, wherein the pixels are configured to emit radiation having a wavelength of maximum intensity of 470 nm or less, and wherein all pixels include the same semiconductor layer sequence and emit radiation of the same wavelength.

公开(公告)号：US10134957B2

公开(公告)日：2018-11-20

申请号：US14907043

申请日：2014-07-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Norwin von Malm

IPC: H01L33/48 ,  H01L33/60 ,  H01L33/56 ,  H01L33/62 ,  H01L33/00 ,  H01L33/54 ,  H01L33/46 ,  H01L33/50

Abstract: A surface-mountable optoelectronic semiconductor component is specified. The surface-mountable optoelectronic semiconductor component includes an optoelectronic semiconductor chip, a radiation-transmissive growth substrate, a housing body and an electrically conductive connection. The housing body is arranged at least in places between a side surface of the growth substrate and the electrically conductive connection. The housing body completely covers all of the side surfaces of the growth substrate, and the housing body has, on a surface facing away from the side surface of the growth substrate, traces of material removal or traces of a form tool.

公开(公告)号：US20180322825A1

公开(公告)日：2018-11-08

申请号：US16033419

申请日：2018-07-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Stefan Illek ,  Norwin von Malm ,  Tilman Ruegheimer

IPC: G09G3/3208 ,  H01L25/075 ,  G09G3/32

CPC classification number: G09G3/3208 ,  G09G3/32 ,  H01L25/0753

Abstract: A display device is disclosed. In an embodiment a display device includes at least one connection carrier comprising a multiplicity of switches and a multiplicity of light-emitting diode chips, wherein each light-emitting diode chip is mechanically fixed and electrically connected to the connection carrier, wherein each switch is designed for driving at least one light-emitting diode chip, and wherein the light-emitting diode chips are imaging elements of the display device.

公开(公告)号：US20180272605A1

公开(公告)日：2018-09-27

申请号：US15757289

申请日：2016-09-08

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Nikolaus Gmeinwieser ,  Norwin von Malm

IPC: B29C64/264 ,  B29C64/129 ,  B33Y30/00 ,  H01L27/15 ,  H01L33/32 ,  H01L33/46

CPC classification number: B29C64/264 ,  B29C64/129 ,  B33Y30/00 ,  H01L27/156 ,  H01L33/32 ,  H01L33/382 ,  H01L33/46

Abstract: An optoelectronic semiconductor component and a 3D printer are disclosed. In an embodiment the component includes a carrier, a plurality of individually controllable pixels configured to emit radiation during operation, wherein the plurality of individual pixels is mounted on the carrier and is formed from at least one semiconductor material and a plurality of transport channels configured to transport a gas or a liquid through the semiconductor component in a direction transverse to and towards a radiation exit side of the semiconductor component, wherein the pixels are configured to emit radiation having a wavelength of maximum intensity of 470 nm or less, and wherein all pixels include the same semiconductor layer sequence and emit radiation of the same wavelength.

公开(公告)号：US20180198034A1

公开(公告)日：2018-07-12

申请号：US15744400

申请日：2016-08-04

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： David O'Brien ,  Norwin von Malm

IPC: H01L33/50 ,  C09K11/08 ,  H01L23/00

CPC classification number: H01L33/502 ,  C09K11/08 ,  H01L24/42 ,  H01L33/501 ,  H01L33/505 ,  H01L2224/42 ,  H01L2933/0041

Abstract: A method of producing an optoelectronic component including a conversion element includes: A) providing a layer sequence having an active layer, wherein the active layer is configured to emit electromagnetic primary radiation; B) providing quantum dots, wherein the quantum dots are functionalized with an organic group and/or the quantum dots dissolved or dispersed in a first solvent and/or are present as a powder; C*) providing a mixture including a precursor of an inorganic matrix material and of a second solvent; D) mixing the mixture obtained in step C*) with the quantum dots of step B); E) drying the mixture; and F) sintering the mixture to form the conversion element.

公开(公告)号：US09985151B2

公开(公告)日：2018-05-29

申请号：US15528106

申请日：2015-10-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Lutz Hoeppel ,  Norwin von Malm

IPC: H01L27/14 ,  H01L31/0236 ,  H01L23/495 ,  H01L31/101 ,  H01L23/48 ,  H01L23/498

CPC classification number: H01L31/0236 ,  H01L23/481 ,  H01L23/49582 ,  H01L23/49586 ,  H01L23/49827 ,  H01L31/101 ,  H01L33/382 ,  H01L33/387

Abstract: A component with a semiconductor body, and first and second metal layer is disclosed. The first metal layer is arranged between the semiconductor body and the second metal layer, the semiconductor body has a first semiconductor layer on a side which is averted from the first metal layer, a second semiconductor layer on a side facing towards the first metal layer, and an active layer arranged between the first semiconductor layer and the second semiconductor layer, the component has a through-connection, which extends through the second semiconductor layer and the active layer for the electrical bonding of the first semiconductor layer. The second metal layer has a first subregion electrically connected to the through-connection by the first metal layer, and a second subregion spaced apart laterally from the first subregion by an intermediate space. In an overhead view, the first metal layer laterally completely covers the intermediate space.

公开(公告)号：US09985011B2

公开(公告)日：2018-05-29

申请号：US14912382

申请日：2014-08-08

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Britta Göötz ,  Ion Stoll ,  Norwin von Malm

IPC: H01L21/00 ,  H01L25/16 ,  C25D13/02 ,  C25D13/22 ,  H01L27/15 ,  H01L33/42 ,  H01L33/50 ,  H01L33/56

CPC classification number: H01L25/167 ,  C25D13/02 ,  C25D13/12 ,  C25D13/22 ,  H01L27/156 ,  H01L33/42 ,  H01L33/502 ,  H01L33/504 ,  H01L33/505 ,  H01L33/56 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2924/00

Abstract: A method for producing an optoelectronic semiconductor chip is disclosed. A semiconductor body has a pixel area, which has at least two different subpixel areas. An electrically conductive layer is applied to the radiation outlet surface of at least one subpixel area. The electrically conductive layer is designed to at least partially salify with a protic reaction partner. A conversion layer is deposited onto the electrically conductive layer by means of a electrophoresis process.

公开(公告)号：US09876001B2

公开(公告)日：2018-01-23

申请号：US15462710

申请日：2017-03-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Britta Goeoetz ,  Ion Stoll ,  Norwin von Malm

IPC: H01L21/00 ,  H01L25/16 ,  H01L33/50 ,  C25D13/12 ,  C25D13/02 ,  C25D13/22 ,  H01L27/15

CPC classification number: H01L25/167 ,  C25D13/02 ,  C25D13/12 ,  C25D13/22 ,  H01L27/156 ,  H01L33/42 ,  H01L33/502 ,  H01L33/504 ,  H01L33/505 ,  H01L33/56 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2924/00

Abstract: A method for producing an optoelectronic semiconductor chip is disclosed. In an embodiment, the method includes providing a semiconductor body with a pixel region including different subpixel regions, each subpixel region having a radiation exit face, applying an electrically conductive layer onto the radiation exit face of a subpixel region, wherein the electrically conductive layer is suitable at least in part for forming a salt with a protic reactant, and depositing a conversion layer on the electrically conductive layer using an electrophoresis process, wherein the deposited conversion layer comprises pores.