公开(公告)号：US06326318B1

公开(公告)日：2001-12-04

申请号：US09521865

申请日：2000-03-08

申请人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Kaori Misawa ,  Masaki Hirase ,  Hiroyuki Aoe

发明人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Kaori Misawa ,  Masaki Hirase ,  Hiroyuki Aoe

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/02282 ,  H01L21/02321 ,  H01L21/02351 ,  H01L21/3115 ,  H01L21/31155 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76877

摘要： A semiconductor device and a process for producing the same. The device has two conducting layers that are spaced from each other and an organic insulating film for electrically insulating these two conducting layers from each other. The organic insulating film contains contact holes with plugs being embedded therein so as to electrically connect these two conducting layers by the plugs. The process contains a step of forming the organic insulating film on the lower conducting layer. An impurity having a kinetic energy is introduced into the organic insulating film. Next, contact holes are formed in the organic insulating film, and then plugs are formed in the contact holes. An upper conducting layer is formed on the organic insulating film so as to be electrically connected to the plugs.

摘要翻译： 半导体器件及其制造方法。 该器件具有彼此间隔开的两个导电层和用于将这两个导电层彼此电绝缘的有机绝缘膜。 有机绝缘膜包含嵌入其中的插塞的接触孔，以便通过插头将这两个导电层电连接。 该方法包括在下导电层上形成有机绝缘膜的步骤。 具有动能的杂质被引入到有机绝缘膜中。 接下来，在有机绝缘膜中形成接触孔，然后在接触孔中形成插塞。 在有机绝缘膜上形成上导电层，以电连接到插头。

公开(公告)号：US06288438B1

公开(公告)日：2001-09-11

申请号：US08923901

申请日：1997-09-04

申请人： Hideki Mizuhara ,  Hiroyuki Watanabe ,  Noriaki Kojima

发明人： Hideki Mizuhara ,  Hiroyuki Watanabe ,  Noriaki Kojima

IPC分类号： H01L2358

CPC分类号： H01L21/76859 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/7685 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device that allows improvement in adhesion between insulation films having a 2-layered structure together with improvement of planarization and film characteristics, and a fabrication method thereof are obtained. In the fabrication method of the semiconductor device, an insulation film of a 2-layered structure having at least an upper layer and a lower layer is formed on a semiconductor substrate. Then, impurities are introduced into the upper insulation film under a condition where impurities arrive at least at the interface between the upper insulation film and the lower insulation film. By improving the adhesion between the upper and lower insulation films, the upper insulation film does not easily peel off.

摘要翻译： 获得能够提高具有2层结构的绝缘膜与提高平坦化和膜特性之间的粘附性的半导体器件及其制造方法。 在半导体器件的制造方法中，在半导体衬底上形成至少具有上层和下层的2层结构的绝缘膜。 然后，杂质至少在上绝缘膜和下绝缘膜之间的界面处到达上述绝缘膜的情况下被引入。 通过改善上下绝缘膜之间的粘附性，上绝缘膜不容易剥离。

公开(公告)号：US06268657B1

公开(公告)日：2001-07-31

申请号：US08877931

申请日：1997-06-18

申请人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Kaori Misawa ,  Masaki Hirase ,  Hiroyuki Aoe

发明人： Hiroyuki Watanabe ,  Hideki Mizuhara ,  Kaori Misawa ,  Masaki Hirase ,  Hiroyuki Aoe

IPC分类号： H01L21321

CPC分类号： H01L21/02164 ,  H01L21/02126 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02321 ,  H01L21/02351 ,  H01L21/3115 ,  H01L21/31155 ,  H01L21/3121 ,  H01L21/316 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76877

摘要： A semiconductor device and a process for producing the same. The device has two conducting layers that are spaced from each other and an insulating film for electrically insulating these two conducting layers from each other. The insulating film contains contact holes with plugs being embedded therein so as to electrically connect these two conducting layers by the plugs. The process contains a step of forming the insulating film on the lower conducting layer. An impurity having a kinetic energy is introduced into the insulating film. Next, contact holes are formed in the insulating film, and then plugs are formed in the contact holes. An upper conducting layer is formed on the insulating film so as to be electrically connected to the plugs.

摘要翻译： 半导体器件及其制造方法。 该器件具有彼此间隔开的两个导电层和用于将这两个导电层彼此电绝缘的绝缘膜。 绝缘膜包含嵌入其中的插塞的接触孔，以便通过插头将这两个导电层电连接。 该方法包括在下导电层上形成绝缘膜的步骤。 具有动能的杂质被引入到绝缘膜中。 接下来，在绝缘膜中形成接触孔，然后在接触孔中形成插塞。 在绝缘膜上形成上导电层以与插头电连接。

公开(公告)号：US06263186B1

公开(公告)日：2001-07-17

申请号：US09535730

申请日：2000-03-27

申请人： Akira Okamoto ,  Norio Joichi ,  Hiroyuki Watanabe ,  Hideo Yamane ,  Youbao Peng

发明人： Akira Okamoto ,  Norio Joichi ,  Hiroyuki Watanabe ,  Hideo Yamane ,  Youbao Peng

IPC分类号： G03G1500

CPC分类号： G03G15/6564

摘要： An image forming apparatus includes: a sheet feeding member for feeding a recording material; an image recording member for recording an image on the recording material; a conveyance path connecting the sheet feeding member and the image recording member, along which the recording material is conveyed; a registration member which is provided in the conveyance path located at the upstream side of the image recording member in the conveyance direction for the recording material, and stops the leading edge of the recording material when being hit by the leading edge, and then, starts conveyance of the recording material; a loop forming member which is provided in the conveyance path located at the upstream side of the registration member in the conveyance direction for the recording material, and forms a loop on the recording material which is stopped by the registration member; a first driving source for driving the registration member; a second driving source for driving the loop forming member; and a drive controller for controlling the first driving source and the second driving source. The drive controller drives both the first driving source and the second driving source after the leading edge of the recording material hits the registration member.

摘要翻译： 图像形成装置包括：用于馈送记录材料的片材进给构件; 用于在记录材料上记录图像的图像记录部件; 输送路径，连接所述供纸构件和所述图像记录构件，所述记录材料沿着所述输送路径被传送; 记录部件，其设置在位于图像记录部件的上游侧的传送路径中，用于记录材料的传送方向，并且在被前缘撞击时停止记录材料的前缘，然后开始 传送记录材料; 环形成部件设置在位于记录材料的输送方向上的配准部件的上游侧的输送路径中，并且在由记录部件停止的记录材料上形成回路; 用于驱动所述注册构件的第一驱动源; 用于驱动所述环形成构件的第二驱动源; 以及用于控制第一驱动源和第二驱动源的驱动控制器。 驱动控制器在记录材料的前缘撞击对准构件之后驱动第一驱动源和第二驱动源。

公开(公告)号：USD444778S1

公开(公告)日：2001-07-10

申请号：US29130390

申请日：2000-09-29

申请人： Masafumi Ito ,  Hiroyuki Watanabe ,  Minoru Sube

设计人： Masafumi Ito ,  Hiroyuki Watanabe ,  Minoru Sube

公开(公告)号：USD431238S

公开(公告)日：2000-09-26

申请号：US94679

申请日：1998-10-07

申请人： Masafumi Ito ,  Hiroyuki Watanabe ,  Yukio Iikura

设计人： Masafumi Ito ,  Hiroyuki Watanabe ,  Yukio Iikura

公开(公告)号：USD425892S

公开(公告)日：2000-05-30

申请号：US95751

申请日：1998-10-29

申请人： Masafumi Ito ,  Hiroyuki Watanabe

设计人： Masafumi Ito ,  Hiroyuki Watanabe

公开(公告)号：US5885071A

公开(公告)日：1999-03-23

申请号：US812843

申请日：1997-03-06

申请人： Hiroyuki Watanabe ,  Tatsuhiro Sato

发明人： Hiroyuki Watanabe ,  Tatsuhiro Sato

IPC分类号： C03B20/00 ,  C03B19/09 ,  C03C17/34 ,  C30B15/10 ,  C30B29/06 ,  C30B35/00 ,  F27B14/10 ,  B29D22/00

CPC分类号： C03C17/3411 ,  C03B19/095 ,  C30B15/10 ,  C30B35/002 ,  Y10T428/13

摘要： In order to reduce concentrations of impurities in an inner layer of a quartz crucible for pulling a silicon single crystal which comprises an outer layer made of quartz glass and an inner layer formed on the inner surface of the outer layer, a migration-preventing layer is formed between the outer and inner layers, wherein the migration-preventing layer prevents migration of the impurities such as alkaline metals included in the natural quartz glass in the outer layer to the synthetic quartz glass in the inner layer. The method of producing a crucible using a mold with an upper opening comprises the steps of: feeding a first quartz powder into the mold along an inner surface of the mold to pile up the first quartz powder in a layered structure and form a preform of the first quartz powder; melting a part of the preform by heat radiated from inside the preform; cooling the preform to solidify and form a crucible substrate of an opaque quartz glass layer; generating a high temperature gas atmosphere inside the substrate during or after formation of the substrate; feeding a second quartz powder containing aluminum or in combination with an aluminum-containing component into the gas atmosphere and melting it in the gas atmosphere; settling the second quartz powder melt flying from the gas atmosphere on an inner surface of the substrate to form an aluminum-containing intermediate quartz glass layer; feeding a third quartz powder into the gas atmosphere and melting it in the gas atmosphere; and it as settling the third quartz powder melt flying from the gas atmosphere on the inner surface of the aluminum-containing quartz glass layer to form a transparent quartz glass layer with high purity.

摘要翻译： 为了降低石英坩埚的内层中的杂质浓度，用于拉制包含由石英玻璃制成的外层和形成在外层的内表面上的内层的硅单晶，防迁移层为 形成在外层和内层之间，其中防迁移层防止包含在外层中的天然石英玻璃中的杂质如内层中的合成石英玻璃的迁移。 使用具有上部开口的模具制造坩埚的方法包括以下步骤：沿着模具的内表面将第一石英粉末进料到模具中，以堆叠结构堆积第一石英粉末，并形成预成型体 第一石英粉; 通过从预制件内部辐射的热量来熔化预成型件的一部分; 冷却预成型件以固化并形成不透明石英玻璃层的坩埚基底; 在基板形成期间或之后在基板内产生高温气体气氛; 将含有铝的第二石英粉末或与含铝组分组合进入气体气氛中并在气体气氛中熔融; 将从气体气氛中飞散的第二石英粉末熔融在基板的内表面上，形成含铝的中间石英玻璃层; 将第三石英粉放入气体气氛中并在气体气氛中熔化; 并将其沉淀在含铝石英玻璃层的内表面上从气体气氛中飞散的第三石英粉末熔融物，以形成高纯度的透明石英玻璃层。

公开(公告)号：US5877027A

公开(公告)日：1999-03-02

申请号：US918133

申请日：1997-08-27

申请人： Katsuhiko Kemmochi ,  Kiyotaka Maekawa ,  Chuzaemon Tsuji ,  Manabu Saitou ,  Hiroyuki Miyazawa ,  Hiroyuki Watanabe

发明人： Katsuhiko Kemmochi ,  Kiyotaka Maekawa ,  Chuzaemon Tsuji ,  Manabu Saitou ,  Hiroyuki Miyazawa ,  Hiroyuki Watanabe

IPC分类号： G01N21/73 ,  G01N1/00 ,  G01N1/28 ,  G01N1/40 ,  G01N27/26 ,  G01N33/00 ,  G01N33/20

CPC分类号： G01N33/20 ,  G01N1/4044 ,  G01N2033/0095 ,  Y10T436/20 ,  Y10T436/25125

摘要： An analytical method for the quantitative determination of the impurities in silicon dioxide by which trace amounts of hardly soluble impurities contained in silicon dioxide can be reliably decomposed and converted into a solution so that the contents of all of the impurities contained in silicon dioxide or, in particular, zirconium in a natural quartz powder can be accurately determined. Silicon dioxide is decomposed with hydrofluoric acid or an acid mixture of hydrofluoric acid and another inorganic acid to give a decomposition solution which is, as such or after admixture with another inorganic acid, subjected to evaporation to dryness and the residue is heated to cause fusion with addition of a salt or hydroxide of an alkali metal followed by dissolution of the salt or hydroxide of an alkali metal with pure water or with an aqueous solution of an inorganic acid to give an aqueous solution which is subjected to quantitative analysis of the impurities therein.

摘要翻译： 用于定量测定二氧化硅中的杂质的分析方法，其中二氧化硅中含有微量难溶的杂质可以被可靠地分解并转化成溶液，使得二氧化硅中所含的所有杂质的含量， 特别地，可以精确地测定天然石英粉中的锆。 二氧化硅用氢氟酸或氢氟酸与其他无机酸的酸性混合物分解，得到分解溶液，该分解溶液与其它无机酸混合后进行蒸发干燥，并将残余物加热至与 加入碱金属的盐或氢氧化物，然后用纯水或无机酸的水溶液溶解碱金属的盐或氢氧化物，得到对其中的杂质进行定量分析的水溶液。

公开(公告)号：US5787083A

公开(公告)日：1998-07-28

申请号：US626179

申请日：1996-03-29

申请人： Norihisa Iwamoto ,  Hiroyuki Watanabe

发明人： Norihisa Iwamoto ,  Hiroyuki Watanabe

IPC分类号： H04Q3/00 ,  H04L12/18

CPC分类号： H04Q3/0025

摘要： In a switching network through which a path between a source terminal and each of destination terminals is formed, a set of destination addresses is generated at the source terminal, and each of the destination addresses is transmitted from the source terminal to a destination switch node accommodating the destination terminal. Each switch node on the path receives a first set of destination addresses from a previous switch node or the source terminal, and decides whether each destination address of the first set is accommodated in the switch node. Based on the decision, the switch node divides the first set into a plurality of second sets each corresponding to one route of the switch node. Each second set is transmitted to the next switch node through a corresponding route. The next switch node performs the same steps as the switch node mentioned above.

摘要翻译： 在形成源终端与每个目的终端之间的路径的交换网络中，在源终端生成一组目的地地址，并且将每个目的地地址从源终端发送到容纳的目的地交换节点 目的地终端。 路径上的每个交换节点从先前的交换节点或源终端接收第一组目的地地址，并且确定第一组的每个目的地地址是否被容纳在交换节点中。 基于该决定，交换节点将第一组划分为与交换节点的一个路由对应的多个第二集合。 每个第二组通过相应的路由传输到下一个交换节点。 下一个交换节点执行与上述交换节点相同的步骤。