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    Methods of forming conductive elements using organometallic layers and flowable, curable conductive materials
    64.
    发明申请
    Methods of forming conductive elements using organometallic layers and flowable, curable conductive materials 有权
    使用有机金属层和可流动的可固化导电材料形成导电元件的方法

    公开(公告)号：US20060115926A1

    公开(公告)日：2006-06-01

    申请号：US11336540

    申请日：2006-01-20

    申请人： Alan Wood ,  Warren Farnworth ,  Charles Watkins ,  Peter Benson

    发明人： Alan Wood ,  Warren Farnworth ,  Charles Watkins ,  Peter Benson

    IPC分类号： H01L21/50

    CPC分类号： H01L27/14685 ,  B33Y10/00 ,  B33Y80/00 ,  H01L21/56 ,  H01L23/3128 ,  H01L27/14618 ,  H01L27/14627 ,  H01L2224/04105 ,  H01L2224/20 ,  H01L2924/01005 ,  H01L2924/01027 ,  H01L2924/01046 ,  H01L2924/12041

    摘要： A conductive element is formed on a substrate by forming an organometallic layer on at least a portion of a surface of the substrate, heating a portion of the organometallic layer, and removing an unheated portion of the organometallic layer. In other methods, a flowable, uncured conductive material may be deposited on a surface of the substrate, the flowable, uncured conductive material may be selectively cured over at least a portion of the surface of the substrate, and a portion of the cured conductive material may be removed. A conductive via is formed by forming a hole at least partially through a thickness of a substrate, depositing an organometallic material within at least a portion of the hole, and selectively heating at least a portion of the organometallic material.

    摘要翻译： 通过在基板表面的至少一部分上形成有机金属层，加热部分有机金属层，去除有机金属层的未加热部分，在基板上形成导电元件。 在其他方法中，可流动的未固化的导电材料可以沉积在基底的表面上，可流动的未固化的导电材料可以选择性地固化在基底表面的至少一部分上，并且一部分固化的导电材料 可能被删除。 通过至少部分地穿过衬底的厚度形成孔，在孔的至少一部分内沉积有机金属材料并选择性地加热至少一部分有机金属材料来形成导电通孔。

    Methods for forming backside alignment markers useable in semiconductor lithography
    69.
    发明申请
    Methods for forming backside alignment markers useable in semiconductor lithography 有权
    形成用于半导体光刻的背面对准标记的方法

    公开(公告)号：US20050250292A1

    公开(公告)日：2005-11-10

    申请号：US10840733

    申请日：2004-05-06

    申请人： Pary Baluswamy ,  Peter Benson

    发明人： Pary Baluswamy ,  Peter Benson

    IPC分类号： B23K26/36 ,  G03F9/00 ,  H01L21/00 ,  H01L21/301 ,  H01L21/3065 ,  H01L21/46 ,  H01L21/76 ,  H01L21/78 ,  H01L23/544

    CPC分类号： H01L21/67282 ,  B23K26/364 ,  G03F9/708 ,  G03F9/7084 ,  H01L21/3065 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Disclosed herein are methods for forming photolithography alignment markers on the back side of a substrate, such as a crystalline silicon substrate used in the manufacture of semiconductor integrated circuits. According to the disclosed techniques, laser radiation is used to remove the material (e.g., silicon) from the back side of a substrate to form the back side alignment markers at specified areas. Such removal can comprise the use of laser ablation or laser-assisted etching. The substrate is placed on a motor-controlled substrate holding mechanism in a laser removal chamber, and the areas are automatically moved underneath the laser radiation to removal the material. The substrate holding mechanism can comprise a standard chuck (in which case use of a protective layer on the front side of the substrate is preferred), or a substrate clamping assembly which suspends the substrate at its edges (in which case the protective layer is not necessary). Alternatively, a stencil having holes corresponding to the shape of the back side alignment markers can be placed over the back side of the substrate to mitigate the need to move the substrate to the areas with precision.

    摘要翻译： 这里公开了在衬底的背面上形成光刻对准标记的方法，例如用于制造半导体集成电路的晶体硅衬底。 根据所公开的技术，使用激光辐射从衬底的背面去除材料（例如硅），以在特定区域形成背面对准标记。 这种去除可以包括使用激光烧蚀或激光辅助蚀刻。 将基板放置在激光去除室中的电动机控制的基板保持机构上，并且这些区域在激光辐射下自动移动以去除材料。 基板保持机构可以包括标准卡盘（在这种情况下优选使用基板的正面上的保护层）或将基板悬挂在其边缘处的基板夹持组件（在这种情况下保护层不是保护层） 必要）。 或者，具有与背面对准标记的形状对应的孔的模板可以放置在衬底的背面上，以减轻将衬底精确地移动到区域的需要。