摘要:
The present invention relates to the field of plant genetic engineering. More specifically, the present invention relates to seed specific gene expression during a defined period of embryogenesis. The present invention provides promoters capable of transcribing heterologous nucleic acid sequences in seeds, and methods of modifying, producing, and using the same.
摘要:
A method of adding power control circuitry to a circuit design at each of an RTL and a netlist level comprising: demarcating multiple power domains within the circuit design; specifying multiple power modes each power mode corresponding to a different combination of on/off states of the multiple demarcated power domains; and defining isolation behavior relative to respective power domains.
摘要:
The present invention relates to a receiving apparatus for receiving signals in a communication system in which the signals are transmitted on the basis of frames. Each frame includes a data part having data blocks, wherein the data blocks are respectively separated by a guard sequence. The receiving apparatus performs a correlation on the guard sequences of a received signal and performs a clock drift estimation in the frequency domain on the basis of the correlation results. The receiving apparatus also compensates the clock drift of the received signal on the basis of the clock drift estimation.
摘要:
Described herein is a receiving apparatus and method for receiving signals in a wireless communication system, the signals including a dedicated channel estimation sequence, including a gain control means that controls the gain of a received signal, a channel estimation means that performs a channel estimation on the basis of a dedicated channel estimation sequence included in a received signal, a gain error correction means that corrects a gain error in the result of said channel estimation caused by said gain control means on the basis of the dedicated channel estimation sequence comprised in the received signal, and an equalizing means that performs an equalization on the received signal on the basis of the gain corrected channel estimation result.
摘要:
A method is provided in one example embodiment and includes establishing a connection between a client and a messaging fabric of a conductor element associated with a video system; defining a service having a set of features using a set of interfaces associated with an Extensible Messaging and Presence Protocol (XMPP); assigning a plurality of XML namespaces for the set of features of the service; assigning an identifier to the service; and registering the service in a service directory in order to create a mapping between the XML namespaces and the identifier.
摘要:
A semiconductor die package is disclosed. The semiconductor die package comprises a metal substrate, and a semiconductor die comprising a first surface comprising a first electrical terminal, a second surface including a second electrical terminal, and at least one aperture. The metal substrate is attached to the second surface. A plurality of conductive structures is on the semiconductor die, and includes at least one conductive structure disposed in the at least one aperture. Other conductive structures may be disposed on the first surface of the semiconductor die.
摘要:
A receiving apparatus, a receiving method, and an imaging apparatus and method, adapted to receive high frequency image signals. The apparatus includes two or more receiver channels, each receiver channel including an antenna pattern including plural antenna elements to receive high frequency image signals, a receiving mechanism to process the high frequency image signals received by the antenna elements into baseband signals, an analog-to-digital conversion mechanism to convert the baseband signals from the receiving mechanism into digital signals, a phase shifting mechanism to phase shift the digital signals, and a combining mechanism to combine the phase shifted digital signals from the receiver channels into combined signals.
摘要:
The present invention provides methods of making composite materials comprising combining particles of crosslinked rubber with coagulated aqueous polymer dispersions to form a mixture in aqueous dispersion, and subjecting the aqueous dispersion mixture to solid state shear pulverization to form materials that can be processed as thermoplastics at crosslinked rubber concentrations of from 10 to as high as 95 wt. %, based on the total solids of the material. The method may further comprise kneading the pulverized product to form useful articles, such as roofing membranes and shoe soles.
摘要:
In one embodiment, the semiconductor device includes a non-volatile memory cell array, a write circuit configured to write to the non-volatile memory cell array, and a control circuit. The control circuit is configured to store at least one erase indicator. The erase indicator is associated with at least a portion of the non-volatile memory cell array and indicates a logic state. The control circuit is configured to control the write circuit to write the logic state indicated by the erase indicator in the non-volatile memory cell array during an erase operation of the associated portion of the non-volatile memory cell array.
摘要:
A field effect transistor device having a strained semiconductor channel region overlying a heterostructure-semiconductor on a metal substrate includes a first semiconductor layer overlying a first metal layer. The first semiconductor layer has a first semiconductor material and a second semiconductor material in a relaxed heterostructure and is heavily doped. A second semiconductor layer overlies the first semiconductor layer and has a first semiconductor material and a second semiconductor material in a relaxed heterostructure. The second semiconductor layer is more lightly doped than the first semiconductor layer. A trench extends into the second semiconductor layer and a channel region has a strained layer of the first semiconductor material adjacent a trench sidewall. The strained channel region provides enhanced carrier mobility and improves performance of the field effect transistor.