公开(公告)号：US20200373568A1

公开(公告)日：2020-11-26

申请号：US16990020

申请日：2020-08-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yohei MOMMA ,  Takahiro KAWAKAMI ,  Teruaki OCHIAI ,  Masahiro TAKAHASHI

IPC: H01M4/46 ,  H01M10/0525 ,  H01M4/131 ,  H01M4/62 ,  H01M4/36 ,  H01M4/1391

Abstract: Provided is a positive electrode active material for a lithium ion secondary battery having favorable cycle characteristics and high capacity. A covering layer containing aluminum and a covering layer containing magnesium are provided on a superficial portion of the positive electrode active material. The covering layer containing magnesium exists in a region closer to a particle surface than the covering layer containing aluminum is. The covering layer containing aluminum can be formed by a sol-gel method using an aluminum alkoxide. The covering layer containing magnesium can be formed as follows: magnesium and fluorine are mixed as a starting material and then subjected to heating after the sol-gel step, so that magnesium is segregated.

公开(公告)号：US20200328402A1

公开(公告)日：2020-10-15

申请号：US16914607

申请日：2020-06-29

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Teruaki OCHIAI ,  Takahiro KAWAKAMI ,  Mayumi MIKAMI ,  Yohei MOMMA ,  Masahiro TAKAHASHI ,  Ayae TSURUTA

IPC: H01M4/131 ,  H01M4/1315 ,  H01M4/1391 ,  H01M4/62 ,  H01M4/13915 ,  H01M4/86

Abstract: A positive electrode active material which can improve cycle characteristics of a secondary battery is provided. Two kinds of regions are provided in a superficial portion of a positive electrode active material such as lithium cobaltate which has a layered rock-salt crystal structure. The inner region is a non-stoichiometric compound containing a transition metal such as titanium, and the outer region is a compound of representative elements such as magnesium oxide. The two kinds of regions each have a rock-salt crystal structure. The inner layered rock-salt crystal structure and the two kinds of regions in the superficial portion are topotaxy; thus, a change of the crystal structure of the positive electrode active material generated by charging and discharging can be effectively suppressed. In addition, since the outer coating layer in contact with an electrolyte solution is the compound of representative elements which is chemically stable, the secondary battery having excellent cycle characteristics can be obtained.

公开(公告)号：US20200295349A1

公开(公告)日：2020-09-17

申请号：US16885350

申请日：2020-05-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Teruaki OCHIAI ,  Takahiro KAWAKAMI ,  Mayumi MIKAMI ,  Yohei MOMMA ,  Masahiro TAKAHASHI ,  Ayae TSURUTA

IPC: H01M4/131 ,  H01M4/1315 ,  H01M4/1391 ,  H01M4/62 ,  H01M4/13915 ,  H01M4/86

Abstract: A positive electrode active material which can improve cycle characteristics of a secondary battery is provided. Two kinds of regions are provided in a superficial portion of a positive electrode active material such as lithium cobaltate which has a layered rock-salt crystal structure. The inner region is a non-stoichiometric compound containing a transition metal such as titanium, and the outer region is a compound of representative elements such as magnesium oxide. The two kinds of regions each have a rock-salt crystal structure. The inner layered rock-salt crystal structure and the two kinds of regions in the superficial portion are topotaxy; thus, a change of the crystal structure of the positive electrode active material generated by charging and discharging can be effectively suppressed. In addition, since the outer coating layer in contact with an electrolyte solution is the compound of representative elements which is chemically stable, the secondary battery having excellent cycle characteristics can be obtained.

公开(公告)号：US20200111913A1

公开(公告)日：2020-04-09

申请号：US16600375

申请日：2019-10-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Akiharu MIYANAGA ,  Junpei SUGAO ,  Hideki UOCHI ,  Yasuo NAKAMURA

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/24 ,  H01L29/66 ,  H01L21/768 ,  H01L21/324 ,  H01L21/02 ,  H01L27/12 ,  H01L29/49 ,  H01L29/45

Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.

公开(公告)号：US20180145317A1

公开(公告)日：2018-05-24

申请号：US15800184

申请日：2017-11-01

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yohei MOMMA ,  Takahiro KAWAKAMI ,  Teruaki OCHIAI ,  Masahiro TAKAHASHI

IPC: H01M4/46 ,  H01M4/131 ,  H01M10/0525

CPC classification number: H01M4/466 ,  C01P2002/00 ,  G01N23/2273 ,  H01M4/131 ,  H01M4/1391 ,  H01M4/366 ,  H01M4/62 ,  H01M10/0525 ,  H01M2004/028

Abstract: Provided is a positive electrode active material for a lithium ion secondary battery having favorable cycle characteristics and high capacity. A covering layer containing aluminum and a covering layer containing magnesium are provided on a superficial portion of the positive electrode active material. The covering layer containing magnesium exists in a region closer to a particle surface than the covering layer containing aluminum is. The covering layer containing aluminum can be formed by a sol-gel method using an aluminum alkoxide. The covering layer containing magnesium can be formed as follows: magnesium and fluorine are mixed as a starting material and then subjected to heating after the sol-gel step, so that magnesium is segregated.

公开(公告)号：US20180047852A1

公开(公告)日：2018-02-15

申请号：US15728591

申请日：2017-10-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Akiharu MIYANAGA ,  Yasuo NAKAMURA ,  Junpei SUGAO ,  Hideki UOCHI

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/45 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L29/78669 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78678 ,  H01L29/7869

Abstract: It is an object to provide a semiconductor device typified by a display device having a favorable display quality, in which parasitic resistance generated in a connection portion between a semiconductor layer and an electrode is suppressed and an adverse effect such as voltage drop, a defect in signal wiring to a pixel, a defect in grayscale, and the like due to wiring resistance are prevented. In order to achieve the above object, a semiconductor device according to the present invention may have a structure where a wiring with low resistance is connected to a thin film transistor in which a source electrode and a drain electrode that include metal with high oxygen affinity are connected to an oxide semiconductor layer with a suppressed impurity concentration. In addition, the thin film transistor including the oxide semiconductor may be surrounded by insulating films to be sealed.

公开(公告)号：US20170162700A1

公开(公告)日：2017-06-08

申请号：US15432977

申请日：2017-02-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Akiharu MIYANAGA ,  Junpei SUGAO ,  Hideki UOCHI ,  Yasuo NAKAMURA

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/423 ,  H01L29/24 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/324 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76838 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606

Abstract: By using a conductive layer including Cu as a long lead wiring, increase in wiring resistance is suppressed. Further, the conductive layer including Cu is provided in such a manner that it does not overlap with the oxide semiconductor layer in which a channel region of a TFT is formed, and is surrounded by insulating layers including silicon nitride, whereby diffusion of Cu can be prevented; thus, a highly reliable semiconductor device can be manufactured. Specifically, a display device which is one embodiment of a semiconductor device can have high display quality and operate stably even when the size or definition thereof is increased.

公开(公告)号：US20160308068A1

公开(公告)日：2016-10-20

申请号：US15198119

申请日：2016-06-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro TAKAHASHI ,  Kengo AKIMOTO ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/04 ,  H01L21/02 ,  G02F1/1362 ,  H01L27/12 ,  C01G15/00 ,  G02F1/1368 ,  G02F1/1343 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7869 ,  C01G15/006 ,  C01P2006/40 ,  G02F1/134309 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2201/123 ,  H01L21/02565 ,  H01L21/02609 ,  H01L27/1225 ,  H01L27/1285 ,  H01L27/3262 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696

Abstract: To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In1+δGa1−δO3(ZnO)m (0

Abstract translation: 为了提供具有稳定的导电性的氧化物半导体膜和通过使用氧化物半导体膜具有稳定的电特性的高度可靠的半导体器件。 氧化物半导体膜含有铟（In），镓（Ga）和锌（Zn），并且包括在与形成氧化物半导体膜的表面的法线向平行的方向上排列的c轴取向的结晶区。 此外，c轴取向的结晶区域的组成由In1 +δGa1-δO3（ZnO）m（满足0 <δ<1且m = 1〜3）表示，氧化物半导体膜的整体的组成 包括c轴对准的结晶区域由In x Ga y O 3（ZnO）m（0

公开(公告)号：US20160297686A1

公开(公告)日：2016-10-13

申请号：US15180695

申请日：2016-06-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masahiro TAKAHASHI ,  Noboru KIMIZUKA

IPC: C01G15/00 ,  H01L29/24 ,  H01L29/786 ,  H01L29/04

CPC classification number: C01G15/00 ,  C01G15/006 ,  C01P2002/60 ,  C01P2002/70 ,  C01P2002/74 ,  C01P2002/77 ,  C01P2004/04 ,  C01P2004/54 ,  C01P2006/10 ,  C01P2006/40 ,  H01L29/04 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/7869

Abstract: To provide an oxide semiconductor with a novel structure. Such an oxide semiconductor is composed of an aggregation of a plurality of InGaZnO4 crystals each of which is larger than or equal to 1 nm and smaller than or equal to 3 nm, and in the oxide semiconductor, the plurality of InGaZnO4 crystals have no orientation. Alternatively, such an oxide semiconductor is such that a diffraction pattern like a halo pattern is observed by electron diffraction measurement performed by using an electron beam with a probe diameter larger than or equal to 300 nm, and that a diffraction pattern having a plurality of spots arranged circularly is observed by electron diffraction measurement performed by using an electron beam with a probe diameter larger than or equal to 1 nm and smaller than or equal to 30 nm.

公开(公告)号：US20160111282A1

公开(公告)日：2016-04-21

申请号：US14972964

申请日：2015-12-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO ,  Junichiro SAKATA ,  Takuya HIROHASHI ,  Masahiro TAKAHASHI ,  Hideyuki KISHIDA ,  Akiharu MIYANAGA

IPC: H01L21/02 ,  H01L21/28 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/28079 ,  H01L21/28158 ,  H01L29/04 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78693

Abstract: It is an object to provide an oxide semiconductor which is suitable for use in a semiconductor device. Alternatively, it is another object to provide a semiconductor device using the oxide semiconductor. Provided is a semiconductor device including an In—Ga—Zn—O based oxide semiconductor layer in a channel formation region of a transistor. In the semiconductor device, the In—Ga—Zn—O based oxide semiconductor layer has a structure in which crystal grains represented by InGaO3(ZnO)m (m=1) are included in an amorphous structure represented by InGaO3(ZnO)m (m>0).