摘要:
To provide a photo-interrupter which can anchor a light-emitting device and a light-receiving device to a concave case in an expensive configuration.The photo-interrupter (1) includes a light-emitting device (6) and a light-receiving device (7) each with a lens projected forward being housed oppositely to each other within an concave case (2) of an opaque resin mold. The sides of the lenses (6a) and (7a) of the light-emitting device (6) and the light-receiving device (7) are secured onto the end faces 5x and 5y of openings (5a) and (5b) formed on the opposite inner surfaces of the case (2). The left and right outer surfaces (2x) and (2y) of the case (2) are bent to form pressing portions (2u) and (2v). The backs of the light-emitting device (6) and the light-receiving device (7) are pressed by the pressing portions so that they are anchored to the case (2).
摘要:
A method for forming an NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide layer (NOL) or a bi-layer comprising a non-metallic layer and a specularly reflecting nano-oxide layer and the sensor element so formed. The method of producing these sensor elements provides elements having higher GMR ratios and lower resistances than elements of the prior art.
摘要:
The semiconductor device (A) comprises a semiconductor chip (3), a protective package (4) covering the semiconductor chip (3), a first lead (1), and a second lead (2). The semiconductor chip (3) is placed at an inner end (10a) of the first lead (1). Further, the semiconductor chip (3) is connected to an inner end (20a) of the second lead (2) via a wire (W). The first lead (1) includes an outer portion (11) extending out of the protective package (4) whereas the second lead (2) includes an outer portion (21) extending out of the protective package (4). These two outer portions (11, 21) are flat.
摘要:
A method for forming a bottom spin valve sensor having a synthetic antiferromagnetic pinned (SyAP) layer, antiferromagnetically coupled to a pinning layer, in which one of the layers of the SyAP is formed as a three layer lamination that contains a specularly reflecting oxide layer of FeTaO. The sensor formed according to this method has an extremely high GMR ratio and exhibits good pinning strength.
摘要:
An electronic part is, for example, a double molded photo-interrupter. The photo-interrupter incorporates a light emitting device and a light receiving device which are encapsulated with a light-transmitting resin. The two devices are packaged into one body with an opaque synthetic resin in such a way as to be opposed to each other. A through-hole is formed through the resin package and hooks extended downward from the bottom face of the package near the through hole are integrally formed with the package.
摘要:
The present invention relates to a method of forming a metal in a concave portion of a substrate. The method includes a step of preparing a substrate having a concave portion; a step of applying a liquid coating member on the substrate and filling in and solidifying the concave portion with the coating member; a step of covering the coating member with a resist; a step of forming a penetrating hole that penetrates the resist in a position of the concave portion of the substrate; a step of removing the coating member within the concave portion; and a step of filling a metal into a portion where the coating member has been removed.
摘要:
The present invention relates to a magnetic head, a head assembly, and a magnetic recording/reproducing apparatus which are capable of effectively detecting thermal asperity. The magnetic head according to the present invention includes a heat-generating resistor, a recording coil, and a resistive element. The heat-generating resistor is adapted to generate heat when power is fed thereto so that the heat generation causes at least a part of the air bearing surface to thermally expand and protrude. The recording coil is adapted to generate a recording magnetic field, and the resistive element is disposed closer to the air bearing surface than the recording coil and connected in series or in parallel with the heater. Thus, the resistive element can share a common wiring with the heater for power feeding, which eliminates the waste of wiring and achieves miniaturization.
摘要:
A magneto-resistive effect element includes a free layer having a magnetization direction which varies with respect to an external magnetic field; a pinned layer which includes a stacked structure comprising an outer pinned layer which has a magnetization direction that is fixed with respect to the external magnetic field, a non-magnetic intermediate layer which is made of ruthenium with a thickness of about 0.4 nm, and an inner pinned layer with a thickness of 3 nm or more, wherein the inner pinned layer has a magnetization direction which is fixed with respect to the external magnetic field due to anti-ferromagnetic coupling with the outer pinned layer via the non-magnetic intermediate layer; and a spacer layer sandwiched between the free layer and the inner pinned layer. Sense current flows through the pinned layer, the spacer layer, and the free layer substantially in a stacked direction.
摘要:
A magnetic structure includes a first magnetic layer, a nonmagnetic insulating layer, a nonmagnetic adhesion layer disposed on the top surfaces of the first magnetic layer and the nonmagnetic insulating layer, and a second magnetic layer disposed on the nonmagnetic adhesion layer. The nonmagnetic insulating layer contains an oxygen atom. The nonmagnetic adhesion layer is composed of one element or a plurality of elements selected from the group consisting of Al, Si and nonmagnetic transition metal elements except Ru, and the bond enthalpy of a diatomic molecule composed of an atom of the one element or each of the plurality of elements and an oxygen atom is 400 kJ/mol or higher. The nonmagnetic adhesion layer has a thickness within a range of 0.3 to 0.8 nm. The first magnetic layer and the second magnetic layer are ferromagnetically coupled to each other.
摘要:
It has been found that the insertion of a copper laminate within CoFe, or a CoFe/NiFe composite, leads to higher values of CPP GMR and DRA. However, this type of structure exhibits very negative magnetostriction, in the range of high −10−6 to −10−5. This problem has been overcome by giving the copper laminates an oxygen exposure treatment When this is done, the free layer is found to have a very low positive magnetostriction constant. Additionally, the value of the magnetostriction constant can be adjusted by varying the thickness of the free layer and/or the position and number of the oxygen treated copper laminates.