公开(公告)号：US20240063028A1

公开(公告)日：2024-02-22

申请号：US18022625

申请日：2021-08-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Shunichi ITO ,  Yoshihiro KAMATSU ,  Shinobu KAWAGUCHI ,  Shinya SASAGAWA

IPC: H01L21/477 ,  H01L21/02

CPC classification number: H01L21/477 ,  H01L21/02345 ,  H01L21/02266 ,  H01L21/0228 ,  H01L21/02554 ,  H01L21/02181 ,  H01L21/02565 ,  H01L21/02631

Abstract: A semiconductor device in which variation in characteristics is small is provided. A first insulator is formed; a first insulator is formed; a conductor is formed over the first insulator; a second insulator is formed over the conductor; a third insulator is formed over the second insulator; an oxide is formed over the third insulator; first heat treatment is performed; and second heat treatment following the first heat treatment is performed. The temperature of the first heat treatment is lower than the temperature of the second heat treatment.

公开(公告)号：US20240057403A1

公开(公告)日：2024-02-15

申请号：US18266645

申请日：2021-12-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yuichi YANAGISAWA ,  Shinya SASAGAWA ,  Takashi HAMADA

IPC: H10K59/124

CPC classification number: H10K59/124

Abstract: A highly reliable display device is provided. The display device includes a transistor over a substrate, a first insulating layer over the transistor, a second insulating layer over the first insulating layer, a plug placed to be embedded in the first insulating layer and the second insulating layer, and a light-emitting element over the second insulating layer. The light-emitting element includes a first conductive layer, an EL layer over the first conductive layer, and a second conductive layer over the EL layer. The plug electrically connects one of a source and a drain of the transistor to the first conductive layer. The second insulating layer has higher capability of inhibiting hydrogen diffusion than the first insulating layer.

公开(公告)号：US20230402279A1

公开(公告)日：2023-12-14

申请号：US18041726

申请日：2021-08-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yoshihiro KOMATSU ,  Toshikazu OHNO ,  Yuichi YANAGISAWA ,  Shinya SASAGAWA

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/56 ,  C23C16/40

CPC classification number: H01L21/02181 ,  H01L21/02205 ,  H01L21/0228 ,  C23C16/45529 ,  C23C16/56 ,  C23C16/405

Abstract: A semiconductor device in which variation in electrical characteristics is small is provided. A first insulator is deposited, a metal oxide is device over the first insulator, a second insulator is device over the metal oxide, an oxide film is device over the second insulator, and heat treatment is performed, whereby hydrogen in the first insulator, the second insulator, and the oxide is transferred and absorbed into the metal oxide. The metal oxide is formed by an ALD method.

公开(公告)号：US20230014711A1

公开(公告)日：2023-01-19

申请号：US17947252

申请日：2022-09-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoru OKAMOTO ,  Shinya SASAGAWA

IPC: H01L29/66 ,  H01L21/385 ,  H01L29/786 ,  H01L27/12 ,  H01L29/22 ,  H01L29/24 ,  H01L29/40 ,  H01L29/423 ,  H01L29/78

Abstract: A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A semiconductor device including the transistor is provided. A semiconductor device includes an oxide semiconductor, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor overlaps with the oxide semiconductor with the first insulator positioned therebetween. The second insulator has an opening and a side surface of the second insulator overlaps with a side surface of the first conductor in the opening with the first insulator positioned therebetween. Part of a surface of the second conductor and part of a surface of the third conductor are in contact with the first insulator in the opening. The oxide semiconductor overlaps with the second conductor and the third conductor.

公开(公告)号：US20210328037A1

公开(公告)日：2021-10-21

申请号：US17272399

申请日：2019-09-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Ryo TOKUMARU ,  Shinya SASAGAWA ,  Tomonori NAKAYAMA

IPC: H01L29/45 ,  H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L21/441

Abstract: A semiconductor device with favorable reliability is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a first insulator over the second oxide, a first conductor over the first insulator, and a second conductor and a third conductor over the second oxide. The second conductor includes a first region and a second region, the third conductor includes a third region and a fourth region, the second region is positioned above the first region, the fourth region is positioned above the third region, and each of the second conductor and the third conductor contains tantalum and nitrogen. The atomic ratio of nitrogen to tantalum in the first region is higher than the atomic ratio of nitrogen to tantalum in the second region, and the atomic ratio of nitrogen to tantalum in the third region is higher than the atomic ratio of nitrogen to tantalum in the fourth region.

公开(公告)号：US20210305413A1

公开(公告)日：2021-09-30

申请号：US17167332

申请日：2021-02-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Shinya SASAGAWA ,  Motomu KURATA ,  Masashi TSUBUKU

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  H01L27/12 ,  H01L27/146

Abstract: The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer.

公开(公告)号：US20210242345A1

公开(公告)日：2021-08-05

申请号：US17049042

申请日：2019-05-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Erika TAKAHASHI ,  Hiroaki HONDA ,  Kentaro SUGAYA ,  Shinya SASAGAWA

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/24 ,  H01L21/02 ,  H01L29/66

Abstract: A semiconductor device with favorable reliability is provided. The semiconductor device includes a first oxide, a second oxide, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor is provided in contact with a top surface of the first oxide. The second conductor is provided in contact with the top surface of the first oxide. The first insulator is provided over the first conductor and the second conductor. The second oxide is provided in contact with the top surface of the first oxide. The second insulator is provided over the second oxide. The third conductor is provided over the second insulator. The first insulator has a function of inhibiting diffusion of oxygen. The first oxide includes indium, an element M (M is gallium, yttrium, or tin), and zinc. The first oxide includes a first region overlapping with the third conductor. A region of the first region in contact with the second oxide includes a region in which an atomic ratio of aluminum (Al) to the element M is less than 0.1.

公开(公告)号：US20210074834A1

公开(公告)日：2021-03-11

申请号：US17073639

申请日：2020-10-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoru OKAMOTO ,  Shinya SASAGAWA

IPC: H01L29/66 ,  H01L21/385 ,  H01L29/786 ,  H01L27/12 ,  H01L29/22 ,  H01L29/24 ,  H01L29/40 ,  H01L29/423 ,  H01L29/78

Abstract: A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A semiconductor device including the transistor is provided. A semiconductor device includes an oxide semiconductor, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor overlaps with the oxide semiconductor with the first insulator positioned therebetween. The second insulator has an opening and a side surface of the second insulator overlaps with a side surface of the first conductor in the opening with the first insulator positioned therebetween. Part of a surface of the second conductor and part of a surface of the third conductor are in contact with the first insulator in the opening. The oxide semiconductor overlaps with the second conductor and the third conductor.

公开(公告)号：US20200066884A1

公开(公告)日：2020-02-27

申请号：US16671612

申请日：2019-11-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Shinya SASAGAWA ,  Motomu KURATA ,  Masashi TSUBUKU

IPC: H01L29/66 ,  H01L27/146 ,  H01L27/12 ,  H01L21/02 ,  H01L29/786

Abstract: The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer.

公开(公告)号：US20190237584A1

公开(公告)日：2019-08-01

申请号：US16378622

申请日：2019-04-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yoshinobu ASAMI ,  Yutaka OKAZAKI ,  Satoru OKAMOTO ,  Shinya SASAGAWA

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L21/475 ,  H01L29/423 ,  H01L29/06 ,  C23C16/455 ,  C23C16/40 ,  H01L21/4757 ,  H01L21/67

CPC classification number: H01L29/7869 ,  C23C16/40 ,  C23C16/45531 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/475 ,  H01L21/47573 ,  H01L21/67207 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/0649 ,  H01L29/42356 ,  H01L29/42376 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78696

Abstract: A semiconductor device includes a first oxide insulating layer over a first insulating layer, an oxide semiconductor layer over the first oxide insulating layer, a source electrode layer and a drain electrode layer over the oxide semiconductor layer, a second insulating layer over the source electrode layer and the drain electrode layer, a second oxide insulating layer over the oxide semiconductor layer, a gate insulating layer over the second oxide insulating layer, a gate electrode layer over the gate insulating layer, and a third insulating layer over the second insulating layer, the second oxide insulating layer, the gate insulating layer, and the gate electrode layer. A side surface portion of the second insulating layer is in contact with the second oxide insulating layer. The gate electrode layer includes a first region and a second region. The first region has a width larger than that of the second region.