公开(公告)号：US09755106B2

公开(公告)日：2017-09-05

申请号：US14641221

申请日：2015-03-06

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jeong Hee Yang ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Jae Moo Kim ,  Keum Ju Lee

IPC: B60Q1/56 ,  H01L33/08 ,  H01L33/38 ,  H01L33/46 ,  H05B33/06 ,  H01L33/10 ,  H01L33/24 ,  H01L33/20 ,  H01L33/42 ,  H01L33/00

CPC classification number: H01L33/08 ,  H01L33/007 ,  H01L33/10 ,  H01L33/20 ,  H01L33/24 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46 ,  H05B33/06

Abstract: Disclosed is a light emitting diode (LED) having improved light extraction efficiency. The LED includes a light emitting structure positioned on a substrate and having a first semiconductor layer, an active layer and a second semiconductor layer. A first electrode pad is electrically connected to the first semiconductor layer. A second electrode pad is positioned on the substrate. An insulating reflective layer covers a portion of the light emitting structure, and is positioned under the second electrode pad, so that the second electrode pad is spaced apart from the light emitting structure. At least one upper extension is connected to the second electrode pad to be electrically connected to the second semiconductor layer. Further, a pattern of light extraction elements is positioned on the second semiconductor layer.

公开(公告)号：US20170154921A1

公开(公告)日：2017-06-01

申请号：US15409306

申请日：2017-01-18

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Kyu Kim ,  So Ra Lee ,  Yeo Jin Yoon ,  Jae Kwon Kim ,  Joon Sup Lee ,  Min Woo Kang ,  Se Hee Oh ,  Hyun A Kim ,  Hyoung Jin Lim

IPC: H01L27/15 ,  H01L33/62 ,  H01L33/36

CPC classification number: H01L27/156 ,  H01L33/08 ,  H01L33/36 ,  H01L33/38 ,  H01L33/58 ,  H01L33/60 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/16225 ,  H01L2224/32245 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2933/0016 ,  H01L2924/00012

Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.

公开(公告)号：US09608165B2

公开(公告)日：2017-03-28

申请号：US14795167

申请日：2015-07-09

Applicant: Seoul Viosys Co., Ltd.

Inventor： Kyung Wan Kim ,  Tae Kyoon Kim ,  Yeo Jin Yoon ,  Ye Seul Kim ,  Sang Hyun Oh ,  Jin Woong Lee ,  In Soo Kim

IPC: H01L33/36 ,  H01L33/38 ,  H01L33/22 ,  H01L33/30 ,  H01L33/32 ,  H01L33/00 ,  H01L33/02 ,  H01L33/20

CPC classification number: H01L33/385 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/30 ,  H01L33/32 ,  H01L2933/0016 ,  H01L2933/0058

Abstract: A method of fabricating a light emitting diode (LED) includes: sequentially stacking a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate; and separating the substrate into unit chips, and at the same time, forming a concavo-convex structure having the shape of irregular vertical lines in a side surface of the unit chip.

公开(公告)号：US20170069799A1

公开(公告)日：2017-03-09

申请号：US15355219

申请日：2016-11-18

Applicant: Seoul Viosys Co., Ltd.

Inventor： Tae Hyuk IM ,  Chang Yeon Kim ,  Yeo Jin Yoon ,  Joon Hee Lee ,  Ki Bum Nam ,  Da Hye Kim ,  Chang Ik Im ,  Young Wug Kim

IPC: H01L33/44 ,  H01L33/38 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/40 ,  H01L33/22

CPC classification number: H01L33/44 ,  H01L33/0008 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/387 ,  H01L33/405 ,  H01L33/60 ,  H01L2933/0083 ,  H01L2933/0091

Abstract: A light-emitting diode including a support substrate, a semiconductor stack disposed on the support substrate and including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and including a groove exposing a portion of the semiconductor stack, an insulation layer disposed between the support substrate and the semiconductor stack and disposed in the groove, and a first electrode including a first electrode pad and a first electrode extension and contacting the n-type compound semiconductor layer of the semiconductor stack, in which the first electrode extension is connected to the first electrode pad, and the first electrode extension is formed along an outer boundary of the light-emitting diode.

Abstract translation: 一种发光二极管，包括支撑衬底，设置在支撑衬底上并包括p型化合物半导体层的半导体堆叠，有源层和n型化合物半导体层，设置在支撑衬底之间的反射金属层 所述反射金属层与所述半导体叠层的p型化合物半导体层欧姆接触，并且包括暴露所述半导体叠层的一部分的凹槽，设置在所述支撑基板和所述半导体叠层之间的绝缘层，以及 设置在所述槽中，以及第一电极，所述第一电极包括第一电极焊盘和第一电极延伸部，并且与所述第一电极延伸部连接到所述第一电极焊盘的所述半导体堆叠的所述n型化合物半导体层接触， 电极延伸沿着发光二极管的外边界形成。

公开(公告)号：USD770988S1

公开(公告)日：2016-11-08

申请号：US29535496

申请日：2015-08-06

Applicant: Seoul Viosys Co., Ltd.

Designer： Jong Kyu Kim ,  Yeo Jin Yoon

公开(公告)号：US09431377B2

公开(公告)日：2016-08-30

申请号：US14138917

申请日：2013-12-23

Applicant: Seoul Viosys Co., Ltd.

Inventor： Won Cheol Seo ,  Joon Hee Lee ,  Jong Kyun You ,  Chang Youn Kim ,  Jin Cheol Shin ,  Hwa Mok Kim ,  Jang Woo Lee ,  Yeo Jin Yoon ,  Jong Kyu Kim

IPC: H01L33/62 ,  H01L25/075 ,  H01L27/15 ,  H01L33/00 ,  H01L33/46

CPC classification number: H01L33/60 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00

Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.

公开(公告)号：US09401456B2

公开(公告)日：2016-07-26

申请号：US14740131

申请日：2015-06-15

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jin Woong Lee ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim

IPC: H01L33/42 ,  H01L33/38 ,  H01L33/22 ,  H01L33/40 ,  H01L33/20

CPC classification number: H01L33/405 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44

Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.

Abstract translation: 根据本发明，具有提高光提取效率的发光二极管包括：包括形成在基板上的N层，发光层和P层的半导体层叠结构; 形成在N层上的N型电极; 和形成在P层上的P型电极，其中，所述N型电极和所述P型电极包括焊盘电极和分散电极，并且所述N型电极和/或所述P型电极包括： 用于将光反射到分散电极上的反射电极层。 因此，发光二极管在电极上具有反射电极层，以提高光提取效率。 此外，反射层在垫单元下方被图案化，从而形成粗糙度并改善粘附性。

公开(公告)号：US09269871B2

公开(公告)日：2016-02-23

申请号：US14701374

申请日：2015-04-30

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ye Seul Kim ,  Da Yeon Jeong ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Hyun Oh

IPC: H01L33/00 ,  H01L21/00 ,  H01L33/46 ,  H01L33/40 ,  H01L33/42

CPC classification number: H01L33/46 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/60

Abstract: Disclosed is a light emitting diode (LED) comprising a light emitting stacked structure and an electrode structure formed to have a pattern on the light emitting stacked structure. The electrode structure of the LED includes a cluster of reflectors disposed along the pattern on the light emitting stacked structure, and a pad material layer formed to entirely cover the reflectors.

公开(公告)号：US09236533B2

公开(公告)日：2016-01-12

申请号：US14368268

申请日：2012-12-21

Applicant: Seoul Viosys Co., Ltd.

Inventor： Tae Hyuk Im ,  Chang Yeon Kim ,  Yeo Jin Yoon ,  Joon Hee Lee ,  Ki Bum Nam ,  Da Hye Kim ,  Chang Ik Im ,  Young Wug Kim

IPC: H01L29/16 ,  H01L33/44 ,  H01L33/22 ,  H01L33/38 ,  H01L33/32 ,  H01L33/00 ,  H01L33/20

CPC classification number: H01L33/44 ,  H01L33/0008 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/387 ,  H01L33/405 ,  H01L33/60 ,  H01L2933/0083 ,  H01L2933/0091

Abstract: Disclosed are a light-emitting diode and a method for manufacturing the same. A light-emitting diode according to one aspect of the present invention includes: a first conductive clad layer; a light-scattering pattern configured, in the first conductive clad layer, having a refractive index different from that of the first conductive clad layer; an active layer located under the first conductive clad layer; a second conductive clad layer located under the active layer; a first electrode configured to be electrically connected to the first conductive clad layer; and a second electrode configured to be electrically connected to the second conductive clad layer. The light-scattering pattern can improve light extraction efficiency.

Abstract translation: 公开了一种发光二极管及其制造方法。 根据本发明的一个方面的发光二极管包括：第一导电覆层; 在第一导电覆层中配置的折射率不同于第一导电覆层的折射率的光散射图案; 位于第一导电覆层下方的有源层; 位于有源层下方的第二导电覆层; 第一电极，被配置为电连接到所述第一导电包覆层; 以及第二电极，被配置为电连接到第二导电包覆层。 光散射图可以提高光提取效率。

公开(公告)号：US09209223B2

公开(公告)日：2015-12-08

申请号：US14550815

申请日：2014-11-21

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Lam Lee ,  Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Dae Won Kim

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L27/32 ,  H01L33/28 ,  H01L51/52

CPC classification number: H01L27/15 ,  H01L27/153 ,  H01L27/3281 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/28 ,  H01L33/32 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L51/5253 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2933/0066 ,  H01L2924/00

Abstract: The present invention relates to a light emitting device. The light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20° to 80° from a horizontal plane. Further, a light emitting device comprises a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20° to 80° from a horizontal plane.

Abstract translation: 本发明涉及一种发光装置。 发光器件包括衬底，形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层，其中包括N型或P型半导体层的侧表面 与水平面有20°至80°的斜率。 此外，发光器件包括形成有多个发光单元的衬底，每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层，其中，一个N型半导体层 发光单元和另一个相邻的发光单元的P型半导体层彼此连接，并且至少包括发光单元的P型半导体层的侧表面具有从20°至80°的斜率 一个水平面。