公开(公告)号：US08486748B2

公开(公告)日：2013-07-16

申请号：US13027638

申请日：2011-02-15

申请人： Harumi Ikeda ,  Susumu Hiyama ,  Takashi Ando ,  Kiyotaka Tabuchi ,  Tetsuji Yamaguchi ,  Yuko Ohgishi

发明人： Harumi Ikeda ,  Susumu Hiyama ,  Takashi Ando ,  Kiyotaka Tabuchi ,  Tetsuji Yamaguchi ,  Yuko Ohgishi

IPC分类号： H01L21/00 ,  H01L27/00

CPC分类号： H01L27/14636 ,  H01L27/1461 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/14818 ,  H01L27/14868

摘要： A solid-state imaging device having a light-receiving section that photoelectrically converts incident light includes an insulating film formed on a light-receiving surface of the light-receiving section and a film and having negative fixed charges formed on the insulating film. A hole accumulation layer is formed on a light-receiving surface side of the light-receiving section. A peripheral circuit section in which peripheral circuits are formed is provided on a side of the light-receiving section. The insulating film is formed between a surface of the peripheral circuit section and the film having negative fixed charges such that a distance from the surface of the peripheral circuit section to the film having negative fixed charges is larger than a distance from a surface of the light-receiving section to the film having negative fixed charges.

摘要翻译： 具有光电转换入射光的受光部的固体摄像装置具备形成在受光部的受光面上的绝缘膜和形成在绝缘膜上的负固定电荷的膜。 在光接收部的受光面侧形成有空穴积聚层。 形成有外围电路的外围电路部分设置在光接收部分的一侧。 绝缘膜形成在外围电路部分的表面和具有负固定电荷的膜之间，使得从外围电路部分的表面到具有负固定电荷的膜的距离大于距离光的表面的距离 接收部分电影有负固定费用。

公开(公告)号：US08404530B2

公开(公告)日：2013-03-26

申请号：US13177692

申请日：2011-07-07

申请人： Takashi Ando ,  Vijay Narayanan

发明人： Takashi Ando ,  Vijay Narayanan

IPC分类号： H01L21/338

CPC分类号： H01L21/28088 ,  H01L21/28176 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78654

摘要： A disposable gate structure and a gate spacer are formed on a semiconductor substrate. A disposable gate material portion is removed and a high dielectric constant (high-k) gate dielectric layer and a metal nitride layer are formed in a gate cavity and over a planarization dielectric layer. The exposed surface portion of the metal nitride layer is converted into a metal oxynitride by a surface oxidation process that employs exposure to ozonated water or an oxidant-including solution. A conductive gate fill material is deposited in the gate cavity and planarized to provide a metal gate structure. Oxygen in the metal oxynitride diffuses, during a subsequent anneal process, into a high-k gate dielectric underneath to lower and stabilize the work function of the metal gate without significant change in the effective oxide thickness (EOT) of the high-k gate dielectric.

摘要翻译： 在半导体衬底上形成一次性栅极结构和栅极间隔物。 去除一次性栅极材料部分，并且在栅极腔中和平坦化介电层上形成高介电常数（高k）栅极电介质层和金属氮化物层。 金属氮化物层的暴露表面部分通过使用暴露于臭氧化水或含氧化剂的溶液的表面氧化工艺转化为金属氮氧化物。 导电栅极填充材料沉积在栅极腔中并被平坦化以提供金属栅极结构。 金属氧氮化物中的氧在随后的退火过程中扩散到下面的高k栅极电介质中，以降低和稳定金属栅极的功函数，而不会在高k栅极电介质的有效氧化物厚度（EOT）上显着变化 。

公开(公告)号：US20130060042A1

公开(公告)日：2013-03-07

申请号：US13581857

申请日：2010-11-10

申请人： Yoshimasa Fukuda ,  Takashi Ando ,  Kimihiko Goto ,  Nozomu Nakanishi ,  Takashi Watanabe ,  Kenichi Kurihara ,  Nobuto Minowa ,  Masaaki Mitomi

发明人： Yoshimasa Fukuda ,  Takashi Ando ,  Kimihiko Goto ,  Nozomu Nakanishi ,  Takashi Watanabe ,  Kenichi Kurihara ,  Nobuto Minowa ,  Masaaki Mitomi

IPC分类号： C07D493/04

CPC分类号： C07D493/04

摘要： Disclosed is a process for efficiently producing pyripyropene derivatives having acyloxy at the 1-position and 11-position and hydroxyl at the 7-position. The process comprises selectively acylating hydroxyl at the 1-position and 11-position of a compound represented by formula B1 through one to three steps with an acylating agent in the presence or absence of a base.

摘要翻译： 公开了一种有效生产在1-位和11位上具有酰氧基并在7-位具有羟基的吡啶并苯衍生物的方法。 该方法包括在存在或不存在碱的情况下用酰化剂选择性地将式B1化合物的1位和11位羟基选择性酰化1-3步。

公开(公告)号：US08344154B2

公开(公告)日：2013-01-01

申请号：US12656606

申请日：2010-02-04

申请人： Takahisa Maruyama ,  Yuko Kano ,  Takashi Ando ,  Toshiro Sasaki ,  Kazuhiro Aihara ,  Toshiki Fujita

发明人： Takahisa Maruyama ,  Yuko Kano ,  Takashi Ando ,  Toshiro Sasaki ,  Kazuhiro Aihara ,  Toshiki Fujita

IPC分类号： C07D277/24 ,  C07D277/26

CPC分类号： C07D487/04

摘要： 2-Ethenylthio-type carbapenem derivatives of formula (I) or pharmaceutically acceptable salts thereof are provided. The compounds according to the present invention have potent antimicrobial activity and a wide antimicrobial spectrum against pneumococci including penicillin resistant Streptococcus pneumoniae (PRSP), Haemophilus influenzae including β-lactamase-negative, ampicillin-resistant Haemophilus influenzae (BLNAR), and Moraxella (Branhamella) catarrhalis.

摘要翻译： 提供式（I）的2-乙烯基硫代碳代青霉烯衍生物或其药学上可接受的盐。 根据本发明的化合物具有有效的抗微生物活性和抗肺炎球菌的广谱抗菌谱，包括耐青霉素肺炎链球菌（PRSP），流感嗜血杆菌，包括β-内酰胺酶阴性，氨苄青霉素抗性流感嗜血杆菌（BLNAR）和莫拉氏菌 ）卡他氏菌

公开(公告)号：US20120330021A1

公开(公告)日：2012-12-27

申请号：US13572971

申请日：2012-08-13

申请人： Kimihiko Goto ,  Kazumi Yamamoto ,  Masayo Sakai ,  Masaaki Mitomi ,  Takashi Ando

发明人： Kimihiko Goto ,  Kazumi Yamamoto ,  Masayo Sakai ,  Masaaki Mitomi ,  Takashi Ando

IPC分类号： C07D493/04

CPC分类号： C07D493/04 ,  Y02P20/55

摘要： A process for producing compound C represented by formula C is disclosed: wherein R′ represents substituent groups as described herein. The process can produce pyripyropene derivatives that have acyloxy groups at the 1- and 11-positions and a hydroxyl group at the 7-position and are useful as insect pest control agents at a high yield.

摘要翻译： 公开了制备由式C表示的化合物C的方法：其中R'表示如本文所述的取代基。 该方法可以产生在1-位和11位上具有酰氧基并且在7-位上具有羟基并且以高产率用作害虫控制剂的吡哆烯衍生物。

公开(公告)号：US20120326216A1

公开(公告)日：2012-12-27

申请号：US13604036

申请日：2012-09-05

申请人： Takashi Ando ,  Christian Lavoie ,  Vijay Narayanan

发明人： Takashi Ando ,  Christian Lavoie ,  Vijay Narayanan

IPC分类号： H01L29/78

CPC分类号： H01L29/66545 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/28518 ,  H01L21/324 ,  H01L29/165 ,  H01L29/456 ,  H01L29/66606 ,  H01L29/66628 ,  H01L29/7848

摘要： Devices and methods for device fabrication include forming a gate structure with a sacrificial material. Silicided regions are formed on source/drain regions adjacent to the gate structure or formed at the bottom of trench contacts within source/drain areas. The source/drain regions or the silicided regions are processed to build resistance to subsequent thermal processing and adjust Schottky barrier height and thus reduce contact resistance. Metal contacts are formed in contact with the silicided regions. The sacrificial material is removed and replaced with a replacement conductor.

公开(公告)号：US08334552B2

公开(公告)日：2012-12-18

申请号：US12763615

申请日：2010-04-20

申请人： Itaru Oshiyama ,  Takashi Ando ,  Susumu Hiyama ,  Tetsuji Yamaguchi ,  Yuko Ohgishi ,  Harumi Ikeda

发明人： Itaru Oshiyama ,  Takashi Ando ,  Susumu Hiyama ,  Tetsuji Yamaguchi ,  Yuko Ohgishi ,  Harumi Ikeda

IPC分类号： H01L27/148

CPC分类号： H01L27/14636 ,  H01L27/1461 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/14818 ,  H01L27/14868

摘要： A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section.

摘要翻译： 具有执行入射光的光电转换的光感测部的固态成像装置包括：形成在感光部的受光面上的绝缘层; 在绝缘层上形成具有负电荷的层; 以及形成在光检测部的光接收表面上的空穴积聚层。

公开(公告)号：US20120305072A1

公开(公告)日：2012-12-06

申请号：US13516057

申请日：2010-12-09

申请人： Shigeo Fujimori ,  Yoshiyuki Kitamura ,  Takashi Ando ,  Tetsuya Goto

发明人： Shigeo Fujimori ,  Yoshiyuki Kitamura ,  Takashi Ando ,  Tetsuya Goto

IPC分类号： H01L31/18 ,  H01L31/0236 ,  H01L31/0224

CPC分类号： H01L31/1804 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547 ,  Y02P70/521

摘要： A method is provided for manufacturing a semiconductor device, wherein a p-type region and/or n-type pattern is formed on a surface of a semiconductor substrate, including ejecting at least one of etching paste, masking paste, doping paste, and electrode paste from an ejecting orifice of a nozzle toward the surface of the semiconductor substrate to form beads formed of the paste between the semiconductor substrate and the ejecting orifice and moving the semiconductor substrate relative to the nozzle thereby the paste is applied to the surface of the semiconductor substrate in a stripe shape.

摘要翻译： 提供一种用于制造半导体器件的方法，其中在半导体衬底的表面上形成p型区域和/或n型图案，包括喷射蚀刻膏，掩模膏，掺杂膏和电极中的至少一种 从喷嘴的喷射孔朝向半导体基板的表面粘贴，以形成由半导体基板和喷射孔之间的浆料形成的珠子，并相对于喷嘴移动半导体基板，从而将糊料施加到半导体的表面 基材为条状。

公开(公告)号：US08268209B2

公开(公告)日：2012-09-18

申请号：US11623776

申请日：2007-01-17

申请人： Masahiko Ogino ,  Akihiro Miyauchi ,  Takashi Ando ,  Chiseki Haginoya ,  Susumu Komoriya ,  Yasunari Sohda ,  Souichi Katagiri ,  Hiroya Ohta ,  Yoshinori Nakayama

发明人： Masahiko Ogino ,  Akihiro Miyauchi ,  Takashi Ando ,  Chiseki Haginoya ,  Susumu Komoriya ,  Yasunari Sohda ,  Souichi Katagiri ,  Hiroya Ohta ,  Yoshinori Nakayama

IPC分类号： H01L23/544

CPC分类号： H01L21/76838 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F9/7076 ,  G11B5/855 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a mold in which a pattern is formed of a fine concavo-convex shape, two or more of alignment marks for determining a relative positional relation between a substrate and a mold are formed concentrically. Moreover, a damaged mark is identified from the positional information and shape of the respective marks, and an alignment between the mold and the substrate to which a resin film is applied is carried out excluding the damaged mark.

摘要翻译： 在图案形成为微细凹凸形状的模具中，同心地形成用于确定基板和模具之间的相对位置关系的两个或更多个对准标记。 此外，根据各个标记的位置信息和形状来识别损坏的标记，并且除了损坏的标记之外，执行模具和施加了树脂膜的基板之间的对准。

公开(公告)号：US08113816B2

公开(公告)日：2012-02-14

申请号：US11774266

申请日：2007-07-06

申请人： Yasuhiko Tada ,  Masahiko Ogino ,  Hiroshi Yoshida ,  Takashi Ando ,  Kosuke Kuwabara

发明人： Yasuhiko Tada ,  Masahiko Ogino ,  Hiroshi Yoshida ,  Takashi Ando ,  Kosuke Kuwabara

IPC分类号： B28B13/06

CPC分类号： B29C59/022 ,  B29C37/0003 ,  B29C2059/023 ,  B29L2017/005 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G11B5/855

摘要： An imprint device transfers a finely patterned structure created on a stamper onto a material to be patterned, by bringing the stamper and the material to be patterned in contact with each other. At least one chamfered edge portion is formed at least one of the stamper and the material to be patterned. The imprint device has a separating unit for holding the chamfered edge portion of at least one of the stamper and the material to be patterned, so as to separate the stamper from the material to be patterned.

摘要翻译： 压印设备通过使压模和待图案化的材料彼此接触来将形成在压模上的精细图案化结构传递到待图案化的材料上。 至少一个倒角边缘部分形成有压模和要被图案化的材料中的至少一个。 压印装置具有用于保持压模和要被图案化的材料中的至少一个的倒角边缘部分的分离单元，以便将压模与要被图案化的材料分开。