公开(公告)号：USD319436S

公开(公告)日：1991-08-27

申请号：US535456

申请日：1990-06-08

申请人： Takeshi Matsushita

设计人： Takeshi Matsushita

公开(公告)号：US4920513A

公开(公告)日：1990-04-24

申请号：US171486

申请日：1988-03-21

申请人： Kaneyoshi Takeshita ,  Takeshi Matsushita

发明人： Kaneyoshi Takeshita ,  Takeshi Matsushita

IPC分类号： G11C11/36 ,  G11C11/401 ,  H01L21/8229 ,  H01L27/10 ,  H01L27/102

CPC分类号： G11C11/36 ,  G11C11/401

摘要： A semiconductor memory device having a number of memory cells. Each of the memory cells comprises a diode having a first electrode connected to a bit line. The diode has a second electrode connected at a point to one terminal of a storage capacitor, the other terminal of which is connected to a word line. A reset circuit is provided for resetting the point to a predetermined potential.

摘要翻译： 一种具有多个存储单元的半导体存储器件。 每个存储单元包括具有连接到位线的第一电极的二极管。 二极管具有连接到存储电容器的一端的点的第二电极，另一个端子连接到字线。 提供复位电路用于将点复位到预定电位。

公开(公告)号：US4302763A

公开(公告)日：1981-11-24

申请号：US65262

申请日：1979-08-09

申请人： Norikazu Ohuchi ,  Hisayoshi Yamoto ,  Hisao Hayashi ,  Takeshi Matsushita

发明人： Norikazu Ohuchi ,  Hisayoshi Yamoto ,  Hisao Hayashi ,  Takeshi Matsushita

IPC分类号： H01L21/205 ,  H01L29/04 ,  H01L29/06 ,  H01L29/08 ,  H01L29/72 ,  H01L29/737 ,  H01L29/74 ,  H01L31/0368 ,  H01L31/0745 ,  H01L33/00 ,  H01L29/161

CPC分类号： H01L33/002 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/0611 ,  H01L29/0638 ,  H01L29/0839 ,  H01L29/72 ,  H01L29/7375 ,  H01L29/7408 ,  H01L31/03682 ,  H01L31/0745 ,  Y02E10/546

摘要： A semiconductor device includes a semiconductor substrate, a first region of first conductivity type in the substrate, a second region of second conductivity type in the substrate and adjacent to the first region, a third region of the first conductivity type adjacent to the second region having at least a portion on the substrate which is comprised of the same element as the substrate and oxygen, the band gap energy of the portion being larger than that of the second region and means for transporting majority carriers in the first region to the third region.

摘要翻译： 半导体器件包括半导体衬底，在衬底中的第一导电类型的第一区域，在衬底中并与第一区域相邻的第二导电类型的第二区域，与第二区域相邻的第一导电类型的第三区域具有 由与衬底相同的元件和氧构成的衬底上的至少一部分，该部分的带隙能量大于第二区域的带隙能量，以及用于将第一区域中的多数载流子输送到第三区域的装置。

公开(公告)号：US4216572A

公开(公告)日：1980-08-12

申请号：US967307

申请日：1978-12-07

申请人： Takeshi Matsushita ,  Jinsei Ida ,  Kazuo Otsuka

发明人： Takeshi Matsushita ,  Jinsei Ida ,  Kazuo Otsuka

IPC分类号： B23Q3/157

CPC分类号： B23Q3/157 ,  B23Q2003/1558 ,  Y10T29/5107 ,  Y10T408/37 ,  Y10T483/1738 ,  Y10T483/1795

摘要： A replaceable gang head machine tool unit having a driving motor, the unit being mounted on a slide table arranged to be driven and advance in a given direction wherein: there is provided an annular rail comprising a rear stationary rail and a front movable rail disposed on a machine base, a plurality of gang heads disposed around the annular rail and supported thereon, the plurality of gang heads being arranged to be rotated on the annular rail by an index table to permit any desired gang head to be selected therefrom on the movable rail. When the working unit is in a retreated position in the machine base, the selected head on the movable rail may be joined to the unit for travel therewith together with the movable rail.

摘要翻译： 一种具有驱动电动机的可替换的组头机床单元，所述单元安装在滑动台上，所述滑动台布置成沿给定方向被驱动和前进，其中：设置有环形轨道，所述环形轨道包括后固定轨道和设置在 机架基座，围绕环形导轨设置并支撑在其上的多个组合头，多个组合头被布置成通过分度台在环形导轨上旋转，以允许在活动导轨上从中选择所需的组合头 。 当工作单元处于机器基座中的退避位置时，活动导轨上的所选择的头部可与该单元连接以与可移动导轨一起行进。

公开(公告)号：US4014037A

公开(公告)日：1977-03-22

申请号：US561532

申请日：1975-03-24

申请人： Takeshi Matsushita ,  Hisao Hayashi ,  Teruaki Aoki ,  Hisayoshi Yamoto ,  Yoshiyuki Kawada

发明人： Takeshi Matsushita ,  Hisao Hayashi ,  Teruaki Aoki ,  Hisayoshi Yamoto ,  Yoshiyuki Kawada

IPC分类号： H01L29/73 ,  G02B6/12 ,  H01L21/283 ,  H01L21/314 ,  H01L21/331 ,  H01L21/76 ,  H01L27/04 ,  H01L29/78 ,  H01L29/861 ,  H01L29/34

CPC分类号： H01L21/314 ,  H01L2924/0002 ,  Y10S257/905

摘要： A polycrystalline silicon layer as a passivation layer formed on a semiconductor single crystal layer in a semiconductor device and in which polycrystalline silicon layer contains 2 to 45 atomic percent of oxygen. This layer can be formed under accurate control by utilizing a mixed gas of nitrogen oxide as an oxygen supply source and a silicon compound as a silicon supply source is thermally decomposed. The polycrystalline silicon is constituted of grains comprising single crystals of silicon. Oxygen atoms are uniformly distributed in the grains. Substantially no SiO.sub.2 layer exists between the grains and the semiconductor single crystal layer.

公开(公告)号：US3977019A

公开(公告)日：1976-08-24

申请号：US469841

申请日：1974-05-14

申请人： Takeshi Matsushita ,  Yoshiyuki Kawana

发明人： Takeshi Matsushita ,  Yoshiyuki Kawana

IPC分类号： H01L21/761 ,  H01L21/768 ,  H01L23/522 ,  H01L27/06 ,  H01L27/082 ,  H01L29/00 ,  H01L29/06 ,  H01L29/40 ,  H01L29/41 ,  H01L27/04 ,  H01L27/02 ,  H01L29/04 ,  H01L29/34

CPC分类号： H01L29/408 ,  H01L27/0688 ,  H01L27/0825 ,  H01L29/00 ,  Y10S148/085 ,  Y10S148/122 ,  Y10S148/125

摘要： A semiconductor integrated circuit, in which an isolation region with one conductivity type and a plurality of island regions with another conductivity type separated by the isolation region are provided, is disclosed. In this case, a high resistance polycrystalline semiconductor layer is formed to cover whole of a surface portion of a PN-junction formed between the isolation region and the island regions.

摘要翻译： 公开了一种半导体集成电路，其中提供了具有一种导电类型的隔离区域和由该隔离区域隔开的具有另一导电类型的多个岛区域。 在这种情况下，形成高电阻多晶半导体层以覆盖隔离区域和岛区域之间形成的PN结的整个表面部分。

公开(公告)号：US3971061A

公开(公告)日：1976-07-20

申请号：US470153

申请日：1974-05-15

申请人： Takeshi Matsushita ,  Hisao Hayashi ,  Yoshiyuki Kawana

发明人： Takeshi Matsushita ,  Hisao Hayashi ,  Yoshiyuki Kawana

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L29/00 ,  H01L29/06 ,  H01L29/40 ,  H01L29/861 ,  H01L29/34

CPC分类号： H01L29/408 ,  H01L29/00 ,  H01L29/0619 ,  Y10S148/043 ,  Y10S148/118 ,  Y10S148/122 ,  Y10S148/125

摘要： A semiconductor device is provided having at least two semiconductor regions of opposite conductivity type and forming a planar-type PN junction. A field limiting ring is disposed spaced from the PN junction. A high-resistivity polycrystalline silicon layer covers the PN junction and the field limiting ring.

摘要翻译： 提供具有至少两个相反导电类型的半导体区域并形成平面型PN结的半导体器件。 场限制环设置成与PN结隔开。 高电阻率多晶硅层覆盖PN结和场限制环。

公开(公告)号：USRE45017E1

公开(公告)日：2014-07-15

申请号：US13220372

申请日：2011-08-29

申请人： Takeshi Matsushita ,  Hiroshi Tayanaka

发明人： Takeshi Matsushita ,  Hiroshi Tayanaka

IPC分类号： H01L21/30

CPC分类号： H01L21/76251 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/76259 ,  H01L31/048 ,  H01L31/077 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

摘要： A porous Si layer is formed on a single-crystal Si substrate, and then a p+-type Si layer, p-type Si layer and n+-type Si layer which all make up a solar cell layer. After a protective film is made on the n+-type Si layer, the rear surface of the single-crystal Si substrate is bonded to a tool, and another tool is bonded to the front surface of the protective film. Theo, the tools are pulled in opposite directions to mechanically rupture the porous Si layer and to separate the solar cell layer from the single-crystal substrate. The solar cell layer is subsequently sandwiched between two plastic substrates to make a flexible thin-film solar cell.

摘要翻译： 在单晶Si衬底上形成多孔Si层，然后形成所有构成太阳能电池层的p +型Si层，p型Si层和n +型Si层。 在n +型Si层上形成保护膜后，将单晶Si衬底的背面与刀具接合，另一工具与保护膜的前表面接合。 该工具被拉向相反方向以机械地破裂多孔Si层并将太阳能电池层与单晶衬底分开。 随后将太阳能电池层夹在两个塑料基板之间以制造柔性薄膜太阳能电池。

公开(公告)号：US08152512B2

公开(公告)日：2012-04-10

申请号：US12645083

申请日：2009-12-22

申请人： Takeshi Matsushita ,  Tomonori Katano ,  Shinji Uchida

发明人： Takeshi Matsushita ,  Tomonori Katano ,  Shinji Uchida

IPC分类号： B29C59/00

CPC分类号： B29C59/022 ,  B29C2059/023 ,  G11B5/855 ,  Y10S425/81

摘要： The present invention provides an imprinting apparatus in which stampers, after a transfer step, can be readily and quickly detached from a substrate and an atmosphere in the imprinting apparatus is kept clean. The imprinting device has an ejecting mechanism for separating a recording medium substrate from a first stamper and a second stamper the ejecting mechanism being formed including a sleeve and a coil spring that are movably provided in a movable die base with an exhausting duct, and also including a sleeve and a coil spring that are movably provided in a fixed die base with an exhausting duct.

摘要翻译： 本发明提供了一种压印装置，其中在转印步骤之后，压印机可以容易地并且快速地从基板分离，并且压印装置中的气氛保持清洁。 压印装置具有用于从第一压模和第二压模分离记录介质基板的排出机构，形成有包括套筒和螺旋弹簧的排出机构，该套筒和螺旋弹簧可移动地设置在具有排气管的可动模座中，并且还包括 套筒和螺旋弹簧，其可移动地设置在具有排气管的固定模座中。

公开(公告)号：US07787343B2

公开(公告)日：2010-08-31

申请号：US11915117

申请日：2006-05-01

申请人： Takeshi Matsushita ,  Hiroto Mizouchi

发明人： Takeshi Matsushita ,  Hiroto Mizouchi

IPC分类号： G11B20/00

CPC分类号： H04N9/8042 ,  G11B19/00 ,  H04N5/781 ,  H04N5/85 ,  H04N21/47214

摘要： A recording and reproducing device (1) in which, when the power is turned off, the state of the power can be controlled to be in either one of a first power-off state and a second power-off state in which the recording and reproduction device (1) can be started faster than in the first power-off state. The recording and reproducing device (1) has a “first standby mode” during which the power state of the device is controlled to the first power-off state when the device receives a power-off instruction, and a “second standby mode” during which the power state of the device is controlled to the second power-off state when the device receives a power-off instruction. A power controller (30) makes, according to a setting time zone, the second standby mode active only for a predetermined time zone including the setting time zone.

摘要翻译： 一种记录和再现装置（1），其中当电源关闭时，电源的状态可以被控制为处于第一断电状态和第二断电状态中的任一个，其中记录和再现装置 再现装置（1）可以比在第一断电状态下更快地启动。 记录和再现装置（1）具有“第一待机模式”，在该模式期间，当装置接收到断电指令时，装置的电源状态被控制到第一关机状态，并且在第二备用模式期间 当设备接收到断电指令时，设备的电源状态被控制到第二断电状态。 功率控制器（30）根据设置时间段使第二待机模式仅在包括设置时间段的预定时间区域内有效。