公开(公告)号：US4875087A

公开(公告)日：1989-10-17

申请号：US222303

申请日：1988-07-22

申请人： Akira Miyauchi ,  Hiroshi Nishimoto ,  Tadashi Okiyama ,  Hiroo Kitasagami ,  Masahiro Sugimoto ,  Haruo Tamada ,  Shinji Emori

发明人： Akira Miyauchi ,  Hiroshi Nishimoto ,  Tadashi Okiyama ,  Hiroo Kitasagami ,  Masahiro Sugimoto ,  Haruo Tamada ,  Shinji Emori

IPC分类号： H01L23/02 ,  H01L23/04 ,  H01L23/12 ,  H01L23/50 ,  H01L23/64 ,  H01L23/66 ,  H01P3/08 ,  H01P5/02 ,  H01P5/08 ,  H05K1/02 ,  H05K3/32

CPC分类号： H01L23/642 ,  H01L23/66 ,  H01P5/028 ,  H01P5/08 ,  H01L2223/6616 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01039 ,  H01L2924/01057 ,  H01L2924/14 ,  H01L2924/16152 ,  H01L2924/16195 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H05K1/0237 ,  H05K3/325

摘要： An integrated circuit device including: at least one semiconductor chip (3) having a plurality of circuit elements; a package (21 to 24) enclosing the semiconductor chip with a hermetic seal; and a strip line unit (15-2, 11-1b, 11-2, 20 and 23:15-1, 11-1, 11-2, 11-3, 12-1 and 20) for connecting the circuit elements in the semiconductor chip to circuit outside of the package. The stripline unit having a microstrip line structure and a triplate strip line structure serial-connected to the microstrip line structure and connecting the outside circuits. The triplate strip line structure has a characteristic impedance equal to that of the microstrip line structure so that the strip line unit satisfies the required impedance matching.A center of the conductive layer strip line of the triplate strip line structure has a smaller width than that of a microstrip line of the microstrip line structure to have a predetermined impedance so that the triplate strip line structure has a same characteristic impedance as that of the microstrip line structure.

摘要翻译： 一种集成电路装置，包括：具有多个电路元件的至少一个半导体芯片（3） 包封（21至24），封装具有气密密封的半导体芯片; 以及用于连接电路元件的带状线单元（15-2,11-1b，11-2,20和23：15-1,11-1,11-2,11-3,12-1和20） 半导体芯片到电路外部封装。 带状线单元具有微带线结构和串联连接到微带线结构并连接外部电路的三板条带线结构。 三板条线结构具有与微带线结构相同的特性阻抗，使得带状线单元满足所需的阻抗匹配。 三板条带线结构的导电层带状线的中心具有比微带线结构的微带线更小的宽度以具有预定的阻抗，使得三板条带线结构具有与 微带线结构。

公开(公告)号：US4698663A

公开(公告)日：1987-10-06

申请号：US937414

申请日：1986-12-03

申请人： Masahiro Sugimoto ,  Yasumasa Wakasugi ,  Shigeki Harada

发明人： Masahiro Sugimoto ,  Yasumasa Wakasugi ,  Shigeki Harada

IPC分类号： H01L23/04 ,  H01L23/02 ,  H01L23/055 ,  H01L23/34 ,  H01L23/367

CPC分类号： H01L23/055 ,  H01L23/3675 ,  H01L2224/32225 ,  H01L2924/01079 ,  Y10T29/4913 ,  Y10T29/53174 ,  Y10T29/53178

摘要： A semiconductor device comprises a substrate, a semiconductor element mounted on the substrate, a cap having an opening smaller than the external size of the semiconductor element for covering the semiconductor element to provide a hermetic seal, and a heatsink member mounted on the cap to cover the opening and to make contact with the semiconductor element via the opening, so that heat generated by the semiconductor element is conducted directly to the heatsink member. A method of producing the semiconductor device comprises the steps of mounting the semiconductor element on the substrate, covering the semiconductor element by the cap which is fixed to the substrate, and mounting the heatsink member on the cap to cover the opening and to make contact with the semiconductor element via the opening.

摘要翻译： 半导体器件包括衬底，安装在衬底上的半导体元件，具有比用于覆盖半导体元件以提供气密密封的半导体元件的外部尺寸小的开口的帽以及安装在帽上的散热构件以覆盖 开口，并且经由开口与半导体元件接触，使得由半导体元件产生的热直接传导到散热构件。 一种制造半导体器件的方法包括以下步骤：将半导体元件安装在基板上，通过固定到基板的盖覆盖半导体元件，并将散热构件安装在盖上以覆盖开口并与 半导体元件经由开口。

公开(公告)号：USD276719S

公开(公告)日：1984-12-11

申请号：US397051

申请日：1982-07-12

申请人： Masahiro Sugimoto ,  Hidehiko Akasaki ,  Tetsushi Wakabayashi

设计人： Masahiro Sugimoto ,  Hidehiko Akasaki ,  Tetsushi Wakabayashi

公开(公告)号：US4426657A

公开(公告)日：1984-01-17

申请号：US234196

申请日：1981-02-13

申请人： Akira Abiru ,  Masahiro Sugimoto ,  Juro Inomata

发明人： Akira Abiru ,  Masahiro Sugimoto ,  Juro Inomata

IPC分类号： H01L21/312 ,  H01L23/29 ,  H01L23/31 ,  H01L23/556 ,  H01L27/04 ,  G11C11/40

CPC分类号： H01L23/556 ,  H01L21/312 ,  H01L23/293 ,  H01L23/3171 ,  H01L24/05 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05 ,  H01L2224/45015 ,  H01L2224/48463 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01061 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/014 ,  H01L2924/14

摘要： A semiconductor device having a protective polyimide film layer for preventing .alpha.-rays from intruding into the device is provided. The polyimide film layer has incorporated therein a salient amount of finely divided filler particles, and is formed on the surface of at least a region wherein the semiconductor element is formed. The polyimide film layer is formed by coating the semiconductor substrate with a liquid polyimide or polyamic acid composition having incorporated therein the finely divided filler particles, according to a screen printing method.

摘要翻译： 提供了一种具有用于防止α射线侵入设备的保护性聚酰亚胺膜层的半导体器件。 聚酰亚胺薄膜层中并入有大量细小的填料颗粒，并形成在至少形成半导体元件的区域的表面上。 聚酰亚胺膜层通过根据丝网印刷方法用其中结合有细碎填料颗粒的液体聚酰亚胺或聚酰胺酸组合物涂覆半导体基板而形成。

公开(公告)号：US4216308A

公开(公告)日：1980-08-05

申请号：US974434

申请日：1978-12-29

申请人： Takao Iida ,  Kunikatsu Shirahata ,  Isao Matsubara ,  Masahiro Sugimoto ,  Shinzo Ishii ,  Ryo Okachi ,  Takashi Nara

发明人： Takao Iida ,  Kunikatsu Shirahata ,  Isao Matsubara ,  Masahiro Sugimoto ,  Shinzo Ishii ,  Ryo Okachi ,  Takashi Nara

IPC分类号： C07H15/224 ,  A61K31/71 ,  C07H15/22

CPC分类号： C07H15/224 ,  Y10S435/863

摘要： New antibiotic compounds, Fortimicin factors D and KE are produced by fermentation of microorganisms belonging to the genus Micromonospora. The antibiotic compounds are accumulated in the culture liquor and are isolated therefrom. A semisynthetic method of producing Fortimicin KE utilizing Fortimicin D is also disclosed.

公开(公告)号：US4048015A

公开(公告)日：1977-09-13

申请号：US708681

申请日：1976-07-26

申请人： Takashi Nara ,  Ryo Okachi ,  Mitsuyoshi Yamamoto ,  Yasuki Mori ,  Moriyuki Sato ,  Masahiro Sugimoto ,  Yoshiaki Shimizu

发明人： Takashi Nara ,  Ryo Okachi ,  Mitsuyoshi Yamamoto ,  Yasuki Mori ,  Moriyuki Sato ,  Masahiro Sugimoto ,  Yoshiaki Shimizu

IPC分类号： C07H15/224 ,  C12P1/06 ,  C12P19/48 ,  C12D9/14

CPC分类号： C07H15/224 ,  Y10S435/863

摘要： A new antibiotic, Fortimicin C, is produced by fermentation of a microorganism belonging to the genus Micromonospora. The antibiotic is accumulated in the culture medium and is isolated therefrom.

摘要翻译： 一种新的抗生素Fortimicin C是通过发酵属于小单孢菌属的微生物产生的。 抗生素在培养基中积聚并从中分离。

公开(公告)号：US09136372B2

公开(公告)日：2015-09-15

申请号：US13531793

申请日：2012-06-25

申请人： Shinichiro Miyahara ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

发明人： Shinichiro Miyahara ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/423 ,  H01L29/04 ,  H01L29/08 ,  H01L29/10 ,  H01L29/16

CPC分类号： H01L29/7813 ,  H01L29/045 ,  H01L29/0865 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/7825 ,  H01L29/7827

摘要： In a silicon carbide semiconductor device, a plurality of trenches has a longitudinal direction in one direction and is arranged in a stripe pattern. Each of the trenches has first and second sidewalls extending in the longitudinal direction. The first sidewall is at a first acute angle to one of a (11-20) plane and a (1-100) plane, the second sidewall is at a second acute angle to the one of the (11-20) plane and the (1-100) plane, and the first acute angle is smaller than the second acute angle. A first conductivity type region is in contact with only the first sidewall in the first and second sidewalls of each of the trenches, and a current path is formed on only the first sidewall in the first and second sidewalls.

摘要翻译： 在碳化硅半导体器件中，多个沟槽在一个方向上具有纵向方向并且被布置成条纹图案。 每个沟槽具有在纵向方向上延伸的第一和第二侧壁。 第一侧壁与（11-20）面和（1-100）面中的一个成锐角，第二侧壁与（11-20）面和 （1-100）平面，第一锐角小于第二锐角。 第一导电类型区域仅与每个沟槽的第一和第二侧壁中的第一侧壁接触，并且仅在第一和第二侧壁中的第一侧壁上形成电流路径。

公开(公告)号：US09082815B2

公开(公告)日：2015-07-14

申请号：US14244038

申请日：2014-04-03

申请人： Masahiro Sugimoto ,  Yuichi Takeuchi

发明人： Masahiro Sugimoto ,  Yuichi Takeuchi

IPC分类号： H01L29/739 ,  H01L29/66 ,  H01L29/36 ,  H01L29/423 ,  H01L29/10 ,  H01L29/778 ,  H01L29/16 ,  H01L29/20

CPC分类号： H01L29/7397 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/36 ,  H01L29/4236 ,  H01L29/66348 ,  H01L29/7789

摘要： A semiconductor device disclosed in this specification includes a p+ contact region, an n+ source region, a p− base region, an n− drift region, a gate electrode, an insulator, a p+ electric field alleviating layer, and a p− positive hole extraction region. The electric field alleviating layer has same impurity concentration as the base region or higher, contacts a lower surface of the base region, and is formed in a same depth as the gate trench or in a position deeper than the gate trench. A positive hole extraction region extends to contact the electric field alleviating layer from a position to contact an upper surface of a semiconductor substrate or a first semiconductor region, and extracts a positive hole that is produced in the electric field alleviating layer at the avalanche breakdown to the upper surface of the semiconductor substrate.

摘要翻译： 在本说明书中公开的半导体装置包括p +接触区域，n +源极区域，基极区域，n漂移区域，栅电极，绝缘体，p +电场缓和层和ap-空穴提取区域 。 电场缓和层具有与基底区域相同的杂质浓度或更高的接触基底区域的下表面，并且形成在与栅极沟槽相同的深度或比栅极沟槽更深的位置。 正空穴提取区域延伸以从与半导体衬底或第一半导体区域的上表面接触的位置接触电场缓和层，并且在雪崩击穿时提取在电场减轻层中产生的正空穴 半导体衬底的上表面。

公开(公告)号：US20140175459A1

公开(公告)日：2014-06-26

申请号：US13994855

申请日：2012-02-06

申请人： Kensaku Yamamoto ,  Masato Noborio ,  Hideo Matsuki ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Narumasa Soejima ,  Tsuyoshi Ishikawa ,  Yukihiko Watanabe

发明人： Kensaku Yamamoto ,  Masato Noborio ,  Hideo Matsuki ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Narumasa Soejima ,  Tsuyoshi Ishikawa ,  Yukihiko Watanabe

IPC分类号： H01L29/78 ,  H01L29/16 ,  H01L29/66

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/66348 ,  H01L29/7397

摘要： A SiC semiconductor device includes: a semiconductor switching element having: a substrate, a drift layer and a base region stacked in this order; a source region and a contact region in the base region; a trench extending from a surface of the source region to penetrate the base region; a gate electrode on a gate insulating film in the trench; a source electrode electrically coupled with the source region and the base region; a drain electrode on a back side of the substrate; and multiple deep layers in an upper portion of the drift layer deeper than the trench. Each deep layer has upper and lower portions. A width of the upper portion is smaller than the lower portion.

摘要翻译： SiC半导体器件包括：半导体开关元件，其具有：依次层叠的基板，漂移层和基极区域; 源极区域和基极区域中的接触区域; 从源极区域的表面延伸以穿透基部区域的沟槽; 沟槽中的栅极绝缘膜上的栅电极; 源极，与源极区域和基极区域电耦合; 位于所述基板的背面的漏电极; 以及在漂移层的上部比沟槽更深的多个深层。 每个深层具有上部和下部。 上部的宽度小于下部。

公开(公告)号：US08608298B2

公开(公告)日：2013-12-17

申请号：US13087286

申请日：2011-04-14

申请人： Yuji Kanome ,  Hiroyuki Tanaka ,  Yoshiaki Suzuki ,  Seiji Suzuki ,  Masahiro Sugimoto ,  Takeaki Nakano ,  Susumu Hirosawa

发明人： Yuji Kanome ,  Hiroyuki Tanaka ,  Yoshiaki Suzuki ,  Seiji Suzuki ,  Masahiro Sugimoto ,  Takeaki Nakano ,  Susumu Hirosawa

IPC分类号： B41J2/175

CPC分类号： B41J2/17509 ,  B41J2/17596

摘要： Provided is a printing apparatus in which bubbles in a print head are easily removed. The printing apparatus includes a first one-way valve disposed between the pump and the ink tank in the collection channel, the first one-way valve allowing movement of ink from the pump to the ink tank and blocking movement of ink from the ink tank to the pump; a circulation channel that connects the ink tank to the collection channel at a position between the pump and the first one-way valve, the circulation channel enabling circulation of ink from the ink tank, through the print head, and to the ink tank; and a second one-way valve disposed in the circulation channel, the second one-way valve allowing movement of ink from the ink tank to the pump and blocking movement of ink from the pump to the ink tank.

摘要翻译： 提供了一种其中容易去除打印头中的气泡的打印设备。 打印装置包括设置在收集通道中的泵和墨水罐之间的第一单向阀，第一单向阀允许墨水从泵移动到墨水盒并阻止墨水从墨水盒移动到 泵; 循环通道，其在所述泵和所述第一单向阀之间的位置处将所述墨水罐连接到所述收集通道，所述循环通道使得能够从所述墨水罐通过所述打印头和所述墨水罐循环墨水; 以及设置在所述循环通道中的第二单向阀，所述第二单向阀允许墨从所述墨罐移动到所述泵并阻止墨从所述泵移动到所述墨槽。