公开(公告)号：US20110151590A1

公开(公告)日：2011-06-23

申请号：US12846664

申请日：2010-07-29

申请人： James D. Carducci ,  Srinivas D. Nemani ,  Hairong Tang ,  Hui Sun ,  Igor Markovsky ,  Ezra R. Gold ,  Iwalani S. Kaya ,  Ellie Y. Yieh ,  Chunlei Zhang ,  Kenneth S. Collins ,  Michael D. Armacost ,  Ajit Balakrishna ,  Thorsten B. Lill

发明人： James D. Carducci ,  Srinivas D. Nemani ,  Hairong Tang ,  Hui Sun ,  Igor Markovsky ,  Ezra R. Gold ,  Iwalani S. Kaya ,  Ellie Y. Yieh ,  Chunlei Zhang ,  Kenneth S. Collins ,  Michael D. Armacost ,  Ajit Balakrishna ,  Thorsten B. Lill

IPC分类号： H01L21/00 ,  C23C16/50 ,  H01L21/465

CPC分类号： H01L21/3105 ,  H01L21/31058 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76831

摘要： A method, a system and a computer readable medium for integrated in-vacuo repair of low-k dielectric thin films damaged by etch and/or strip processing. A repair chamber is integrated onto a same platform as a plasma etch and/or strip chamber to repair a low-k dielectric thin film without breaking vacuum between the damage event and the repair event. UV radiation may be provided on the integrated etch/repair platform in any combination of before, after, or during the low-k repair treatment to increase efficacy of the repair treatment and/or stability of repair.

摘要翻译： 一种用于通过蚀刻和/或条带处理损坏的低k电介质薄膜的真正真正修复的方法，系统和计算机可读介质。 修复室与等离子体蚀刻和/或剥离室集成在相同的平台上，以修复低k电介质薄膜，而不破坏损坏事件和修复事件之间的真空。 紫外线辐射可以在低k修复处理之前，之后或期间以任何组合提供在集成蚀刻/修复平台上，以增加修复处理的效力和/或修复的稳定性。

公开(公告)号：US07745352B2

公开(公告)日：2010-06-29

申请号：US11845445

申请日：2007-08-27

申请人： Abhijit Basu Mallick ,  Srinivas D. Nemani ,  Timothy W. Weidman

发明人： Abhijit Basu Mallick ,  Srinivas D. Nemani ,  Timothy W. Weidman

IPC分类号： H01L21/31 ,  H01L21/469 ,  B05D3/00

CPC分类号： H01L21/31633 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02337 ,  H01L21/3105 ,  H01L21/31608

摘要： Methods of curing a silicon oxide layer on a substrate are provided. The methods may include the processes of providing a semiconductor processing chamber and a substrate and forming an silicon oxide layer overlying at least a portion of the substrate, the silicon oxide layer including carbon species as a byproduct of formation. The methods may also include introducing an acidic vapor into the semiconductor processing chamber, the acidic vapor reacting with the silicon oxide layer to remove the carbon species from the silicon oxide layer. The methods may also include removing the acidic vapor from the semiconductor processing chamber. Systems to deposit a silicon oxide layer on a substrate are also described.

摘要翻译： 提供了在基板上固化氧化硅层的方法。 所述方法可以包括提供半导体处理室和衬底以及形成覆盖衬底的至少一部分的氧化硅层的过程，所述氧化硅层包括作为形成副产物的碳物质。 所述方法还可以包括将酸性蒸气引入半导体处理室，酸性蒸汽与氧化硅层反应以从氧化硅层去除碳物质。 所述方法还可以包括从半导体处理室去除酸性蒸汽。 还描述了在衬底上沉积氧化硅层的系统。

公开(公告)号：US07524750B2

公开(公告)日：2009-04-28

申请号：US11553772

申请日：2006-10-27

申请人： Srinivas D. Nemani ,  Young S. Lee ,  Ellie Y. Yieh ,  Anchuan Wang ,  Jason Thomas Bloking ,  Lung-Tien Han

发明人： Srinivas D. Nemani ,  Young S. Lee ,  Ellie Y. Yieh ,  Anchuan Wang ,  Jason Thomas Bloking ,  Lung-Tien Han

IPC分类号： H01L21/20

CPC分类号： H01L21/76224

摘要： A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.

摘要翻译： 提供了一种在设置在处理室中的衬底上沉积氧化硅膜的工艺。 包括卤素源，流动气体，硅源和氧化性气体反应物的处理气体流入处理室。 从处理气体形成具有至少1011个离子/ cm 3的离子密度的等离子体。 氧化硅膜以低于1.0％的卤素浓度沉积在衬底上。 使用具有同时沉积和溅射组分的工艺，用等离子体沉积氧化硅膜。 卤素源到处理室的流速与硅源到处理室的流速基本上在0.5和3.0之间。

公开(公告)号：US20090104789A1

公开(公告)日：2009-04-23

申请号：US11876541

申请日：2007-10-22

申请人： Abhijit Basu Mallick ,  Jeffrey C. Munro ,  Linlin Wang ,  Srinivas D. Nemani ,  Yi Zheng ,  Zheng Yuan ,  Dimitry Lubomirsky ,  Ellie Y. Yieh

发明人： Abhijit Basu Mallick ,  Jeffrey C. Munro ,  Linlin Wang ,  Srinivas D. Nemani ,  Yi Zheng ,  Zheng Yuan ,  Dimitry Lubomirsky ,  Ellie Y. Yieh

IPC分类号： H01L21/31

CPC分类号： H01L21/31612 ,  C23C16/045 ,  C23C16/24 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/76837

摘要： A method of forming a silicon oxide layer on a substrate. The method includes providing a substrate and forming a first silicon oxide layer overlying at least a portion of the substrate, the first silicon oxide layer including residual water, hydroxyl groups, and carbon species. The method further includes exposing the first silicon oxide layer to a plurality of silicon-containing species to form a plurality of amorphous silicon components being partially intermixed with the first silicon oxide layer. Additionally, the method includes annealing the first silicon oxide layer partially intermixed with the plurality of amorphous silicon components in an oxidative environment to form a second silicon oxide layer on the substrate. At least a portion of amorphous silicon components are oxidized to become part of the second silicon oxide layer and unreacted residual hydroxyl groups and carbon species in the second silicon oxide layer are substantially removed.

摘要翻译： 在基板上形成氧化硅层的方法。 该方法包括提供衬底并形成覆盖衬底的至少一部分的第一氧化硅层，第一氧化硅层包括残留的水，羟基和碳类。 该方法还包括将第一氧化硅层暴露于多个含硅物质以形成与第一氧化硅层部分混合的多个非晶硅组分。 此外，该方法包括在氧化环境中将与多个非晶硅组分部分混合的第一氧化硅层退火以在衬底上形成第二氧化硅层。 至少一部分非晶硅组分被氧化成第二氧化硅层的一部分，并且基本上去除了第二氧化硅层中未反应的残余羟基和碳物质。

公开(公告)号：US20090061647A1

公开(公告)日：2009-03-05

申请号：US11845445

申请日：2007-08-27

申请人： Abhijit Basu Mallick ,  Srinivas D. Nemani ,  Timothy W. Weidman

发明人： Abhijit Basu Mallick ,  Srinivas D. Nemani ,  Timothy W. Weidman

IPC分类号： H01L21/31

CPC分类号： H01L21/31633 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02337 ,  H01L21/3105 ,  H01L21/31608

摘要： Methods of curing a silicon oxide layer on a substrate are provided. The methods may include the processes of providing a semiconductor processing chamber and a substrate and forming an silicon oxide layer overlying at least a portion of the substrate, the silicon oxide layer including carbon species as a byproduct of formation. The methods may also include introducing an acidic vapor into the semiconductor processing chamber, the acidic vapor reacting with the silicon oxide layer to remove the carbon species from the silicon oxide layer. The methods may also include removing the acidic vapor from the semiconductor processing chamber. Systems to deposit a silicon oxide layer on a substrate are also described.

摘要翻译： 提供了在基板上固化氧化硅层的方法。 所述方法可以包括提供半导体处理室和衬底以及形成覆盖衬底的至少一部分的氧化硅层的过程，所述氧化硅层包括作为形成副产物的碳物质。 所述方法还可以包括将酸性蒸气引入半导体处理室，酸性蒸汽与氧化硅层反应以从氧化硅层去除碳物质。 所述方法还可以包括从半导体处理室去除酸性蒸汽。 还描述了在衬底上沉积氧化硅层的系统。

公开(公告)号：US20070243693A1

公开(公告)日：2007-10-18

申请号：US11553772

申请日：2006-10-27

申请人： Srinivas D. Nemani ,  Young S. Lee ,  Ellie Y. Yieh ,  Anchuan Wang ,  Jason Thomas Bloking ,  Lung-Tien Han

发明人： Srinivas D. Nemani ,  Young S. Lee ,  Ellie Y. Yieh ,  Anchuan Wang ,  Jason Thomas Bloking ,  Lung-Tien Han

IPC分类号： H01L21/76

CPC分类号： H01L21/76224

摘要： A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.

摘要翻译： 提供了一种在设置在处理室中的衬底上沉积氧化硅膜的工艺。 包括卤素源，流动气体，硅源和氧化性气体反应物的处理气体流入处理室。 从处理气体形成离子密度为至少10 11个/ cm 3的等离子体。 氧化硅膜以低于1.0％的卤素浓度沉积在衬底上。 使用具有同时沉积和溅射组分的工艺，用等离子体沉积氧化硅膜。 卤素源到处理室的流速与硅源到处理室的流速基本上在0.5和3.0之间。

公开(公告)号：US06815373B2

公开(公告)日：2004-11-09

申请号：US10124655

申请日：2002-04-16

申请人： Vinita Singh ,  Srinivas D. Nemani ,  Yi Zheng ,  Lihua Li ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Ellie Yieh

发明人： Vinita Singh ,  Srinivas D. Nemani ,  Yi Zheng ,  Lihua Li ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Ellie Yieh

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633

摘要： A method for depositing a low dielectric constant film having a dielectric constant of about 3.5 or less is provided by blending one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, and one or more low molecular weight aliphatic hydrocarbon compounds. In one aspect, a gas mixture comprising one or more cyclic organosilicon compounds, one or more aliphatic organosilicon compounds, one or more aliphatic hydrocarbon compounds, one or more oxidizing gases, and a carrier gas is reacted at conditions sufficient to deposit a low dielectric constant film on a substrate surface.

摘要翻译： 通过混合一种或多种环状有机硅化合物，一种或多种脂族有机硅化合物和一种或多种低分子量脂族烃化合物，提供介电常数为约3.5或更低的低介电常数膜的沉积方法。 一方面，包含一种或多种环状有机硅化合物，一种或多种脂族有机硅化合物，一种或多种脂族烃化合物，一种或多种氧化性气体和载气的气体混合物在足以沉积低介电常数的条件下反应 薄膜在基材表面上。

公开(公告)号：US06531398B1

公开(公告)日：2003-03-11

申请号：US09702600

申请日：2000-10-30

申请人： Frederic Gaillard ,  Li-Qun Xia ,  Ellie Yieh ,  Paul Fisher ,  Srinivas D. Nemani

发明人： Frederic Gaillard ,  Li-Qun Xia ,  Ellie Yieh ,  Paul Fisher ,  Srinivas D. Nemani

IPC分类号： H01L2100

CPC分类号： H01L21/76828 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76835

摘要： A method of forming an organosilicate layer is disclosed. The organosilicate layer is formed by applying an electric field to a gas mixture comprising an organosilane compound and an oxygen-containing gas. The organosilicate layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the organosilicate layer is used as an intermetal dielectric layer. In another integrated circuit fabrication process, the organosilicate layer is incorporated into a damascene structure.

摘要翻译： 公开了形成有机硅酸盐层的方法。 有机硅酸盐层通过向包含有机硅烷化合物和含氧气体的气体混合物施加电场而形成。 有机硅酸盐层与集成电路制造工艺兼容。 在一个集成电路制造工艺中，有机硅酸盐层用作金属间介电层。 在另一集成电路制造工艺中，有机硅酸盐层被结合到镶嵌结构中。