公开(公告)号：US20070034874A1

公开(公告)日：2007-02-15

申请号：US11584524

申请日：2006-10-23

申请人： Tatsuya Arao ,  Takeshi Noda ,  Takuya Matsuo ,  Hidehito Kitakado ,  Masanori Kyoho

发明人： Tatsuya Arao ,  Takeshi Noda ,  Takuya Matsuo ,  Hidehito Kitakado ,  Masanori Kyoho

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： H01L27/124 ,  H01L27/1214 ,  H01L27/1259 ,  H01L29/6675 ,  H01L29/78621 ,  H01L29/78648

摘要： A semiconductor device that can be manufactured with a reduced cost by decreasing the number of masks is disclosed, and a method for manufacturing the semiconductor device is disclosed. The method for manufacturing the semiconductor device comprises the steps of: forming a semiconductor layer 3 having a source and a drain regions 10, 11, and LDD regions 16, 17; a gate insulating film 5; and a gate electrode 6; forming a first and a second interlayer insulating films 24, 25 over the gate electrode 6 and the gate insulating film 5; forming contact holes 25a, 25c to these interlayer insulating films so as to be located over each of the source region and the drain region; and an opening portion 25b to these interlayer insulating films so as to be located over the gate electrode and the LDD region; forming a second gate electrode 26b by a conductive film in the opening portion so as to cover the gate electrode and the LDD region; and a pixel electrode 26a over the second interlayer insulating film; removing the gate insulating film in the contact hole; and forming wirings 27, 28 connected to each the source region and the drain region.

摘要翻译： 公开了可以通过减少掩模数而降低成本的半导体器件，并且公开了一种用于制造半导体器件的方法。 制造半导体器件的方法包括以下步骤：形成具有源极和漏极区域10,11以及LDD区域16,17的半导体层3; 栅极绝缘膜5; 和栅电极6; 在栅极电极6和栅极绝缘膜5上形成第一和第二层间绝缘膜24,25; 向这些层间绝缘膜形成接触孔25a，25c，以便位于源极区域和漏极区域之上; 和这些层间绝缘膜的开口部分25b，以便位于栅电极和LDD区之上; 通过开口部中的导电膜形成第二栅电极26b，以覆盖栅电极和LDD区; 以及在第二层间绝缘膜上的像素电极26a; 去除接触孔中的栅极绝缘膜; 以及形成连接到每个源极区域和漏极区域的布线27,28。

公开(公告)号：US20060232203A1

公开(公告)日：2006-10-19

申请号：US11386187

申请日：2006-03-22

申请人： Takeshi Noda

发明人： Takeshi Noda

IPC分类号： H01J1/62

CPC分类号： H01L33/26 ,  H01L51/5048 ,  H01L51/5203 ,  H01L51/5209 ,  H05B33/24

摘要： It is an object of the present invention to provide a light-emitting device in which, even when a material with high reflectivity such as aluminum is used for an electrode, a layer containing oxygen can be formed over the electrode without increasing contact resistance and a manufacturing method thereof. According to the present invention, a feature thereof is a light-emitting element having an electrode composed of a stacked structure where a conductive film having high reflectivity such as aluminum, silver, and an alloy containing aluminum or an alloy containing silver, and a conductive film composed of a refractory metal material is provided over the conductive film, or a light-emitting device having the light-emitting element.

公开(公告)号：US20060163597A1

公开(公告)日：2006-07-27

申请号：US11318783

申请日：2005-12-27

申请人： Takeshi Noda ,  Masayuki Sakakura ,  Yasuyuki Arai ,  Yuko Tachimura

发明人： Takeshi Noda ,  Masayuki Sakakura ,  Yasuyuki Arai ,  Yuko Tachimura

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/58 ,  H01L27/322 ,  H01L27/3244 ,  H01L33/44 ,  H01L33/60 ,  H01L51/5281 ,  H01L2251/558

摘要： It is an object of the present invention to provide a high-contrast light-emitting device without using a polarization plate. In particular, it is an object of the present invention to make contrast control simpler for a light-emitting device provided with a color filter. A light-emitting device according to the present invention has a feature of having a structure for reducing reflection of light from a light-emitting later at a reflective electrode, and further, has a feature of absorbing wavelengths other than the light by a color filter to enhance the contrast. Accordingly, contrast control can be performed in consideration of only a luminescence component from the light-emitting layer, and is thus made simpler.

公开(公告)号：US20050170569A1

公开(公告)日：2005-08-04

申请号：US10991482

申请日：2004-11-19

申请人： Akio Yazaki ,  Mikio Hongo ,  Mutsuko Hatano ,  Takeshi Noda

发明人： Akio Yazaki ,  Mikio Hongo ,  Mutsuko Hatano ,  Takeshi Noda

IPC分类号： G02F1/1345 ,  B23K26/00 ,  B23K26/06 ,  B23K26/073 ,  B23K26/42 ,  G02F1/136 ,  G02F1/1368 ,  G09G3/36 ,  G09G3/38 ,  H01L21/00 ,  H01L21/20 ,  H01L21/268 ,  H01L21/324 ,  H01L21/336 ,  H01L21/84 ,  H01L29/786

CPC分类号： B23K26/073 ,  B23K26/702 ,  H01L27/14625

摘要： A mechanism for always measuring the spatial intensity distribution of a laser beam and displacement of the optical axis of the laser beam is provided so that a measured signal is processed when the laser beam incident on a laser beam shaping optical element is out of a predetermined condition. The shape, diameter and incidence position of the laser beam incident on the laser beam shaping optical element are always kept in the predetermined condition by a spatial filter disposed at the position of a focal point of lenses forming a beam expander disposed in the optical axis, on the basis of a result of the signal processing. In this manner, silicon thin films uniform in crystallinity can be formed stably with a high yield on an insulating substrate which forms display panels of flat panel display devices.

摘要翻译： 提供用于总是测量激光束的空间强度分布和激光束的光轴位移的机构，使得当入射到激光束整形光学元件上的激光束处于预定条件时，处理测量信号 。 入射到激光束整形光学元件上的激光束的形状，直径和入射位置总是通过设置在设置在光轴上的形成光束扩展器的透镜的焦点的位置处的空间滤光器保持在预定条件， 基于信号处理的结果。 以这种方式，可以在形成平板显示装置的显示面板的绝缘基板上以高产率稳定地形成结晶度均匀的硅薄膜。

公开(公告)号：US20050082537A1

公开(公告)日：2005-04-21

申请号：US10963822

申请日：2004-10-14

申请人： Tatsuya Arao ,  Takeshi Noda ,  Takuya Matsuo ,  Hidehito Kitakado ,  Masanori Kyoho

发明人： Tatsuya Arao ,  Takeshi Noda ,  Takuya Matsuo ,  Hidehito Kitakado ,  Masanori Kyoho

IPC分类号： G02F1/1343 ,  G02F1/1368 ,  H01L21/20 ,  H01L21/28 ,  H01L21/336 ,  H01L21/77 ,  H01L21/86 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L29/04

CPC分类号： H01L27/124 ,  H01L27/1214 ,  H01L27/1259 ,  H01L29/6675 ,  H01L29/78621 ,  H01L29/78648

摘要： A semiconductor device that can be manufactured with a reduced cost by decreasing the number of masks is disclosed, and a method for manufacturing the semiconductor device is disclosed. The method for manufacturing the semiconductor device comprises the steps of: forming a semiconductor layer 3 having a source and a drain regions 10, 11, and LDD regions 16, 17; a gate insulating film 5; and a gate electrode 6; forming a first and a second interlayer insulating films 24, 25 over the gate electrode 6 and the gate insulating film 5; forming contact holes 25a, 25c to these interlayer insulating films so as to be located over each of the source region and the drain region; and an opening portion 25b to these interlayer insulating films so as to be located over the gate electrode and the LDD region; forming a second gate electrode 26b by a conductive film in the opening portion so as to cover the gate electrode and the LDD region; and a pixel electrode 26a over the second interlayer insulating film; removing the gate insulating film in the contact hole; and forming wirings 27, 28 connected to each the source region and the drain region.

摘要翻译： 公开了可以通过减少掩模数而降低成本的半导体器件，并且公开了一种用于制造半导体器件的方法。 制造半导体器件的方法包括以下步骤：形成具有源极和漏极区域10,11以及LDD区域16,17的半导体层3; 栅极绝缘膜5; 和栅电极6; 在栅极电极6和栅极绝缘膜5上形成第一和第二层间绝缘膜24,25; 向这些层间绝缘膜形成接触孔25a，25c，以便位于源极区域和漏极区域之上; 和这些层间绝缘膜的开口部分25b，以便位于栅电极和LDD区之上; 通过开口部中的导电膜形成第二栅电极26b，以覆盖栅电极和LDD区; 以及在第二层间绝缘膜上的像素电极26a; 去除接触孔中的栅极绝缘膜; 以及形成连接到每个源极区域和漏极区域的布线27,28。

公开(公告)号：US09093402B2

公开(公告)日：2015-07-28

申请号：US13099804

申请日：2011-05-03

申请人： Masayuki Sakakura ,  Takeshi Noda ,  Hideaki Kuwabara ,  Shunpei Yamazaki

发明人： Masayuki Sakakura ,  Takeshi Noda ,  Hideaki Kuwabara ,  Shunpei Yamazaki

IPC分类号： H01L51/00 ,  H01L27/32 ,  H01L51/50 ,  H01L51/52 ,  H01L51/56

CPC分类号： H01L27/3244 ,  H01L27/322 ,  H01L27/3248 ,  H01L51/0011 ,  H01L51/5052 ,  H01L51/5206 ,  H01L51/5209 ,  H01L51/5218 ,  H01L51/56 ,  H01L2251/5315

摘要： A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.

摘要翻译： 将提供一种有源矩阵发光器件的制造方法，其中有源矩阵发光器件可以在较短的时间内以较低的成本与常规的低成本制造。 本发明的特征在于，与配置在有源矩阵型发光元件的像素区域中的每个TFT的半导体层接触或电连接的金属电极采用分层结构。 此外，金属电极被部分蚀刻并用作发光元件的第一电极。 缓冲层，含有有机化合物的层和第二电极层层叠在第一电极上。

公开(公告)号：US08803150B2

公开(公告)日：2014-08-12

申请号：US13596089

申请日：2012-08-28

申请人： Takeshi Noda ,  Tetsufumi Kawamura

发明人： Takeshi Noda ,  Tetsufumi Kawamura

IPC分类号： H01L29/04 ,  H01L31/20 ,  H01L29/786 ,  H01L27/12

CPC分类号： H01L29/786 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1225 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

摘要： Provided a display device including a thin film transistor. The thin film transistor includes a gate electrode, a gate insulating layer which covers the gate electrode, an oxide semiconductor film above the gate insulating layer, a source electrode and a drain electrode which are respectively provided in contact with a first region and a second region, which are provided in the upper surface of the oxide semiconductor film, and a channel protective film which is provided in contact with a third region between the first region and the second region. In plan view, a region of the oxide semiconductor film, which overlaps with the gate electrode, is smaller than the third region, and a portion of the oxide semiconductor film except for a portion which overlaps with the gate electrode has a resistance lower than the portion.

摘要翻译： 提供一种包括薄膜晶体管的显示装置。 薄膜晶体管包括栅极电极，覆盖栅电极的栅极绝缘层，栅极绝缘层上方的氧化物半导体膜，源电极和漏电极，其分别设置为与第一区域和第二区域接触 ，设置在所述氧化物半导体膜的上表面中，以及沟道保护膜，所述沟道保护膜设置成与所述第一区域和所述第二区域之间的第三区域接触。 在平面图中，与栅电极重叠的氧化物半导体膜的区域小于第三区域，除了与栅电极重叠的部分之外的一部分氧化物半导体膜的电阻比 一部分。

公开(公告)号：US08655034B2

公开(公告)日：2014-02-18

申请号：US12971563

申请日：2010-12-17

申请人： Takeshi Noda

发明人： Takeshi Noda

IPC分类号： G06K9/00 ,  G06K9/40

CPC分类号： G06T5/002 ,  A61B6/505 ,  A61B6/5258 ,  G06T5/50 ,  G06T2207/10016 ,  G06T2207/10116 ,  G06T2207/20201 ,  G06T2207/20224 ,  H04N5/32 ,  H04N5/3658

摘要： An information processing apparatus comprises: a spatial filtering unit configured to perform spatial filtering in a frequency range based on a spatial frequency of an object for image data of a current frame; and a recursive filtering unit configured to perform recursive filtering by obtaining image data, which has been processed prior to the current frame, from a memory, multiplying the obtained image data by a coefficient α (α

摘要翻译： 一种信息处理装置，包括：空间滤波单元，被配置为基于当前帧的图像数据的对象的空间频率在频率范围中执行空间滤波; 以及递归滤波单元，被配置为通过从存储器获得已经在当前帧处理的图像数据来执行递归滤波，将所获得的图像数据乘以系数α（α<1），将所乘以的图像数据乘以 在空间滤波之后的当前帧的图像数据的系数α，并且将添加后的图像数据存储在存储器中。

公开(公告)号：US08309976B2

公开(公告)日：2012-11-13

申请号：US13035029

申请日：2011-02-25

申请人： Shunpei Yamazaki ,  Takeshi Noda ,  Yoshinari Higaki

发明人： Shunpei Yamazaki ,  Takeshi Noda ,  Yoshinari Higaki

IPC分类号： H01L51/52

CPC分类号： H01L51/56 ,  H01L27/3244 ,  H01L27/3246 ,  H01L51/5203 ,  H01L51/5206 ,  H01L51/5209 ,  H01L51/5218 ,  H01L51/5271 ,  H01L51/5284 ,  H01L2251/56

摘要： A light emission device manufactured by a method of forming a curved surface having a radius of curvature to the upper end of an insulator 19, exposing a portion of the first electrode 18c to form an inclined surface in accordance with the curved surface, and applying etching so as to expose the first electrode 18b in a region to form a light emission region, in which emitted light from the layer containing the organic compound 20 is reflected on the inclined surface of the first electrode 18c to increase the total take-out amount of light in the direction of an arrow shown in FIG. 1A and, further, forming a light absorbing multi-layered film 24 comprising light absorbing multi-layered film on the first electrode 18c other than the region to form the light emission region, thereby obtaining a light emission device of a structure increasing the amount of light emission taken out in one direction in a light emission element, while not all the light formed in the layer containing the organic compound are taken out from the cathode as a transparent electrode toward TFT but the light was emitted also, for example, in the lateral direction (direction parallel with the plane of the substrate).

摘要翻译： 一种发光装置，其是通过在绝缘体19的上端形成具有曲率半径的曲面的方法制造的，使第一电极18c的一部分根据弯曲表面形成倾斜面，并施加蚀刻 以便将第一电极18b暴露在区域中以形成发光区域，其中来自含有有机化合物20的层的发射光在第一电极18c的倾斜表面上被反射，以增加第一电极18b的总取出量 在图1所示的箭头方向上的光。 此外，在除了该区域之外的第一电极18c上形成包含吸光多层膜的吸光多层膜24以形成发光区域，从而获得结构增加的结构的发光装置 在发光元件中沿一个方向取出的发光，而不是所有在含有有机化合物的层中形成的光都从作为TFT的透明电极的阴极中取出，但是也例如在 横向（与基板的平面平行的方向）。

公开(公告)号：US08288831B2

公开(公告)日：2012-10-16

申请号：US12984623

申请日：2011-01-05

申请人： Takeshi Noda ,  Hidehito Kitakado ,  Takuya Matsuo

发明人： Takeshi Noda ,  Hidehito Kitakado ,  Takuya Matsuo

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/66757 ,  H01L29/42384 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78675

摘要： A semiconductor device, which can improve the effect of a hydrogenation treatment in case of using a GOLD structure, and a method of manufacturing thereof is provided. A gate insulating film is formed on a semiconductor layer, and a source region, a drain region, and LDD regions are formed in the semiconductor layer. A main gate is formed on the gate insulating film. A sub-gate is formed on the main gate and the gate insulating film so as to cover a part of the main gate and either the LDD regions adjacent to the source region or the drain region. An interlayer insulating film containing hydrogen is formed on the sub-gate, main gate, and gate insulating film. Subsequently, a heat treatment for hydrogenation is performed to terminate a crystal defect of the semiconductor layer with hydrogen.

摘要翻译： 提供了可以提高在使用GOLD结构的情况下氢化处理的效果的半导体器件及其制造方法。 在半导体层上形成栅极绝缘膜，在半导体层中形成源极区，漏极区，LDD区。 在栅极绝缘膜上形成主栅极。 在主栅极和栅极绝缘膜上形成子栅极，以覆盖主栅极的一部分和与源极区域或漏极区域相邻的LDD区域。 在子栅极，主栅极和栅极绝缘膜上形成含有氢的层间绝缘膜。 随后，进行用于氢化的热处理，以氢终止半导体层的晶体缺陷。