公开(公告)号：US07286229B1

公开(公告)日：2007-10-23

申请号：US11220045

申请日：2005-09-06

Applicant: Steven W. Meeks

Inventor： Steven W. Meeks

IPC: G01J4/00

CPC classification number: G01N21/21 ,  G01B11/0641 ,  G01B11/303 ,  G01N21/8422 ,  G01N21/9501 ,  G01N21/9503 ,  G01N2021/218

Abstract: In one embodiment a system to detect multi-domain regions in the soft under layer of a perpendicular magnetic media comprises a radiation targeting assembly to target a polarized radiation beam onto a surface of a substrate covered by the soft under layer of a perpendicular magnetic media, a radiation collecting assembly that collects radiation reflected from the surface, a processor coupled to the first radiation collecting assembly, and a memory module coupled to the processor. The memory module comprises logic instructions which, when executed by the processor, configure the processor to record signal values from radiation reflected by the radiation beam at different positions on the surface and analyze the signal values to detect a region of multiple magnetic domains in the soft under layer of a perpendicular magnetic media.

Abstract translation: 在一个实施例中，用于检测垂直磁介质的软底层中的多畴区域的系统包括辐射瞄准组件，以将偏振辐射束对准到由垂直磁性介质的软底层覆盖的衬底的表面上， 收集从表面反射的辐射的辐射收集组件，耦合到第一辐射收集组件的处理器以及耦合到处理器的存储器模块。 所述存储器模块包括逻辑指令，所述逻辑指令在由所述处理器执行时将所述辐射束反射的辐射的信号值配置在所述表面上的不同位置处，并且分析所述信号值以检测所述软的多个磁畴的区域 垂直磁性介质下层。

公开(公告)号：US07283882B1

公开(公告)日：2007-10-16

申请号：US11355598

申请日：2006-02-15

Applicant: Itai Bransky ,  Shachor Omer ,  Arkady Simkin ,  Igor Baskin

Inventor： Itai Bransky ,  Shachor Omer ,  Arkady Simkin ,  Igor Baskin

IPC: G06F19/00

CPC classification number: G05B19/408 ,  G05B2219/32097 ,  G05B2219/36016 ,  G05B2219/45031

Abstract: Automated comparison of tool recipes is described. A target recipe is digitally translated from a tool language to a standard language format to produce a translated recipe. The translated recipe is digitally compared to a source recipe that is also in the standard language format.

Abstract translation: 描述了工具配方的自动比较。 将目标食谱从工具语言数字翻译成标准语言格式，以产生翻译的食谱。 翻译的食谱与标准语言格式的源食谱进行数字比较。

公开(公告)号：US07276694B1

公开(公告)日：2007-10-02

申请号：US11092545

申请日：2005-03-29

Applicant: Kirk J. Bertsche

Inventor： Kirk J. Bertsche

IPC: H01J37/28

CPC classification number: H01J37/244 ,  H01J2237/2446 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/24485 ,  H01J2237/24495

Abstract: One embodiment disclosed relates to an apparatus for detecting defects in substrates. An irradiation source is configured to generate an incident beam, and a lens system configured to focus the incident beam onto a target substrate so as to cause emission of electrons. A multiple-bin detector is configured to detect the emitted electrons, and each bin of the detector detects the emitted electrons within a range of energies. A processing system configured to process signals from the multiple-bin detector. Other embodiments are also disclosed.

Abstract translation: 公开的一个实施例涉及用于检测基板中的缺陷的装置。 照射源被配置为产生入射光束，以及透镜系统，被配置为将入射光束聚焦到目标衬底上以引起电子的发射。 多埠检测器被配置为检测发射的电子，并且检测器的每一个检测器在能量范围内检测发射的电子。 一种被配置为处理来自多仓检测器的信号的处理系统。 还公开了其他实施例。

公开(公告)号：US07274445B1

公开(公告)日：2007-09-25

申请号：US11078462

申请日：2005-03-11

Applicant: Steven W. Meeks

Inventor： Steven W. Meeks

IPC: G01N21/00 ,  G01B27/40

CPC classification number: G01N21/958 ,  G01N21/9501 ,  G01N2021/8967

Abstract: A problem in the inspection of transparent wafers and disks is the detection of top surface particles. More precisely, it is being able to assign a scattering site as being due to a particle at the top or bottom surface of a transparent wafer. A method of the present invention is to use an elliptical mirror, with a pinhole at its top focus, together with a focused beam. The focused beam will diverge as it passes through the transparent wafer and as a result any particle on the bottom surface will see a lower optical intensity and will appear weaker than a top surface particle. The suppression of scattered light from the bottom surface occurs because the source of the scattered light (the bottom surface) is far from the bottom foci of the elliptical mirror. This means that the light from the bottom surface, which arrives inside the ellipsoid, will be out of focus at the top foci of the ellipsoid and as a result very little light from the bottom surface will pass through the pinhole at the top foci of the elliptical mirror. This reduction of light from the bottom surface can be further improved by making the pinhole diameter to be substantially less than the thickness of the transparent wafer.

Abstract translation: 检查透明晶片和盘片的问题是检测顶表面颗粒。 更准确地说，它能够将散射位置分配为由于在透明晶片的顶表面或底表面处的颗粒。 本发明的一种方法是使用椭圆镜与其聚焦光束一起在其顶焦点处具有针孔。 聚焦光束在透过透明晶片时会发散，因此底面上的任何颗粒将会看到较低的光学强度，并且会比顶表面颗粒显得更弱。 由于散射光源（底面）远离椭圆镜的底部焦点，因此抑制来自底面的散射光。 这意味着来自底面的光到达椭圆体的内部将会在椭圆顶部的焦点处失焦，因此来自底面的很少的光将穿过位于椭圆体的顶部焦点处的针孔 椭圆镜。 通过使针孔直径基本上小于透明晶片的厚度，可以进一步提高来自底面的光的这种减少。

公开(公告)号：US07253410B1

公开(公告)日：2007-08-07

申请号：US11225917

申请日：2005-09-13

Applicant: Kirk J. Bertsche ,  John Greene

Inventor： Kirk J. Bertsche ,  John Greene

IPC: H01J37/244

CPC classification number: H01J37/026 ,  H01J37/263 ,  H01J37/28 ,  H01J2237/0044 ,  H01J2237/0048 ,  H01J2237/2809 ,  H01J2237/2817

Abstract: One embodiment described relates to a method of electron beam imaging of a target area of a substrate. An electron beam column is configured for charge-control pre-scanning using a primary electron beam. A pre-scan is performed over the target area. The electron beam column is re-configured for imaging using the primary electron beam. An imaging scan is then performed over the target area. Other embodiments are also described.

Abstract translation: 所描述的一个实施例涉及对基板的目标区域进行电子束成像的方法。 电子束列被配置为使用一次电子束进行电荷控制预扫描。 在目标区域上执行预扫描。 电子束列被重新配置成使用一次电子束成像。 然后在目标区域上执行成像扫描。 还描述了其它实施例。

公开(公告)号：US20070171547A1

公开(公告)日：2007-07-26

申请号：US11594634

申请日：2006-11-08

Applicant: David Shafer ,  Yung-Ho Chuang

Inventor： David Shafer ,  Yung-Ho Chuang

IPC: G02B17/00

CPC classification number: G02B21/04 ,  G02B13/143 ,  G02B17/0804 ,  G02B17/0808 ,  G02B17/0856 ,  G02B17/0892 ,  G03F7/70225

Abstract: A high performance objective having very small central obscuration, an external pupil for apertureing and Fourier filtering, loose manufacturing tolerances, large numerical aperture, long working distance, and a large field of view is presented. The objective is preferably telecentric. The design is ideally suited for both broad-band bright-field and laser dark field imaging and inspection at wavelengths in the UV to VUV spectral range.

Abstract translation: 提出了具有非常小的中心遮蔽性的高性能物镜，用于孔径和傅立叶滤波的外部光瞳，宽的制造公差，大的数值孔径，长的工作距离和大的视场。 目标最好是远心的。 该设计非常适用于紫外至紫外光谱范围波长的宽带亮场和激光暗场成像和检测。

公开(公告)号：US20070158303A1

公开(公告)日：2007-07-12

申请号：US11622625

申请日：2007-01-12

Applicant: MEHRAN NASSER-GHODSI ,  Garrett Pickard ,  Rudy Garcia ,  Ming Yu ,  Kenneth Krzeczowski ,  Matthew Lent ,  Sergey Lopatin ,  Chris Huang ,  Niles MacDonald

Inventor： MEHRAN NASSER-GHODSI ,  Garrett Pickard ,  Rudy Garcia ,  Ming Yu ,  Kenneth Krzeczowski ,  Matthew Lent ,  Sergey Lopatin ,  Chris Huang ,  Niles MacDonald

IPC: C23F1/00 ,  A61N5/00 ,  B44C1/22 ,  G21G5/00

CPC classification number: C23F4/00 ,  G02B5/1857 ,  H01J2237/31744 ,  H01L21/3065 ,  H01L21/32136 ,  H01L29/66795

Abstract: Structural modification using electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam. Structural modifications of the target may be conducted by means of etching due to interaction between the electron beam and gas composition.

Abstract translation: 公开了使用电子束活化化学蚀刻（EBACE）的结构修饰。 当气体组合物和/或靶暴露于电子束时，靶或其部分可暴露于蚀刻靶的类型的气体组合物。 通过在气体组合物附近引导电子束朝向靶，电子束和气体组成之间的相互作用会蚀刻暴露于气体组成和电子束两者的靶的一部分。 由于电子束和气体组成之间的相互作用，靶的结构修饰可以通过蚀刻进行。

公开(公告)号：US20070121107A1

公开(公告)日：2007-05-31

申请号：US11594625

申请日：2006-11-08

Applicant: Bin-Ming Tsai ,  Yung-Ho Chuang ,  J. Armstrong ,  David Brown

Inventor： Bin-Ming Tsai ,  Yung-Ho Chuang ,  J. Armstrong ,  David Brown

IPC: G01N21/88

CPC classification number: G02B17/0808 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/95607 ,  G01N2021/479 ,  G01N2021/8825 ,  G01N2021/95676 ,  G01N2201/06113 ,  G02B17/0856 ,  G02B17/0892 ,  G02B21/04 ,  G03F7/70225

Abstract: A system and method for inspecting a specimen, such as a semiconductor wafer, including illuminating at least a portion of the specimen using an excimer source using at least one relatively intense wavelength from the source, detecting radiation received from the illuminated portion of the specimen, analyzing the detected radiation for potential defects present in the specimen portion.

Abstract translation: 一种用于检查诸如半导体晶片的样本的系统和方法，包括使用来自所述源的至少一个相对较强的波长的准分子源照射所述样本的至少一部分，检测从所述被照射部分接收的辐射， 分析检测到的辐射对于存在于样品部分中的潜在缺陷。

公开(公告)号：US07217924B1

公开(公告)日：2007-05-15

申请号：US11205367

申请日：2005-08-16

Applicant: Marian Mankos ,  Eric Munro

Inventor： Marian Mankos ,  Eric Munro

IPC: H01J37/26 ,  G01N23/225

CPC classification number: H01J37/05 ,  H01J37/147 ,  H01J37/153 ,  H01J37/26 ,  H01J37/29 ,  H01J2237/0044 ,  H01J2237/063 ,  H01J2237/151 ,  H01J2237/2446 ,  H01J2237/262

Abstract: One embodiment relates to an apparatus for generating a dual-energy electron beam. A first electron beam source is configured to generate a lower-energy electron beam, and a second electron beam source is configured to generate a higher-energy electron beam. A holey mirror is biased to reflect the lower-energy electron beam. The holey mirror also includes an opening therein through which passes the higher-energy electron beam, thereby forming the dual-energy electron beam. A prism array combiner introduces a first dispersion between the lower-energy electron beam and the higher-energy electron beam within the dual-energy electron beam. A prism array separator is configured to separate the dual-energy electron beam traveling to a substrate from a scattered electron beam traveling away from the substrate. The prism array separator introduces a second dispersion which compensates for the dispersion of the prism array combiner. Other embodiments are also disclosed.

Abstract translation: 一个实施例涉及一种用于产生双能量电子束的装置。 第一电子束源被配置为产生较低能量的电子束，并且第二电子束源被配置为产生较高能量的电子束。 有孔镜被偏置以反射较低能量的电子束。 多孔镜还包括其中通过高能电子束的开口，从而形成双能电子束。 棱镜阵列组合器在双能电子束内引入低能电子束与高能电子束之间的第一色散。 棱镜阵列分离器被配置为将从衬底传播的散射电子束分离到衬底行进的双能电子束。 棱镜阵列分离器引入补偿棱镜阵列组合器的色散的第二色散。 还公开了其他实施例。

公开(公告)号：US07202094B2

公开(公告)日：2007-04-10

申请号：US11245291

申请日：2005-10-05

Applicant: Tony DiBiase

Inventor： Tony DiBiase

IPC: H01L21/66

CPC classification number: H01L22/20 ,  H01L22/34

Abstract: A process which addresses the problem of transient defects comprises first processing one or more test chips on a substrate to reveal one or more potential transient defects during subsequent processing of all of the chips on the substrate; identifying the exact locations of such potential transient defects on one or more chips of a silicon substrate; forming a file containing the coordinates of each potential transient defect on the chip; converting the file into a CAD image layer capable of displaying such potential transient defects; and displaying such potential transient defects superimposed over a CAD image of the actual circuit to permit visual inspection of the compound CAD image and to permit optional action to be taken in view of such potential transient defects. In another embodiment of the invention, the file containing the locations of the potential transient defects is transmitted to a metrology apparatus such as a critical dimension (CD) scanning electron microscope (SEM) which monitors the potential transient defect addresses during processing of the chip. The two embodiments of the invention may be practiced in the alternative or in combination with one another.

Abstract translation: 解决瞬态缺陷问题的过程包括首先处理衬底上的一个或多个测试芯片，以在衬底上的所有芯片的后续处理期间露出一个或多个潜在的瞬态缺陷; 识别硅衬底的一个或多个芯片上的这种潜在瞬态缺陷的确切位置; 形成包含芯片上每个潜在瞬态缺陷的坐标的文件; 将文件转换成能够显示这种潜在的瞬时缺陷的CAD图像层; 并且显示叠加在实际电路的CAD图像上的这种潜在的瞬时缺陷，以允许目视检查复合CAD图像，并且考虑到这种潜在的瞬时缺陷，允许采取可选的动作。 在本发明的另一个实施例中，将包含潜在瞬变缺陷的位置的文件传送到计量装置，例如临界尺寸（CD）扫描电子显微镜（SEM），其在芯片处理期间监测潜在的瞬时缺陷地址。 本发明的两个实施例可以以替代方式或彼此组合来实践。