公开(公告)号：US5503725A

公开(公告)日：1996-04-02

申请号：US146043

申请日：1993-12-13

Applicant: Leonid P. Sablev ,  Anatoly A. Andreev ,  Sergei N. Crigoriev ,  Alexandr S. Metel

Inventor： Leonid P. Sablev ,  Anatoly A. Andreev ,  Sergei N. Crigoriev ,  Alexandr S. Metel

IPC: C23C8/36 ,  C23C14/02 ,  C23C14/32 ,  H01J27/08 ,  H01J37/32 ,  C23C14/34

CPC classification number: H01J37/32055 ,  C23C14/022 ,  C23C14/325 ,  C23C8/36 ,  H01J27/08 ,  H01J37/32623 ,  H01J37/34 ,  H01J2237/08 ,  H01J2237/3387

Abstract: A method for treatment of products in gas-discharge plasma consists in that a two-step vacuum-arc discharge is initiated between an anode (3) and an integrally cold cathode (2), featuring a metal-gaseous step of plasma and a gaseous step of plasma. The gaseous step of plasma is established by ionizing the working gas with electrons separated from the metal-gaseous step of plasma. Then a product (5) under treatment is preheated to working temperature and held in a preset temperature range. To this end, provision is made in the device for a means (13) for electron separation from the metal-gaseous step of plasma, which means is situated in the zone of the integrally cold cathode (2) and is impermeable to the metal ions generated by the cathode (2). In a particular case the means (13) is made as a set of V-shaped plates (14).

Abstract translation: PCT No.PCT / RU92 / 00088 Sec。 371日期：1993年12月13日 102（e）日期1993年12月13日PCT提交1992年4月23日PCT公布。 出版物WO92 / 19785 日本1992年11月12日。一种用于处理气体放电等离子体中的产物的方法，在阳极（3）和整体冷阴极（2）之间开始两步骤真空电弧放电， 等离子体的气态步骤和等离子体的气态步骤。 通过用从等离子体的金属 - 气体步骤分离的电子离子化工作气体来建立等离子体的气态步骤。 然后将处理的产品（5）预热至工作温度并保持在预设的温度范围内。 为此，在装置中设置用于从等离子体的金属 - 气态步骤进行电子分离的装置（13），其意味着位于整体冷阴极（2）的区域中并且对金属离子是不可渗透的 由阴极（2）产生。 在特定情况下，装置（13）被制成一组V形板（14）。

公开(公告)号：US5352899A

公开(公告)日：1994-10-04

申请号：US931697

申请日：1992-08-18

Applicant: Konstantin S. Golovanivsky ,  Erazm M. Omeljanovsky

Inventor： Konstantin S. Golovanivsky ,  Erazm M. Omeljanovsky

IPC: H01J27/02 ,  H01J37/30

CPC classification number: H01J27/024 ,  H01J37/3007 ,  H01J2237/08 ,  H01J2237/31755

Abstract: Methods and apparatus for etching ultra fine lines of impurities on semiconductors and other materials. A cold diverging ion beam is generated, made to converge, encoded using a mask to correspond to an image, and then used to etch impurities on the substrate. An ECR plasma source is used to generate a warm plasma. A cooled neutral target gas is penetrated by the warm plasma ions so that the plasma ion charge is transferred to the cool target gas to provide cool ions, which are then extracted to provide a cryogenic ion beam. The ion beam is made converging and then encoded by the mask. The ion beam also may be transformed into an atom beam in a charge exchange cell.

Abstract translation: 在半导体和其他材料上蚀刻超细杂质线的方法和装置。 产生冷发散离子束，使其使用掩模进行会聚，对应于图像，然后用于蚀刻衬底上的杂质。 ECR等离子体源用于产生温和的等离子体。 冷却的中性目标气体被热等离子体离子穿透，使得等离子体离子电荷转移到冷目标气体以提供冷离子，然后将其提取以提供低温离子束。 使离子束会聚，然后由掩模进行编码。 离子束也可以转变成电荷交换单元中的原子束。

公开(公告)号：US20230360970A1

公开(公告)日：2023-11-09

申请号：US17738028

申请日：2022-05-06

Applicant: Intel Corporation

Inventor： Elijah V. KARPOV ,  Matthew METZ ,  Robert WILLONER

IPC: H01L21/768 ,  H01J37/32

CPC classification number: H01L21/76877 ,  H01J37/32009 ,  H01J2237/332 ,  H01J2237/08

Abstract: The present disclosure is directed to semiconductor deposition tools having a specimen support, at least one ion gun directed to a specimen positioned on the specimen support, at least one source, and at least one electron beam gun directed at the source. In an aspect, the electron beam guns, sources, and ion beam guns are positioned below the specimen support and specimen positioned thereon, which has its top surface facing downward. In another aspect, the method includes activating the electron beam gun and depositing the source material in a trench in the specimen and on surfaces adjacent to the opening of the trench and activating the ion beam gun to remove portions of the source material deposited on the surfaces adjacent to the opening of the trench.

公开(公告)号：US11699563B2

公开(公告)日：2023-07-11

申请号：US17339085

申请日：2021-06-04

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Neil Bassom ,  Xiao Xu

IPC: H01J27/22 ,  H01J37/08

CPC classification number: H01J27/22 ,  H01J37/08 ,  H01J2237/08 ,  H01J2237/31701

Abstract: An ion implantation system, ion source, and method are provided, where an ion source is configured to ionize an aluminum-based ion source material and to form an ion beam and a by-product including a non-conducting material. An etchant gas mixture has a predetermined concentration of fluorine and a noble gas that is in fluid communication with the ion source. The predetermined concentration of fluorine is associated with a predetermined health safety level, such as approximately a 20% maximum concentration of fluorine. The etchant gas mixture can have a co-gas with a concentration less than approximately 5% of argon. The aluminum-based ion source material can be a ceramic member, such as a repeller shaft, a shield, or other member within the ion source.

公开(公告)号：US09997335B2

公开(公告)日：2018-06-12

申请号：US15596937

申请日：2017-05-16

Applicant: Ximan Jiang

Inventor： Ximan Jiang

IPC: H01J37/00 ,  H01J37/32

CPC classification number: H01J37/32357 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/32623 ,  H01J37/32935 ,  H01J2237/08

Abstract: A method to improve plasma discharge efficiency by attaching one or more booster chambers to the main discharge chamber is disclosed here. The booster chamber functions as a plasma discharge amplification device for the main discharge chamber. It improves plasma density significantly, especially at pressure below 50 mTorr. Compared with traditional inductively coupled plasma (ICP) source, the strength of the plasma source enhanced with booster chamber has been improved several folds at low pressure conditions. Booster chamber can also be used as a convenient high speed plasma etching and deposition processing chamber for small samples. A method to gauge plasma strength by measuring plasma emission intensity has also been disclosed in this application.

公开(公告)号：US09691592B2

公开(公告)日：2017-06-27

申请号：US15092625

申请日：2016-04-07

Applicant: Ximan Jiang

Inventor： Ximan Jiang

IPC: H01J37/00 ,  H01J37/32

CPC classification number: H01J37/32357 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/32623 ,  H01J37/32935 ,  H01J2237/08

Abstract: A method to improve plasma discharge efficiency by attaching one or more booster chambers to the main discharge chamber is disclosed here. The booster chamber functions as a plasma discharge amplification device for the main discharge chamber. It improves plasma density significantly, especially at pressure below 50 mTorr. Compared with traditional inductively coupled plasma (ICP) source, the strength of the plasma source enhanced with booster chamber has been improved several folds at low pressure conditions. Booster chamber can also be used as a convenient high speed plasma etching and deposition processing chamber for small samples. A method to gauge plasma strength by measuring plasma emission intensity has also been disclosed in this application.

公开(公告)号：US20170133201A1

公开(公告)日：2017-05-11

申请号：US15320104

申请日：2014-09-25

Applicant: Mitsubishi Electric Corporation

Inventor： Sunao AYA

IPC: H01J37/317 ,  H01J37/08 ,  H01J37/18

CPC classification number: H01J37/3171 ,  H01J27/08 ,  H01J37/08 ,  H01J37/18 ,  H01J2237/006 ,  H01J2237/08

Abstract: A vacuum is maintained inside a vacuum partition (1). The whole of the solid packed container (3) is disposed inside the vacuum partition (1). A heater (7) sublimates the aluminum chloride (8) packed in lid packed container (3) to generate an aluminum chloride gas (9). An arc chamber (6) ionizes the aluminum chloride gas (9) and emits an ion beam (11) of the ionized aluminum chloride gas (9). A gas supply nozzle (10) leads the aluminum oride gas (9) from the solid packed container (3) into the arc chamber (6). A supporting part (4) supports and fixes the solid packed container (3) on the vacuum partition (1). A thermal conductivity of the supporting part (4) is lower than thermal conductivities of the vacuum partition (1) and the solid packed container (3).

公开(公告)号：US20170032941A1

公开(公告)日：2017-02-02

申请号：US15293367

申请日：2016-10-14

Applicant: Praxair Technology, Inc.

Inventor： Ashwini K. Sinha ,  Stanley M. Smith ,  Douglas C. Heiderman ,  Serge M. Campeau

IPC: H01J37/32 ,  C01B3/00

CPC classification number: H01J37/3171 ,  C01B3/00 ,  H01J27/22 ,  H01J37/08 ,  H01J37/32458 ,  H01J37/32807 ,  H01J2237/006 ,  H01J2237/0473 ,  H01J2237/08 ,  H01J2237/0815 ,  H01J2237/31701 ,  H01J2237/3365 ,  Y02E60/324

Abstract: A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

Abstract translation: 提供了一种用于在硼离子注入期间改善束电流的新型组成，系统和方法。 在优选的方面，硼离子注入工艺涉及在特定浓度范围内使用B2H6，11BF3和H2。 在生成和注入活性氢离子物质期间使用的离子源的工作电弧电压下，选择B2H6具有高于BF 3的电离横截面。 氢气允许更高水平的B 2 H 6被引入BF 3中而不减少F离子清除。 当与常规硼前体材料产生的束电流相比时，活性硼离子产生改进的束电流，其特征在于保持或增加束电流水平而不引起离子源的劣化。

公开(公告)号：US09552958B2

公开(公告)日：2017-01-24

申请号：US14189506

申请日：2014-02-25

Applicant: Weatherford/Lamb, Inc.

Inventor： Kultaransingh N. Hooghan

IPC: H01J37/20 ,  H01J37/28 ,  G01N23/225 ,  G01N1/32

CPC classification number: H01J37/20 ,  G01N1/32 ,  G01N23/2251 ,  G01N23/2255 ,  G01N2223/616 ,  H01J37/28 ,  H01J2237/08 ,  H01J2237/202 ,  H01J2237/3174 ,  H01J2237/31749

Abstract: A method for using a Focused Ion Beam and/or Scanning Electron Microscope (FIB/SEM) for etching one or more alignment markers on a rock sample, the one or more alignment markers being etched on the rock sample using the FIB/SEM. The one or more alignment markers may further be deposited with a platinum alloy or other suitable compositions for increasing alignment marker visibility.

Abstract translation: 使用聚焦离子束和/或扫描电子显微镜（FIB / SEM）蚀刻岩石样品上的一个或多个对准标记物的方法，使用FIB / SEM在岩石样品上蚀刻一个或多个对准标记。 一个或多个对准标记可以进一步用铂合金或其它合适的组合物沉积，以增加对准标记的可视性。

公开(公告)号：US09455116B2

公开(公告)日：2016-09-27

申请号：US14692395

申请日：2015-04-21

Applicant: Axcelis Technologies, Inc.

Inventor： Causon Ko-Chuan Jen ,  William Bintz

IPC: H01J37/00 ,  H01J37/147 ,  H01J37/20 ,  H01J37/317

CPC classification number: H01J37/1474 ,  H01J37/1478 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/08 ,  H01J2237/1506 ,  H01J2237/151 ,  H01J2237/152 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/31701 ,  H01J2237/31708

Abstract: An ion implantation system and method is provided for varying an angle of incidence of a scanned ion beam relative to the workpiece concurrent with the scanned ion beam impacting the workpiece. The system has an ion source configured to form an ion beam and a mass analyzer configured to mass analyze the ion beam. An ion beam scanner is configured to scan the ion beam in a first direction, therein defining a scanned ion beam. A workpiece support is configured to support a workpiece thereon, and an angular implant apparatus is configured to vary an angle of incidence of the scanned ion beam relative to the workpiece. The angular implant apparatus comprises one or more of an angular energy filter and a mechanical apparatus operably coupled to the workpiece support, wherein a controller controls the angular implant apparatus, thus varying the angle of incidence of the scanned ion beam relative to the workpiece concurrent with the scanned ion beam impacting the workpiece.

Abstract translation: 提供离子注入系统和方法，用于与扫描的离子束同时冲击工件，改变扫描离子束相对于工件的入射角。 该系统具有构造成形成离子束的离子源和被配置为质量分析离子束的质量分析器。 离子束扫描器被配置成沿着第一方向扫描离子束，其中限定扫描的离子束。 工件支撑件构造成在其上支撑工件，并且角度注入装置被配置为改变扫描离子束相对于工件的入射角。 角植入装置包括角度能量过滤器和可操作地耦合到工件支撑件的机械装置中的一个或多个，其中控制器控制角度注入装置，从而改变扫描离子束相对于工件的入射角度，同时与 扫描的离子束撞击工件。