公开(公告)号：US20070262297A1

公开(公告)日：2007-11-15

申请号：US11432760

申请日：2006-05-10

申请人： Salvatore Leonardi ,  Claudia Caligiore ,  Guglielmo Fortunato ,  Luigi Mariucci ,  Stefano Cipolloni ,  Francesco Angelis

发明人： Salvatore Leonardi ,  Claudia Caligiore ,  Guglielmo Fortunato ,  Luigi Mariucci ,  Stefano Cipolloni ,  Francesco Angelis

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L51/0545 ,  H01L51/004 ,  H01L51/0533 ,  H01L51/105

摘要： An organic thin-film transistor device integrated on a substrate and comprising at least an organic active layer and metallic contact regions realized on an insulating layer. Advantageously the organic thin-film transistor device further comprises a thin buffer layer of polymethylmetacrylate or PMMA realized between the metallic contact regions and the organic active layer. A process for manufacturing an organic thin-film transistor device is also described.

摘要翻译： 一种集成在基板上并且至少包括在绝缘层上实现的有机活性层和金属接触区域的有机薄膜晶体管器件。 有利地，有机薄膜晶体管器件还包括在金属接触区域和有机活性层之间实现的聚甲基丙烯酸甲酯或PMMA的缓冲缓冲层。 还描述了制造有机薄膜晶体管器件的工艺。

公开(公告)号：US20070126003A1

公开(公告)日：2007-06-07

申请号：US11672908

申请日：2007-02-08

申请人： Masahiko ANDO ,  Masatoshi WAKAGI ,  Hiroshi SASAKI

发明人： Masahiko ANDO ,  Masatoshi WAKAGI ,  Hiroshi SASAKI

IPC分类号： H01L29/08

CPC分类号： H01L51/0545 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0012 ,  H01L51/0021 ,  H01L51/0023 ,  H01L51/0036 ,  H01L51/0039 ,  H01L51/0533

摘要： The present method prevents malfunctions in switching caused by a light leakage current in an active matrix type thin film transistor substrate for a liquid crystal display and prevents display failures, by selectively disposing a self assembled monolayer film in a gate electrode-projected region of the surface of an insulator film with high definition, and by selectively improving the orientation order of an organic semiconductor film only in the gate electrode-projected region without improving the order at an irradiated portion with light outside the gate electrode-projected region.

摘要翻译： 本方法通过在表面的栅极电极投影区域中选择性地配置自组装单层膜来防止由液晶显示器的有源矩阵型薄膜晶体管基板中的漏光电流引起的切换中的故障，并且防止显示故障 具有高清晰度的绝缘体膜，并且仅通过选择性地改善栅极电极投影区域中的有机半导体膜的取向顺序，而不改善栅极电极投影区域外的光的照射部分的阶数。

公开(公告)号：US20070099333A1

公开(公告)日：2007-05-03

申请号：US11589217

申请日：2006-10-30

申请人： Soichi Moriya

发明人： Soichi Moriya

IPC分类号： H01L21/00

CPC分类号： H01L51/0533 ,  G02F1/1368 ,  H01L21/31608 ,  H01L51/0012 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/0516 ,  H01L51/0545

摘要： Aspects of the invention can provide a thin-film transistor having good transistor characteristics and operable with a low driving voltage, a method of producing such a thin-film transistor, a high-reliability electronic circuit, a display, and an electronic device. In an exemplary thin-film transistor according to the invention, a gate electrode can be formed on a substrate via an underlying layer, and a gate insulating layer can be formed on the substrate such that the gate electrode is covered with the gate insulating layer. A source electrode and a drain electrode are formed on the gate insulating layer such that they are separated from each other by a gap formed just above the gate electrode. An organic semiconductor layer can be formed thereon such that the electrodes are covered with the organic semiconductor layer. A region between the electrodes of the organic semiconductor layer functions as a channel region. A protective layer can be arranged on the organic semiconductor layer. This thin-film transistor is characterized in that the organic semiconductor layer is formed after the gate insulating layer is formed, and the gate insulating layer has the capability of causing the organic semiconductor layer to be aligned.

摘要翻译： 本发明的方面可以提供具有良好的晶体管特性并且可以以低驱动电压工作的薄膜晶体管，制造这种薄膜晶体管的方法，高可靠性电子电路，显示器和电子器件。 在根据本发明的示例性薄膜晶体管中，可以通过下层在基板上形成栅极电极，并且可以在基板上形成栅极绝缘层，使得栅极电极被栅极绝缘层覆盖。 源电极和漏电极形成在栅极绝缘层上，使得它们通过形成在栅电极正上方的间隙彼此分离。 可以在其上形成有机半导体层，使得电极被有机半导体层覆盖。 有机半导体层的电极之间的区域用作沟道区域。 可以在有机半导体层上设置保护层。 该薄膜晶体管的特征在于，在形成栅极绝缘层之后形成有机半导体层，并且栅极绝缘层具有使有机半导体层对准的能力。

公开(公告)号：US07211463B2

公开(公告)日：2007-05-01

申请号：US10948341

申请日：2004-09-24

申请人： Tarng-Shiang Hu ,  Jia-Chong Ho ,  Liang-Ying Huang ,  Wei-Ling Lin

发明人： Tarng-Shiang Hu ,  Jia-Chong Ho ,  Liang-Ying Huang ,  Wei-Ling Lin

IPC分类号： H01L51/40 ,  H01L21/84

CPC分类号： H01L51/0533 ,  H01L51/0545

摘要： The invention related to a process for improving carrier mobility of organic semiconductor, comprising the steps of: forming a gate on a substrate; forming an insulator layer on the substrate and the gate; coating polyimide on the insulator layer to form an interlayer; forming an active layer on the interlayer; and forming a source and a drain.

摘要翻译： 本发明涉及一种改善有机半导体载流子迁移率的方法，包括以下步骤：在衬底上形成栅极; 在基板和栅极上形成绝缘体层; 在绝缘体层上涂覆聚酰亚胺以形成中间层; 在中间层上形成活性层; 并形成源极和漏极。

公开(公告)号：US20070090352A1

公开(公告)日：2007-04-26

申请号：US11582534

申请日：2006-10-18

申请人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park ,  Seok-Jong Lee ,  Jung-Han Shin

发明人： Taek Ahn ,  Min-Chul Suh ,  Jin-Seong Park ,  Seok-Jong Lee ,  Jung-Han Shin

IPC分类号： H01L29/08

CPC分类号： H01L51/0533 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L51/0545

摘要： A thin film transistor includes: a gate electrode; source and drain electrodes insulated from the gate electrode; an organic semiconductor layer that is insulated from the gate electrode and is electrically connected to the source and drain electrodes; an insulating layer that insulates the gate electrode from the source and drain electrodes or the organic semiconductor layer; and an ohmic contact layer that is interposed between the source/drain electrodes and the organic semiconductor and contains a compound having a hole transporting unit. By providing the ohmic contact layer, the ohmic contact between source/drain electrodes and the organic semiconductor layer can be effectively achieved and the adhesive force between the source/drain electrodes and the organic semiconductor layer is increased. In addition, a flat panel display having improved reliability can be obtained using the thin film transistor.

摘要翻译： 薄膜晶体管包括：栅电极; 源极和漏极与栅电极绝缘; 与栅电极绝缘并与源电极和漏电极电连接的有机半导体层; 绝缘层，其使栅电极与源极和漏电极或有机半导体层绝缘; 以及介于源/漏电极和有机半导体之间并包含具有空穴传输单元的化合物的欧姆接触层。 通过设置欧姆接触层，可以有效地实现源/漏电极和有机半导体层之间的欧姆接触，并且增加源/漏电极和有机半导体层之间的粘合力。 此外，可以使用薄膜晶体管获得具有提高的可靠性的平板显示器。

公开(公告)号：US07202496B2

公开(公告)日：2007-04-10

申请号：US10970224

申请日：2004-10-21

申请人： Masahiko Ando ,  Masatoshi Wakagi ,  Hiroshi Sasaki

发明人： Masahiko Ando ,  Masatoshi Wakagi ,  Hiroshi Sasaki

IPC分类号： H01L35/24 ,  H01L21/4763

CPC分类号： H01L51/0545 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0012 ,  H01L51/0021 ,  H01L51/0023 ,  H01L51/0036 ,  H01L51/0039 ,  H01L51/0533

摘要： The present method prevents malfunctions in switching caused by a light leakage current in an active matrix type thin film transistor substrate for a liquid crystal display and prevents display failures, by selectively disposing a self assembled monolayer film in a gate electrode-projected region of the surface of an insulator film with high definition, and by selectively improving the orientation order of an organic semiconductor film only in the gate electrode-projected region without improving the order at an irradiated portion with light outside the gate electrode-projected region.

摘要翻译： 本方法通过在表面的栅极电极投影区域中选择性地配置自组装单层膜来防止由液晶显示器的有源矩阵型薄膜晶体管基板中的漏光电流引起的切换中的故障，并且防止显示故障 具有高清晰度的绝缘体膜，并且仅通过选择性地改善栅极电极投影区域中的有机半导体膜的取向顺序，而不改善栅极电极投影区域外的光的照射部分的阶数。

公开(公告)号：US20070012914A1

公开(公告)日：2007-01-18

申请号：US10555614

申请日：2005-03-09

申请人： Daisuke Miura ,  Tomonari Nakayama ,  Toshinobu Ohnishi ,  Makoto Kubota ,  Akane Masumoto ,  Hidetoshi Tsuzuki ,  Makiko Miyachi

发明人： Daisuke Miura ,  Tomonari Nakayama ,  Toshinobu Ohnishi ,  Makoto Kubota ,  Akane Masumoto ,  Hidetoshi Tsuzuki ,  Makiko Miyachi

IPC分类号： H01L29/08

CPC分类号： H01L51/0512 ,  H01L51/0012 ,  H01L51/0077 ,  H01L51/0078 ,  H01L51/0533 ,  H01L51/0545

摘要： There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.

摘要翻译： 提供了具有有机半导体层的场效应晶体管，包括：至少含有卟啉的有机半导体层; 以及由至少聚硅氧烷化合物构成的层，该层层叠在有机半导体层上以与有机半导体层紧密接触。 结果，可以提供能够形成具有高结晶度和高取向性的有机半导体层并具有高迁移率的场效应晶体管。

公开(公告)号：US07132680B2

公开(公告)日：2006-11-07

申请号：US10456749

申请日：2003-06-09

申请人： Ali Afzali-Ardakani ,  Christos D. Dimitrakopoulos

发明人： Ali Afzali-Ardakani ,  Christos D. Dimitrakopoulos

IPC分类号： H01L35/24 ,  H01L51/00

CPC分类号： H01L51/0068 ,  B82Y10/00 ,  B82Y30/00 ,  H01L51/0006 ,  H01L51/0036 ,  H01L51/0038 ,  H01L51/0076 ,  H01L51/0094 ,  H01L51/0533 ,  H01L51/0541 ,  H01L51/0545

摘要： An organic field-effect transistor and a method of making the same include a self-assembled monolayer (SAM) of bifunctional molecules disposed between a pair of electrodes as a channel material. The pair of electrodes and the SAM of bifunctional molecules are formed above an insulating layer, in which each of the bifunctional molecules comprises a functionality at a first end that covalently bonds to the insulating layer, and an end-cap functionality at a second end that includes a conjugated bond. The SAM of bifunctional molecules may be polymerized SAM to form a conjugated polymer strand extending between the pair of electrodes.

摘要翻译： 有机场效应晶体管及其制造方法包括设置在作为沟道材料的一对电极之间的双功能分子的自组装单层（SAM）。 双功能分子的一对电极和SAM形成在绝缘层上方，其中每个双功能分子在第一端包含与绝缘层共价键合的官能团，以及在第二端的端帽功能， 包括共轭键。 双功能分子的SAM可以聚合SAM以形成在该对电极之间延伸的共轭聚合物链。

公开(公告)号：US20060151778A1

公开(公告)日：2006-07-13

申请号：US10520131

申请日：2003-07-03

申请人： Margherita Fontana ,  Henning Sirringhaus ,  Paul Smith ,  Natalie Stutzmann ,  Walter Caseri

发明人： Margherita Fontana ,  Henning Sirringhaus ,  Paul Smith ,  Natalie Stutzmann ,  Walter Caseri

IPC分类号： H01L29/08

CPC分类号： H01L51/0558 ,  H01L51/0012 ,  H01L51/0087 ,  H01L51/009 ,  H01L51/0533 ,  H01L51/0545 ,  H01L51/0575

摘要： A new class of organic-inorganic materials for thin film semiconducting devices that exhibit good stability in air and water, as well as a new purification technique for thin film semiconducting devices that contain impurities, such as ionic species.

摘要翻译： 用于薄膜半导体器件的新型有机 - 无机材料在空气和水中表现出良好的稳定性，以及用于含有杂质（例如离子物质）的薄膜半导体器件的新的纯化技术。

公开(公告)号：US20050029514A1

公开(公告)日：2005-02-10

申请号：US10880572

申请日：2004-07-01

申请人： Soichi Moriya

发明人： Soichi Moriya

IPC分类号： G02F1/167 ,  G02F1/1368 ,  H01L21/31 ,  H01L21/316 ,  H01L21/336 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05 ,  H01L51/30 ,  H01L51/40 ,  H01L29/04 ,  H01L31/0376 ,  H01L21/84

CPC分类号： H01L51/0533 ,  G02F1/1368 ,  H01L21/31608 ,  H01L51/0012 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/0516 ,  H01L51/0545

摘要： Aspects of the invention can provide a thin-film transistor having good transistor characteristics and operable with a low driving voltage, a method of producing such a thin-film transistor, a high-reliability electronic circuit, a display, and an electronic device. In an exemplary thin-film transistor according to the invention, a gate electrode can be formed on a substrate via an underlying layer, and a gate insulating layer can be formed on the substrate such that the gate electrode is covered with the gate insulating layer. A source electrode and a drain electrode are formed on the gate insulating layer such that they are separated from each other by a gap formed just above the gate electrode. An organic semiconductor layer can be formed thereon such that the electrodes are covered with the organic semiconductor layer. A region between the electrodes of the organic semiconductor layer functions as a channel region. A protective layer can be arranged on the organic semiconductor layer. This thin-film transistor is characterized in that the organic semiconductor layer is formed after the gate insulating layer is formed, and the gate insulating layer has the capability of causing the organic semiconductor layer to be aligned.

摘要翻译： 本发明的方面可以提供具有良好的晶体管特性并且可以以低驱动电压工作的薄膜晶体管，制造这种薄膜晶体管的方法，高可靠性电子电路，显示器和电子器件。 在根据本发明的示例性薄膜晶体管中，可以通过下层在基板上形成栅极电极，并且可以在基板上形成栅极绝缘层，使得栅极电极被栅极绝缘层覆盖。 源电极和漏电极形成在栅极绝缘层上，使得它们通过形成在栅电极正上方的间隙彼此分离。 可以在其上形成有机半导体层，使得电极被有机半导体层覆盖。 有机半导体层的电极之间的区域用作沟道区域。 可以在有机半导体层上设置保护层。 该薄膜晶体管的特征在于，在形成栅极绝缘层之后形成有机半导体层，并且栅极绝缘层具有使有机半导体层对准的能力。