公开(公告)号：US06888146B1

公开(公告)日：2005-05-03

申请号：US09289332

申请日：1999-04-09

Applicant: Ka-Ngo Leung ,  William A. Barletta ,  David O. Patterson ,  Richard A. Gough

Inventor： Ka-Ngo Leung ,  William A. Barletta ,  David O. Patterson ,  Richard A. Gough

IPC: H01J3/18

CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J2237/0435

Abstract: A maskless micro-ion-beam reduction lithography system is a system for projecting patterns onto a resist layer on a wafer with feature size down to below 100 nm. The MMRL system operates without a stencil mask. The patterns are generated by switching beamlets on and off from a two electrode blanking system or pattern generator. The pattern generator controllably extracts the beamlet pattern from an ion source and is followed by a beam reduction and acceleration column.

Abstract translation: 无掩模微离子束还原光刻系统是用于将图案投影到具有低于100nm的特征尺寸的晶片上的抗蚀剂层上的系统。 MMRL系统在没有模板掩模的情况下运行。 通过从两个电极消隐系统或图案发生器切换小束来产生图案。 图案发生器可控地从离子源提取子束图案，然后是光束减小和加速柱。

公开(公告)号：US20050001530A1

公开(公告)日：2005-01-06

申请号：US10891277

申请日：2004-07-14

Applicant: Huei-Pei Kuo ,  Henryk Birecki ,  Si-Ty Lam ,  Steven Naberhuis

Inventor： Huei-Pei Kuo ,  Henryk Birecki ,  Si-Ty Lam ,  Steven Naberhuis

IPC: H01J1/312 ,  G11B9/00 ,  G11B9/10 ,  H01J3/02 ,  H01J3/18 ,  H01J1/02 ,  H01L29/06

CPC classification number: B82Y10/00 ,  G11B9/10 ,  G11B9/1409 ,  H01J3/02 ,  H01J2201/308

Abstract: An electron source includes a planar emission region for generating an electron emission, and a focusing structure for focusing the electron emission into an electron beam.

Abstract translation: 电子源包括用于产生电子发射的平面发射区域和用于将电子发射聚焦成电子束的聚焦结构。

公开(公告)号：US6107728A

公开(公告)日：2000-08-22

申请号：US71465

申请日：1998-04-30

Applicant: Christopher J. Spindt ,  John E. Field ,  Theodore S. Fahlen

Inventor： Christopher J. Spindt ,  John E. Field ,  Theodore S. Fahlen

IPC: H01J9/42 ,  H01J1/304 ,  H01J3/02 ,  H01J3/18 ,  H01J29/04 ,  H01J31/12 ,  H01J1/30 ,  H01J1/02

CPC classification number: H01J3/022 ,  H01J2329/00

Abstract: An electrode (12 or 30) of an electron-emitting device has a plurality of openings (16 or 60) spaced laterally apart from one another. The openings can be used, as needed, in selectively separating one or more parts of the electrode from the remainder of the electrode during corrective test directed towards repairing any short-circuit defects that may exist between the electrode and other overlying or underlying electrodes. When the electrode with the openings is an emitter electrode (12), each opening (16) normally extends fully across an overlying control electrode (30). When the electrode with the openings is a control electrode (30), each opening (60) normally extends fully across an underlying emitter electrode (12). The short-circuit repair procedure typically entails directing light energy on appropriate portions of the electrode with the openings.

Abstract translation: 电子发射器件的电极（12或30）具有彼此横向间隔开的多个开口（16或60）。 根据需要，可以在校正试验期间选择性地将电极的一个或多个部分与电极的其余部分分离开来，以修复可能存在于电极和其它上覆或下面的电极之间的任何短路缺陷。 当具有开口的电极是发射电极（12）时，每个开口（16）通常完全穿过覆盖的控制电极（30）延伸。 当具有开口的电极是控制电极（30）时，每个开口（60）通常完全穿过下面的发射电极（12）延伸。 短路修复程序通常需要将光能引导到具有开口的电极的适当部分上。

公开(公告)号：US5965977A

公开(公告)日：1999-10-12

申请号：US828836

申请日：1997-03-24

Applicant: Hideo Makishima

Inventor： Hideo Makishima

IPC: H01J3/18 ,  H01J1/304 ,  H01J3/02 ,  H01J63/02 ,  H01J63/06 ,  H01J1/30

CPC classification number: H01J3/022 ,  H01J1/304 ,  H01J63/02 ,  H01J2201/30403 ,  H01J2201/30426

Abstract: There is provided a cold cathode including a substrate, a plurality of electron emitting electrodes formed on the substrate, a first insulating layer formed on the substrate and formed with a plurality of first cavities in which the electron emitting electrodes are disposed, a gate electrode formed on the first insulating layer and formed with a plurality of first openings which are in communication with the first cavities, a second insulating layer formed on the gate electrode and formed with a plurality of second cavities which are in communication with the first openings, and a focusing electrode formed on the second insulating layer and formed with a plurality of second openings which are in communication with the second cavities. At least one of central axes of the second openings and central axes of the first openings is eccentric with central axes of the electron emitting electrodes. Eccentricity between at least one of the central axes of the second openings and the central axes of the first openings, and the central axes of the electron emitting electrodes is oriented outwardly, and a degree of the eccentricity is set greater at a location more remote from a centrally located electron emitting electrode.

Abstract translation: 提供了一种冷阴极，其包括基板，形成在基板上的多个电子发射电极，形成在基板上并形成有多个第一空腔的第一绝缘层，其中设置有电子发射电极，形成栅电极 在所述第一绝缘层上形成有与所述第一空腔连通的多个第一开口，形成在所述栅电极上并形成有与所述第一开口连通的多个第二空腔的第二绝缘层，以及 聚焦电极形成在第二绝缘层上并且形成有与第二空腔连通的多个第二开口。 第二开口的中心轴线和第一开口的中心轴线的至少一个与电子发射电极的中心轴偏心。 第二开口的至少一个中心轴线与第一开口的中心轴线和电子发射电极的中心轴线之间的偏心度向外取向，偏心度在远离 中心位置的电子发射电极。

公开(公告)号：US5945677A

公开(公告)日：1999-08-31

申请号：US225996

申请日：1999-01-05

Applicant: Ka-Ngo Leung ,  Richard A. Gough ,  Qing Ji ,  Yung-Hee Yvette Lee

Inventor： Ka-Ngo Leung ,  Richard A. Gough ,  Qing Ji ,  Yung-Hee Yvette Lee

IPC: G01N23/225 ,  H01J37/08 ,  H01J37/30 ,  H01J37/317 ,  H01J3/18

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G01N23/225 ,  H01J37/08 ,  H01J37/3007 ,  H01J37/3177 ,  H01J2237/083 ,  H01J2237/31755 ,  H01J2237/31794

Abstract: A focused ion beam (FIB) system produces a final beam spot size down to 0.1 .mu.m or less and an ion beam output current on the order of microamps. The FIB system increases ion source brightness by properly configuring the first (plasma) and second (extraction) electrodes. The first electrode is configured to have a high aperture diameter to electrode thickness aspect ratio. Additional accelerator and focusing electrodes are used to produce the final beam. As few as five electrodes can be used, providing a very compact FIB system with a length down to only 20 mm. Multibeamlet arrangements with a single ion source can be produced to increase throughput. The FIB system can be used for nanolithography and doping applications for fabrication of semiconductor devices with minimum feature sizes of 0.1 .mu.m or less.

Abstract translation: 聚焦离子束（FIB）系统产生的最终束斑尺寸低至0.1μm或更小，离子束输出电流为微安数量级。 FIB系统通过适当地配置第一（等离子体）和第二（提取）电极来增加离子源亮度。 第一电极被配置为具有高孔径至电极厚度纵横比。 使用附加的加速器和聚焦电极来产生最终的光束。 可以使用少至五个电极，提供非常紧凑的FIB系统，其长度只有20mm。 可以生产具有单个离子源的多亚麻子布置以提高生产量。 FIB系统可用于制造半导体器件的纳米光刻和掺杂应用，最小特征尺寸为0.1μm或更小。

公开(公告)号：US5899350A

公开(公告)日：1999-05-04

申请号：US12574

申请日：1998-01-23

Applicant: Shigeo Itoh ,  Yoshio Makita ,  Kenichi Honda ,  Tatsuo Yamaura

Inventor： Shigeo Itoh ,  Yoshio Makita ,  Kenichi Honda ,  Tatsuo Yamaura

IPC: H01J29/87 ,  H01J1/52 ,  H01J3/18 ,  H01J5/03 ,  H01J7/18 ,  H01J29/02 ,  H01J29/06 ,  H01J29/62 ,  H01J29/82 ,  H01J29/94 ,  H01J31/12 ,  H01K1/36

CPC classification number: H01J29/82 ,  H01J29/028 ,  H01J31/127 ,  H01J2329/8625

Abstract: A hermetic container which can improve its stress resistance and its buckling strength and prevent deformation due to the atmospheric pressure. The space between the anode substrate and the cathode substrate in the hermetic container can be stably maintained. Anode conductors and fluorescent substance layers are formed on the inner surface of the anode substrate. Electron sources are formed on the inner surface of the cathode substrate so as to confront the corresponding display portions on the anode substrate. In order to complete a container, the anode substrate is spaced from the cathode substrate a predetermined distance apart and the fringe portions of the substrates are sealed. A supporting member is disposed in the container. The supporting member 15 consists of a plate in which plural through holes are formed at predetermined intervals and reinforcing supports which are respectively inserted into the through holes of the plate and of which the middle portions are bonded at the inlets of the through holes. Each reinforcing support has one end in contact with an inner surface of the anode substrate and the other end in contact with an inner surface of the cathode substrate. Each reinforcing support maintains the gap between the anode substrate and the cathode substrate at a fixed distance.

Abstract translation: 一种密封容器，可以提高其耐应力和翘曲强度，并防止由于大气压引起的变形。 可以稳定地保持密封容器中的阳极基板和阴极基板之间的空间。 在阳极基板的内表面上形成阳极导体和荧光物质层。 电子源形成在阴极基板的内表面上，以便与阳极基板上的对应的显示部分相对。 为了完成容器，阳极基板与阴极基板隔开预定距离，并且基板的边缘部分被密封。 支撑构件设置在容器中。 支撑构件15包括一个板，其中以预定间隔形成多个通孔，并且加强支撑件分别插入到板的通孔中，并且中间部分在通孔的入口处接合。 每个加强支撑件的一端与阳极基板的内表面接触，另一端与阴极基板的内表面接触。 每个加强支撑件以固定的距离保持阳极基板和阴极基板之间的间隙。

公开(公告)号：US5889359A

公开(公告)日：1999-03-30

申请号：US781961

申请日：1996-12-20

Applicant: Nobuya Seko

Inventor： Nobuya Seko

IPC: H01J3/18 ,  H01J1/304 ,  H01J3/02 ,  H01J1/02 ,  H01J1/30

CPC classification number: H01J3/022

Abstract: There is provided a field-emission type cold cathode including (a) a substrate at least a surface of which has electrical conductivity, (b) an insulating layer formed on the substrate, (c) an electrically conductive gate electrode formed on the insulating layer, (d) an almost conical, sharp-pointed emitter electrode disposed in a hole formed through the gate electrode and insulating layer, (e) a focusing electrode formed on the insulating layer so that the focusing electrode is located in the same plane as the gate electrode and surrounds the gate electrode, and (f) a feeder line formed in the same plane as the gate electrode. The feeder line extends from the gate electrode into the focusing electrode and being shaped complementarily with the focusing electrode so that the focusing electrode is present at every radial directions as viewed from a center of the emitter electrode. The present invention provides an electron source which has small divergence and has high axis-symmetry, and which can be fabricated by conventional field-emission type cold cathode fabrication methods having no focusing electrodes. Hence, the present invention makes it possible to provide a high-quality cathode at lower cost suitable for an electron source for an electronic tube and an electron beam emitter.

Abstract translation: 提供场致发射型冷阴极，其包括（a）至少其表面具有导电性的基板，（b）形成在基板上的绝缘层，（c）形成在绝缘层上的导电栅电极 ，（d）设置在通过栅电极和绝缘层形成的孔中的几乎圆锥形的尖锐的发射电极，（e）形成在绝缘层上的聚焦电极，使得聚焦电极位于与 并且围绕栅电极，（f）与栅电极形成在同一平面上的馈线。 馈电线从栅电极延伸到聚焦电极中并且与聚焦电极互补成形，使得从发射电极的中心观察，聚焦电极在每个径向存在。 本发明提供一种发散小，轴对称性高的电子源，可以通过没有聚焦电极的常规场致发射型冷阴极制造方法制造。 因此，本发明使得可以以适合于电子管和电子束发射体的电子源的较低成本来提供高质量的阴极。

公开(公告)号：US5814931A

公开(公告)日：1998-09-29

申请号：US734695

申请日：1996-10-21

Applicant: Hideo Makishima

Inventor： Hideo Makishima

IPC: H01J1/304 ,  D06M13/00 ,  G09G1/00 ,  G09G3/22 ,  H01J3/02 ,  H01J3/18 ,  H01J29/04 ,  H01J29/62 ,  H04N3/26 ,  H01J1/46

CPC classification number: H01J3/022

Abstract: The invention forms on a substrate an electron emission area composed of at least a single micro cold cathode which is composed of an emitter and a gate electrode, arranges plural focusing electrodes surrounding this electron emission area in the periphery of the electron emission area, and connects with each other the focusing electrodes facing each other around the electron emission area. An electron beam having a vertically long spot near the cathode is formed by making more intense the horizontal focusing when the electron beam is scanning the peripheral part of the screen on the basis of a horizontal and a vertical synchronizing signal. Thus the invention can correct distortion of the electron beam caused by deflection and can achieve and excellent resolution all over the display screen, and furthermore, can compose a cathode ray tube using this cold cathode as an electron source.

Abstract translation: 本发明在基板上形成由至少由发射极和栅电极构成的单个微冷阴极构成的电子发射区域，在电子发射区域的周围配置围绕该电子发射区域的多个聚焦电极，并连接 彼此相对地围绕电子发射区域彼此面对着聚焦电极。 当电子束基于水平和垂直同步信号扫描屏幕的周边部分时，通过使水平聚焦更强烈地形成具有靠近阴极的垂直长点的电子束。 因此，本发明可以校正由偏转引起的电子束的变形，并且可以在整个显示屏上实现和优异的分辨率，此外，可以构成使用该冷阴极作为电子源的阴极射线管。

公开(公告)号：US5786657A

公开(公告)日：1998-07-28

申请号：US840763

申请日：1997-04-16

Applicant: Akihiko Okamoto

Inventor： Akihiko Okamoto

IPC: H01J3/18 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02

CPC classification number: H01J3/022

Abstract: In a field emission electron gun including emitters (104) on predetermined parts of a substrate (409), an insulator film (105) on a remaining part of the substrate, a first gate electrode (101) on the insulator film so as to surround the emitters with a space left between each emitter and the first gate electrode, the emitters are formed on the substrate except a center part of the substrate. The first gate electrode has an inner peripheral surface which defines a hole (107) exposing a center portion of the insulator film that is positioned on the center part of the substrate. A second gate electrode (102) is formed on the insulator film to surround an outer peripheral surface of the first gate electrode with a distance left between the outer peripheral surface of the first gate electrode and the second gate electrode. A third gate electrode (106) may be formed on the center portion of the insulator film with another distance left between the inner peripheral surface of the first gate electrode and the third gate electrode.

Abstract translation: 在包括在基板（409）的预定部分上的发射体（104）的场致发射电子枪中，在所述基板的剩余部分上的绝缘膜（105），所述绝缘膜上的第一栅电极（101） 在每个发射极和第一栅电极之间留有空间的发射极，除了衬底的中心部分之外，发射体形成在衬底上。 第一栅电极具有内周面，其限定了露出位于基板的中心部分的绝缘膜的中心部分的孔（107）。 第二栅电极（102）形成在绝缘膜上，以围绕第一栅电极的外周表面，其间距离留在第一栅电极的外周表面和第二栅电极之间。 第三栅电极（106）可以形成在绝缘膜的中心部分上，在第一栅电极的内周表面和第三栅电极之间留有另一距离。

公开(公告)号：US5759872A

公开(公告)日：1998-06-02

申请号：US634536

申请日：1996-04-18

Applicant: Raymond Van Roijen ,  Petrus J.A. Thijs ,  Patrick H. Van Gestel

Inventor： Raymond Van Roijen ,  Petrus J.A. Thijs ,  Patrick H. Van Gestel

IPC: H01J3/18 ,  H01S5/16 ,  H01S5/20 ,  H01S5/227 ,  H01S5/50 ,  H01S3/19 ,  H01L23/00

CPC classification number: H01S5/164 ,  H01S2304/04 ,  H01S5/2081 ,  H01S5/2275 ,  H01S5/50

Abstract: A passive region is provided adjacent the mirror surface of a laser. A mesa is formed with an end face parallel to the mirror surface to be formed. The passive region is grown against the end face, and the mirror surface is formed therein by cleaving. The passive region is provided exclusively at the area of the active region. The passive region is provided at the area of the active region preferably in the following manner: two depressions are formed in the layer structure of the laser at the area of the mirror surface to be formed, reaching down to the active layer. Then a portion of the active layer situated between the depressions is selectively removed, whereupon the passive region is grown starting from the depressions in the tubular cavity thus formed.

Abstract translation: 在激光器的镜面附近设置被动区域。 台面形成有与待形成的镜面平行的端面。 被动区域相对于端面生长，并且通过切割在其中形成镜面。 无源区域仅在有源区域的区域提供。 无源区设置在有源区的区域，优选以下列方式：在要形成的镜面的区域处的激光层的层结构中形成两个凹陷，到达有源层。 然后选择性地去除位于凹陷之间的有源层的一部分，从而从被形成的管状空腔的凹陷开始生长被动区域。