公开(公告)号：US07989836B2

公开(公告)日：2011-08-02

申请号：US12656558

申请日：2010-02-03

Applicant: Toshiya Uemura

Inventor： Toshiya Uemura

IPC: H01L29/22 ,  H01L29/227 ,  H01L33/00 ,  H01L29/24 ,  H01L31/0203 ,  H01L21/00 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC classification number: H01L33/22 ,  H01L33/20 ,  H01L33/52 ,  H01L2224/48091 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/0102 ,  H01L2924/01025 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/00014

Abstract: A light emitting device includes a light emitting element, including a substrate including group III nitride compound semiconductor, a luminous layer structure including group III nitride compound semiconductor, the luminous layer structure formed on a first surface of the substrate, and an irregular surface formed on a second surface of the substrate, the second surface including a principal light emission surface, and a translucent sealing member for sealing the light emitting element, the translucent sealing member being separated from the second surface. At least one of translucent gel material and an inert gas is filled between the light emitting element and the translucent sealing member.

Abstract translation: 发光器件包括发光元件，该发光元件包括含有III族氮化物化合物半导体的衬底，包含III族氮化物化合物半导体的发光层结构，形成在衬底的第一表面上的发光层结构和形成在 所述基板的第二表面，所述第二表面包括主发光表面，以及用于密封所述发光元件的半透明密封构件，所述半透明密封构件与所述第二表面分离。 半透明凝胶材料和惰性气体中的至少一种填充在发光元件和半透明密封构件之间。

公开(公告)号：US07982237B2

公开(公告)日：2011-07-19

申请号：US12470787

申请日：2009-05-22

Applicant: Geun Ho Kim ,  Yu Ho Won

Inventor： Geun Ho Kim ,  Yu Ho Won

IPC: H01L29/22 ,  H01L33/00 ,  H01L29/227 ,  H01L31/0203

CPC classification number: H01L33/105 ,  H01L27/15 ,  H01L29/866 ,  H01L33/486 ,  H01L33/50 ,  H01L33/507 ,  H01L33/60 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is a light emitting device package. The light emitting device package includes a semiconductor substrate including a first surface at a first depth from an upper surface of the semiconductor substrate and a second surface at a second depth from the first surface; and a light emitting part on the second surface of the semiconductor substrate.

Abstract translation: 公开了一种发光器件封装。 发光器件封装包括半导体衬底，该半导体衬底包括从半导体衬底的上表面开始的第一深度处的第一表面和距第一表面第二深度的第二表面; 以及在半导体衬底的第二表面上的发光部分。

公开(公告)号：US07960748B2

公开(公告)日：2011-06-14

申请号：US12394948

申请日：2009-02-27

Applicant: Hironobu Sakamoto

Inventor： Hironobu Sakamoto

IPC: H01L29/22 ,  H01L29/227 ,  H01L33/00 ,  H01L29/24 ,  H01L31/0203

CPC classification number: H01L33/60 ,  H01L33/486 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor light emitting device is provided so that an optical axis thereof is properly set parallel with the mounting board when the device is mounted on the mounting board. The semiconductor light emitting device can have a structure in that light can be incident on the light guide plate with high efficiency and uniform introduction into the light guide plate. A multi-piece substrate can include electrodes, a plurality of semiconductor light emitting elements, and a sealing resin for sealing them simultaneously. The thus obtained integrated substrate is cut into individual semiconductor light emitting device bodies. On one of the cut end faces, which serves as a surface to be mounted onto a mounting board, a light-shielding reflective film can be coated over an area from the edge of the light emission surface of the sealing resin to at least part of the substrate. On the other cut end face, the sealing resin can be covered with a light-shielding reflective film.

Abstract translation: 设置半导体发光器件，使得当该器件安装在安装板上时，其光轴适当地与安装板平行设置。 半导体发光器件可以具有这样的结构，即光可以以高效率入射到导光板上并均匀地引入导光板。 多片基板可以包括电极，多个半导体发光元件和用于同时密封它们的密封树脂。 将如此获得的集成基板切割成单独的半导体发光器件主体。 在作为要安装到安装板上的表面的切割端面之一上，可以将遮光反射膜涂覆在从密封树脂的发光表面的边缘到至少部分 底物。 在另一个切割端面上，密封树脂可以被遮光反射膜覆盖。

公开(公告)号：US07898062B2

公开(公告)日：2011-03-01

申请号：US12757617

申请日：2010-04-09

Applicant: Paul A. Farrar

Inventor： Paul A. Farrar

IPC: H01L29/207 ,  H01L29/227 ,  H01L29/167 ,  H01L21/762 ,  H01L21/04 ,  H01L21/265

CPC classification number: H01L21/02573 ,  G02B6/43 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02543 ,  H01L21/02546 ,  Y10S438/919

Abstract: A method for epitaxially forming a first semiconductor structure attached to a second semiconductor structure is provided. Devices and methods described include advantages such as reduced lattice mismatch at an epitaxial interface between two different semiconductor materials. One advantageous application of such an interface includes an electrical-optical communication structure. Methods such as deposition of layers at an elevated temperature provide easy formation of semiconductor structures with a modified lattice constant that permits an improved epitaxial interface.

Abstract translation: 提供一种用于外延形成附接到第二半导体结构的第一半导体结构的方法。 所描述的器件和方法包括诸如两个不同半导体材料之间的外延界面处的晶格失配减小的优点。 这种接口的一个有利应用包括电光通信结构。 诸如在升高的温度下沉积层的方法可以容易地形成具有改进的晶格常数的半导体结构，这允许改进的外延界面。

公开(公告)号：US07872272B2

公开(公告)日：2011-01-18

申请号：US12337475

申请日：2008-12-17

Applicant: David P Bour ,  Christopher L Chua

Inventor： David P Bour ,  Christopher L Chua

IPC: H01L33/00 ,  H01L29/22 ,  H01L29/227

CPC classification number: H01L33/405 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32

Abstract: A structure and method for improving UV LED efficiency is described. The structure utilizes a tunnel junction to separate a P-doped layer of the LED from a n-doped contact layer. The n-doped contact layer allows the use of a highly reflective, low work function metal, such as aluminum, for the p-side contact. The reflectivity at the contact can be further improved by including a phase matching layer in some areas between the contact metal (The metal above the phase matching layer does not necessarily need to have a low work function because it does need to form an ohmic contact with the n-contact layer) and the n-doped contact layer.

Abstract translation: 描述了一种用于提高UV LED效率的结构和方法。 该结构利用隧道结将LED的P掺杂层与n-掺杂的接触层分离。 n掺杂的接触层允许使用高反射性，低功函数金属（例如铝）用于p侧接触。 通过在接触金属之间的某些区域中包括相位匹配层可以进一步改善接触处的反射率（相位匹配层上方的金属不一定需要具有低功函数，因为它确实需要与...形成欧姆接触 n接触层）和n掺杂的接触层。

公开(公告)号：US20100320456A1

公开(公告)日：2010-12-23

申请号：US12488218

申请日：2009-06-19

Applicant: Alan E. DELAHOY ,  Gaurav SARAF ,  Sheyu GUO

Inventor： Alan E. DELAHOY ,  Gaurav SARAF ,  Sheyu GUO

IPC: H01L29/227 ,  H01L21/36 ,  C23C14/34 ,  C23C14/50 ,  H01L21/40

CPC classification number: H01L21/02565 ,  C23C14/0057 ,  C23C14/086 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/0262 ,  H01L21/02631

Abstract: The present invention is directed to methods for depositing doped and/or alloyed semiconductor layers, an apparatus suitable for the depositing, and products prepared therefrom.

Abstract translation: 本发明涉及用于沉积掺杂和/或合金化半导体层的方法，适用于沉积的装置以及由其制备的产品。

公开(公告)号：US07705429B2

公开(公告)日：2010-04-27

申请号：US12364073

申请日：2009-02-02

Applicant: Paul A. Farrar

Inventor： Paul A. Farrar

IPC: H01L29/207 ,  H01L29/227 ,  H01L29/167 ,  H01L21/762 ,  H01L21/04 ,  H01L21/265

CPC classification number: H01L21/02573 ,  G02B6/43 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02543 ,  H01L21/02546 ,  Y10S438/919

Abstract: A method for epitaxially forming a first semiconductor structure attached to a second semiconductor structure is provided. Devices and methods described include advantages such as reduced lattice mismatch at an epitaxial interface between two different semiconductor materials. One advantageous application of such an interface includes an electrical-optical communication structure. Methods such as deposition of layers at an elevated temperature provide easy formation of semiconductor structures with a modified lattice constant that permits an improved epitaxial interface.

Abstract translation: 提供了一种用于外延形成附接到第二半导体结构的第一半导体结构的方法。 所描述的器件和方法包括诸如两个不同半导体材料之间的外延界面处的晶格失配减小的优点。 这种接口的一个有利应用包括电光通信结构。 诸如在升高的温度下沉积层的方法可以容易地形成具有改进的晶格常数的半导体结构，这允许改进的外延界面。

公开(公告)号：US07659544B2

公开(公告)日：2010-02-09

申请号：US11317937

申请日：2005-12-23

Applicant: Ming Lu ,  Lap-Wei Leung ,  Geoffrey Wen Tai Shuy

Inventor： Ming Lu ,  Lap-Wei Leung ,  Geoffrey Wen Tai Shuy

IPC: H01L29/18 ,  H01L33/00 ,  H01L29/20 ,  H01L29/22 ,  H01L29/227

CPC classification number: H05B33/0857 ,  H05B33/0818 ,  H05B33/0824

Abstract: A light emitting device includes a first light emitting diode (LED) emitting a first light emission of at least a first wavelength, and a second light emitting diode emitting a second light emission of at least a second wavelength. The second LED is placed in close proximity to the first LED such that after a mixing length from the first and second LEDs, a combination of the first and second lights is perceived as one color in the human vision. In use, the first and second LEDs are alternately driven by a power source in the time domain.

Abstract translation: 发光器件包括发射至少第一波长的第一发光的第一发光二极管（LED）和发射至少第二波长的第二发光的第二发光二极管。 第二LED被放置在第一LED附近，使得在来自第一和第二LED的混合长度之后，第一和第二光的组合被感知为人类视觉中的一种颜色。 在使用中，第一和第二LED由时域中的电源交替地驱动。

公开(公告)号：US07592635B2

公开(公告)日：2009-09-22

申请号：US10517936

申请日：2002-12-24

Applicant: Jin-Koo Chung ,  Beom-Rak Choi ,  Joon-Hoo Choi ,  Sang-Gab Kim ,  Hee-Hwan Choe

Inventor： Jin-Koo Chung ,  Beom-Rak Choi ,  Joon-Hoo Choi ,  Sang-Gab Kim ,  Hee-Hwan Choe

IPC: H01L29/227 ,  H01L29/04

CPC classification number: H01L27/3246 ,  H01L21/31633 ,  H01L27/3283 ,  H01L51/5206

Abstract: Disclosed is an organic electroluminescent (EL) device for enhancing the luminous efficiency. A first electrode is formed on a substrate. A CVD insulating film of low dielectric constant having an opening exposing the first electrode is formed on the first electrode and the substrate. An organic EL layer and a second electrode are sequentially stacked on the opening. A wall surrounding a region of the organic EL layer is formed of the CVD insulating film of low dielectric constant, the surface treatment of the pixel electrode can be performed using O2 plasma enhance luminance properties.

Abstract translation: 公开了一种用于提高发光效率的有机电致发光（EL）装置。 在基板上形成第一电极。 在第一电极和基板上形成具有露出第一电极的开口的低介电常数的CVD绝缘膜。 有机EL层和第二电极依次堆叠在开口上。 围绕有机EL层的区域的壁由低介电常数的CVD绝缘膜形成，可以使用O 2等离子体增强亮度特性来执行像素电极的表面处理。

公开(公告)号：US07589359B1

公开(公告)日：2009-09-15

申请号：US12179858

申请日：2008-07-25

Applicant: Hsin-Yen Hwang

Inventor： Hsin-Yen Hwang

IPC: H01L29/32 ,  H01L29/74 ,  H01L31/111 ,  H01L29/423 ,  H01L29/43 ,  H01L29/47 ,  H01L29/49 ,  H01L29/167 ,  H01L29/207 ,  H01L29/227 ,  H01L31/0288

CPC classification number: H01L29/87 ,  H01L29/747

Abstract: A silicon controlled rectifier structure with the symmetrical layout is provided. The N-type doped regions and the P-type doped regions are disposed with the N-well and symmetrically arranged relative to the isolation structure in-between, while the P-type buried layer is located under the N-type doped regions and the P-type doped regions and fully isolates the N-type doped regions from the N-well.

Abstract translation: 提供了具有对称布局的可控硅整流器结构。 N型掺杂区域和P型掺杂区域相对于其间的隔离结构以N阱布置并且对称布置，而P型掩埋层位于N型掺杂区域下方，并且 P型掺杂区域，并将N-型掺杂区域与N阱完全隔离。