公开(公告)号：US5872690A

公开(公告)日：1999-02-16

申请号：US893676

申请日：1997-07-11

申请人： Shigeru Tadokoro ,  Takao Imagawa ,  Katsuro Watanabe ,  Akira Kumagai

发明人： Shigeru Tadokoro ,  Takao Imagawa ,  Katsuro Watanabe ,  Akira Kumagai

IPC分类号： G01R33/09 ,  C22C27/06 ,  G11B5/31 ,  G11B5/39 ,  H01F10/08 ,  H01F10/32 ,  H01L43/08

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  H01F10/3218 ,  G11B2005/3996 ,  G11B5/3932

摘要： A magnetic laminated film used for a magnetic transducer is constructed in such a way that a ferromagnetic film as a ferromagnetic body is made of, for example, a Ni--Fe alloy film, formed on a substrate made of, for example, glass, and an antiferromagnetic film as an antiferromagnetic body having crystal structure of body-centered cubic lattice, for example, made of a Cr alloy film is laminated on the top layer. Further, a magnetic transducer using the magnetic laminated film is applied to a magnetic head in a magnetic recording device in accordance with the present invention.

摘要翻译： 用于磁换能器的磁性层压膜以这样的方式构成，使得作为铁磁体的铁磁膜由例如由例如玻璃制成的基板上形成的例如Ni-Fe合金膜制成，以及 具有例如由Cr合金膜制成的体心立方晶格的晶体结构的反铁磁体层叠在顶层上。 此外，根据本发明，使用磁性层压膜的磁性换能器被施加到磁记录装置中的磁头上。

公开(公告)号：US5792569A

公开(公告)日：1998-08-11

申请号：US618184

申请日：1996-03-19

申请人： Jonathan Zanhong Sun ,  Arunava Gupta ,  Gang Xiao ,  Philip Louis Trouilloud ,  Philippe P. Lecoeur

发明人： Jonathan Zanhong Sun ,  Arunava Gupta ,  Gang Xiao ,  Philip Louis Trouilloud ,  Philippe P. Lecoeur

IPC分类号： G01R33/09 ,  G11B5/33 ,  G11B5/39 ,  G11C11/15 ,  G11C11/16 ,  G11C11/56 ,  H01F10/00 ,  H01F10/08 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  G11B5/147

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11C11/15 ,  G11C11/16 ,  G11C11/5607 ,  H01F10/3213 ,  H01L43/10 ,  G11B2005/3996 ,  G11B5/332 ,  Y10S428/90 ,  Y10T428/1171

摘要： A tri-layer thin film magnetoresistive device using doped perovskite manganate thin films as ferromagnetic elements, wherein a current is transported through the tri-layer structure, is disclosed. A large magnetoresistance change of about a factor of two is obtained in a low magnetic field, less than 150 Oe, which is close to the coercivity of the material of the elements. This device demonstrates that low-field spin-dependent transport in the manganates can be accomplished and that the magnitude of the resulting magnetoresistance is suitable for magnetoresistive field sensor applications.

摘要翻译： 公开了一种使用掺杂的钙钛矿锰酸盐薄膜作为铁磁元件的三层薄膜磁阻器件，其中电流通过三层结构传输。 在小于150Oe的低磁场中获得大约二分之一的大的磁阻变化，其接近元件的材料的矫顽力。 该器件证明可以实现锰酸盐中的低场自旋相关传输，并且所得磁阻的大小适用于磁阻场传感器应用。

公开(公告)号：US5766743A

公开(公告)日：1998-06-16

申请号：US656921

申请日：1996-06-03

申请人： Jun-Ichi Fujikata ,  Kazuhiko Hayashi ,  Hidefumi Yamamoto ,  Kunihiko Ishihara ,  Masafumi Nakada

发明人： Jun-Ichi Fujikata ,  Kazuhiko Hayashi ,  Hidefumi Yamamoto ,  Kunihiko Ishihara ,  Masafumi Nakada

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/08 ,  H01F10/32 ,  H01F41/30 ,  G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  H01F10/3268 ,  H01F41/304 ,  Y10S428/90 ,  Y10T428/1121 ,  Y10T428/24942 ,  Y10T428/265 ,  Y10T428/31678

摘要： Magnetic thin films 2 and 3 are stacked on a substrate 4 with a nonmagnetic thin film 1 interposed therebetween. An antiferromagnetic thin film 5 is arranged adjacent to one magnetic thin film 3. The inequality Hc.sub.2

公开(公告)号：US5763108A

公开(公告)日：1998-06-09

申请号：US810061

申请日：1997-03-05

申请人： Jei-Wei Chang ,  Wen-Cherng Lau ,  Kazumasa Yasuda

发明人： Jei-Wei Chang ,  Wen-Cherng Lau ,  Kazumasa Yasuda

IPC分类号： G11B5/31 ,  G11B5/39 ,  H01F10/08 ,  H01F10/14 ,  H01F10/32 ,  G11B5/66

CPC分类号： G11B5/3967 ,  G11B5/3109 ,  G11B5/3163 ,  H01F10/14 ,  Y10S428/90 ,  Y10T428/115

摘要： A magnetic material which may be employed as a thin film magnetic layer within magnetic heads, and a method for forming the magnetic material as a thin film magnetic layer for use within magnetic heads. The magnetic material has an elemental composition comprising about 40 to about 60 weight percent iron, about 40 to about 60 weight percent nickel and about 0.002 to about 1 weight percent tin. The magnetic material may be formed as a thin film magnetic layer for use within a magnetic head through an electrochemical plating method employing an aqueous plating solution comprising iron (II) ions, nickel (II) ions and tin (II) ions. When electrodeposited and anisotropically magnetically aligned, or when thermally annealed and anisotropically magnetically aligned the thin film magnetic layer possess a higher saturation magnetization, a higher anisotropy, a comparable easy axis coercivity, a lower hard axis permittivity and a higher resistivity than conventional thin film magnetic layers formed of permalloy (nickel-iron 80:20 w/w) alloys.

摘要翻译： 可用作磁头内的薄膜磁性层的磁性材料，以及用于形成用作磁头内的薄膜磁性层的磁性材料的方法。 磁性材料具有包含约40至约60重量％的铁，约40至约60重量％的镍和约0.002至约1重量％的锡的元素组成。 磁性材料可以通过使用包含铁（II）离子，镍（II）离子和锡（II））离子的水性电镀溶液的电化学电镀方法形成为在磁头内使用的薄膜磁性层。 当电沉积和各向异性磁性取向时，或者当热退火和各向异性磁性取向时，薄膜磁性层具有较高的饱和磁化强度，较高的各向异性，相当的易轴矫顽力，较低的硬轴介电常数和比常规薄膜磁性更高的电阻率 由坡莫合金（镍 - 铁80:20w / w）合金形成的层。

公开(公告)号：US5691936A

公开(公告)日：1997-11-25

申请号：US702382

申请日：1996-08-14

申请人： Hiroshi Sakakima ,  Takeshi Uenoyama ,  Yasuhiro Kawawake ,  Yousuke Irie

发明人： Hiroshi Sakakima ,  Takeshi Uenoyama ,  Yasuhiro Kawawake ,  Yousuke Irie

IPC分类号： G01R33/09 ,  G11B5/39 ,  G11C11/14 ,  G11C11/42 ,  H01F10/08 ,  H01F10/30 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  G11C11/15

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11C11/14 ,  G11B2005/3996

摘要： A magnetoresistive effect element having a large magnetoresistive change with a small magnetic field, and a memory element using the same. A semiconductor film to provide a window for excitation light is arranged on a substrate via a buffer layer. Another semiconductor film and a nonmagnetic metallic film (or a nonmagnetic insulating film) are arranged on the semiconductor film successively. A magnetic film having a square magnetization curve is arranged on the nonmagnetic metallic film (or a nonmagnetic insulating film). An electrode is arranged beneath the substrate and another electrode is arranged on the magnetic film. By radiating a laser light beam to the semiconductor film acting as a window, electrons having spin polarization are excited in the semiconductor film so as to utilize the dependency of the scattering of electrons at the surface of the magnetic film on the magnetization orientation of the magnetic film and the spin polarization state of the excited electrons.

摘要翻译： 具有磁阻小的磁阻变化的磁阻效应元件以及使用其的存储元件。 用于提供激发光的窗口的半导体膜经由缓冲层布置在衬底上。 在半导体膜上依次配置另一半导体膜和非磁性金属膜（或非磁性绝缘膜）。 具有方形磁化曲线的磁性膜被布置在非磁性金属膜（或非磁性绝缘膜）上。 电极布置在基底下方，另一电极布置在磁膜上。 通过对作为窗口的半导体膜照射激光束，在半导体膜中激发具有自旋极化的电子，以利用磁性膜表面的电子散射对磁性的磁化取向的依赖性 电子和激发电子的自旋极化状态。

公开(公告)号：US5677625A

公开(公告)日：1997-10-14

申请号：US589844

申请日：1996-01-22

申请人： Bernard Dieny

发明人： Bernard Dieny

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/08 ,  H01F10/32 ,  H01L43/08

CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/39 ,  H01F10/3268 ,  H01L43/08 ,  Y10T428/1121

摘要： A magnetoresistance having three ferromagnetic layers (10, 20, 30) separated by non-magnetic layers (15, 25). The first ferromagnetic layer (10) has a magnetization orientable by a measuring current, the second layer (20) has a "free" magnetization and the third ferromagnetic layer (50) has a trapped or fixed magnetization.

摘要翻译： 具有由非磁性层（15,25）分开的三个铁磁层（10,20,30）的磁阻。 第一铁磁层（10）具有可由测量电流定向的磁化，第二层（20）具有“自由”磁化，第三铁磁层（50）具有被捕获或固定的磁化。

公开(公告)号：US5591533A

公开(公告)日：1997-01-07

申请号：US458862

申请日：1995-06-01

申请人： Mustafa Pinarbasi

发明人： Mustafa Pinarbasi

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/08 ,  H01F41/14 ,  H01L43/08 ,  H01L43/12 ,  B32B15/04 ,  G11B21/00

CPC分类号： G11B5/3932 ,  G11B5/399 ,  Y10S428/90 ,  Y10S428/928 ,  Y10T428/1157 ,  Y10T428/12465 ,  Y10T428/12604 ,  Y10T428/12611 ,  Y10T428/12847 ,  Y10T428/12854

摘要： In a magnetoresistive read transducer, a material which is inert with respect to the soft film magnetic biasing layer is formed at the surface of the substrate prior to soft film deposition. In a preferred embodiment of the present invention, a substrate surface layer of metal such as Cr or Ta is used. These metals have high resistivity due to partial oxidation when deposited on the substrate to reduce shunting of sensing current through the magnetoresistive layer, and further acts as a barrier to protect the soft film from substrate interface contamination. The surface layer also acts as a seed layer to set the soft film magnetization orientation in a well-defined direction therefore reducing magnetic instability.

摘要翻译： 在磁阻读取传感器中，在软膜沉积之前，在基板的表面上形成相对于软膜磁偏置层为惰性的材料。 在本发明的优选实施例中，使用诸如Cr或Ta的金属的衬底表面层。 这些金属在沉积在衬底上时由于部分氧化而具有高电阻率，以减少通过磁阻层的感测电流的分流，并且还用作屏障以保护软膜免受衬底界面污染。 表面层还用作种子层以将软膜磁化取向设置在明确的方向上，从而降低磁性不稳定性。

公开(公告)号：US5589278A

公开(公告)日：1996-12-31

申请号：US498389

申请日：1995-07-05

申请人： Atsushi Kamijo

发明人： Atsushi Kamijo

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/08 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  G11B5/66

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  H01F10/3281 ,  H01L43/10 ,  G11B2005/3996 ,  Y10S428/90 ,  Y10S428/928 ,  Y10T428/1129 ,  Y10T428/12632 ,  Y10T428/12819 ,  Y10T428/12826 ,  Y10T428/1284 ,  Y10T428/12847 ,  Y10T428/12951 ,  Y10T428/2457

摘要： Disclosed is a magnetoresistive thin-film, which a (110) oriented epitaxial buffer layer 2 made of a body-centered cubic crystalline metal or alloy is formed on a single crystalline substrate 1, thereon with layer a (110) oriented epitaxial Fe/Cr superlattice film on which Fe layers 3 and Cr layers 4 alternately are epitaxially grown, the Fe/Cr superlattice having a structure in which staircase facets which have ridge lines to the direction at (110) surface and have {100} side surfaces stand side by side to the direction. The dispersion of the widths of the staircase facets falls within .+-.50%. Also disclosed is a magnetoresistive device which is provided with the above magnetoresistive thin-film and a means for applying a magnetic field parallel to the ridge lines of the staircase facets to the thin-film.

摘要翻译： 公开了一种磁阻薄膜，其中由单体晶体金属或合金制成的（110）取向的外延缓冲层2在其上形成有单层（110）取向的外延Fe / Cr 交替地外延生长Fe层3和Cr层4的超晶格膜，具有这样的结构的Fe / Cr超晶格，其中阶梯面在（110）表面具有<100>方向的棱线并具有{100}侧面 并排朝<110>方向。 楼梯面的宽度分散在±50％以内。 还公开了一种具有上述磁阻薄膜的磁阻器件和用于将平行于阶梯面的脊线的磁场施加到薄膜的装置。

公开(公告)号：US5525583A

公开(公告)日：1996-06-11

申请号：US192724

申请日：1994-02-07

申请人： Dawood Aized ,  Robert E. Schwall

发明人： Dawood Aized ,  Robert E. Schwall

IPC分类号： H01B12/00 ,  H01F6/02 ,  H01F6/06 ,  H01F10/08 ,  H01F41/06 ,  H01L39/00

CPC分类号： H01F6/02 ,  H01F41/079 ,  H01F6/06 ,  Y10S336/01 ,  Y10S505/705 ,  Y10S505/879 ,  Y10S505/88 ,  Y10T29/49014 ,  Y10T29/49071 ,  Y10T29/49078

摘要： A superconducting magnetic coil includes a plurality of sections positioned axially along the longitudinal axis of the coil, each section being formed of an anisotropic high temperature superconductor material wound about a longitudinal axis of the coil and having an associated critical current value that is dependent on the orientation of the magnetic field of the coil. The cross section of the superconductor, or the type of superconductor material, at sections along the axial and radial axes of the coil are changed to provide an increased critical current at those regions where the magnetic field is oriented more perpendicularly to the conductor plane, to thereby increase the critical current at these regions and to maintain an overall higher critical current of the coil.

公开(公告)号：US5485334A

公开(公告)日：1996-01-16

申请号：US392393

申请日：1996-02-22

申请人： James L. Nix ,  Guy F. Ruse ,  Paul D. Reinholz ,  Anthony C. Helms ,  Daniel J. O'Connor

发明人： James L. Nix ,  Guy F. Ruse ,  Paul D. Reinholz ,  Anthony C. Helms ,  Daniel J. O'Connor

IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01F10/08 ,  H01F10/32 ,  H01F41/14 ,  H01L43/08 ,  H01L43/12

CPC分类号： G11B5/398 ,  G11B5/399 ,  H01L43/08 ,  H01L43/12 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3932 ,  Y10T29/49044 ,  Y10T29/49046

摘要： An improved magnetoresistive device and method for fabricating the same which results in improved Barkhausen noise suppression. A generally coplanar device is described having an MR structure conductive region longitudinally biased by opposing permanent magnet layers separated therefrom by a non-magnetic metal or dielectric separation layer. significant reduction of the demagnetization energy near the MR-to-permanent magnet junction is achieved, particularly in the use of an elliptically shaped conductive region and the resultant generally coplanar device is readily fabricated and reproducible using a self-aligning process. The longitudinal bias technique described can be used in conjunction with all known transverse bias techniques.

摘要翻译： 一种改进的磁阻器件及其制造方法，其导致改进的巴克豪森噪声抑制。 描述了一种大致共面的器件，其具有通过非磁性金属或介电分离层与其分开的相对的永久磁体层纵向偏置的MR结构导电区域。 实现了MR永磁体结附近的退磁能的显着降低，特别是在使用椭圆形导电区域时，使用自对准工艺容易地制造和重现所得到的大体上共面的器件。 所描述的纵向偏置技术可以与所有已知的横向偏压技术结合使用。