公开(公告)号：US20160203950A1

公开(公告)日：2016-07-14

申请号：US14595813

申请日：2015-01-13

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Anwar HUSAIN ,  Tzuyuan YIIN ,  Tienyu SHENG

IPC: H01J37/317 ,  C23C14/48 ,  H01J37/244 ,  G01K7/22 ,  H01J37/20

CPC classification number: H01J37/3171 ,  C23C14/48 ,  G01K7/22 ,  H01J37/185 ,  H01J37/20 ,  H01J37/244 ,  H01J2237/2001 ,  H01J2237/202 ,  H01J2237/20292 ,  H01J2237/31701 ,  H01J2237/31705

Abstract: A method for a recipe of a low temperature implantation comprises: pre-cooling a workpiece transferred from a FOUP to a lower temperature to meet the recipe, implanting the workpiece according to the recipe, and post-heating the workpiece to a higher temperature before returning the workpiece to the FOUP. Further, an ion implanter comprising a process chamber, a FOUP, a cooling module and a heating module is provided. The workpiece can be implanted according to the recipe in the process chamber. The FOUP can transfer the workpiece toward and away from the process chamber. The cooling module is disposed outside the process chamber and can pre-cool the workpiece to the lower temperature to meet the recipe before implanting the workpiece. The heating module is disposed outside the process chamber and can post-heat the workpiece to the higher temperature before returning the workpiece to the FOUP.

Abstract translation: 一种用于低温植入配方的方法包括：将从FOUP传送的工件预冷到较低温度以满足配方，根据配方植入工件，并在返回之前将工件后加热到更高的温度 工件到FOUP。 此外，提供了包括处理室，FOUP，冷却模块和加热模块的离子注入机。 可以根据处理室中的配方植入工件。 FOUP可以将工件朝向和远离处理室传送。 冷却模块设置在处理室外部，并且可以在植入工件之前将工件预冷却到较低温度以满足配方。 加热模块设置在处理室外部，并可在将工件返回到FOUP之前将工件后加热到更高的温度。

公开(公告)号：US20160111245A1

公开(公告)日：2016-04-21

申请号：US14519080

申请日：2014-10-20

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Kourosh SAADATMAND ,  Nicholas WHITE

IPC: H01J37/147 ,  H01J37/317 ,  H05H5/04

CPC classification number: H01J37/147 ,  H01J37/3171 ,  H01J2237/047 ,  H01J2237/1538 ,  H05H7/001 ,  H05H7/12 ,  H05H2007/004 ,  H05H2007/122

Abstract: An electrode assembly for accelerating or decelerating an ion beam is provided. In one example, the electrode assembly may include a pair of exit electrodes adjacent to an exit opening of the electrode assembly. The pair of exit electrodes may be positioned on opposite sides of a first plane aligned with a first dimension of the exit opening. A pair of pierce electrodes may be adjacent to the pair of exit electrodes. The pair of pierce electrodes may be positioned on opposite sides of a second plane aligned with a second dimension of the exit opening. The second dimension of the exit opening may be perpendicular to the first dimension of the exit opening. Each pierce electrode may include an angled surface positioned such that a dimension of the angled surface forms an angle of between 40 and 80 degrees with respect to the second plane.

Abstract translation: 提供了用于加速或减速离子束的电极组件。 在一个示例中，电极组件可以包括与电极组件的出口相邻的一对出口电极。 一对出口电极可以定位在与出口的第一尺寸对准的第一平面的相对侧上。 一对穿孔电极可以与该对出口电极相邻。 一对穿孔电极可以定位在与出口开口的第二尺寸对准的第二平面的相对侧上。 出口的第二尺寸可以垂直于出口的第一尺寸。 每个穿孔电极可以包括成角度的表面，其被定位成使得成角度的表面的尺寸相对于第二平面形成介于40度和80度之间的角度。

公开(公告)号：US09209278B2

公开(公告)日：2015-12-08

申请号：US14195712

申请日：2014-03-03

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Daniel Tang ,  Tzu-Shih Yen

IPC: H01L21/8238 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  H01L29/165 ,  H01L29/51 ,  H01L29/06

CPC classification number: H01L29/66795 ,  H01L21/02532 ,  H01L21/0257 ,  H01L21/30604 ,  H01L21/31053 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/517 ,  H01L29/66803 ,  H01L29/7848 ,  H01L29/785

Abstract: A finFET is formed having a fin with a source region, a drain region, and a channel region between the source and drain regions. The fin is etched on a semiconductor wafer. A gate stack is formed having an insulating layer in direct contact with the channel region and a conductive gate material in direct contact with the insulating layer. The source and drain regions are etched leaving the channel region of the fin. Epitaxial semiconductor is grown on the sides of the channel region that were adjacent the source and drain regions to form a source epitaxy region and a drain epitaxy region. The source and drain epitaxy regions are doped in-situ while growing the epitaxial semiconductor.

Abstract translation: 形成具有在源极区和漏极区之间具有源极区，漏极区和沟道区的鳍的finFET。 翅片在半导体晶片上蚀刻。 形成具有与沟道区域直接接触的绝缘层和与绝缘层直接接触的导电栅极材料的栅极堆叠。 蚀刻源极和漏极区域，离开鳍片的沟道区域。 外延半导体在与源极和漏极区相邻的沟道区的侧面生长以形成源外延区和漏极外延区。 源极和漏极外延区域在生长外延半导体的同时原位掺杂。

公开(公告)号：US09057129B2

公开(公告)日：2015-06-16

申请号：US14183320

申请日：2014-02-18

Applicant: Advanced Ion Beam Technology., Inc.

Inventor： Zhimin Wan ,  John D. Pollock ,  Donald Wayne Berrian ,  Causon Ko-Chuan Jen

IPC: C23C14/48 ,  H01J37/09 ,  H01J37/317

CPC classification number: C23C14/48 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/24542 ,  H01J2237/31711

Abstract: A variable aperture within an aperture device is used to shape the ion beam before the substrate is implanted by shaped ion beam, especially to finally shape the ion beam in a position right in front of the substrate. Hence, different portions of a substrate, or different substrates, can be implanted respectively by different shaped ion beams without going through using multiple fixed apertures or retuning the ion beam each time. In other words, different implantations may be achieved respectively by customized ion beams without high cost (use multiple fixed aperture devices) and complex operation (retuning the ion beam each time). Moreover, the beam tune process for acquiring a specific ion beam to be implanted may be accelerated, to be faster than using multiple fixed aperture(s) and/or retuning the ion beam each time, because the adjustment of the variable aperture may be achieved simply by mechanical operation.

Abstract translation: 在通过成形离子束注入衬底之前，使用孔装置内的可变孔径来形成离子束，特别是最终在离开衬底前方的位置形成离子束。 因此，可以通过不同的成形离子束分别注入衬底或不同衬底的不同部分，而不需要通过使用多个固定孔或每次重新调整离子束。 换句话说，可以通过定制的离子束分别实现不同的注入，而不需要高成本（使用多个固定孔径器件）和复杂的操作（每次重新调整离子束）。 此外，可以加速用于获取要注入的特定离子束的光束调整过程，以便每次都比使用多个固定孔径和/或重新调整离子束更快，因为可以实现可变孔径的调节 简单地通过机械操作。

公开(公告)号：US08987691B2

公开(公告)日：2015-03-24

申请号：US13746257

申请日：2013-01-21

Applicant: Advanced Ion Beam Technology, Inc.

Inventor： Zhimin Wan ,  John D. Pollock ,  Don Berrian

IPC: H01J37/00 ,  H01L21/265 ,  C23C14/04 ,  C23C14/48 ,  C23C14/50 ,  H01J37/09 ,  H01J37/317

CPC classification number: H01L21/265 ,  C23C14/04 ,  C23C14/48 ,  C23C14/50 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/1503 ,  H01J2237/20228 ,  H01J2237/30488

Abstract: An ion implanter and an ion implant method are disclosed. Essentially, the wafer is moved along one direction and an aperture mechanism having an aperture is moved along another direction, so that the projected area of an ion beam filtered by the aperture is two-dimensionally scanned over the wafer. Thus, the required hardware and/or operation to move the wafer may be simplified. Further, when a ribbon ion beam is provided, the shape/size of the aperture may be similar to the size/shape of a traditional spot beam, so that a traditional two-dimensional scan may be achieved. Optionally, the ion beam path may be fixed without scanning the ion beam when the ion beam is to be implanted into the wafer, also the area of the aperture may be adjustable during a period of moving the aperture across the ion beam.

Abstract translation: 公开了一种离子注入机和离子注入方法。 基本上，晶片沿着一个方向移动，并且具有孔的孔径机构沿着另一个方向移动，使得被孔径过滤的离子束的投影面积在晶片上被二维地扫描。 因此，可以简化移动晶片所需的硬件和/或操作。 此外，当提供带状离子束时，孔的形状/尺寸可以类似于传统点波束的尺寸/形状，从而可以实现传统的二维扫描。 可选地，当将离子束注入到晶片中时，可以固定离子束路径而不扫描离子束，而在穿过离子束的孔移动期间，孔径的区域也可以是可调节的。

公开(公告)号：US20150056380A1

公开(公告)日：2015-02-26

申请号：US13975206

申请日：2013-08-23

Applicant: ADVANCED ION BEAM TECHNOLOGY , INC.

Inventor： Stephen Edward Savas ,  Xiao Bai ,  Zhimin Wan ,  Peter M. Kopalidis

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J2237/0815 ,  H01J2237/0817

Abstract: An ion source uses at least one induction coil to generate ac magnetic field to couple rf/VHF power into a plasma within a vessel, where the excitation coil may be a single set of turns each turn having lobes or multiple separate sets of windings. The excitation coil is positioned outside and proximate that side of the vessel that is opposite to the extraction slit, and elongated parallel to the length dimension of the extraction slit. The conducting shield(s) positioned outside or integrated with the well of the vessel are used to block the capacitive coupling to the plasma and/or to collect any rf/VHF current may be coupled into the plasma. The conducting shield positioned between the vessel and the coil set can either shield the plasma from capacitive coupling from the excitation coils, or be tuned to have a higher rf/VHF voltage to ignite or clean the source.

Abstract translation: 离子源使用至少一个感应线圈来产生交流磁场，以将rf / VHF功率耦合到容器内的等离子体中，其中所述激励线圈可以是单一组的匝，每一匝具有凸角或多个单独的绕组组。 励磁线圈位于与抽出狭缝相对的容器的外侧和附近，并且平行于提取狭缝的长度尺寸延伸。 位于外部或与容器的阱集成在一起的导电屏蔽用于阻挡与等离子体的电容耦合和/或收集任何rf / VHF电流可以耦合到等离子体中。 位于容器和线圈组之间的导电屏蔽件可以屏蔽来自激励线圈的电容耦合的等离子体，或者被调谐为具有较高的rf / VHF电压以点燃或清洁源极。

公开(公告)号：US20130299722A1

公开(公告)日：2013-11-14

申请号：US13945013

申请日：2013-07-18

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： CHENG-HUI SHEN ,  ZHIMIN WAN

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J2237/24405 ,  H01J2237/2446 ,  H01J2237/24507 ,  H01J2237/24542

Abstract: An ion implantation method and an ion implanter with a beam profiler are proposed in this invention. The method comprises setting scan conditions, detecting the ion beam profile, calculating the dose profile according to the detected ion beam profile and scan conditions, determining the displacement for ion implantation and implanting ions on a wafer surface. The ion implanter used the beam profiler to detect the ion beam profile, calculate dose profile and determine the displacement and used the displacement in ion implantation for optimizing, wherein the beam profiler comprises a body with ion channel and detection unit behind the ion channel in the body for beam profile detection. The beam profiler may be a 1-dimensional, 2-dimensional or angle beam profiler.

Abstract translation: 本发明提出了一种具有光束轮廓仪的离子注入方法和离子注入机。 该方法包括设置扫描条件，检测离子束分布，根据检测到的离子束分布和扫描条件计算剂量分布，确定离子注入的位移和在晶片表面上注入离子。 离子注入机使用光束轮廓仪检测离子束轮廓，计算剂量分布并确定位移，并使用离子注入中的位移进行优化，其中光束轮廓仪包括具有离子通道的主体和离子通道后面的检测单元 用于光束轮廓检测的主体。 光束轮廓仪可以是一维的，二维的或角度的光束分析器。