公开(公告)号：US20110136318A1

公开(公告)日：2011-06-09

申请号：US12783216

申请日：2010-05-19

Applicant: In Gyoo KIM ,  Dae Seo Park ,  Jun Taek Hong ,  Gyungock Kim

Inventor： In Gyoo KIM ,  Dae Seo Park ,  Jun Taek Hong ,  Gyungock Kim

IPC: H01L21/31

CPC classification number: G02B6/136 ,  G02B6/132 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2203/15 ,  H01L27/1203

Abstract: Provided is a method of manufacturing a semiconductor device. According to the method, a first buried oxide layer is formed in the semiconductor substrate in a first region, such that a first semiconductor layer is defined on the first buried oxide layer. An active portion is defined by forming a trench in the semiconductor substrate in a second region. A capping semiconductor pattern is formed on a top surface and an upper portion of a sidewall of the active portion. An oxide layer is formed by oxidizing the capping semiconductor pattern and an exposed lower portion of the sidewall of the active portion, such that the oxide layer surrounds a non-oxidized portion of the active portion. The non-oxidized portion of the active portion is a core and one end of the core is connected to a first optical device formed at the first semiconductor.

Abstract translation: 提供一种制造半导体器件的方法。 根据该方法，在第一区域中的半导体衬底中形成第一掩埋氧化物层，使得第一半导体层被限定在第一掩埋氧化物层上。 通过在第二区域中在半导体衬底中形成沟槽来限定有源部分。 在有源部分的侧壁的顶表面和上部形成封盖半导体图案。 通过氧化覆盖半导体图案和有源部分的侧壁的暴露下部来形成氧化物层，使得氧化物层包围有源部分的未氧化部分。 有源部分的未氧化部分是芯，并且芯的一端连接到形成在第一半导体处的第一光学器件。

公开(公告)号：US20110135243A1

公开(公告)日：2011-06-09

申请号：US12816550

申请日：2010-06-16

Applicant: Jeong Woo Park ,  Jongbum You ,  Gyungock Kim

Inventor： Jeong Woo Park ,  Jongbum You ,  Gyungock Kim

IPC: G02F1/035 ,  G02B6/26

CPC classification number: G02F1/2257 ,  G02F1/015 ,  G02F2001/212

Abstract: Provided is an electro-optic device. The electro-optic device includes an input Y-branch comprising a first input branch and a second input branch, an output Y-branch comprising a first output branch and a second output branch, a first optical modulator and a second optical modulator connected in series between the first input branch and the first output branch, and a third optical modulator connecting the second input branch to the second output branch. The first optical modulator comprises a PIN diode, and each of the second optical modulator and the third optical modulator comprises a PN diode.

Abstract translation: 提供了一种电光装置。 电光装置包括：输入Y分支，包括第一输入分支和第二输入分支，包括第一输出分支和第二输出分支的输出Y分支，串联连接的第一光调制器和第二光调制器 在第一输入分支和第一输出分支之间，以及将第二输入分支连接到第二输出分支的第三光调制器。 第一光调制器包括PIN二极管，并且第二光调制器和第三光调制器中的每一个包括PN二极管。

公开(公告)号：US20110133187A1

公开(公告)日：2011-06-09

申请号：US12765705

申请日：2010-04-22

Applicant: Sang Hoon KIM ,  Gyungock Kim ,  In Gyoo Kim ,  Dongwoo Suh ,  Jiho Joo ,  Ki Seok Jang

Inventor： Sang Hoon KIM ,  Gyungock Kim ,  In Gyoo Kim ,  Dongwoo Suh ,  Jiho Joo ,  Ki Seok Jang

IPC: H01L31/0256 ,  H01L31/18 ,  H01L31/0232

CPC classification number: G02B6/12004 ,  G02B2006/12176 ,  G02B2006/12188 ,  H01L31/105 ,  H01L31/1804 ,  H01L31/1812 ,  Y02E10/547 ,  Y02P70/521

Abstract: Provided is a manufacturing method of a photo detector. The method includes: forming a first single crystal semiconductor layer and an optical waveguide protruding from the first single crystal semiconductor layer; forming an insulation layer on the first single crystal semiconductor layer to cover the optical waveguide; forming an opening by etching the insulation layer to expose the top surface of the optical waveguide; forming a second single crystal semiconductor layer from the top surface of the exposed optical waveguide, in the opening; and selectively forming a poly semiconductor layer from the top surface of the second single crystal semiconductor layer, the poly semiconductor layer being doped with dopants.

Abstract translation: 提供了一种光电检测器的制造方法。 该方法包括：形成从第一单晶半导体层突出的第一单晶半导体层和光波​​导; 在所述第一单晶半导体层上形成绝缘层以覆盖所述光波导; 通过蚀刻绝缘层来形成开口以暴露光波导的顶表面; 在所述开口中从所述暴露的光波导的顶表面形成第二单晶半导体层; 以及从所述第二单晶半导体层的顶表面选择性地形成多晶半导体层，所述多晶半导体层掺杂有掺杂剂。

公开(公告)号：US07915700B2

公开(公告)日：2011-03-29

申请号：US12441377

申请日：2007-04-03

Applicant: Dongwoo Suh ,  Gyungock Kim

Inventor： Dongwoo Suh ,  Gyungock Kim

IPC: H01L31/0232 ,  H01L23/58

CPC classification number: H01L27/144 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a monolithic integrated composite device including: a silicon substrate which is partitioned into a silicon integrated circuit forming region and a silicon optical device forming region; a buried oxide layer which is formed locally in the silicon substrate of the silicon optical device forming region and isolates unit devices of the silicon optical device forming region; an overlay layer formed locally on the buried oxide layer; a silicon optical device formed in the silicon optical device forming region using the silicon overlay layer; a silicon integrated circuit formed in the silicon integrated circuit forming region of the silicon substrate; and wiring connecting the silicon integrated circuit and the silicon optical device or connecting the silicon optical devices or connecting the silicon integrated circuits.

Abstract translation: 提供了一种单片集成复合器件，包括：分隔成硅集成电路形成区域的硅衬底和硅光学器件形成区域; 在硅光学器件形成区域的硅衬底中局部形成的掩埋氧化物层，并隔离硅光学器件形成区域的单元器件; 在掩埋氧化物层上局部形成的覆盖层; 使用所述硅覆盖层形成在所述硅光学器件形成区域中的硅光学器件; 形成在硅衬底的硅集成电路形成区域中的硅集成电路; 以及连接硅集成电路和硅光学器件或连接硅光学器件或连接硅集成电路的布线。

公开(公告)号：US20110049660A1

公开(公告)日：2011-03-03

申请号：US12763990

申请日：2010-04-20

Applicant: Dongwoo SUH ,  Sanghoon Kim ,  Jiho Joo ,  Gyungock Kim

Inventor： Dongwoo SUH ,  Sanghoon Kim ,  Jiho Joo ,  Gyungock Kim

IPC: H01L31/0232

CPC classification number: G02B6/12004 ,  G02B6/131 ,  G02B6/136 ,  G02B2006/121 ,  H01L31/0352

Abstract: Provided is a waveguide photodetector that may improve an operation speed and increase or maximize productivity. The waveguide photodetector includes a waveguide layer extending in a first direction, an absorption layer disposed on the waveguide layer, a first electrode disposed on the absorption layer, a second electrode disposed on the waveguide layer, the second electrode being spaced from the first electrode and the absorption layer in a second direction crossing the first direction, and at least one bridge electrically connecting the absorption layer to the second electrode.

Abstract translation: 提供了可以提高操作速度并增加或最大化生产率的波导光电检测器。 波导光电检测器包括沿第一方向延伸的波导层，设置在波导层上的吸收层，设置在吸收层上的第一电极，设置在波导层上的第二电极，第二电极与第一电极间隔开， 所述吸收层在与所述第一方向交叉的第二方向上，以及至少一个电桥将所述吸收层电连接到所述第二电极。

公开(公告)号：US20100303435A1

公开(公告)日：2010-12-02

申请号：US12555767

申请日：2009-09-08

Applicant: Sahnggi Park ,  Kap-Joong Kim ,  Duk Jun Kim ,  Gyungock Kim

Inventor： Sahnggi Park ,  Kap-Joong Kim ,  Duk Jun Kim ,  Gyungock Kim

IPC: G02B6/00 ,  G03F7/20

CPC classification number: G02B6/12007

Abstract: Provided are an optical device and a method of fabricating the same. The optical device includes: a substrate; and a ring resonator on the substrate. The ring resonator includes: a cladding layer including a lower cladding layer and an upper cladding layer on the substrate; a core including a plurality of rings between the lower cladding layer and the upper cladding layer; and an embeded layer interposed between the core and the cladding layer and having a refractive index less than that of the core and more than that of the cladding layer.

Abstract translation: 提供了一种光学器件及其制造方法。 光学装置包括：基板; 和在基板上的环形谐振器。 环形谐振器包括：在基板上包括下包层和上包层的包层; 芯包括在下包层和上包层之间的多个环; 以及插入在芯和包覆层之间并且折射率小于芯的折射率并且大于包覆层的折射率的嵌入层。

公开(公告)号：US20100150500A1

公开(公告)日：2010-06-17

申请号：US12491454

申请日：2009-06-25

Applicant: Junghyung PYO ,  Duk-Jun Kim ,  In-Gyoo Kim ,  Gyungock Kim

Inventor： Junghyung PYO ,  Duk-Jun Kim ,  In-Gyoo Kim ,  Gyungock Kim

IPC: G02B6/34 ,  G02B6/26

CPC classification number: G02B6/1228 ,  G02B6/12004 ,  G02B6/124 ,  G02B6/34

Abstract: Provided is an optical device, which includes a substrate, a first cladding disposed on the substrate, a first optical waveguide extended in a first direction on the first cladding, and having a first refractive index, a side grating formed in at least one side of the first optical waveguide, a second optical waveguide filling a space of the side grating, extended in a second direction across the first direction on the first cladding, and having a second refractive index, and a second cladding disposed on the second optical waveguide, and having a third refractive index, wherein the first refractive index is greater than the second refractive index, and the second refractive index is greater than the third refractive index.

Abstract translation: 提供了一种光学装置，其包括基板，设置在基板上的第一包层，在第一包层上沿第一方向延伸的第一光波导，并且具有第一折射率，在至少一侧形成的侧光栅 所述第一光波导，填充所述侧光栅的空间的第二光波导，沿着所述第一包层上的所述第一方向的第二方向延伸并具有第二折射率，以及设置在所述第二光波导上的第二包层，以及 具有第三折射率，其中所述第一折射率大于所述第二折射率，并且所述第二折射率大于所述第三折射率。

公开(公告)号：US20100142878A1

公开(公告)日：2010-06-10

申请号：US12504607

申请日：2009-07-16

Applicant: Jeong Woo PARK ,  Jongbum You ,  Gyungock Kim

Inventor： Jeong Woo PARK ,  Jongbum You ,  Gyungock Kim

IPC: G02F1/01 ,  G02B6/12 ,  H01L21/22

CPC classification number: G02F1/025 ,  G02F2001/0156 ,  G02F2201/063 ,  G02F2201/12 ,  G02F2202/105 ,  G02F2202/32

Abstract: An absorption modulator is provided. The absorption modulator includes a substrate, an insulation layer disposed on the substrate, and a waveguide having a P-I-N diode structure on the insulation layer. Absorptance of an intrinsic region in the P-I-N diode structure is varied when modulating light inputted to the waveguide. The absorption modulator obtains the improved characteristics, such as high speed, low power consumption, and small size, because it greatly reduces the cross-sectional area of the P-I-N diode structure.

Abstract translation: 提供吸收调制器。 吸收调制器包括基板，设置在基板上的绝缘层，以及在绝缘层上具有P-I-N二极管结构的波导。 当调制输入到波导的光时，P-I-N二极管结构中的本征区域的吸收变化。 吸收调制器由于大大降低了P-I-N二极管结构的截面面积而获得了高速，低功耗，小尺寸等改进的特性。

公开(公告)号：US07728327B2

公开(公告)日：2010-06-01

申请号：US11011878

申请日：2004-12-13

Applicant: Hyun Tak Kim ,  Doo Hyeb Youn ,  Byung Gyu Chae ,  Kwang Yong Kang ,  Yong Sik Lim ,  Gyungock Kim ,  Sunglyul Maeng ,  Seong Hyun Kim

Inventor： Hyun Tak Kim ,  Doo Hyeb Youn ,  Byung Gyu Chae ,  Kwang Yong Kang ,  Yong Sik Lim ,  Gyungock Kim ,  Sunglyul Maeng ,  Seong Hyun Kim

IPC: H01L29/04

CPC classification number: H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L45/1625

Abstract: Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer.

Abstract translation: 提供了使用突变MIT半导体材料层的2端子半导体器件。 2端子半导体器件包括第一电极层，具有小于2eV的能隙的突变MIT半导体有机或无机材料层和设置在第一电极层上的空穴层中的孔，以及设置在突发上的第二电极层 MIT半导体有机或无机材料层。 通过施加在第一电极层和第二电极层之间的场，在突变MIT半导体材料层中产生突变MIT。

公开(公告)号：US20100002978A1

公开(公告)日：2010-01-07

申请号：US12517802

申请日：2007-08-07

Applicant: Jeong-Woo Park ,  Gyungock Kim ,  Young-Ahn Leem ,  Hyun-Soo Kim ,  Bongki Mheen

Inventor： Jeong-Woo Park ,  Gyungock Kim ,  Young-Ahn Leem ,  Hyun-Soo Kim ,  Bongki Mheen

IPC: G02F1/035 ,  G02B6/12

CPC classification number: H01L31/12 ,  H01L27/144

Abstract: Provided are a photoelectric device using a PN diode and a silicon integrated circuit (IC) including the photoelectric device. The photoelectric device includes: a substrate; and an optical waveguide formed as a PN diode on the substrate, wherein a junction interface of the PN diode is formed in a direction in which light advances; and an electrode applying a reverse voltage to the PN diode, wherein N-type and P-type semiconductors of the PN diode are doped at high concentrations and the doping concentration of the N-type semiconductor is higher than or equal to that of the P-type semiconductor.

Abstract translation: 提供了使用PN二极管的光电装置和包括光电装置的硅集成电路（IC）。 光电装置包括：基板; 以及在所述衬底上形成为PN二极管的光波导，其中所述PN二极管的结界面沿光前进的方向形成; 以及向PN二极管施加反向电压的电极，其中PN二极管的N型和P型半导体以高浓度掺杂，并且N型半导体的掺杂浓度高于或等于P 型半导体。