公开(公告)号：US20100040802A1

公开(公告)日：2010-02-18

申请号：US12582912

申请日：2009-10-21

Applicant: Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Ooba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

Inventor： Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Ooba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

IPC: H05H1/24

CPC classification number: H01J37/321 ,  C23C16/08 ,  C23C16/14 ,  C23C16/4488 ,  H01J37/32357 ,  H01J2237/3326 ,  H01L21/28556 ,  H01L21/76879

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract translation: 在金属膜制造装置中，在室内用Cl 2气体等离子体蚀刻铜板构件，形成包含Cu成分和Cl 2气体的前体; 并且将铜板构件和基板的温度和它们的温度之间的差异预先控制，以将前体的Cu组分沉积在基板上，从而形成Cu膜。 在该装置中，Cl *形成在与腔室内部连通的通道的激励室中以流过Cl 2气体，并且将Cl *供应到室中以从吸附到基板上的前体中抽出Cl 2气体， 从而促进Cu成膜反应。 该设备具有高的成膜速度，可以使用廉价的起始材料，并且可以最小化残留在膜中的杂质。

公开(公告)号：US20090324848A1

公开(公告)日：2009-12-31

申请号：US12511891

申请日：2009-07-29

Applicant: Ryuichi Matsuda ,  Naoki Yahata ,  Hitoshi Sakamoto

Inventor： Ryuichi Matsuda ,  Naoki Yahata ,  Hitoshi Sakamoto

IPC: C23C16/513 ,  C23F1/02

CPC classification number: H01J37/321 ,  C23C16/14 ,  C23C16/4488 ,  C23C16/455 ,  H01J2237/2001

Abstract: A source gas is supplied into a chamber through a nozzle, and electromagnetic waves are thrown from a plasma antenna into the chamber. The resulting Cl2 gas plasma causes an etching reaction to a plurality of copper protrusions, which are arranged between a substrate and a ceiling member in a discontinuous state relative to the flowing direction of electricity in the plasma antenna, to form a precursor (CuxCly). The precursor (CuxCly) transported toward the substrate controlled to a lower temperature than the temperature of an etched member is converted into only Cu ions by a reduction reaction, and directed at the substrate to form a thin Cu film on the surface of the substrate. The speed of film formation is fast, the cost is markedly decreased, and the resulting thin Cu film is of high quality.

Abstract translation: 源气体通过喷嘴供应到室中，并且电磁波从等离子体天线投入到室中。 所产生的Cl 2气体等离子体相对于等离子体天线中的电流的流动方向，以不连续状态配置在基板和顶板部件之间的多个铜突起进行蚀刻反应，形成前体（CuxCly）。 转移到被控制到比蚀刻部件的温度更低的温度的衬底的前体（CuxCly）通过还原反应被转换为仅仅Cu离子，并且指向衬底以在衬底的表面上形成薄的Cu膜。 成膜速度快，成本明显降低，生成的薄铜膜质量好。

公开(公告)号：US07588799B2

公开(公告)日：2009-09-15

申请号：US11319458

申请日：2005-12-29

Applicant: Ryuichi Matsuda ,  Naoki Yahata ,  Hitoshi Sakamoto

Inventor： Ryuichi Matsuda ,  Naoki Yahata ,  Hitoshi Sakamoto

IPC: C23C16/00 ,  H01L21/31

CPC classification number: H01J37/321 ,  C23C16/14 ,  C23C16/4488 ,  C23C16/455 ,  H01J2237/2001

Abstract: A source gas is supplied into a chamber through a nozzle, and electromagnetic waves are thrown from a plasma antenna into the chamber. The resulting Cl2 gas plasma causes an etching reaction to a plurality of copper protrusions, which are arranged between a substrate and a ceiling member in a discontinuous state relative to the flowing direction of electricity in the plasma antenna, to form a precursor (CuxCly). The precursor (CuxCly) transported toward the substrate controlled to a lower temperature than the temperature of an etched member is converted into only Cu ions by a reduction reaction, and directed at the substrate to form a thin Cu film on the surface of the substrate. The speed of film formation is fast, the cost is markedly decreased, and the resulting thin Cu film is of high quality.

Abstract translation: 源气体通过喷嘴供应到室中，并且电磁波从等离子体天线投入到室中。 所产生的Cl 2气体等离子体相对于等离子体天线中的电流的流动方向，以不连续状态配置在基板和顶板部件之间的多个铜突起进行蚀刻反应，形成前体（CuxCly）。 转移到被控制到比蚀刻部件的温度更低的温度的衬底的前体（CuxCly）通过还原反应被转换为仅仅Cu离子，并且指向衬底以在衬底的表面上形成薄的Cu膜。 成膜速度快，成本明显降低，生成的薄铜膜质量好。

公开(公告)号：US20090095425A1

公开(公告)日：2009-04-16

申请号：US12247432

申请日：2008-10-08

Applicant: Hitoshi SAKAMOTO ,  Toshihiko NISHIMORI ,  Saneyuki GOYA ,  Takao ABE ,  Noriaki UEDA

Inventor： Hitoshi SAKAMOTO ,  Toshihiko NISHIMORI ,  Saneyuki GOYA ,  Takao ABE ,  Noriaki UEDA

IPC: C23F1/08

CPC classification number: C23C16/45565 ,  C23C16/08 ,  C23C16/14 ,  C23C16/4488 ,  C23C16/452 ,  C23C16/505 ,  H01L21/28556

Abstract: An apparatus for forming a metal film, including a reaction vessel for housing a substrate, a precursor feeding device for bubbling a carrier gas through a liquid organometallic complex, vaporizing the organometallic complex, producing a precursor from the vaporized organometallic complex, and feeding the precursor into the reaction vessel, a rotating magnetic field generator for creating a rotating magnetic field in a space above the substrate, and a second plasma generator for generating a plasma from a reducing gas fed into the reaction vessel.

Abstract translation: 一种用于形成金属膜的装置，包括用于容纳基底的反应容器，用于使载气鼓泡通过液体有机金属络合物的前体进料装置，汽化有机金属配合物，从蒸发的有机金属络合物制备前体，以及将前体 旋转磁场发生器，用于在衬底上方的空间中产生旋转磁场;以及第二等离子体发生器，用于从进料到反应容器中的还原气体产生等离子体。

公开(公告)号：US07314038B2

公开(公告)日：2008-01-01

申请号：US11519898

申请日：2006-09-13

Applicant: Hitoshi Sakamoto

Inventor： Hitoshi Sakamoto

IPC: F02D9/10 ,  F02M51/00

CPC classification number: F02D9/1095 ,  F02D9/1055 ,  F02D2009/0279 ,  F02M3/07 ,  F02M3/14 ,  F02M23/001 ,  F02M23/006 ,  F02M69/044 ,  Y02T10/146

Abstract: To provide a plural openings control type idle air control device with a low cost by adding a few parts for controlling plural bypass air passages to a single openings control type idle air control device for opening and closing a single bypass air passage, a valve body 3 is formed at a lower end part of a valve body driving mechanism 1 along the operating direction X-X of the valve body driving mechanism 1, a cylindrical plunger 5 is mounted on an outer periphery of the valve body 3, plural bypass air passages 16a, 16b connected with plural intake passages are provided to be opened on a side wall of a valve body storage chamber 13, and plural openings of the bypass air passages are controlled so as to be opened and closed by the plunger 5 slidably provided in the valve body storage chamber 13.

Abstract translation: 为了通过将用于控制多个旁通空气通道的几个部分添加到用于打开和关闭单个旁路空气通道的单个开口控制型怠速空气控制装置来提供具有低成本的多个开口控制型空转控制装置，阀体3 沿阀体驱动机构1的操作方向XX形成在阀体驱动机构1的下端部，在阀体3的外周安装有圆柱形的柱塞5，多个旁通空气通路16a， 与多个进气通道连接的16b设置成在阀体储存室13的侧壁上打开，旁通空气通道的多个开口被可滑动地设置在阀门中的柱塞5打开和关闭 身体储存室13。

公开(公告)号：US07283346B2

公开(公告)日：2007-10-16

申请号：US10481425

申请日：2002-12-26

Applicant: Kazuto Yoshida ,  Masahiko Inoue ,  Ryuichi Matsuda ,  Hitoshi Sakamoto

Inventor： Kazuto Yoshida ,  Masahiko Inoue ,  Ryuichi Matsuda ,  Hitoshi Sakamoto

IPC: H01T2/30

CPC classification number: H01L21/6833 ,  H02N13/00

Abstract: An electrode pattern of an electrostatic chuck includes linear portions in a radial direction and a plurality of concentric C-shaped portions branching out from the linear portions. The linear portions are disposed opposite to each other in a diametrical direction and are such that they lie on a line that is almost straight. The C-shaped portions are engaged alternately like teeth of a comb.

Abstract translation: 静电卡盘的电极图案包括径向的直线部分和从直线部分分支出的多个同心的C形部分。 直线部分在直径方向上彼此相对设置，并且使得它们位于几乎直线的线上。 C形部分交替地与梳子的齿接合。

公开(公告)号：US20070141274A1

公开(公告)日：2007-06-21

申请号：US11638510

申请日：2006-12-14

Applicant: Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

Inventor： Hitoshi Sakamoto ,  Naoki Yahata ,  Ryuichi Matsuda ,  Yoshiyuki Ooba ,  Toshihiko Nishimori

IPC: H05H1/24 ,  H01L21/20 ,  C23C16/00 ,  H01L21/31

CPC classification number: H01L21/7685 ,  C23C8/36 ,  C23C16/14 ,  C23C16/34 ,  C23C16/40 ,  C23C16/4488 ,  C23C16/452 ,  C23C16/507 ,  C23C16/56 ,  C23F4/00 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76888 ,  H01L2221/1078

Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

公开(公告)号：US07208421B2

公开(公告)日：2007-04-24

申请号：US10384932

申请日：2003-03-07

Applicant: Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Ooba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

Inventor： Hitoshi Sakamoto ,  Naoki Yahata ,  Toshihiko Nishimori ,  Yoshiyuki Ooba ,  Hiroshi Tonegawa ,  Ikumasa Koshiro ,  Yuzuru Ogura

IPC: H01L21/302

CPC classification number: H01J37/321 ,  C23C16/08 ,  C23C16/14 ,  C23C16/4488 ,  H01J37/32357 ,  H01J2237/3326 ,  H01L21/28556 ,  H01L21/76879

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract translation: 在金属膜制造装置中，在室内用Cl 2 O 2气体等离子体蚀刻铜板构件，以形成包含Cu成分和Cl 2/2气体的前体; 并且将铜板构件和基板的温度和它们的温度之间的差异预先控制，以将前体的Cu组分沉积在基板上，从而形成Cu膜。 在该装置中，Cl *形成在与腔室内部连通的通道的激励室中，以流过Cl 2气体，并且将Cl *供应到室中以抽出Cl < 从吸附在基材上的前驱物中吸收气体，从而促进Cu成膜反应。 该设备具有高的成膜速度，可以使用廉价的起始材料，并且可以最小化残留在膜中的杂质。

公开(公告)号：US07048973B2

公开(公告)日：2006-05-23

申请号：US10183512

申请日：2002-06-28

Applicant: Hitoshi Sakamoto ,  Naoki Yahata

Inventor： Hitoshi Sakamoto ,  Naoki Yahata

IPC: C23C16/14 ,  C23C16/448 ,  C23C16/50

CPC classification number: C23C16/4488 ,  C23C16/14 ,  C23C16/448

Abstract: A copper film vapor phase deposition method includes the steps of exposing high-purity copper to a plasma of a gas containing chlorine gas to etch the high-purity copper, thereby generating active CuxCly, wherein x is 1 to 3, y is 1 to 3, gas, and forming a copper film by transporting the CuxCly gas onto the surface of a substrate to be processed. By using inexpensive high-purity copper and inexpensive chlorine, hydrogen chloride, or chlorine and hydrogen as source gases, a copper film containing no residual impurity such as carbon and having high film quality can be formed with high reproducibility.

公开(公告)号：US06488720B2

公开(公告)日：2002-12-03

申请号：US09199505

申请日：1998-11-25

Applicant: Hitoshi Sakamoto ,  Koichi Kanno ,  Yuzuru Takahasi

Inventor： Hitoshi Sakamoto ,  Koichi Kanno ,  Yuzuru Takahasi

IPC: H01M460

CPC classification number: H01M4/583 ,  C04B35/528 ,  H01M10/052 ,  Y10T29/49108

Abstract: A carbonaceous material for use as an anode material in secondary batteries using non-aqueous solvent comprises a material obtained by calcining a solid, the solid, in turn, being obtained by heating tar and/or pitch with furfural in the presence of an acid catalyst, the use of the resulting anode material imparting to the battery a relatively large capacity while having only a small irreversible capacity loss in the first cycle.

Abstract translation: 用于使用非水溶剂的二次电池中的阳极材料的碳质材料包括通过煅烧固体获得的材料，该固体又是通过在酸催化剂存在下用糠醛加热焦油和/或沥青得到的 使用所得到的阳极材料赋予电池相当大的容量，同时在第一周期中仅具有小的不可逆容量损失。