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    White Light Emitting Structures with Controllable Emission Color Temperature
    73.
    发明申请
    White Light Emitting Structures with Controllable Emission Color Temperature 有权
    具有可控发射色温的白光发射结构

    公开(公告)号：US20160359084A1

    公开(公告)日：2016-12-08

    申请号：US15173511

    申请日：2016-06-03

    Applicant: Ostendo Technologies, Inc.

    Inventor： Hussein S. El-Ghoroury ,  Mikhail V. Kisin ,  Yea-Chuan Milton Yeh ,  Chih-Li Chuang ,  Jyh-Chia Chen

    IPC: H01L33/06 ,  H01L33/32 ,  H01L33/08

    CPC classification number: H01L33/08 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0421 ,  H01S5/1096 ,  H01S5/2009 ,  H01S5/3407 ,  H01S5/34333 ,  H01S5/4043 ,  H01S5/4093

    Abstract: Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.

    Abstract translation: 本文公开了用于掺入中间载体阻挡层的半导体发光器件（LED）的多层光学活性区域，所述中间载体阻挡层具有用于组合物和掺杂水平的设计参数，以提供对横跨载流子阻挡层的载流子注入分布的有效控制 活性区域以实现期望的器件注入特性。 本文中讨论的实施例的示例包括：在可见光范围内操作的全部覆盖RGB色域的多量子阱可变颜色LED，在可见光范围内工作的多量子阱可变颜色LED，具有扩展 超出标准RGB色域的色域，具有可变色温的多量子阱发光白光LED，以及具有均匀填充的有源层的多量子阱LED。

    Semiconductor wafer bonding incorporating electrical and optical interconnects
    74.
    发明授权
    Semiconductor wafer bonding incorporating electrical and optical interconnects 有权
    包含电和光互连的半导体晶片接合

    公开(公告)号：US09306116B2

    公开(公告)日：2016-04-05

    申请号：US14537627

    申请日：2014-11-10

    Applicant: Ostendo Technologies, Inc.

    Inventor： Hussein S. El-Ghoroury ,  Chih-Li Chuang ,  Kameshwar Yadavalli ,  Qian Fan

    IPC: H01L21/00 ,  H01L33/00 ,  H01L27/146 ,  H01L21/18

    CPC classification number: H01L33/0079 ,  H01L21/187 ,  H01L27/14618 ,  H01L27/14683 ,  H01L33/0066 ,  H01L33/0095 ,  H01L2924/0002 ,  H01L2924/351 ,  H01L2933/0066 ,  H01L2924/00

    Abstract: Methods for bonding semiconductor wafers requiring the transfer of electrical and optical signals between the bonded wafers and across the bonding interface by interfusing optical interconnects on one wafer with optical interconnects on a second wafer, interfusing electrical interconnects on one wafer with electrical interconnects on the second wafer, and interfusing a dielectric intermediary bonding layer on one wafer with the dielectric intermediary bonding layer on the second wafer to bond the wafers together with electrical interconnections and optical interconnections between the wafers. The methods are also applicable to the bonding of semiconductor wafers to provide a high density of electrical interconnects between wafers.

    Abstract translation: 通过将一个晶片上的光学互连件与第二晶片上的光学互连件连接在一起，将在一个晶片上的电互连与第二晶片上的电互连相连接的半导体晶片的接合需要在接合的晶片之间和结合界面之间传送电和光信号的方法 并且将一个晶片上的电介质中间键合层与第二晶片上的电介质中间键合层进行接合，以将晶片与晶片之间的电互连和光学互连结合在一起。 这些方法也适用于半导体晶片的结合，以在晶片之间提供高密度的电互连。

    Spatio-temporal directional light modulator
    75.
    发明授权
    Spatio-temporal directional light modulator 有权
    时空定向光调制器

    公开(公告)号：US09195053B2

    公开(公告)日：2015-11-24

    申请号：US14486758

    申请日：2014-09-15

    Applicant: Ostendo Technologies, Inc.

    Inventor： Hussein S. El-Ghoroury ,  Zahir Y. Alpaslan ,  Jingbo Cai ,  Marty Maiers ,  Philip Warner ,  Dale A. McNeill

    IPC: G02B26/08 ,  G02B27/10 ,  G02B26/10 ,  H04N13/04

    CPC classification number: G02B26/08 ,  G02B26/101 ,  H04N13/307 ,  H04N13/32 ,  H04N13/356 ,  Y10T29/4978 ,  Y10T29/49826

    Abstract: A spatio-temporal directional light modulator is introduced. This directional light modulator can be used to create 3D displays, ultra-high resolution 2D displays or 2D/3D switchable displays with extended viewing angle. The spatio-temporal aspects of this novel light modulator allow it to modulate the intensity, color and direction of the light it emits within an wide viewing angle. The inherently fast modulation and wide angular coverage capabilities of this directional light modulator increase the achievable viewing angle, and directional resolution making the 3D images created by the display be more realistic or alternatively the 2D images created by the display having ultra high resolution.

    Abstract translation: 引入了时空定向光调制器。 该定向光调制器可用于创建具有扩展视角的3D显示器，超高分辨率2D显示器或2D / 3D可切换显示器。 这种新型光调制器的空间 - 时间方面允许它调制在宽视角范围内发射的光的强度，颜色和方向。 该定向光调制器的固有的快速调制和宽的角度覆盖能力增加了可实现的视角，并且使得由显示器创建的3D图像的方向分辨率更加逼真，或者替代地，由具有超高分辨率的显示器创建的2D图像。

    Semiconductor Wafer Bonding Incorporating Electrical and Optical Interconnects
    76.
    发明申请
    Semiconductor Wafer Bonding Incorporating Electrical and Optical Interconnects 有权
    半导体晶圆接合结合电气和光学互连

    公开(公告)号：US20150072450A1

    公开(公告)日：2015-03-12

    申请号：US14537627

    申请日：2014-11-10

    Applicant: Ostendo Technologies, Inc.

    Inventor： Hussein S. El-Ghoroury ,  Chih-Li Chuang ,  Kameshwar Yadavalli ,  Qian Fan

    IPC: H01L33/00

    CPC classification number: H01L33/0079 ,  H01L21/187 ,  H01L27/14618 ,  H01L27/14683 ,  H01L33/0066 ,  H01L33/0095 ,  H01L2924/0002 ,  H01L2924/351 ,  H01L2933/0066 ,  H01L2924/00

    Abstract: Methods for bonding semiconductor wafers requiring the transfer of electrical and optical signals between the bonded wafers and across the bonding interface. The methods for bonding of semiconductor wafers incorporate the formation of both electrical and optical interconnect vias within the wafer bonding interface to transfer electrical and optical signals between the bonded wafers. The electrical vias are formed across the bonding surface using multiplicity of metal posts each comprised of multiple layers of metal that are interfused across the bonding surface. The optical vias are formed across the bonding surface using multiplicity of optical waveguides each comprised of a dielectric material that interfuses across the bonding interface and having an index of refraction that is higher than the index of refraction of the dielectric intermediary bonding layer between the bonded wafers. The electrical and optical vias are interspersed across the bonding surface between the bonded wafers to enable uniform transfer of both electrical and optical signals between the bonded wafers.

    Abstract translation: 用于接合半导体晶片的方法，其需要在接合的晶片之间并且跨接合界面传输电和光信号。 用于接合半导体晶片的方法包括在晶片接合界面内形成电和光互连通孔，以在接合的晶片之间转移电和光信号。 通过结合表面形成电通孔，使用多个金属柱，每个金属柱由跨接合表面的多层金属组成。 通过使用多个光波导形成光通孔，每个光波导由电介质材料构成，该电介质材料在接合界面之间相互连接并且具有高于接合晶片之间的电介质中间结合层的折射率的折射率 。 电通孔和光通孔穿过接合的晶片之间的结合表面，以使得能够在结合的晶片之间均匀地传递电信号和光信号。

    Enhanced Performance Active Pixel Array and Epitaxial Growth Method for Achieving the Same
    77.
    发明申请
    Enhanced Performance Active Pixel Array and Epitaxial Growth Method for Achieving the Same 有权
    增强性能主动像素阵列和外延增长方法实现相同

    公开(公告)号：US20140349427A1

    公开(公告)日：2014-11-27

    申请号：US14452346

    申请日：2014-08-05

    Applicant: Ostendo Technologies, Inc.

    Inventor： Hussein S. El-Ghoroury ,  Benjamin A. Haskell

    IPC: H01L33/00 ,  H01S5/026 ,  H01S5/30

    CPC classification number: H01L33/0062 ,  H01L21/0242 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L27/156 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/16 ,  H01L2933/0025 ,  H01S5/026 ,  H01S5/3013

    Abstract: Methods are described to utilize relatively low cost substrates and processing methods to achieve enhanced emissive imager pixel performance via selective epitaxial growth. An emissive imaging array is coupled with one or more patterned compound semiconductor light emitting structures grown on a second patterned and selectively grown compound semiconductor template article. The proper design and execution of the patterning and epitaxial growth steps, coupled with alignment of the epitaxial structures with the imaging array, results in enhanced performance of the emissive imager. The increased luminous flux achieved enables use of such images for high brightness display and illumination applications.

    Abstract translation: 描述了利用相对低成本的衬底和处理方法来实现通过选择性外延生长来实现增强的发射成像器像素性能的方法。 发射成像阵列与在第二图案化和选择性生长的化合物半导体模板制品上生长的一个或多个图案化的化合物半导体发光结构耦合。 图案化和外延生长步骤的适当设计和执行以及外延结构与成像阵列的对准，导致发射成像器的性能提高。 所获得的增加的光通量使得能够使用这种图像用于高亮度显示和照明应用。

    3D Light Field Displays and Methods with Improved Viewing Angle, Depth and Resolution
    78.
    发明申请
    3D Light Field Displays and Methods with Improved Viewing Angle, Depth and Resolution 审中-公开
    3D光场显示和改进的视角，深度和分辨率的方法

    公开(公告)号：US20140347361A1

    公开(公告)日：2014-11-27

    申请号：US14452329

    申请日：2014-08-05

    Applicant: Ostendo Technologies, Inc.

    Inventor： Zahir Y. Alpaslan ,  Hussein S. El-Ghoroury

    IPC: G06T15/50

    CPC classification number: G06T15/50 ,  H04N13/307

    Abstract: 3D light field display methods and apparatus with improved viewing angle, depth and resolution are introduced. The methods can be used to create a high quality 3D light field display of any size from smaller than a postage stamp to larger than a three story building.

    Abstract translation: 介绍了具有改善的视角，深度和分辨率的3D光场显示方法和设备。 该方法可用于创建从小于邮票到大于三层建筑的任何尺寸的高质量3D光场展示。

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