Abstract:
A vehicle auxiliary power supply that is mounted on a railway vehicle, includes a three-phase inverter circuit that converts DC power or AC power input from an overhead line to desired AC power to supply the AC power to a load, and is connected in parallel with a VVVF inverter device that drives a propulsion motor, wherein a blocking diode that prevents backflow from a side of the three-phase inverter circuit to a side of the overhead line is provided between the overhead line and the three-phase inverter circuit, and a SiC Schottky barrier diode is applied to the blocking diode.
Abstract:
An image processing apparatus for decoding an image coded in coding processes including (i) prediction on at least one prediction unit (PU) and (ii) frequency transform on transform units (TUs) included in a region including the at least one PU includes a processing unit configured to perform image processing for a predictive image of the at least one PU, depending on a transform order predetermined for the TUs.
Abstract:
To provide a method for separating metallic CNT and semiconducting CNT by treating a CNT-containing gel or a CNT dispersion as combined with a gel, according to a physical separation means to thereby make semiconducting CNT exist in gel and metallic CNT exist in solution, in which the semiconducting CNT adsorbed by gel are collected in a more simplified manner not dissolving the gel.A CNT-containing gel or a CNT dispersion combined with a gel is treated according to a physical separation means of a centrifugal method, a freezing squeezing method, a diffusion method or a permeation method, to thereby make semiconducting CNT exist in gel and metallic CNT exist in solution so that the metallic CNT and the semiconducting CNT are separated from each other, and further, a suitable eluent is made to react on the gel that adsorbs semiconducting CNT to elute the semiconducting CNT from the gel.
Abstract:
A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.
Abstract:
A pair of elements that includes a Si-MOSFET and a Si-FWD connected in inverse parallel and operates as a positive side arm of an electric-power conversion apparatus and a pair of elements that operates as a negative side arm of the electric-power conversion apparatus are provided, where the first and second pairs of elements are accommodated in one power semiconductor module to compose a 2-in-1 module, and terminals are included which enables series connection of the pairs of elements.
Abstract:
Provided is a sensor node including: a sensor for measuring biological information; a CPU for acquiring data by driving the sensor; a wireless communication unit for transmitting the data acquired by the CPU; a battery for supplying the control unit, the wireless communication unit, and the sensor with electric power; a RAM for storing the data; a compression unit for compressing the data stored in the RAM when the wireless communication unit cannot carry out the transmission; and a flash memory for storing the compressed data, thereby storing as much sensing data as possible on the sensor node, which is limited in resources, and preventing loss of the sensing data.
Abstract:
A wired circuit board includes a first wired circuit board and a second wired circuit board disposed to be opposed to the first wired circuit board in the same plane. A first opposed surface of the first wired circuit board facing the second wired circuit board and a second opposed surface of the second wired circuit board facing the first wired circuit board include at least two types of interfitting surfaces extending in different directions so as to mutually interfit the first opposed surface with the second opposed surface.
Abstract:
A power semiconductor module applied to a power converting apparatus for a railway car includes an element pair formed by connecting an IGBT and an SiC-FWD in anti-parallel to each other and an element pair formed by connecting an Si-IGBT and an SiC-FWD in anti-parallel to each other. The element pair and the element pair are housed in one module and configured as a 2-in-1 module in a manner that the first element pair operates as a positive side arm of the power converting apparatus and the second element pair operates as a negative side arm of the power converting apparatus. The element pairs are formed such that a ratio of an occupied area of SiC-FWD chips to an occupied area of IGBT chips in the element pairs is equal to or higher than 15% and lower than 45%.
Abstract:
An image display system including a synthesized image generation section that generates a synthesized image representing a vehicle and circumstances around the vehicle viewed from a virtual viewpoint based on captured images obtained by cameras disposed on the vehicle, a navigation device that displays the synthesized image and the captured images on a display screen, an obstacle detection section that detects an obstacle, and an indication addition section that, when the obstacle is detected, adds an alarm indication to call attention to at least one of an area of the display screen except the synthesized image, and a surrounding area of the synthesized image is provided.
Abstract:
A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.