公开(公告)号：US08648369B2

公开(公告)日：2014-02-11

申请号：US13073794

申请日：2011-03-28

Applicant: Won Cheol Seo ,  Joon Hee Lee ,  Jong Kyun You ,  Chang Youn Kim ,  Jin Cheul Shin ,  Hwa Mok Kim ,  Jang Woo Lee ,  Yeo Jin Yoon ,  Jong Kyu Kim

Inventor： Won Cheol Seo ,  Joon Hee Lee ,  Jong Kyun You ,  Chang Youn Kim ,  Jin Cheul Shin ,  Hwa Mok Kim ,  Jang Woo Lee ,  Yeo Jin Yoon ,  Jong Kyu Kim

IPC: H01L33/60

CPC classification number: H01L33/60 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/32 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00

Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.

Abstract translation: 公开了一种发光器件及其制造方法。 发光器件包括衬底。 多个发光单元设置在基板的顶部上以彼此间隔开。 每个发光单元包括第一上半导体层，有源层和第二下半导体层。 反射金属层位于基板和发光单元之间。 防止反射金属层暴露于外部。

公开(公告)号：US08541806B2

公开(公告)日：2013-09-24

申请号：US12963921

申请日：2010-12-09

Applicant: Kyoung Wan Kim ,  Jeong Hee Yang ,  Yeo Jin Yoon

Inventor： Kyoung Wan Kim ,  Jeong Hee Yang ,  Yeo Jin Yoon

IPC: H01L33/00

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/382 ,  H01L33/44

Abstract: The present invention relates to a light emitting diode including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the first conductive type semiconductor layer, and an insulation layer disposed between the first conductive type semiconductor layer and the second electrode pad, the insulation layer insulating the second electrode pad from the first conductive type semiconductor layer. At least one upper extension may be electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

Abstract translation: 本发明涉及一种发光二极管，包括基板，布置在基板上的第一导电型半导体层，布置在第一导电型半导体层上的第二导电型半导体层，设置在第一导电类型半导体层之间的有源层 和第二导电型半导体层，电连接到第一导电类型半导体层的第一电极焊盘，布置在第一导电类型半导体层上的第二电极焊盘以及设置在第一导电类型半导体层和第二导电类型半导体层之间的绝缘层 所述绝缘层将所述第二电极焊盘与所述第一导电型半导体层绝缘。 至少一个上延伸部可以电连接到第二电极焊盘，所述至少一个上延伸部电连接到第二导电类型半导体层。

公开(公告)号：US20130217686A1

公开(公告)日：2013-08-22

申请号：US13876803

申请日：2011-09-28

Applicant: Sung Jin Bae ,  Han Ju Yi ,  Sun Gwan Hwang ,  Mo Ses Jeong ,  Yeo Jin Yoon ,  Sang Mi Chae ,  Joo Young Park ,  Eun Ju Ryu

Inventor： Sung Jin Bae ,  Han Ju Yi ,  Sun Gwan Hwang ,  Mo Ses Jeong ,  Yeo Jin Yoon ,  Sang Mi Chae ,  Joo Young Park ,  Eun Ju Ryu

IPC: C07D401/12 ,  C07D213/55 ,  C07D295/14 ,  C07D207/06

CPC classification number: C07D401/12 ,  C07D207/06 ,  C07D213/30 ,  C07D213/40 ,  C07D213/53 ,  C07D213/55 ,  C07D213/61 ,  C07D213/75 ,  C07D213/79 ,  C07D213/80 ,  C07D213/89 ,  C07D295/14 ,  C07D295/205

Abstract: A novel methylcyclohexane derivative, and a pharmaceutical composition including the same that is effective for the prevention or treatment of pain.

Abstract translation: 一种新的甲基环己烷衍生物，以及包含其的药物组合物，其有效预防或治疗疼痛。

公开(公告)号：US08481352B2

公开(公告)日：2013-07-09

申请号：US13089544

申请日：2011-04-19

Applicant: Jun Hee Lee ,  Jong Kyu Kim ,  Yeo Jin Yoon

Inventor： Jun Hee Lee ,  Jong Kyu Kim ,  Yeo Jin Yoon

IPC: H01L21/304 ,  H01L27/15 ,  H01L33/00

CPC classification number: H01L33/0095 ,  H01L33/20

Abstract: The present invention provides a method of fabricating a light emitting diode chip having an active layer between an N type semiconductor layer and a P type semiconductor layer. The method comprises the steps of preparing a substrate; laminating the semiconductor layers on the substrate, the semiconductor layers having the active layer between the N type semiconductor layer and the P type semiconductor layer; and forming grooves on the semiconductor layers laminated on the substrate until the substrate is exposed, whereby inclined sidewalls are formed by the grooves in the semiconductor layers divided into a plurality of chips. According to embodiments of the present invention, a sidewall of a semiconductor layer formed on a substrate of a light emitting diode chip is inclined with respect to the substrate, whereby its directional angle is widened as compared with a light emitting diode chip without such inclination. As the directional angle of the light emitting diode chip is wider, when a white light emitting device is fabricated using the light emitting diode chip and a phosphor, light uniformity can be adjusted even though the phosphor is not concentrated at the center of the device. Thus, the overall light emitting efficiency can be enhanced by reducing a light blocking phenomenon caused by the increased amount of the phosphor distributed at the center portion.

Abstract translation: 本发明提供一种制造在N型半导体层和P型半导体层之间具有有源层的发光二极管芯片的方法。 该方法包括以下步骤：制备基底; 在所述基板上层叠所述半导体层，所述半导体层具有在所述N型半导体层和所述P型半导体层之间的有源层; 以及在层叠在基板上的半导体层上形成凹槽，直到基板被暴露，由此通过划分成多个芯片的半导体层中的凹槽形成倾斜的侧壁。 根据本发明的实施例，形成在发光二极管芯片的基板上的半导体层的侧壁相对于基板倾斜，由此与没有倾斜的发光二极管芯片相比，其方向角度变宽。 随着发光二极管芯片的方位角变宽，当使用发光二极管芯片和荧光体制造白色发光器件时，即使荧光体不集中在器件的中心，也可以调整光均匀性。 因此，通过减少由分散在中心部分的荧光体的量增加引起的遮光现象，可以提高整体发光效率。

公开(公告)号：US08436369B2

公开(公告)日：2013-05-07

申请号：US13617810

申请日：2012-09-14

Applicant: Won Cheol Seo ,  Dae Sung Kal ,  Kyung Hee Ye ,  Kyoung Wan Kim ,  Yeo Jin Yoon

Inventor： Won Cheol Seo ,  Dae Sung Kal ,  Kyung Hee Ye ,  Kyoung Wan Kim ,  Yeo Jin Yoon

IPC: H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC classification number: H01L33/387 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

Abstract: Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

公开(公告)号：US08395166B2

公开(公告)日：2013-03-12

申请号：US12811047

申请日：2008-12-24

Applicant: Won Cheol Seo ,  Chang Youn Kim ,  Yeo Jin Yoon

Inventor： Won Cheol Seo ,  Chang Youn Kim ,  Yeo Jin Yoon

IPC: H01L29/205 ,  H01L33/00

CPC classification number: H01L33/0079 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/46 ,  H01L33/641 ,  H01L2224/49107

Abstract: Disclosed herein is a light emitting diode. The light emitting diode includes a support substrate, semiconductor layers formed on the support substrate, and a metal pattern located between the support substrate and the lower semiconductor layer. The semiconductor layers include an upper semiconductor layer of a first conductive type, an active layer, and a lower semiconductor layer of a second conductive type. The semiconductor layers are grown on a sacrificial substrate and the support substrate is homogeneous with the sacrificial substrate.

Abstract translation: 这里公开了一种发光二极管。 发光二极管包括支撑衬底，形成在支撑衬底上的半导体层以及位于支撑衬底和下半导体层之间的金属图案。 半导体层包括第一导电类型的上半导体层，有源层和第二导电类型的下半导体层。 半导体层在牺牲衬底上生长，并且支撑衬底与牺牲衬底是均匀的。

公开(公告)号：US08299476B2

公开(公告)日：2012-10-30

申请号：US12442796

申请日：2007-09-14

Applicant: Jun Hee Lee ,  Jong Kyu Kim ,  Yeo Jin Yoon

Inventor： Jun Hee Lee ,  Jong Kyu Kim ,  Yeo Jin Yoon

IPC: H01L29/18

CPC classification number: H01L27/15 ,  H01L27/156 ,  H01L33/62 ,  H01L2224/48137 ,  H01L2224/73265 ,  H01L2924/12041

Abstract: There is provided a light emitting diode operating under AC power comprising a substrate; a buffer layer formed on the substrate; and a plurality of light emitting cells formed on the buffer layer to have different sizes and to be electrically isolated from one another, the plurality of light emitting cells being connected in series through metal wires.According to the present invention, light emitting cells formed in an LED have different sizes, and thus have different turn-on voltages when light is emitted under AC power, so that times when the respective light emitting cells start emitting light are different to thereby effectively reduce a flicker phenomenon.

公开(公告)号：US08274089B2

公开(公告)日：2012-09-25

申请号：US12626556

申请日：2009-11-25

Applicant: Jun Hee Lee ,  Jong Kyu Kim ,  Yeo Jin Yoon

Inventor： Jun Hee Lee ,  Jong Kyu Kim ,  Yeo Jin Yoon

IPC: H01L29/18 ,  H01L33/00

CPC classification number: H01L27/15 ,  H01L27/156 ,  H01L33/62 ,  H01L2224/48137 ,  H01L2224/73265 ,  H01L2924/12041

Abstract: There is provided a light emitting diode operating under AC power comprising a substrate; a buffer layer formed on the substrate; and a plurality of light emitting cells formed on the buffer layer to have different sizes and to be electrically isolated from one another, the plurality of light emitting cells being connected in series through metal wires.According to the present invention, light emitting cells formed in an LED have different sizes, and thus have different turn-on voltages when light is emitted under AC power, so that times when the respective light emitting cells start emitting light are different to thereby effectively reduce a flicker phenomenon.

Abstract translation: 提供了在AC电源下工作的发光二极管，其包括基板; 形成在所述基板上的缓冲层; 以及形成在所述缓冲层上以具有不同尺寸并且彼此电隔离的多个发光单元，所述多个发光单元通过金属线串联连接。 根据本发明，形成在LED中的发光单元具有不同的尺寸，因此当在AC功率下发光时具有不同的导通电压，从而当各个发光单元开始发光的时间不同，从而有效地 减少闪烁现象。

公开(公告)号：US08188489B2

公开(公告)日：2012-05-29

申请号：US12607506

申请日：2009-10-28

Applicant: Chung Hoon Lee ,  Dae Won Kim ,  Dae Sung Kal ,  Won Cheol Seo ,  Kyung Hee Ye ,  Yeo Jin Yoon

Inventor： Chung Hoon Lee ,  Dae Won Kim ,  Dae Sung Kal ,  Won Cheol Seo ,  Kyung Hee Ye ,  Yeo Jin Yoon

IPC: H01L33/00

CPC classification number: H01L27/153 ,  H01L33/20 ,  H01L33/62 ,  H01L2224/48 ,  H05B33/0821

Abstract: The present invention discloses a light emitting diode (LED) including a plurality of light emitting cells arranged on a substrate. The LED includes half-wave light emitting units each including at least one light emitting cell, each half-wave light emitting unit including first and second terminals respectively arranged at both ends thereof; and full-wave light emitting units each including at least one light emitting cell, each full-wave light emitting units including third and fourth terminals respectively formed at both ends thereof. The third terminal of each full-wave light emitting unit is electrically connected to the second terminals of two half-wave light emitting units, and the fourth terminal of each full-wave light emitting unit is electrically connected to the first terminals of other two half-wave light emitting units. Also, a first half-wave light emitting unit is connected in series between the third terminal of a first full-wave light emitting unit and the fourth terminal of a second full-wave light emitting units, and a second half-wave light emitting units is connected in series between the fourth terminal of the first full-wave light emitting unit and the third terminal of the second full-wave light emitting unit.

公开(公告)号：US20120049223A1

公开(公告)日：2012-03-01

申请号：US13209765

申请日：2011-08-15

Applicant: Jeong Hee YANG ,  Kyoung Wan KIM ,  Yeo Jin YOON ,  Ye Seul KIM ,  Sang Hyun OH ,  Duk Il SUH ,  Keum Ju LEE ,  Jin Woong LEE ,  Da Yeon JEONG

Inventor： Jeong Hee YANG ,  Kyoung Wan KIM ,  Yeo Jin YOON ,  Ye Seul KIM ,  Sang Hyun OH ,  Duk Il SUH ,  Keum Ju LEE ,  Jin Woong LEE ,  Da Yeon JEONG

IPC: H01L33/58 ,  H01L33/42

CPC classification number: H01L33/385 ,  H01L33/20 ,  H01L33/38 ,  H01L33/42 ,  H01L2933/0091

Abstract: Exemplary embodiments of the present invention relate to light emitting diodes. A light emitting diode according to an exemplary embodiment of the present invention includes a substrate having a first side edge and a second side edge, and a light emitting structure arranged on the substrate. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A transparent electrode layer including a concave portion and a convex portion is arranged on the second conductivity-type semiconductor layer. A first electrode pad contacts an upper surface of the first conductivity-type semiconductor layer and is located near a center of the first side edge. Two second electrode pads are located near opposite distal ends of the second side edge to supply electric current to the second conductivity-type semiconductor layer. A first pad extension extends from the first electrode pad and a second pad extension extends from each of the two second electrode pads.

Abstract translation: 本发明的示例性实施例涉及发光二极管。 根据本发明的示例性实施例的发光二极管包括具有第一侧边缘和第二侧边缘的基板和布置在基板上的发光结构。 发光结构包括第一导电型半导体层，有源层和第二导电型半导体层。 在第二导电型半导体层上配置有包含凹部和凸部的透明电极层。 第一电极焊盘接触第一导电类型半导体层的上表面并且位于第一侧边缘的中心附近。 两个第二电极焊盘位于第二侧边缘的相对的远端附近，以向第二导电类型半导体层提供电流。 第一焊盘延伸部从第一电极焊盘延伸，并且第二焊盘延伸部从两个第二电极焊盘中的每一个延伸。